Matching Items (7)
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Description
A low temperature amorphous oxide thin film transistor (TFT) backplane technology for flexible organic light emitting diode (OLED) displays has been developed to create 4.1-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide

A low temperature amorphous oxide thin film transistor (TFT) backplane technology for flexible organic light emitting diode (OLED) displays has been developed to create 4.1-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication of white organic light emitting diode (OLED) displays. Mixed oxide semiconductor thin film transistors (TFTs) on flexible plastic substrates typically suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer enables significant improvements in both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment in the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible colorless plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors.
ContributorsMarrs, Michael (Author) / Raupp, Gregory B (Thesis advisor) / Vogt, Bryan D (Thesis advisor) / Allee, David R. (Committee member) / Arizona State University (Publisher)
Created2011
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Description
Temporary bonding-debonding of flexible plastic substrates to rigid carriers may facilitate effective substrate handling by automated tools for manufacture of flexible microelectronics. The primary challenges in implementing practical temporary bond-debond technology originate from the stress that is developed during high temperature processing predominately through thermal-mechanical property mismatches between carrier, adhesive

Temporary bonding-debonding of flexible plastic substrates to rigid carriers may facilitate effective substrate handling by automated tools for manufacture of flexible microelectronics. The primary challenges in implementing practical temporary bond-debond technology originate from the stress that is developed during high temperature processing predominately through thermal-mechanical property mismatches between carrier, adhesive and substrate. These stresses are relaxed through bowing of the bonded system (substrate-adhesive-carrier), which causes wafer handling problems, or through delamination of substrate from rigid carrier. Another challenge inherent to flexible plastic substrates and linked to stress is their dimensional instability, which may manifest itself in irreversible deformation upon heating and cooling cycles. Dimensional stability is critical to ensure precise registration of different layers during photolithography. The global objective of this work is to determine comprehensive experimental characterization and develop underlying fundamental engineering concept that could enable widespread adoption and scale-up of temporary bonding processing protocols for flexible microelectronics manufacturing. A series of carriers with different coefficient of thermal expansion (CTE), modulus and thickness were investigated to correlate the thermo-mechanical properties of carrier with deformation behavior of bonded systems. The observed magnitude of system bow scaled with properties of carriers according to well-established Stoney's equation. In addition, rheology of adhesive impacted the deformation of bonded system. In particular, distortion-bowing behavior correlated directly with the relative loss factor of adhesive and flexible plastic substrate. Higher loss factor of adhesive compared to that of substrate allowed the stress to be relaxed with less bow, but led to significantly greater dimensional distortion. Conversely, lower loss factor of adhesive allowed less distortion but led to larger wafer bow. A finite element model using ANSYS was developed to predict the trend in bow-distortion of bonded systems as a function of the viscoelastic properties of adhesive. Inclusion of the viscoelasticity of flexible plastic substrate itself was critical to achieving good agreement between simulation and experiment. Simulation results showed that there is a limited range within which tuning the rheology of adhesive can control the stress-distortion. Therefore, this model can aid in design of new adhesive formulations compatible with different processing requirements of various flexible microelectronics applications.
ContributorsHaq, Jesmin (Author) / Raupp, Gregory B (Thesis advisor) / Vogt, Bryan D (Thesis advisor) / Dai, Lenore (Committee member) / Loy, Douglas (Committee member) / Li, Jian (Committee member) / Arizona State University (Publisher)
Created2011
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Description
A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature

A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors.

Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors.

Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs between low temperature and low stress (less than -70 MPa compressive) and device performance. Devices with a dark current of less than 1.0 pA/mm2 and a quantum efficiency of 68% have been demonstrated. Alternative processing techniques, such as pixelating the PIN diode and using organic photodiodes have also been explored for applications where extreme flexibility is desired.
ContributorsMarrs, Michael (Author) / Raupp, Gregory B (Thesis advisor) / Allee, David R. (Committee member) / Dai, Lenore L (Committee member) / Forzani, Erica S (Committee member) / Bawolek, Edward J (Committee member) / Arizona State University (Publisher)
Created2016
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Description
The rheological properties at liquid-liquid interfaces are important in many industrial processes such as manufacturing foods, pharmaceuticals, cosmetics, and petroleum products. This dissertation focuses on the study of linear viscoelastic properties at liquid-liquid interfaces by tracking the thermal motion of particles confined at the interfaces. The technique of interfacial microrheology

The rheological properties at liquid-liquid interfaces are important in many industrial processes such as manufacturing foods, pharmaceuticals, cosmetics, and petroleum products. This dissertation focuses on the study of linear viscoelastic properties at liquid-liquid interfaces by tracking the thermal motion of particles confined at the interfaces. The technique of interfacial microrheology is first developed using one- and two-particle tracking, respectively. In one-particle interfacial microrheology, the rheological response at the interface is measured from the motion of individual particles. One-particle interfacial microrheology at polydimethylsiloxane (PDMS) oil-water interfaces depends strongly on the surface chemistry of different tracer particles. In contrast, by tracking the correlated motion of particle pairs, two-particle interfacial microrheology significantly minimizes the effects from tracer particle surface chemistry and particle size. Two-particle interfacial microrheology is further applied to study the linear viscoelastic properties of immiscible polymer-polymer interfaces. The interfacial loss and storage moduli at PDMS-polyethylene glycol (PEG) interfaces are measured over a wide frequency range. The zero-shear interfacial viscosity, estimated from the Cross model, falls between the bulk viscosities of two individual polymers. Surprisingly, the interfacial relaxation time is observed to be an order of magnitude larger than that of the PDMS bulk polymers. To explore the fundamental basis of interfacial nanorheology, molecular dynamics (MD) simulations are employed to investigate the nanoparticle dynamics. The diffusion of single nanoparticles in pure water and low-viscosity PDMS oils is reasonably consistent with the prediction by the Stokes-Einstein equation. To demonstrate the potential of nanorheology based on the motion of nanoparticles, the shear moduli and viscosities of the bulk phases and interfaces are calculated from single-nanoparticle tracking. Finally, the competitive influences of nanoparticles and surfactants on other interfacial properties, such as interfacial thickness and interfacial tension are also studied by MD simulations.
ContributorsSong, Yanmei (Author) / Dai, Lenore L (Thesis advisor) / Jiang, Hanqing (Committee member) / Lin, Jerry Y S (Committee member) / Raupp, Gregory B (Committee member) / Sierks, Michael R (Committee member) / Arizona State University (Publisher)
Created2011
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Description
For patients with focal drug-resistant epilepsy, surgical remediation can be a hopeful last resort treatment option, but only if enough clinical signs can point to an epileptogenic tissue region. Subdural grids offer ample cortical surface area coverage to evaluate multiple regions of interest, yet they lack the spatial resolution typical

