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ABSTRACT

Autonomous smart windows may be integrated with a stack of active components, such as electrochromic devices, to modulate the opacity/transparency by an applied voltage. Here, we describe the processing and performance of two classes of visibly-transparent photovoltaic materials, namely inorganic (ZnO thin film) and fully organic (PCDTBT:PC70BM), for integration

ABSTRACT

Autonomous smart windows may be integrated with a stack of active components, such as electrochromic devices, to modulate the opacity/transparency by an applied voltage. Here, we describe the processing and performance of two classes of visibly-transparent photovoltaic materials, namely inorganic (ZnO thin film) and fully organic (PCDTBT:PC70BM), for integration with electrochromic stacks.

Sputtered ZnO (2% Mn) films on ITO, with transparency in the visible range, were used to fabricate metal-semiconductor (MS), metal-insulator-semiconductor (MIS), and p-i-n heterojunction devices, and their photovoltaic conversion under ultraviolet (UV) illumination was evaluated with and without oxygen plasma-treated surface electrodes (Au, Ag, Al, and Ti/Ag). The MS Schottky parameters were fitted against the generalized Bardeen model to obtain the density of interface states (Dit ≈ 8.0×1011 eV−1cm−2) and neutral level (Eo ≈ -5.2 eV). These devices exhibited photoconductive behavior at λ = 365 nm, and low-noise Ag-ZnO detectors exhibited responsivity (R) and photoconductive gain (G) of 1.93×10−4 A/W and 6.57×10−4, respectively. Confirmed via matched-pair analysis, post-metallization, oxygen plasma treatment of Ag and Ti/Ag electrodes resulted in increased Schottky barrier heights, which maximized with a 2 nm SiO2 electron blocking layer (EBL), coupled with the suppression of recombination at the metal/semiconductor interface and blocking of majority carriers. For interdigitated devices under monochromatic UV-C illumination, the open-circuit voltage (Voc) was 1.2 V and short circuit current density (Jsc), due to minority carrier tunneling, was 0.68 mA/cm2.

A fully organic bulk heterojunction photovoltaic device, composed of poly[N-9’-heptadecanyl-2,7-carbazole-alt-5,5-(4’,7’-di-2-thienyli2’,1’,3’-benzothiadiazole)]:phenyl-C71-butyric-acidmethyl (PCDTBT:PC70BM), with corresponding electron and hole transport layers, i.e., LiF with Al contact and conducting
on-conducting (nc) PEDOT:PSS (with ITO/PET or Ag nanowire/PDMS contacts; the illuminating side), respectively, was developed. The PCDTBT/PC70BM/PEDOT:PSS(nc)/ITO/PET stack exhibited the highest performance: power conversion efficiency (PCE) ≈ 3%, Voc = 0.9V, and Jsc ≈ 10-15 mA/cm2. These stacks exhibited high visible range transparency, and provided the requisite power for a switchable electrochromic stack having an inkjet-printed, optically-active layer of tungsten trioxide (WO3), peroxo-tungstic acid dihydrate, and titania (TiO2) nano-particle-based blend. The electrochromic stacks (i.e., PET/ITO/LiClO4/WO3 on ITO/PET and Ag nanowire/PDMS substrates) exhibited optical switching under external bias from the PV stack (or an electrical outlet), with 7 s coloration time, 8 s bleaching time, and 0.36-0.75 optical modulation at λ = 525 nm. The devices were paired using an Internet of Things controller that enabled wireless switching.
ContributorsAzhar, Ebraheem (Author) / Yu, Hongbin (Thesis advisor) / Dey, Sandwip (Thesis advisor) / Goryll, Michael (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2018
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Description
Recently, nanostructured metamaterials have attracted lots of attentions due to its tunable artificial properties. In particular, nanowire
anohole based metamaterials which are known of the capability of large area fabrication were intensively studied. Most of the studies are only based on the electrical responses of the metamaterials; however, magnetic response, is

Recently, nanostructured metamaterials have attracted lots of attentions due to its tunable artificial properties. In particular, nanowire
anohole based metamaterials which are known of the capability of large area fabrication were intensively studied. Most of the studies are only based on the electrical responses of the metamaterials; however, magnetic response, is usually neglected since magnetic material does not exist naturally within the visible or infrared range. For the past few years, artificial magnetic response from nanostructure based metamaterials has been proposed. This reveals the possibility of exciting resonance modes based on magnetic responses in nanowire
anohole metamaterials which can potentially provide additional enhancement on radiative transport. On the other hand, beyond classical far-field radiative heat transfer, near-field radiation which is known of exceeding the Planck’s blackbody limit has also become a hot topic in the field.

