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The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the

The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications. Modeling the deleterious impact of ionizing radiation on ICs fabricated in advanced CMOS technologies requires understanding and analyzing the basic mechanisms that result in buildup of radiation-induced defects in specific sensitive regions.

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    Date Created
    • 2011
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  • Text
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    • Partial requirement for: Ph.D., Arizona State University, 2011
      Note type
      thesis
    • Includes bibliographical references (p
    • Field of study: Electrical engineering

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    by Ivan Sanchez Esqueda

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