Description

Group III-nitride semiconductors have attracted much attention for applications on high brightness light-emitting diodes (LEDs) and laser diodes (LDs) operating in the visible and ultra-violet spectral range using indium gallium

Group III-nitride semiconductors have attracted much attention for applications on high brightness light-emitting diodes (LEDs) and laser diodes (LDs) operating in the visible and ultra-violet spectral range using indium gallium nitride in the active layer. However, the device efficiency in the green to red range is limited by quantum-confined Stark effects resulting from the lattice mismatch between GaN and InGaN.

Reuse Permissions
  • 6.34 MB application/pdf

    Download count: 0

    Details

    Contributors
    Date Created
    • 2011
    Resource Type
  • Text
  • Collections this item is in
    Note
    • Partial requirement for: Ph.D., Arizona State University, 2011
      Note type
      thesis
    • Includes bibliographical references
      Note type
      bibliography
    • Field of study: Physics

    Citation and reuse

    Statement of Responsibility

    by Yu Huang

    Machine-readable links