Programmable Metallization Cell (PMC) technology has been shown to possess the necessary qualities for it to be considered as a leading contender for the next generation memory. These qualities include high speed and endurance, extreme scalability, ease of fabrication, ultra low power operation, and perhaps most importantly ease of integration with the CMOS back end of line (BEOL) process flow. One area where detailed study is lacking is the reliability of PMC devices.
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- Partial requirement for: Ph.D., Arizona State University, 2011Note typethesis
- Includes bibliographical references (p. 117-123)Note typebibliography
- Field of study: Electrical engineering