Matching Items (6)
Description
Past experiments have revealed several unusual properties about interstitial hydrogen atoms in niobium. Absorption isotherms showed that niobium absorbs a large amount of hydrogen without changing its crystal structure. These isotherms also revealed that the interactions between hydrogen atoms in niobium are a combination of long-range attraction and short-range repulsion and exhibit many-body characteristics. Other experiments reported the facile thermal diffusion of hydrogen and deuterium in niobium. Contrary to the classical theory of diffusion, these experiments revealed a break in the activation energy of hydrogen diffusion at low temperatures, but no such break was reported for deuterium. Finally, experiments report a phenomenon called electromigration, where hydrogen atoms inside niobium respond to weak electric fields as if they had a positive effective charge. These experimental results date back to when tools like density functional theory (DFT) and modern high-performance computing abilities did not exist. Therefore, the current understanding of these properties is primarily based on inferences from experimental results. Understanding these properties at a deeper level, besides being scientifically important, can profoundly affect various applications involving hydrogen separation and transport. The high-level goal of this work is to use first-principles methods to explain the discussed properties of interstitial hydrogen in niobium. DFT calculations were used to study hydrogen atoms' site preference in niobium and its effect on the cell shape and volume of the host cell. The nature and origin of the interactions between hydrogen atoms were studied through interaction energy, structural, partial charge, and electronic densities of state analysis. A phenomenological model with fewer parameters than traditional models was developed and fit to the experimental absorption data. Thermodynamic quantities such as the enthalpy and entropy of hydrogen dissolution in niobium were derived from this model. The enthalpy of hydrogen dissolution in niobium was also calculated using DFT by sampling different geometric configurations and performing an ensemble-based averaging. Further work is required to explain the observed isotope effects for hydrogen diffusion in niobium and the electromigration phenomena. Applications of the niobium-hydrogen system require studying hydrogen's behavior on niobium's surface.
ContributorsRamcahandran, Arvind (Author) / Lackner, Klaus S. (Thesis advisor) / Zhuang, Houlong (Thesis advisor) / Muhich, Christopher (Committee member) / Singh, Arunima (Committee member) / Arizona State University (Publisher)
Created2021
Description
Anthropogenic processes have increased the concentration of toxic Se, As and N in water. Oxo-anions of these species are poisonous to aquatic and terrestrial life. Current remediation techniques have low selectivity towards their removal. Understanding the chemistry and physics which control oxo-anion adsorption on metal oxide and the catalytic nitrate reduction to inform improved remediation technologies can be done using Density functional theory (DFT) calculations. The adsorption of selenate, selenite, and arsenate was investigated on the alumina and hematite to inform sorbent design strategies. Adsorption energies were calculated as a function of surface structure, composition, binding motif, and pH within a hybrid implicit-explicit solvation strategy. Correlations between surface property descriptors including water network structure, cationic species identity, and facet and the adsorption energies of the ions show that the surface water network controls the adsorption energy more than any other, including the cationic species of the metal-oxide. Additionally, to achieve selectivity for selenate over sulphate, differences in their electronic structure must be exploited, for example by the reduction of selenate to selenite by Ti3+ cations.
Thermochemical or electrochemical reduction pathways to convert NO3- to N2 or NH3, which are benign or value-added products, respectively are examined over single-atom electrocatalysts (SAC) in Cu. The activity and selectivity for nitrate reduction are compared with the competitive hydrogen evolution reaction (HER). Cu suppresses HER but produces toxic NO2- because of a high activation barrier for cleaving the second N-O bond. SACs provide secondary sites for reaction and break traditional linear scaling relationships. Ru-SACs selectively produce NH3 because N-O bond scission is facile, and the resulting N remains isolated on SAC sites; reacting with H+ from solvating H2O to form ammonia. Conversely, Pd-SAC forms N2 because the reduced N* atoms migrate to the Cu surface, which has a low H availability, allowing N atoms to combine to N2. This relation between N* binding preference and reduction product is demonstrated across an array of SAC elements.
Hence, the solvation effects on the surface critically alter the activity of adsorption and catalysis and the removal of toxic pollutants can be improved by altering the surface water network.
