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Description
Performance failure due to aging is an increasing concern for RF circuits. While most aging studies are focused on the concept of mean-time-to-failure, for analog circuits, aging results in continuous degradation in performance before it causes catastrophic failures. In this regard, the lifetime of RF/analog circuits, which is defined as

Performance failure due to aging is an increasing concern for RF circuits. While most aging studies are focused on the concept of mean-time-to-failure, for analog circuits, aging results in continuous degradation in performance before it causes catastrophic failures. In this regard, the lifetime of RF/analog circuits, which is defined as the point where at least one specification fails, is not just determined by aging at the device level, but also by the slack in the specifications, process variations, and the stress conditions on the devices. In this dissertation, firstly, a methodology for analyzing the performance degradation of RF circuits caused by aging mechanisms in MOSFET devices at design-time (pre-silicon) is presented. An algorithm to determine reliability hotspots in the circuit is proposed and design-time optimization methods to enhance the lifetime by making the most likely to fail circuit components more reliable is performed. RF circuits are used as test cases to demonstrate that the lifetime can be enhanced using the proposed design-time technique with low area and no performance impact. Secondly, in-field monitoring and recovering technique for the performance of aged RF circuits is discussed. The proposed in-field technique is based on two phases: During the design time, degradation profiles of the aged circuit are obtained through simulations. From these profiles, hotspot identification of aged RF circuits are conducted and the circuit variable that is easy to measure but highly correlated to the performance of the primary circuit is determined for a monitoring purpose. After deployment, an on-chip DC monitor is periodically activated and its results are used to monitor, and if necessary, recover the circuit performances degraded by aging mechanisms. It is also necessary to co-design the monitoring and recovery mechanism along with the primary circuit for minimal performance impact. A low noise amplifier (LNA) and LC-tank oscillators are fabricated for case studies to demonstrate that the lifetime can be enhanced using the proposed monitoring and recovery techniques in the field. Experimental results with fabricated LNA/oscillator chips show the performance degradation from the accelerated stress conditions and this loss can be recovered by the proposed mitigation scheme.
ContributorsChang, Doo Hwang (Author) / Ozev, Sule (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Kitchen, Jennifer (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2017
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Description
A modeling platform for predicting total ionizing dose (TID) and dose rate response of commercial commercial-off-the-shelf (COTS) linear bipolar circuits and technologies is introduced. Tasks associated with the modeling platform involve the development of model to predict the excess current response in a bipolar transistor given inputs of interface (NIT)

A modeling platform for predicting total ionizing dose (TID) and dose rate response of commercial commercial-off-the-shelf (COTS) linear bipolar circuits and technologies is introduced. Tasks associated with the modeling platform involve the development of model to predict the excess current response in a bipolar transistor given inputs of interface (NIT) and oxide defects (NOT) which are caused by ionizing radiation exposure. Existing models that attempt to predict this excess base current response are derived and discussed in detail. An improved model is proposed which modifies the existing model and incorporates the impact of charged interface trap defects on radiation-induced excess base current. The improved accuracy of the new model in predicting excess base current response in lateral PNP (LPNP) is then verified with Technology Computer Aided Design (TCAD) simulations. Finally, experimental data and compared with the improved and existing model calculations.
ContributorsTolleson, Blayne S. (Author) / Barnaby, Hugh J (Thesis advisor) / Gonzalez-Velo, Yago (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2017
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Description
Point of Load (PoL) converters are important components to the power distribution system in computer power supplies as well as automotive, space, nuclear, and medical electronics. These converters often require high output current capability, low form factor, and high conversion ratios (step-down) without sacrificing converter efficiency. This work presents hybrid

Point of Load (PoL) converters are important components to the power distribution system in computer power supplies as well as automotive, space, nuclear, and medical electronics. These converters often require high output current capability, low form factor, and high conversion ratios (step-down) without sacrificing converter efficiency. This work presents hybrid silicon/gallium nitride (CMOS/GaN) power converter architectures as a solution for high-current, small form-factor PoL converters. The presented topologies use discrete GaN power devices and CMOS integrated drivers and controller loop. The presented power converters operate in the tens of MHz range to reduce the form factor by reducing the size of the off-chip passive inductor and capacitor. Higher conversion ratio is achieved through a fast control loop and the use of GaN power devices that exhibit low parasitic gate capacitance and minimize pulse swallowing.

