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Silicon carbide (SiC), long touted as a material that can satisfy the specific property requirements for high temperature and high power applications, was studied quantitatively using various techniques. The electronic

Silicon carbide (SiC), long touted as a material that can satisfy the specific property requirements for high temperature and high power applications, was studied quantitatively using various techniques. The electronic band structure of 4H SiC is examined in the first half of this dissertation. A brief introduction to band structure calculations, with particular emphasis on the empirical pseudopotential method, is given as a foundation for the subsequent work.

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    Date Created
    • 2010
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  • Text
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    • Partial requirement for: Ph.D., Arizona State University, 2010
      Note type
      thesis
    • Includes bibliographical references (p. 71-75)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Garrick Ng

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