Matching Items (13)
153981-Thumbnail Image.png
Description
In this work a newly fabricated organic solar cell based on a composite of fullerene derivative [6,6]-phenyl-C61 butyric acid methyl ester (PCBM) and regioregular poly (3-hexylthiophene) (P3HT) with an added interfacial layer of AgOx in between the PEDOT:PSS layer and the ITO layer is investigated. Previous equivalent circuit models are

In this work a newly fabricated organic solar cell based on a composite of fullerene derivative [6,6]-phenyl-C61 butyric acid methyl ester (PCBM) and regioregular poly (3-hexylthiophene) (P3HT) with an added interfacial layer of AgOx in between the PEDOT:PSS layer and the ITO layer is investigated. Previous equivalent circuit models are discussed and an equivalent circuit model is proposed for the fabricated device. Incorporation of the AgOx interfacial layer shows an increase in fill factor (by 33%) and power conversion efficiency (by 28%). Moreover proper correlation has been achieved between the experimental and simulated I-V plots. The simulation shows that device characteristics can be explained with accuracy by the proposed model.
ContributorsHossain, Nazmul (Author) / Alford, Terry L. (Thesis advisor) / Theodore, David (Committee member) / Krause, Stephen (Committee member) / Arizona State University (Publisher)
Created2015
158719-Thumbnail Image.png
Description
Perovskite solar cells are the next generation organic-inorganic hybrid technology and have achieved remarkable efficiencies comparable to Si-based conventional solar cells. Since their inception in 2009 with an efficiency of 3.9%, they have improved tremendously over the past decade and recently demonstrated 25.2% efficiency for single-junction devices. There are a

Perovskite solar cells are the next generation organic-inorganic hybrid technology and have achieved remarkable efficiencies comparable to Si-based conventional solar cells. Since their inception in 2009 with an efficiency of 3.9%, they have improved tremendously over the past decade and recently demonstrated 25.2% efficiency for single-junction devices. There are a few hurdles, however, that prevent this technology from realizing their full potential, such as stability and toxicity of the perovskites. Apart from solution processing in the fabrication of perovskites, precursor composition plays a major role in determining the quality of the thin film and its general properties. This work studies novel approaches for improving the efficiency and stability of the perovskite solar cells with minimized toxicity. The effect of excess Pb on photo-degradation in MAPbI3 perovskites in an inverted device architecture was studied with a focus on improving stability and efficiency. Precursor concentration with 5% excess Pb was found to be optimal for better efficiency and stability against photo-degradation. Further improvements in efficiency were made possible through the addition of Zirconium Acetylacetonate as a secondary electron buffer layer. A concentration of 1.5mg/ml was found to be optimal for demonstrating better efficiency and stability. Partial substitution of Pb with non-toxic Sr was also studied for improving the stability of inverted devices. Using acetate-derived precursors, 10% Sr was introduced into perovskites for improvements to the stability of the device.

In another study, triple-cation perovskites with FAMACs cations were studied with doping different amounts of Phenyl Ethyl Ammonium (PEA) to induce a quasi 2D-3D structure for improved moisture stability. Doping the perovskite with 1.67% PEA was found to be best for improved morphology with fewer pinholes, which further resulted in better VOC and stability. A passivation effect for triple-cation perovskites was further proposed with the addition of a Guanidinium Iodide layer on the perovskite. Concentrations of 1mg/ml and 2mg/ml were demonstrated to be best for reducing defects and trap states and increasing the overall stability of the device.
ContributorsYerramilli, Aditya (Author) / Alford, Terry (Thesis advisor) / Theodore, David (Committee member) / Chen, Yuanqing (Committee member) / Arizona State University (Publisher)
Created2020
187671-Thumbnail Image.png
Description
Over the past few years, research into the use of doped diamond in electronics has seen an exponential growth. In the course of finding ways to reduce the contact resistivity, nanocarbon materials have been an interesting focus. In this work, the transfer length method (TLM) was used to investigate Ohmic

Over the past few years, research into the use of doped diamond in electronics has seen an exponential growth. In the course of finding ways to reduce the contact resistivity, nanocarbon materials have been an interesting focus. In this work, the transfer length method (TLM) was used to investigate Ohmic contact properties using the tri-layer stack Ti/Pt/Au on nitrogen-doped n-type conducting nano-carbon (nanoC) layers grown on (100) diamond substrates. The nanocarbon material was characterized using Secondary Ion Mass Spectrometry (SIMS), Scanning electron Microscopy (SEM) X-ray diffraction (XRD), Raman scattering and Hall effect measurements to probe the materials characteristics. Room temperature electrical measurements were taken, and samples were annealed to observe changes in electrical conductivity. Low specific contact resistivity values of 8 x 10^-5 Ωcm^2 were achieved, which was almost two orders of magnitude lower than previously reported values. The results were attributed to the increased nitrogen incorporation, and the presence of electrically active defects which leads to an increase in conduction in the nanocarbon. Further a study of light phosphorus doped layers using similar methods with Ti/Pt/Au contacts again yielded a low contact resistivity of about 9.88 x 10^-2 Ωcm^2 which is an interesting prospect among lightly doped diamond films for applications in devices such as transistors. In addition, for the first time, hafnium was substituted for Ti in the contact stack (Hf/Pt/Au) and studied on nitrogen doped nanocarbon films, which resulted in low contact resistivity values on the order of 10^-2 Ωcm^2. The implications of the results were discussed, and recommendations for improving the experimental process was outlined. Lastly, a method for the selective area growth of nanocarbon was developed and studied and the results provided an insight into how different characterizations can be used to confirm the presence of the nanocrystalline diamond material, the limitations due to the film thickness was explored and ideas for future work was proposed.
ContributorsAmonoo, Evangeline Abena (Author) / Thornton, Trevor (Thesis advisor) / Alford, Terry L (Thesis advisor) / Anwar, Shahriar (Committee member) / Theodore, David (Committee member) / Arizona State University (Publisher)
Created2023