To extend the lifetime of complementary metal-oxide-semiconductors (CMOS), emerging process techniques are being proposed to conquer the manufacturing difficulties. New structures and materials are proposed with superior electrical properties to traditional CMOS, such as strain technology and feedback field-effect transistor (FB-FET). To continue the design success and make an impact on leading products, advanced circuit design exploration must begin concurrently with early silicon development.
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- Partial requirement for: Ph.D., Arizona State University, 2011Note typethesis
- Includes bibliographical references (p. 92-100)Note typebibliography
- Field of study: Electrical engineering