ContributorsGupta, Srishti (Author) / Muhich, Christopher L (Thesis advisor) / Singh, Arunima (Committee member) / Emady, Heather (Committee member) / Westerhoff, Paul (Committee member) / Deng, Shuguang (Committee member) / Arizona State University (Publisher)
Created2023
Description
The structural and electronic properties of compositionally complex semiconductors have long been of both theoretical interest and engineering importance. As a new class of materials with an intrinsic compositional complexity, medium entropy alloys (MEAs) are immensely studied mainly for their excellent mechanical properties. The electronic properties of MEAs, however, are less well investigated. In this thesis, various properties such as electronic, spin, and thermal properties of two three-dimensional (3D) and two two-dimensional (2D) compositionally complex semiconductors are demonstrated to have promising various applications in photovoltaic, thermoelectric, and spin quantum bits (qubits).3D semiconducting Si-Ge-Sn and C3BN alloys is firstly introduced. Density functional theory (DFT) calculations and Monte Carlo simulations show that the Si1/3Ge1/3Sn1/3 MEA exhibits a large local distortion effect yet no chemical short-range order. Single vacancies in this MEA can be stabilized by bond reformations while the alloy retains semiconducting. DFT and molecular dynamics calculations predict that increasing the compositional disorder in SiyGeySnx MEAs enhances their electrical conductivity while weakens the thermal conductivity at room temperature, making the SiyGeySnx MEAs promising functional materials for thermoelectric devices. Furthermore, the nitrogen-vacancy (NV) center analog in C3BN (NV-C3BN) is studied to explore its applications in quantum computers. This analog possesses similar properties to the NV center in diamond such as a highly localized spin density and strong hyperfine interactions, making C3BN suitable for hosting spin qubits. The analog also displays two zero-phonon-line energies corresponding to wavelengths close to the ideal telecommunication band width, useful for quantum communications.
2D semiconducting transition metal chalcogenides (TMCs) and PtPN are also investigated. The quaternary compositionally complex TMCs show tunable properties such as in-plane lattice constants, band gaps, and band alignment, using a high through-put workflow from DFT calculations in conjunction with the virtual crystal approximation. A novel 2D semiconductor PtPN of direct bandgap is also predicted, based on pentagonal tessellation.
The work in the thesis offers guidance to the experimental realization of these novel semiconductors, which serve as valuable prototypes of other compositionally complex systems from other elements.
2D semiconducting transition metal chalcogenides (TMCs) and PtPN are also investigated. The quaternary compositionally complex TMCs show tunable properties such as in-plane lattice constants, band gaps, and band alignment, using a high through-put workflow from DFT calculations in conjunction with the virtual crystal approximation. A novel 2D semiconductor PtPN of direct bandgap is also predicted, based on pentagonal tessellation.
The work in the thesis offers guidance to the experimental realization of these novel semiconductors, which serve as valuable prototypes of other compositionally complex systems from other elements.
ContributorsWang, Duo (Author) / Zhuang, Houlong (Thesis advisor) / Singh, Arunima (Committee member) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2020
Description
Single-layer pentagonal materials have received limited attention compared with their counterparts with hexagonal structures. They are two-dimensional (2D) materials with pentagonal structures, that exhibit novel electronic, optical, or magnetic properties. There are 15 types of pentagonal tessellations which allow plenty of options for constructing 2D pentagonal lattices. Few of them have been explored theoretically or experimentally. Studying this new type of 2D materials with density functional theory (DFT) will inspire the discovery of new 2D materials and open up applications of these materials in electronic and magnetic devices.In this dissertation, DFT is applied to discover novel 2D materials with pentagonal structures. Firstly, I examine the possibility of forming a 2D nanosheet with the vertices of type 15 pentagons occupied by boron, silicon, phosphorous, sulfur, gallium, germanium or tin atoms. I obtain different rearranged structures such as a single-layer gallium sheet with triangular patterns. Then the exploration expands to other 14 types of pentagons, leading to the discoveries of carbon nanosheets with Cairo tessellation (type 2/4 pentagons) and other patterns. The resulting 2D structures exhibit diverse electrical properties. Then I reveal the hidden Cairo tessellations in the pyrite structures and discover a family of planar 2D materials (such as PtP2), with a chemical formula of AB2 and space group pa ̄3. The combination of DFT and geometries opens up a novel route for the discovery of new 2D materials. Following this path, a series of 2D pentagonal materials such as 2D CoS2 are revealed with promising electronic and magnetic applications. Specifically, the DFT calculations show that CoS2 is an antiferromagnetic semiconductor with a band gap of 2.24 eV, and a N ́eel temperature of about 20 K. In order to enhance the superexchange interactions between the ions in this binary compound, I explore the ternary 2D pentagonal material CoAsS, that lacks the inversion symmetry. I find out CoAsS exhibits a higher Curie temperature of 95 K and a sizable piezoelectricity (d11=-3.52 pm/V). In addition to CoAsS, 34 ternary 2D pentagonal materials are discovered, among which I focus on FeAsS, that is a semiconductor showing strong magnetocrystalline anisotropy and sizable Berry curvature. Its magnetocrystalline anisotropy energy is 440 μeV/Fe ion, higher than many other 2D magnets that have been found.
