The non-quasi-static (NQS) description of device behavior is useful in fast switching and high frequency circuit applications. Hence, it is necessary to develop a fast and accurate compact NQS model for both large-signal and small-signal simulations. A new relaxation-time-approximation based NQS MOSFET model, consistent between transient and small-signal simulations, has been developed for surface-potential-based MOSFET compact models.
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- Partial requirement for: Ph.D., Arizona State University, 2012Note typethesis
- Includes bibliographical references (p. 103-116)Note typebibliography
- Field of study: Electrical engineering