This work compares three discrete buck power converter architectures: single-stage, multi-phase with 2 phases, and stacked-interleaved, using components-off-the-shelf (COTS). Each of the implemented power converters achieves over 80% peak efficiency with switching speeds up-to 10MHz for high conversion ratio from 24V input to 5V output and maximum load current of 10A. The performance of the three architectures is compared in open loop and closed loop configurations with respect to efficiency, output voltage ripple, and power stage form factor.

Additionally, this work presents an integrated CMOS gate driver solution in CMOS 0.35um technology. The CMOS integrated circuit (IC) includes the gate driver and the closed loop controller for directly driving a single-stage GaN architecture. The designed IC efficiently drives the GaN devices up to 20MHz switching speeds. The presented controller technique uses voltage mode control with an innovative cascode driver architecture to allow a 3.3V CMOS devices to effectively drive GaN devices that require 5V gate signal swing. Furthermore, the designed power converter is expected to operate under 400MRad of total dose, thus enabling its use in high-radiation environments for the large hadron collider at CERN and nuclear facilities.
ContributorsHegde, Ashwath (Author) / Kitchen, Jennifer (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2018
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Description
In this work, an advanced simulation study of reliability in millimeter-wave (mm-wave) GaN Devices for power amplifier (PA) applications is performed by means of a particle-based full band Cellular Monte Carlo device simulator (CMC). The goal of the study is to obtain a systematic characterization of the performance of GaN

In this work, an advanced simulation study of reliability in millimeter-wave (mm-wave) GaN Devices for power amplifier (PA) applications is performed by means of a particle-based full band Cellular Monte Carlo device simulator (CMC). The goal of the study is to obtain a systematic characterization of the performance of GaN devices operating in DC, small signal AC and large-signal radio-frequency (RF) conditions emphasizing on the microscopic properties that correlate to degradation of device performance such as generation of hot carriers, presence of material defects and self-heating effects. First, a review of concepts concerning GaN technology, devices, reliability mechanisms and PA design is presented in chapter 2. Then, in chapter 3 a study of non-idealities of AlGaN/GaN heterojunction diodes is performed, demonstrating that mole fraction variations and the presence of unintentional Schottky contacts are the main limiting factor for high current drive of the devices under study. Chapter 4 consists in a study of hot electron generation in GaN HEMTs, in terms of the accurate simulation of the electron energy distribution function (EDF) obtained under DC and RF operation, taking into account frequency and temperature variations. The calculated EDFs suggest that Class AB PAs operating at low frequency (10 GHz) are more robust to hot carrier effects than when operating under DC or high frequency RF (up to 40 GHz). Also, operation under Class A yields higher EDFs than Class AB indicating lower reliability. This study is followed in chapter 5 by the proposal of a novel π-Shaped gate contact for GaN HEMTs which effectively reduces the hot electron generation while preserving device performance. Finally, in chapter 6 the electro-thermal characterization of GaN-on-Si HEMTs is performed by means of an expanded CMC framework, where charge and heat transport are self-consistently coupled. After the electro-thermal model is validated to experimental data, the assessment of self-heating under lateral scaling is considered.
ContributorsLatorre Rey, Alvaro Daniel (Author) / Saraniti, Marco (Thesis advisor) / Kitchen, Jennifer (Committee member) / Goodnick, Stephen M (Committee member) / Thornton, Trevor (Committee member) / Arizona State University (Publisher)
Created2018
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Description
The increase in computing power has simultaneously increased the demand for input/output (I/O) bandwidth. Unfortunately, the speed of I/O and memory interconnects have not kept pace. Thus, processor-based systems are I/O and interconnect limited. The memory aggregated bandwidth is not scaling fast enough to keep up with increasing bandwidth demands.

