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A low temperature amorphous oxide thin film transistor (TFT) backplane technology for flexible organic light emitting diode (OLED) displays has been developed to create 4.1-in. diagonal backplanes. The critical steps

A low temperature amorphous oxide thin film transistor (TFT) backplane technology for flexible organic light emitting diode (OLED) displays has been developed to create 4.1-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication of white organic light emitting diode (OLED) displays.

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    Date Created
    • 2011
    Resource Type
  • Text
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    • Partial requirement for: M.S., Arizona State University, 2011
      Note type
      thesis
    • Includes bibliographical references
      Note type
      bibliography
    • Field of study: Chemical engineering

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    by Michael Marrs

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