This PhD dissertation aims to obtain a deep fundamental understanding of nanowire
anohole based metamaterials in both far-field and near-field in terms of both electrical and magnetic responses. The underlying mechanisms that can be excited by nanowire
anohole metamaterials such as electrical surface plasmon polariton, magnetic hyperbolic mode, magnetic polariton, etc., will be theoretically studied in both far-field and near-field. Furthermore, other than conventional effective medium theory which only considers the electrical response of metamaterials, the artificial magnetic response of metamaterials will also be studied through parameter retrieval of far-field optical and radiative properties for studying near-field radiative transport. Moreover, a custom-made AFM tip based metrology will be employed to experimentally study near-field radiative transfer between a plate and a sphere separated by nanometer vacuum gaps in vacuum. This transformative research will break new ground in nanoscale radiative heat transfer for various applications in energy systems, thermal management, and thermal imaging and sensing.
ContributorsChang, Jui-Yung (Author) / Wang, Liping (Thesis advisor) / Phelan, Patrick (Committee member) / Wang, Robert (Committee member) / Yu, Hongbin (Committee member) / Hildreth, Owen (Committee member) / Arizona State University (Publisher)
Created2017
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Description
The larger tolerance to lattice mismatch in growth of semiconductor nanowires (NWs) offers much more flexibility for achieving a wide range of compositions and bandgaps via alloying within a single substrate. The bandgap of III-V InGaAsP alloy NWs can be tuned to cover a wide range of (0.4, 2.25) eV,

The larger tolerance to lattice mismatch in growth of semiconductor nanowires (NWs) offers much more flexibility for achieving a wide range of compositions and bandgaps via alloying within a single substrate. The bandgap of III-V InGaAsP alloy NWs can be tuned to cover a wide range of (0.4, 2.25) eV, appealing for various optoelectronic applications such as photodetectors, solar cells, Light Emitting Diodes (LEDs), lasers, etc., given the existing rich knowledge in device fabrication based on these materials.

This dissertation explores the growth of InGaAsP alloys using a low-cost method that could be potentially important especially for III-V NW-based solar cells. The NWs were grown by Vapor-Liquid-Solid (VLS) and Vapor-Solid (VS) mechanisms using a Low-Pressure Chemical Vapor Deposition (LPCVD) technique. The concept of supersaturation was employed to control the morphology of NWs through the interplay between VLS and VS growth mechanisms. Comprehensive optical and material characterizations were carried out to evaluate the quality of the grown materials.

The growth of exceptionally high quality III-V phosphide NWs of InP and GaP was studied with an emphasis on the effects of vastly different sublimation rates of the associated III and V elements. The incorporation of defects exerted by deviation from stoichiometry was examined for GaP NWs, with an aim towards maximization of bandedge-to-defect emission ratio. In addition, a VLS-VS assisted growth of highly stoichiometric InP thin films and nano-networks with a wide temperature window from 560◦C to 720◦C was demonstrated. Such growth is shown to be insensitive to the type of substrates such as silicon, InP, and fused quartz. The dual gradient method was exploited to grow composition-graded ternary alloy NWs of InGaP, InGaAs, and GaAsP with different bandgaps ranging from 0.6 eV to 2.2 eV, to be used for making laterally-arrayed multiple bandgap (LAMB) solar cells. Furthermore, a template-based growth of the NWs was attempted based on the Si/SiO2 substrate. Such platform can be used to grow a wide range of alloy nanopillar materials, without being limited by typical lattice mismatch, providing a low cost universal platform for future PV solar cells.
ContributorsHashemi Amiri, Seyed Ebrahim (Author) / Ning, Cun-Zheng (Thesis advisor) / Petuskey, William (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2018
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Description
The objective of this dissertation is to study the use of metamaterials as narrow-band and broadband selective absorbers for opto-thermal and solar thermal energy conversion. Narrow-band selective absorbers have applications such as plasmonic sensing and cancer treatment, while one of the main applications of selective metamaterials with broadband absorption is

The objective of this dissertation is to study the use of metamaterials as narrow-band and broadband selective absorbers for opto-thermal and solar thermal energy conversion. Narrow-band selective absorbers have applications such as plasmonic sensing and cancer treatment, while one of the main applications of selective metamaterials with broadband absorption is efficiently converting solar energy into heat as solar absorbers.