For patients with focal drug-resistant epilepsy, surgical remediation can be a hopeful last resort treatment option, but only if enough clinical signs can point to an epileptogenic tissue region. Subdural grids offer ample cortical surface area coverage to evaluate multiple regions of interest, yet they lack the spatial resolution typical of penetrating electrodes. Additionally, subthreshold stimulation through subdural grids is a stable source for detecting eloquent cortex surrounding potential epileptic tissue. Researchers have each tried introducing microelectrodes to increase the spatial resolution but ran into connectivity challenges as the desired surface area increased. Meanwhile, clinical hybrid options have shown promise by combining multiple electrode sizes, maintaining surface area coverage with an increased spatial resolution where necessary. However, a benchtop method to quantify spatial resolution or test signal summation, without the complexity of an in vivo study, has not been found in the literature; a subdural grid in gel solution has functioned previously but without a published method. Thus, a novel hybrid electrode array with a telescopic configuration including three electrode geometries, called the M$^3$ array, is proposed to maintain cortical surface area coverage and provide spatial clarity in regions of interest using precision microfabrication techniques. Electrophysiological recording with this array should enhance the clinical signal portfolio without changing how clinicians interface with the broad surface data from macros. Additionally, this would provide a source for simultaneous recording and stimulation from the same location due to the telescopic nature of the design. A novel benchtop test method should remove complexity from in vivo tests while allowing direct comparison of recording capabilities of different cortical surface electrodes. Implementing the proposed M$^3$ electrode array in intracranial monitoring improves the current technology without much compromise, enhancing patient outcomes, reducing risks, and encouraging swift clinical translation.
ContributorsGarich, Jonathan Von (Author) / Blain Christen, Jennifer M (Thesis advisor) / Abbas, James J (Committee member) / Helms Tillery, Stephen I (Committee member) / Muthuswamy, Jitendran (Committee member) / Raupp, Gregory B (Committee member) / Arizona State University (Publisher)
Created2022
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Description
Behavior-driven obesity has become one of the most challenging global epidemics since the 1990s, and is presently associated with the leading causes of death in the U.S. and worldwide, including diabetes, cardiovascular disease, strokes, and some forms of cancer. The use of system identification and control engineering principles in the

Behavior-driven obesity has become one of the most challenging global epidemics since the 1990s, and is presently associated with the leading causes of death in the U.S. and worldwide, including diabetes, cardiovascular disease, strokes, and some forms of cancer. The use of system identification and control engineering principles in the design of novel and perpetually adaptive behavioral health interventions for promoting physical activity and healthy eating has been the central theme in many recent contributions. However, the absence of experimental studies specifically designed with the purpose of developing control-oriented behavioral models has restricted prior efforts in this domain to the use of hypothetical simulations to demonstrate the potential viability of these interventions. In this dissertation, the use of first-of-a-kind, real-life experimental results to develop dynamic, participant-validated behavioral models essential for the design and evaluation of optimized and adaptive behavioral interventions is examined. Following an intergenerational approach, the first part of this work aims to develop a dynamical systems model of intrauterine fetal growth with the prime goal of predicting infant birth weight, which has been associated with subsequent childhood and adult-onset obesity. The use of longitudinal input-output data from the “Healthy Mom Zone” intervention study has enabled the estimation and validation of this fetoplacental model. The second part establishes a set of data-driven behavioral models founded on Social Cognitive Theory (SCT). The “Just Walk” intervention experiment, developed at Arizona State University using system identification principles, has lent a unique opportunity to estimate and validate both black-box and semiphysical SCT models for predicting physical activity behavior. Further, this dissertation addresses some of the model estimation challenges arising from the limitations of “Just Walk”, including the need for developing nontraditional modeling approaches for short datasets, as well as delivers a new theoretical and algorithmic framework for structured state-space model estimation that can be used in a broader set of application domains. Finally, adaptive closed-loop intervention simulations of participant-validated SCT models from “Just Walk” are presented using a Hybrid Model Predictive Control (HMPC) control law. A simple HMPC controller reconfiguration strategy for designing both single- and multi-phase intervention designs is proposed.
ContributorsFreigoun, Mohammad T (Author) / Raupp, Gregory B (Thesis advisor) / Tsakalis, Konstantinos S (Thesis advisor) / Spanias, Andreas S (Committee member) / Forzani, Erica S (Committee member) / Muhich, Christopher L (Committee member) / Arizona State University (Publisher)
Created2021
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Description

Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring

Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm2 and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

ContributorsMarrs, Michael (Author) / Raupp, Gregory (Author) / Ira A. Fulton Schools of Engineering (Contributor)
Created2016-07-26