The increase in computing power has simultaneously increased the demand for input/output (I/O) bandwidth. Unfortunately, the speed of I/O and memory interconnects have not kept pace. Thus, processor-based systems are I/O and interconnect limited. The memory aggregated bandwidth is not scaling fast enough to keep up with increasing bandwidth demands. The term "memory wall" has been coined to describe this phenomenon.

A new memory bus concept that has the potential to push double data rate (DDR) memory speed to 30 Gbit/s is presented. We propose to map the conventional DDR bus to a microwave link using a multicarrier frequency division multiplexing scheme. The memory bus is formed using a microwave signal carried within a waveguide. We call this approach multicarrier memory channel architecture (MCMCA). In MCMCA, each memory signal is modulated onto an RF carrier using 64-QAM format or higher. The carriers are then routed using substrate integrated waveguide (SIW) interconnects. At the receiver, the memory signals are demodulated and then delivered to SDRAM devices. We pioneered the usage of SIW as memory channel interconnects and demonstrated that it alleviates the memory bandwidth bottleneck. We demonstrated SIW performance superiority over conventional transmission line in immunity to cross-talk and electromagnetic interference. We developed a methodology based on design of experiment (DOE) and response surface method techniques that optimizes the design of SIW interconnects and minimizes its performance fluctuations under material and manufacturing variations. Along with using SIW, we implemented a multicarrier architecture which enabled the aggregated DDR bandwidth to reach 30 Gbit/s. We developed an end-to-end system model in Simulink and demonstrated the MCMCA performance for ultra-high throughput memory channel.

Experimental characterization of the new channel shows that by using judicious frequency division multiplexing, as few as one SIW interconnect is sufficient to transmit the 64 DDR bits. Overall aggregated bus data rate achieves 240 GBytes/s data transfer with EVM not exceeding 2.26% and phase error of 1.07 degree or less.
ContributorsBensalem, Brahim (Author) / Aberle, James T. (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Tirkas, Panayiotis A. (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2018
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Description
The increased adoption of Internet-of-Things (IoT) for various applications like smart home, industrial automation, connected vehicles, medical instrumentation, etc. has resulted in a large scale distributed network of sensors, accompanied by their power supply regulator modules, control and data transfer circuitry. Depending on the application, the sensor location can be

The increased adoption of Internet-of-Things (IoT) for various applications like smart home, industrial automation, connected vehicles, medical instrumentation, etc. has resulted in a large scale distributed network of sensors, accompanied by their power supply regulator modules, control and data transfer circuitry. Depending on the application, the sensor location can be virtually anywhere and therefore they are typically powered by a localized battery. To ensure long battery-life without replacement, the power consumption of the sensor nodes, the supply regulator and, control and data transmission unit, needs to be very low. Reduction in power consumption in the sensor, control and data transmission is typically done by duty-cycled operation such that they are on periodically only for short bursts of time or turn on only based on a trigger event and are otherwise powered down. These approaches reduce their power consumption significantly and therefore the overall system power is dominated by the consumption in the always-on supply regulator.

