ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
Displaying 1 - 10 of 95
Description
Process variations have become increasingly important for scaled technologies starting at 45nm. The increased variations are primarily due to random dopant fluctuations, line-edge roughness and oxide thickness fluctuation. These variations greatly impact all aspects of circuit performance and pose a grand challenge to future robust IC design. To improve robustness, efficient methodology is required that considers effect of variations in the design flow. Analyzing timing variability of complex circuits with HSPICE simulations is very time consuming. This thesis proposes an analytical model to predict variability in CMOS circuits that is quick and accurate. There are several analytical models to estimate nominal delay performance but very little work has been done to accurately model delay variability. The proposed model is comprehensive and estimates nominal delay and variability as a function of transistor width, load capacitance and transition time. First, models are developed for library gates and the accuracy of the models is verified with HSPICE simulations for 45nm and 32nm technology nodes. The difference between predicted and simulated σ/μ for the library gates is less than 1%. Next, the accuracy of the model for nominal delay is verified for larger circuits including ISCAS'85 benchmark circuits. The model predicted results are within 4% error of HSPICE simulated results and take a small fraction of the time, for 45nm technology. Delay variability is analyzed for various paths and it is observed that non-critical paths can become critical because of Vth variation. Variability on shortest paths show that rate of hold violations increase enormously with increasing Vth variation.
ContributorsGummalla, Samatha (Author) / Chakrabarti, Chaitali (Thesis advisor) / Cao, Yu (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2011
Description
One of the challenges in future semiconductor device design is excessive rise of power dissipation and device temperatures. With the introduction of new geometrically confined device structures like SOI, FinFET, nanowires and continuous incorporation of new materials with poor thermal conductivities in the device active region, the device thermal problem is expected to become more challenging in coming years. This work examines the degradation in the ON-current due to self-heating effects in 10 nm channel length silicon nanowire transistors. As part of this dissertation, a 3D electrothermal device simulator is developed that self-consistently solves electron Boltzmann transport equation with 3D energy balance equations for both the acoustic and the optical phonons. This device simulator predicts temperature variations and other physical and electrical parameters across the device for different bias and boundary conditions. The simulation results show insignificant current degradation for nanowire self-heating because of pronounced velocity overshoot effect. In addition, this work explores the role of various placement of the source and drain contacts on the magnitude of self-heating effect in nanowire transistors. This work also investigates the simultaneous influence of self-heating and random charge effects on the magnitude of the ON current for both positively and negatively charged single charges. This research suggests that the self-heating effects affect the ON-current in two ways: (1) by lowering the barrier at the source end of the channel, thus allowing more carriers to go through, and (2) via the screening effect of the Coulomb potential. To examine the effect of temperature dependent thermal conductivity of thin silicon films in nanowire transistors, Selberherr's thermal conductivity model is used in the device simulator. The simulations results show larger current degradation because of self-heating due to decreased thermal conductivity . Crystallographic direction dependent thermal conductivity is also included in the device simulations. Larger degradation is observed in the current along the [100] direction when compared to the [110] direction which is in agreement with the values for the thermal conductivity tensor provided by Zlatan Aksamija.
ContributorsHossain, Arif (Author) / Vasileska, Dragica (Thesis advisor) / Ahmed, Shaikh (Committee member) / Bakkaloglu, Bertan (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2011
Description
A dual-channel directional digital hearing aid (DHA) front-end using a fully differential difference amplifier (FDDA) based Microphone interface circuit (MIC) for a capacitive Micro Electro Mechanical Systems (MEMS) microphones and an adaptive-power analog font end (AFE) is presented. The Microphone interface circuit based on FDDA converts the capacitance variations into voltage signal, achieves a noise of 32 dB SPL (sound pressure level) and an SNR of 72 dB, additionally it also performs single to differential conversion allowing for fully differential analog signal chain. The analog front-end consists of 40dB VGA and a power scalable continuous time sigma delta ADC, with 68dB SNR dissipating 67u¬W from a 1.2V supply. The ADC implements a self calibrating feedback DAC, for calibrating the 2nd order non-linearity. The VGA and power scalable ADC is fabricated on 0.25 um CMOS TSMC process. The dual channels of the DHA are precisely matched and achieve about 0.5dB gain mismatch, resulting in greater than 5dB directivity index. This will enable a highly integrated and low power DHA
ContributorsNaqvi, Syed Roomi (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Chae, Junseok (Committee member) / Barnby, Hugh (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2011
Description
Residue number systems have gained significant importance in the field of high-speed digital signal processing due to their carry-free nature and speed-up provided by parallelism. The critical aspect in the application of RNS is the selection of the moduli set and the design of the conversion units. There have been several RNS moduli sets proposed for the implementation of digital filters. However, some are unbalanced and some do not provide the required dynamic range. This thesis addresses the drawbacks of existing RNS moduli sets and proposes a new moduli set for efficient implementation of FIR filters. An efficient VLSI implementation model has been derived for the design of a reverse converter from RNS to the conventional two's complement representation. This model facilitates the realization of a reverse converter for better performance with less hardware complexity when compared with the reverse converter designs of the existing balanced 4-moduli sets. Experimental results comparing multiply and accumulate units using RNS that are implemented using the proposed four-moduli set with the state-of-the-art balanced four-moduli sets, show large improvements in area (46%) and power (43%) reduction for various dynamic ranges. RNS FIR filters using the proposed moduli-set and existing balanced 4-moduli set are implemented in RTL and compared for chip area and power and observed 20% improvements. This thesis also presents threshold logic implementation of the reverse converter.