This dissertation first discusses the use of gold nanowires as narrow-band selective metamaterial absorbers. An investigation into plasmonic localized heating indicated that film-coupled gold nanoparticles exhibit tunable selective absorption based on the size of the nanoparticles. By using anodized aluminum oxide templates, aluminum nanodisc narrow-band absorbers were fabricated. A metrology instrument to measure the reflectance and transmittance of micro-scale samples was also developed and used to measure the reflectance of the aluminum nanodisc absorbers (220 µm diameter area). Tuning of the resonance wavelengths of these absorbers can be achieved through changing their geometry. Broadband absorption can be achieved by using a combination of geometries for these metamaterials which would facilitate their use as solar absorbers.

Recently, solar energy harvesting has become a topic of considerable research investigation due to it being an environmentally conscious alternative to fossil fuels. The next section discusses the steady-state temperature measurement of a lab-scale multilayer solar absorber, named metafilm. A lab-scale experimental setup is developed to characterize the solar thermal performance of selective solar absorbers. Under a concentration factor of 20.3 suns, a steady-state temperature of ~500 degrees Celsius was achieved for the metafilm compared to 375 degrees Celsius for a commercial black absorber under the same conditions. Thermal durability testing showed that the metafilm could withstand up to 700 degrees Celsius in vacuum conditions and up to 400 degrees Celsius in atmospheric conditions with little degradation of its optical and radiative properties. Moreover, cost analysis of the metafilm found it to cost significantly less ($2.22 per square meter) than commercial solar coatings ($5.41-100 per square meter).

Finally, this dissertation concludes with recommendations for further studies like using these selective metamaterials and metafilms as absorbers and emitters and using the aluminum nanodiscs on glass as selective filters for photovoltaic cells to enhance solar thermophotovoltaic energy conversion.
ContributorsAlshehri, Hassan (Author) / Wang, Liping (Thesis advisor) / Phelan, Patrick (Committee member) / Rykaczewski, Konrad (Committee member) / Wang, Robert (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2018
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Description
Wide bandgap (WBG) semiconductors GaN (3.4 eV), Ga2O3 (4.8 eV) and AlN (6.2 eV), have gained considerable interests for energy-efficient optoelectronic and electronic applications in solid-state lighting, photovoltaics, power conversion, and so on. They can offer unique device performance compared with traditional semiconductors such as Si. Efficient GaN based light-emitting

Wide bandgap (WBG) semiconductors GaN (3.4 eV), Ga2O3 (4.8 eV) and AlN (6.2 eV), have gained considerable interests for energy-efficient optoelectronic and electronic applications in solid-state lighting, photovoltaics, power conversion, and so on. They can offer unique device performance compared with traditional semiconductors such as Si. Efficient GaN based light-emitting diodes (LEDs) have increasingly displaced incandescent and fluorescent bulbs as the new major light sources for lighting and display. In addition, due to their large bandgap and high critical electrical field, WBG semiconductors are also ideal candidates for efficient power conversion.

In this dissertation, two types of devices are demonstrated: optoelectronic and electronic devices. Commercial polar c-plane LEDs suffer from reduced efficiency with increasing current densities, knowns as “efficiency droop”, while nonpolar/semipolar LEDs exhibit a very low efficiency droop. A modified ABC model with weak phase space filling effects is proposed to explain the low droop performance, providing insights for designing droop-free LEDs. The other emerging optoelectronics is nonpolar/semipolar III-nitride intersubband transition (ISBT) based photodetectors in terahertz and far infrared regime due to the large optical phonon energy and band offset, and the potential of room-temperature operation. ISBT properties are systematically studied for devices with different structures parameters.

