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A dual chamber molecular beam epitaxy (MBE) system was rebuilt for the growth of 6.1 Angstrom II-VI and III-V compound semiconductor materials that are to be used in novel optoelectronic

A dual chamber molecular beam epitaxy (MBE) system was rebuilt for the growth of 6.1 Angstrom II-VI and III-V compound semiconductor materials that are to be used in novel optoelectronic devices that take advantage of the nearly continuous bandgap availability between 0 eV and 3.4 eV. These devices include multijunction solar cells and multicolor detectors. The MBE system upgrade involved the conversion of a former III-V chamber for II-VI growth. This required intensive cleaning of the chamber and components to prevent contamination.

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    Date Created
    • 2012
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  • Text
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    Note
    • Partial requirement for: M.S., Arizona State University, 2012
      Note type
      thesis
    • Includes bibliographical references (pages 72-76)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by W. Hank G. Dettlaff

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