Description

Silicon Carbide (SiC) junction field effect transistors (JFETs) are ideal for switching high current, high voltage loads in high temperature environments. These devices require external drive circuits to generate pulse

Silicon Carbide (SiC) junction field effect transistors (JFETs) are ideal for switching high current, high voltage loads in high temperature environments. These devices require external drive circuits to generate pulse width modulated (PWM) signals switching from 0V to approximately 10V. Advanced CMOS microcontrollers are ideal for generating the PWM signals but are limited in output voltage due to their low breakdown voltage within the CMOS drive circuits. As a result, an intermediate buffer stage is required between the CMOS circuitry and the JFET.

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    Date Created
    • 2010
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  • Text
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    Note
    • Partial requirement for: M.S., Arizona State University, 2010
      Note type
      thesis
    • Includes bibliographical references (p. 57-58)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Nicholas Summers

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