Full metadata
Title
Voltage Sense Amplifier (VSA) Design For RRAM Cross-Point Memory Array Structures
Description
RRAM is an emerging technology that looks to replace FLASH NOR and possibly NAND memory. It is attractive because it uses an adjustable resistance and does not rely on charge; in the sub-10nm feature size circuitry this is critical. However, RRAM cross-point arrays suffer tremendously from leakage currents that prevent proper readings in larger array sizes. In this research an exponential IV selector was added to each cell to minimize this current. Using this technique the largest array-size supportable was determined to be 512x512 cells using the conventional voltage sense amplifier by HSPICE simulations. However, with the increase in array size, the sensing latency also remarkably increases due to more sneak path currents, approaching 873 ns for the 512x512 array.
Date Created
2016-05
Contributors
- Madler, Ryan Anton (Author)
- Yu, Shimeng (Thesis director)
- Cao, Yu (Committee member)
- Electrical Engineering Program (Contributor)
- Barrett, The Honors College (Contributor)
Topical Subject
Resource Type
Extent
15 pages
Language
Copyright Statement
In Copyright
Primary Member of
Series
Academic Year 2015-2016
Handle
https://hdl.handle.net/2286/R.I.37143
Level of coding
minimal
Cataloging Standards
System Created
- 2017-10-30 02:50:57
System Modified
- 2021-08-11 04:09:57
- 2 years 8 months ago
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