ContributorsChalivendra, Gayathri (Author) / Vrudhula, Sarma (Thesis advisor) / Shrivastava, Aviral (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2011
Description
Thin film transistors (TFTs) are being used in a wide variety of applications such as image sensors, radiation detectors, as well as for use in liquid crystal displays. However, there is a conspicuous absence of interface electronics for bridging the gap between the flexible sensors and digitized displays. Hence is the need to build the same. In this thesis, the feasibility of building mixed analog circuits in TFTs are explored and demonstrated. A flexible CMOS op-amp is demonstrated using a-Si:H and pentacene TFTs. The achieved performance is ¡Ö 50 dB of DC open loop gain with unity gain frequency (UGF) of 7 kHz. The op-amp is built on the popular 2 stage topology with the 2nd stage being cascoded to provide sufficient gain. A novel biasing circuit was successfully developed modifying the gm biasing circuit to retard the performance degradation as the TFTs aged. A switched capacitor 7 bit DAC was developed in only nMOS topology using a-Si:H TFTs, based on charge sharing concept. The DAC achieved a maximum differential non-linearity (DNL) of 0.6 least significant bit (LSB), while the maximum integral non-linearity (INL) was 1 LSB. TFTs were used as switches in this architecture; as a result the performance was quite unchanged even as the TFTs degraded. A 5 bit fully flash ADC was also designed using all nMOS a-Si:H TFTs. Gray coding was implemented at the output to avoid errors due to comparator meta-stability. Finally a 5 bit current steering DAC was also built using all nMOS a-Si:H TFTs. However, due to process variation, the DNL was increased to 1.2 while the INL was about 1.8 LSB. Measurements were made on the external stress effects on zinc indium oxide (ZIO) TFTs. Electrically induced stresses were studied applying DC bias on the gate and drain. These stresses shifted the device characteristics like threshold voltage and mobility. The TFTs were then mechanically stressed by stretching them across cylindrical structures of various radii. Both the subthreshold swing and mobility underwent significant changes when the stress was tensile while the change was minor under compressive stress, applied parallel to channel length.
ContributorsDey, Aritra (Author) / Allee, David R. (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Garrity, Douglas A (Committee member) / Song, Hongjiang (Committee member) / Clark, Lawrence T (Committee member) / Arizona State University (Publisher)
Created2011
Description
In this thesis, a Built-in Self Test (BiST) based testing solution is proposed to measure linear and non-linear impairments in the RF Transmitter path using analytical approach. Design issues and challenges with the impairments modeling and extraction in transmitter path are discussed. Transmitter is modeled for I/Q gain & phase mismatch, system non-linearity and DC offset using Matlab. BiST architecture includes a peak detector which includes a self mode mixer and 200 MHz filter. Self Mode mixing operation with filtering removes the high frequency signal contents and allows performing analysis on baseband frequency signals. Transmitter impairments were calculated using spectral analysis of output from the BiST circuitry using an analytical method. Matlab was used to simulate the system with known test impairments and impairment values from simulations were calculated based on system modeling in Mathematica. Simulated data is in good correlation with input test data along with very fast test time and high accuracy. The key contribution of the work is that, system impairments are extracted from transmitter response at baseband frequency using envelope detector hence eliminating the need of expensive high frequency ATE (Automated Test Equipments).
ContributorsGoyal, Nitin (Author) / Ozev, Sule (Thesis advisor) / Duman, Tolga (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2011
Description
A workload-aware low-power neuromorphic controller for dynamic power and thermal management in VLSI systems is presented. The neuromorphic controller predicts future workload and temperature values based on the past values and CPU performance counters and preemptively regulates supply voltage and frequency. System-level measurements from stateof-the-art commercial microprocessors are used to get workload, temperature and CPU performance counter values. The controller is designed and simulated using circuit-design and synthesis tools. At device-level, on-chip planar inductors suffer from low inductance occupying large chip area. On-chip inductors with integrated magnetic materials are designed, simulated and fabricated to explore performance-efficiency trade offs and explore potential applications such as resonant clocking and on-chip voltage regulation. A system level study is conducted to evaluate the effect of on-chip voltage regulator employing magnetic inductors as the output filter. It is concluded that neuromorphic power controller is beneficial for fine-grained per-core power management in conjunction with on-chip voltage regulators utilizing scaled magnetic inductors.