Overall, this work not only provides insights into the structure-property relationship of 2D pentagonal materials and opens up a new route of studying 2D materials by combining geometry and computational materials science, but also shows the potential applications of 2D pentagonal materials in electronic and magnetic devices.
Overall, this work not only provides insights into the structure-property relationship of 2D pentagonal materials and opens up a new route of studying 2D materials by combining geometry and computational materials science, but also shows the potential applications of 2D pentagonal materials in electronic and magnetic devices.
ContributorsLiu, Lei (Author) / Zhuang, Houlong (Thesis advisor) / Singh, Arunima (Committee member) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2020
Description
Miniaturization of microdevices comes at the cost of increased circuit complexity and operating current densities. At high current densities, the resulting electron wind imparts a large momentum to metal ions triggering electromigration which leads to degradation of interconnects and solder, ultimately resulting in circuit failure. Although electromigration-induced defects in electronic materials can manifest in several forms, the formation of voids is a common occurrence. This research aims at understanding the morphological evolution of voids under electromigration by formulating a diffuse interface approach that accounts for anisotropic mobility in the metallic interconnect. Based on an extensive parametric study, this study reports the conditions under which pancaking of voids or the novel void ‘swimming’ regimes are observed. Finally, inferences are drawn to formulate strategies using which the reliability of interconnects can be improved.
ContributorsVemulapalli, Sree Shivani (Author) / Ankit, Kumar (Thesis advisor) / Chawla, Nikhilesh (Committee member) / Singh, Arunima (Committee member) / Arizona State University (Publisher)
Created2020
Description
Titanium dioxide is an essential material under research for energy and environmental applications, chiefly through its photocatalytic properties. These properties allow it to be used for water-splitting, detoxification, and photovoltaics, in addition to its conventional uses in pigmentation and sunscreen. Titanium dioxide exists in several polymorphic structures, of which the most common are rutile and anatase. We focused on anatase for the purposes of this research, due to its promising results for hydrolysis.
Anatase exists often in its reduced form (TiO2-x), enabling it to perform redox reactions through the absorption and release of oxygen into/from the crystal lattice. These processes result in structural changes, induced by defects in the material, which can theoretically be observed using advanced characterization methods. In situ electron microscopy is one of such methods, and can provide a window into these structural changes. However, in order to interpret the structural evolution caused by defects in materials, it is often necessary and pertinent to use atomistic simulations to compare the experimental images with models.
In this thesis project, we modeled the defect structures in anatase, around oxygen vacancies and at surfaces, using molecular dynamics, benchmarked with density functional theory. Using a “reactive” forcefield designed for the simulation of interactions between anatase and water that can model and treat bonding through the use of bond orders, different vacancy structures were analyzed and simulated. To compare these theoretical, generated models with experimental data, the “multislice approach” to TEM image simulation was used. We investigated a series of different vacancy configurations and surfaces and generated fingerprints for comparison with TEM experiments. This comparison demonstrated a proof of concept for a technique suggesting the possibility for the identification of oxygen vacancy structures directly from TEM images. This research aims to improve our atomic-level understanding of oxide materials, by providing a methodology for the analysis of vacancy formation from very subtle phenomena in TEM images.
Anatase exists often in its reduced form (TiO2-x), enabling it to perform redox reactions through the absorption and release of oxygen into/from the crystal lattice. These processes result in structural changes, induced by defects in the material, which can theoretically be observed using advanced characterization methods. In situ electron microscopy is one of such methods, and can provide a window into these structural changes. However, in order to interpret the structural evolution caused by defects in materials, it is often necessary and pertinent to use atomistic simulations to compare the experimental images with models.
In this thesis project, we modeled the defect structures in anatase, around oxygen vacancies and at surfaces, using molecular dynamics, benchmarked with density functional theory. Using a “reactive” forcefield designed for the simulation of interactions between anatase and water that can model and treat bonding through the use of bond orders, different vacancy structures were analyzed and simulated. To compare these theoretical, generated models with experimental data, the “multislice approach” to TEM image simulation was used. We investigated a series of different vacancy configurations and surfaces and generated fingerprints for comparison with TEM experiments. This comparison demonstrated a proof of concept for a technique suggesting the possibility for the identification of oxygen vacancy structures directly from TEM images. This research aims to improve our atomic-level understanding of oxide materials, by providing a methodology for the analysis of vacancy formation from very subtle phenomena in TEM images.
ContributorsShindel, Benjamin Noam (Author) / Crozier, Peter (Thesis director) / Anwar, Shahriar (Committee member) / Singh, Arunima (Committee member) / Materials Science and Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2019-05