In terms of electronic devices, vertical GaN p-n diodes and Schottky barrier diodes (SBDs) with high breakdown voltages are homoepitaxially grown on GaN bulk substrates with much reduced defect densities and improved device performance. The advantages of the vertical structure over the lateral structure are multifold: smaller chip area, larger current, less sensitivity to surface states, better scalability, and smaller current dispersion. Three methods are proposed to boost the device performances: thick buffer layer design, hydrogen-plasma based edge termination technique, and multiple drift layer design. In addition, newly emerged Ga2O3 and AlN power electronics may outperform GaN devices. Because of the highly anisotropic crystal structure of Ga2O3, anisotropic electrical properties have been observed in Ga2O3 electronics. The first 1-kV-class AlN SBDs are demonstrated on cost-effective sapphire substrates. Several future topics are also proposed including selective-area doping in GaN power devices, vertical AlN power devices, and (Al,Ga,In)2O3 materials and devices.
ContributorsFu, Houqiang (Author) / Zhao, Yuji (Thesis advisor) / Vasileska, Dragica (Committee member) / Goodnick, Stephen (Committee member) / Yu, Hongbin (Committee member) / Wang, Liping (Committee member) / Arizona State University (Publisher)
Created2019
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Description
The detection and segmentation of objects appearing in a natural scene, often referred to as Object Detection, has gained a lot of interest in the computer vision field. Although most existing object detectors aim to detect all the objects in a given scene, it is important to evaluate whether these

The detection and segmentation of objects appearing in a natural scene, often referred to as Object Detection, has gained a lot of interest in the computer vision field. Although most existing object detectors aim to detect all the objects in a given scene, it is important to evaluate whether these methods are capable of detecting the salient objects in the scene when constraining the number of proposals that can be generated due to constraints on timing or computations during execution. Salient objects are objects that tend to be more fixated by human subjects. The detection of salient objects is important in applications such as image collection browsing, image display on small devices, and perceptual compression.

This thesis proposes a novel evaluation framework that analyses the performance of popular existing object proposal generators in detecting the most salient objects. This work also shows that, by incorporating saliency constraints, the number of generated object proposals and thus the computational cost can be decreased significantly for a target true positive detection rate (TPR).

As part of the proposed framework, salient ground-truth masks are generated from the given original ground-truth masks for a given dataset. Given an object detection dataset, this work constructs salient object location ground-truth data, referred to here as salient ground-truth data for short, that only denotes the locations of salient objects. This is obtained by first computing a saliency map for the input image and then using it to assign a saliency score to each object in the image. Objects whose saliency scores are sufficiently high are referred to as salient objects. The detection rates are analyzed for existing object proposal generators with respect to the original ground-truth masks and the generated salient ground-truth masks.

As part of this work, a salient object detection database with salient ground-truth masks was constructed from the PASCAL VOC 2007 dataset. Not only does this dataset aid in analyzing the performance of existing object detectors for salient object detection, but it also helps in the development of new object detection methods and evaluating their performance in terms of successful detection of salient objects.
ContributorsKotamraju, Sai Prajwal (Author) / Karam, Lina J (Thesis advisor) / Yu, Hongbin (Committee member) / Jayasuriya, Suren (Committee member) / Arizona State University (Publisher)
Created2019
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Description
A new type of electronics was envisioned, namely edible electronics. Edible electronics are made by Food and Drug Administration (FDA) certified edible materials which can be eaten and digested by human body. Different from implantable electronics, test or treatment using edible electronics doesn’t require operations and perioperative complications.

This dissertation

A new type of electronics was envisioned, namely edible electronics. Edible electronics are made by Food and Drug Administration (FDA) certified edible materials which can be eaten and digested by human body. Different from implantable electronics, test or treatment using edible electronics doesn’t require operations and perioperative complications.

This dissertation bridges the food industry, material sciences, device fabrication, and biomedical engineering by demonstrating edible supercapacitors and electronic components and devices such as pH sensor.