Besides having low power consumption, supply regulators for such IoT systems also need to have fast transient response to load current changes during a duty-cycled operation. Supply regulation using low quiescent current low dropout (LDO) regulators helps in extending the battery life of such power aware always-on applications with very long standby time. To serve as a supply regulator for such applications, a 1.24 µA quiescent current NMOS low dropout (LDO) is presented in this dissertation. This LDO uses a hybrid bias current generator (HBCG) to boost its bias current and improve the transient response. A scalable bias-current error amplifier with an on-demand buffer drives the NMOS pass device. The error amplifier is powered with an integrated dynamic frequency charge pump to ensure low dropout voltage. A low-power relaxation oscillator (LPRO) generates the charge pump clocks. Switched-capacitor pole tracking (SCPT) compensation scheme is proposed to ensure stability up to maximum load current of 150 mA for a low-ESR output capacitor range of 1 - 47µF. Designed in a 0.25 µm CMOS process, the LDO has an output voltage range of 1V – 3V, a dropout voltage of 240 mV, and a core area of 0.11 mm2.
ContributorsMagod Ramakrishna, Raveesh (Author) / Bakkaloglu, Bertan (Thesis advisor) / Garrity, Douglas (Committee member) / Kitchen, Jennifer (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2018
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Description
This work is concerned with the use of shielded loop antennas to measure

permittivity as a low-cost alternative to expensive probe-based systems for biological

tissues and surrogates. Beginning with the development of a model for simulation, the

shielded loop was characterized. Following the simulations, the shielded loop was tested

in

This work is concerned with the use of shielded loop antennas to measure

permittivity as a low-cost alternative to expensive probe-based systems for biological

tissues and surrogates. Beginning with the development of a model for simulation, the

shielded loop was characterized. Following the simulations, the shielded loop was tested

in free space and while holding a cup of water. The results were then compared. Because

the physical measurements and the simulation results did not line up, simulation results

were forgone. The shielded loop antenna was then used to measure a set of NaCl saline

solutions with varying molarities. This measurement was used as a calibration set, and

the results were analyzed. By taking the peak magnitude of the input impedance of each

solution, a trend was created for the molarities. Following this measurement and analysis,

a set of unknown solutions was tested. Based on the measurements and the empirical

trends from the calibration set of measurements, the molarities of the valid unknown

solutions were estimated. It is shown that using the known molarities, permittivity can

also be calculated. Using the estimated molarities of the unknown solutions, the

permittivity of each solution was calculated. The maximum error for the estimation was

1.07% from the actual data.
ContributorsYiin, Nathan (Author) / Aberle, James T., 1961- (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2018
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Description
There is an increasing demand for fully integrated point-of-load (POL) isolated DC-DC converters that can provide an isolation barrier between the primary and the secondary side, while delivering a low ripple, low noise regulated voltage at their isolated sides to a high dynamic range, sensitive mixed signal devices, such as

There is an increasing demand for fully integrated point-of-load (POL) isolated DC-DC converters that can provide an isolation barrier between the primary and the secondary side, while delivering a low ripple, low noise regulated voltage at their isolated sides to a high dynamic range, sensitive mixed signal devices, such as sensors, current-shunt-monitors and ADCs. For these applications, smaller system size and integration level is important because the whole system may need to fit to limited space. Traditional methods for providing isolated power are discrete solutions using bulky transformers. Miniaturization of isolated POL regulators is becoming highly desirable for low power applications.

A fully integrated, low noise isolated point-of-load DC-DC converter for supply regulation of high dynamic range analog and mixed signal sensor signal-chains is presented. The isolated DC-DC converter utilizes an integrated planar air-core micro-transformer as a coupled resonator and isolation barrier and enables direct connection of low-voltage mixed signal circuits to higher supply rails. The air core transformer is driven at its primary resonant frequency of 100 MHz to achieve maximum power transfer. A mixed-signal perturb-and-observe based frequency search algorithm is developed to improve maximum power transfer efficiency by 60% across the isolation barrier compared to fixed driving frequency method. The isolated converter’s output ripple is reduced by utilizing spread spectrum clocking in the driver. An isolated PMOS LDO in the secondary side is used to suppress switching noise and ripple by 21dB. Conducted and radiated EMI distribution on the IC is measured by a set of integrated ring oscillator based noise sensors with -68dBm noise sensitivity. The proposed isolated converter achieves highest level of integration with respect to earlier reported integrated isolated converters, while providing 50V on-chip junction isolation without the need for extra silicon post-processing steps.
ContributorsLiu, Chengxi (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kiaei, Sayfe (Committee member) / Song, Hongjiang (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2018
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Description
The continuing advancement of modulation standards with newer generations of cellular technology, promises ever increasing data rate and bandwidth efficiency. However, these modulation schemes present high peak to average power ratio (PAPR) even after applying crest factor reduction. Being the most power-hungry component in the radio frequency (RF) transmitter,

