Group III-nitride semiconductors have attracted much attention for applications on high brightness light-emitting diodes (LEDs) and laser diodes (LDs) operating in the visible and ultra-violet spectral range using indium gallium nitride in the active layer. However, the device efficiency in the green to red range is limited by quantum-confined Stark effects resulting from the lattice mismatch between GaN and InGaN.
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- Partial requirement for: Ph.D., Arizona State University, 2011Note typethesis
- Includes bibliographical referencesNote typebibliography
- Field of study: Physics