ContributorsSinha, Saurabh (Author) / Cao, Yu (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Yu, Hongbin (Committee member) / Christen, Jennifer B. (Committee member) / Arizona State University (Publisher)
Created2011
Description
Negative bias temperature instability (NBTI) and channel hot carrier (CHC) are important reliability issues impacting analog circuit performance and lifetime. Compact reliability models and efficient simulation methods are essential for circuit level reliability prediction. This work proposes a set of compact models of NBTI and CHC effects for analog and mixed-signal circuit, and a direct prediction method which is different from conventional simulation methods. This method is applied in circuit benchmarks and evaluated. This work helps with improving efficiency and accuracy of circuit aging prediction.
ContributorsZheng, Rui (Author) / Cao, Yu (Thesis advisor) / Yu, Hongyu (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2011
Description
ABSTRACT To meet stringent market demands, manufacturers must produce Radio Frequency (RF) transceivers that provide wireless communication between electronic components used in consumer products at extremely low cost. Semiconductor manufacturers are in a steady race to increase integration levels through advanced system-on-chip (SoC) technology. The testing costs of these devices tend to increase with higher integration levels. As the integration levels increase and the devices get faster, the need for high-calibre low cost test equipment become highly dominant. However testing the overall system becomes harder and more expensive. Traditionally, the transceiver system is tested in two steps utilizing high-calibre RF instrumentation and mixed-signal testers, with separate measurement setups for transmitter and receiver paths. Impairments in the RF front-end, such as the I/Q gain and phase imbalance and nonlinearity, severely affect the performance of the device. The transceiver needs to be characterized in terms of these impairments in order to guarantee good performance and specification requirements. The motivation factor for this thesis is to come up with a low cost and computationally simple extraction technique of these impairments. In the proposed extraction technique, the mapping between transmitter input signals and receiver output signals are used to extract the impairment and nonlinearity parameters. This is done with the help of detailed mathematical modeling of the transceiver. While the overall behavior is nonlinear, both linear and nonlinear models to be used under different test setups are developed. A two step extraction technique has been proposed in this work. The extraction of system parameters is performed by using the mathematical model developed along with a genetic algorithm implemented in MATLAB. The technique yields good extraction results with reasonable error. It uses simple mathematical operation which makes the extraction fast and computationally simple when compared to other existing techniques such as traditional two step dedicated approach, Nonlinear Solver (NLS) approach, etc. It employs frequency domain analysis of low frequency input and output signals, over cumbersome time domain computations. Thus a test method, including detailed behavioral modeling of the transceiver, appropriate test signal design along with a simple algorithm for extraction is presented.
ContributorsSreenivassan, Aiswariya (Author) / Ozev, Sule (Thesis advisor) / Kiaei, Sayfe (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2011
Description
Voltage Control Oscillator (VCO) is one of the most critical blocks in Phase Lock Loops (PLLs). LC-tank VCOs have a superior phase noise performance, however they require bulky passive resonators and often calibration architectures to overcome their limited tuning range. Ring oscillator (RO) based VCOs are attractive for digital technology applications owing to their ease of integration, small die area and scalability in deep submicron processes. However, due to their supply sensitivity and poor phase noise performance, they have limited use in applications demanding low phase noise floor, such as wireless or optical transceivers. Particularly, out-of-band phase noise of RO-based PLLs is dominated by RO performance, which cannot be suppressed by the loop gain, impairing RF receiver's sensitivity or BER of optical clock-data recovery circuits. Wide loop bandwidth PLLs can overcome RO noise penalty, however, they suffer from increased in-band noise due to reference clock, phase-detector and charge-pump. The RO phase noise is determined by the noise coming from active devices, supply, ground and substrate. The authors adopt an auxiliary circuit with inverse delay sensitivity to supply noise, which compensates for the delay variation of inverter cells. Feed-forward noise-cancelling architecture that improves phase noise characteristic of RO based PLLs is presented. The proposed circuit dynamically attenuates RO phase noise contribution outside the PLL bandwidth, or in a preferred band. The implemented noise-cancelling loop potentially enables application of RO based PLL for demanding frequency synthesizers applications, such as optical links or high-speed serial I/Os.
ContributorsMin, Seungkee (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Ozev, Sule (Committee member) / Towe, Bruce (Committee member) / Arizona State University (Publisher)
Created2011