The continuing advancement of modulation standards with newer generations of cellular technology, promises ever increasing data rate and bandwidth efficiency. However, these modulation schemes present high peak to average power ratio (PAPR) even after applying crest factor reduction. Being the most power-hungry component in the radio frequency (RF) transmitter, power amplifiers (PA) for infrastructure applications, need to operate efficiently at the presence of these high PAPR signals while maintaining reasonable linearity performance which could be improved by moderate digital pre-distortion (DPD) techniques. This strict requirement of operating efficiently at average power level while being capable of delivering the peak power, made the load modulated PAs such as Doherty PA, Outphasing PA, various Envelope Tracking PAs, Polar transmitters and most recently the load modulated balanced PA, the prime candidates for such application. However, due to its simpler architecture and ability to deliver RF power efficiently with good linearity performance has made Doherty PA (DPA) the most popular solution and has been deployed almost exclusively for wireless infrastructure application all over the world.

Although DPAs has been very successful at amplifying the high PAPR signals, most recent advancements in cellular technology has opted for higher PAPR based signals at wider bandwidth. This lead to increased research and development work to innovate advanced Doherty architectures which are more efficient at back-off (BO) power levels compared to traditional DPAs. In this dissertation, three such advanced Doherty architectures and/or techniques are proposed to achieve high efficiency at further BO power level compared to traditional architecture using symmetrical devices for carrier and peaking PAs. Gallium Nitride (GaN) based high-electron-mobility (HEMT) technology has been used to design and fabricate the DPAs to validate the proposed advanced techniques for higher efficiency with good linearity performance at BO power levels.
ContributorsRuhul Hasin, Muhammad (Author) / Kitchen, Jennifer (Thesis advisor) / Aberle, James T., 1961- (Committee member) / Bakkaloglu, Bertan (Committee member) / Kiaei, Sayfe (Committee member) / Arizona State University (Publisher)
Created2018
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Description
This work covers the design and implementation of a Parallel Doherty RF Power Amplifier in a GaN HEMT process for medium power macro-cell (16W) base station applications. This work improves the key parameters of a Doherty Power Amplifier including the peak and back-off efficiency, operational instantaneous bandwidth and output power

This work covers the design and implementation of a Parallel Doherty RF Power Amplifier in a GaN HEMT process for medium power macro-cell (16W) base station applications. This work improves the key parameters of a Doherty Power Amplifier including the peak and back-off efficiency, operational instantaneous bandwidth and output power by proposing a Parallel Doherty amplifier architecture.

As there is a progression in the wireless communication systems from the first generation to the future 5G systems, there is ever increasing demand for higher data rates which means signals with higher peak-to-average power ratios (PAPR). The present modulation schemes require PAPRs close to 8-10dB. So, there is an urgent need to develop energy efficient power amplifiers that can transmit these high data rate signals.

The Doherty Power Amplifier (DPA) is the most common PA architecture in the cellular infrastructure, as it achieves reasonably high back-off power levels with good efficiency. This work advances the DPA architecture by proposing a Parallel Doherty Power Amplifier to broaden the PAs instantaneous bandwidth, designed with frequency range of operation for 2.45 – 2.70 GHz to support WiMAX applications and future broadband signals.
ContributorsBHARDWAJ, SUMIT (Author) / Kitchen, Jennifer (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2018