Edible supercapacitors were fabricated using food materials from grocery store. 5 of them were connected in series to power a snake camera. Tests result showed that the current generated by supercapacitor have the ability to kill bacteria. Next more food, processed food and non-toxic level electronic materials were investigated. A “preferred food kit” was created for component fabrication based on the investigation. Some edible electronic components, such as wires, resistor, inductor, etc., were developed and characterized utilizing the preferred food kit. These components make it possible to fabricate edible electronic/device in the future work. Some edible electronic components were integrated into an edible electronic system/device. Then edible pH sensor was introduced and fabricated. This edible pH sensor can be swallowed and test pH of gastric fluid. PH can be read in a phone within seconds after the pH sensor was swallowed. As a side project, an edible double network gel electrolyte was synthesized for the edible supercapacitor.
ContributorsXu, Wenwen (Author) / Jiang, Hanqing (Thesis advisor) / Dai, Lenore (Committee member) / Green, Matthew (Committee member) / Mu, Bin (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2019
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Description
Skin electronics is one of the most promising applications of stretchable electronics. The versatility of skin electronics can only be guaranteed when it has conformal contact with human skin. While both analytical and numerical solutions for contact between serpentine interconnects and soft substrate remain unreported, the motivation of this thesis

Skin electronics is one of the most promising applications of stretchable electronics. The versatility of skin electronics can only be guaranteed when it has conformal contact with human skin. While both analytical and numerical solutions for contact between serpentine interconnects and soft substrate remain unreported, the motivation of this thesis is to render a novel method to numerically study the conformability of the serpentine interconnects. This thesis explained thoroughly how to conduct finite element analysis for the conformability of skin electronics, including modeling, meshing method and step setup etc.. User-defined elements were implemented to the finite element commercial package ABAQUS for the analysis of conformability. With thorough investigation into the conformability of Fermat’s spiral, it has been found that the kirigami based pattern exhibits high conformability. Since thickness is a key factor to design skin electronics, the thesis also talked about how the change of thickness of the skin electronics impacts on the conformability.
ContributorsFan, Yiling (Author) / Jiang, Hanqing (Thesis advisor) / Hildreth, Owen (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2015
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Description
Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress

Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market. The prevailing issues surrounding SiC MOSFET devices are the low channel mobility, the low quality of the oxide layer and the high interface state density at the SiC/SiO2 interface. Consequently, there is a need for research to be performed in order to have a better understanding of the factors causing the poor SiC/SiO2 interface properties. In this work, we investigated the generation lifetime in SiC materials by using the pulsed metal oxide semiconductor (MOS) capacitor method and measured the interface state density distribution at the SiC/SiO2 interface by using the conductance measurement and the high-low frequency capacitance technique. These measurement techniques have been performed on n-type and p-type SiC MOS capacitors. In the course of our investigation, we observed fast interface states at semiconductor-dielectric interfaces in SiC MOS capacitors that underwent three different interface passivation processes, such states were detected in the nitrided samples but not observed in PSG-passivated samples. This result indicate that the lack of fast states at PSG-passivated interface is one of the main reasons for higher channel mobility in PSG MOSFETs. In addition, the effect of mobile ions in the oxide on the response time of interface states has been investigated. In the last chapter we propose additional methods of investigation that can help elucidate the origin of the particular interface states, enabling a more complete understanding of the SiC/SiO2 material system.
ContributorsKao, Wei-Chieh (Author) / Goryll, Michael (Thesis advisor) / Chowdhury, Srabanti (Committee member) / Yu, Hongbin (Committee member) / Marinella, Matthew (Committee member) / Arizona State University (Publisher)
Created2015
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Description
Origami and Kirigami are two traditional art forms in the world. Origami, from

‘ori’ meaning folding, and ‘kami’ meaning paper is the art of paper folding. Kirigami, from ‘kiri’ meaning cutting, is the art of the combination of paper cutting and paper folding. In this dissertation, Origami and kirigami concepts were

Origami and Kirigami are two traditional art forms in the world. Origami, from

‘ori’ meaning folding, and ‘kami’ meaning paper is the art of paper folding. Kirigami, from ‘kiri’ meaning cutting, is the art of the combination of paper cutting and paper folding. In this dissertation, Origami and kirigami concepts were successively utilized in making stretchable lithium ion batteries and three-dimensional (3D) silicon structure which both provide excellent mechanical characteristics.
ContributorsSong, Zeming (Author) / Jiang, Hanqing (Thesis advisor) / Dai, Lenore (Committee member) / Yu, Hongbin (Committee member) / He, Ximin (Committee member) / Arizona State University (Publisher)
Created2016