Silicon carbide (SiC), long touted as a material that can satisfy the specific property requirements for high temperature and high power applications, was studied quantitatively using various techniques. The electronic band structure of 4H SiC is examined in the first half of this dissertation. A brief introduction to band structure calculations, with particular emphasis on the empirical pseudopotential method, is given as a foundation for the subsequent work.
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- Partial requirement for: Ph.D., Arizona State University, 2010Note typethesis
- Includes bibliographical references (p. 71-75)Note typebibliography
- Field of study: Electrical engineering