Matching Items (39)
Description
As crystalline silicon solar cells continue to get thinner, the recombination of carriers at the surfaces of the cell plays an ever-important role in controlling the cell efficiency. One tool to minimize surface recombination is field effect passivation from the charges present in the thin films applied on the cell surfaces. The focus of this work is to understand the properties of charges present in the SiNx films and then to develop a mechanism to manipulate the polarity of charges to either negative or positive based on the end-application. Specific silicon-nitrogen dangling bonds (·Si-N), known as K center defects, are the primary charge trapping defects present in the SiNx films. A custom built corona charging tool was used to externally inject positive or negative charges in the SiNx film. Detailed Capacitance-Voltage (C-V) measurements taken on corona charged SiNx samples confirmed the presence of a net positive or negative charge density, as high as +/- 8 x 1012 cm-2, present in the SiNx film. High-energy (~ 4.9 eV) UV radiation was used to control and neutralize the charges in the SiNx films. Electron-Spin-Resonance (ESR) technique was used to detect and quantify the density of neutral K0 defects that are paramagnetically active. The density of the neutral K0 defects increased after UV treatment and decreased after high temperature annealing and charging treatments. Etch-back C-V measurements on SiNx films showed that the K centers are spread throughout the bulk of the SiNx film and not just near the SiNx-Si interface. It was also shown that the negative injected charges in the SiNx film were stable and present even after 1 year under indoor room-temperature conditions. Lastly, a stack of SiO2/SiNx dielectric layers applicable to standard commercial solar cells was developed using a low temperature (< 400 °C) PECVD process. Excellent surface passivation on FZ and CZ Si substrates for both n- and p-type samples was achieved by manipulating and controlling the charge in SiNx films.
ContributorsSharma, Vivek (Author) / Bowden, Stuart (Thesis advisor) / Schroder, Dieter (Committee member) / Honsberg, Christiana (Committee member) / Roedel, Ronald (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2013
Description
Possible selves researchers have uncovered many issues associated with the current possible selves measures. For instance, one of the most famous possible selves measures, Oyserman (2004)'s open-ended possible selves, has proven to be difficult to score reliably and also involves laborious scoring procedures. Therefore, this study was initiated to develop a close-ended measure, called the Persistent Academic Possible Selves Scale for Adolescents (PAPSS), that meets these challenges. The PAPSS integrates possible selves theories (personal and social identities) and educational psychology (self-regulation in social cognitive theory). Four hundred and ninety five junior high and high school students participated in the validation study of the PAPSS. I conducted confirmatory factor analyses (CFA) to compare fit for a baseline model to the hypothesized models using Mplus version 7 (Muthén & Muthén, 2012). A weighted least square means and a variance adjusted (WLSMV) estimation method was used for handling multivariate nonnormality of ordered categorical data. The final PAPSS has validity evidence based on the internal structure. The factor structure is composed of three goal-driven factors, one self-regulated factor that focuses on peers, and four self-regulated factors that emphasize the self. Oyserman (2004)'s open-ended questionnaire was used for exploring the evidence of convergent validity. Many issues regarding Oyserman (2003)'s instructions were found during the coding process of academic plausibility. It was complicated to detect hidden academic possible selves and strategies from non-academic possible selves and strategies. Also, interpersonal related strategies were over weighted in the scoring process compared to interpersonal related academic possible selves. The study results uncovered that all of the academic goal-related factors in the PAPSS are significantly related to academic plausibility in a positive direction. However, self-regulated factors in the PAPSS are not. The correlation results between the self-regulated factors and academic plausibility do not provide the evidence of convergent validity. Theoretical and methodological explanations for the test results are discussed.
ContributorsLee, Ji Eun (Author) / Husman, Jenefer (Thesis advisor) / Green, Samuel (Committee member) / Millsap, Roger (Committee member) / Brem, Sarah (Committee member) / Arizona State University (Publisher)
Created2013
Description
Science, Technology, Engineering & Mathematics (STEM) careers have been touted as critical to the success of our nation and also provide important opportunities for access and equity of underrepresented minorities (URM's). Community colleges serve a diverse population and a large number of undergraduates currently enrolled in college, they are well situated to help address the increasing STEM workforce demands. Geoscience is a discipline that draws great interest, but has very low representation of URM's as majors. What factors influence a student's decision to major in the geosciences and are community college students different from research universities in what factors influence these decisions? Through a survey-design mixed with classroom observations, structural equation model was employed to predict a student's intent to persist in introductory geology based on student expectancy for success in their geology class, math self-concept, and interest in the content. A measure of classroom pedagogy was also used to determine if instructor played a role in predicting student intent to persist. The targeted population was introductory geology students participating in the Geoscience Affective Research NETwork (GARNET) project, a national sampling of students in enrolled in introductory geology courses. Results from SEM analysis indicated that interest was the primary predictor in a students intent to persist in the geosciences for both community college and research university students. In addition, self-efficacy appeared to be mediated by interest within these models. Classroom pedagogy impacted how much interest was needed to predict intent to persist, in which as classrooms became more student centered, less interest was required to predict intent to persist. Lastly, math self-concept did not predict student intent to persist in the geosciences, however, it did share variance with self-efficacy and control of learning beliefs, indicating it may play a moderating effect on student interest and self-efficacy. Implications of this work are that while community college students and research university students are different in demographics and content preparation, student-centered instruction continues to be the best way to support student's interest in the sciences. Future work includes examining how math self-concept may play a role in longitudinal persistence in the geosciences.
ContributorsKraft, Katrien J. van der Hoeven (Author) / Husman, Jenefer (Thesis advisor) / Semken, Steven (Thesis advisor) / Baker, Dale R. (Committee member) / McConnell, David (Committee member) / Arizona State University (Publisher)
Created2014
Description
The semiconductor field of Photovoltaics (PV) has experienced tremendous growth, requiring curricula to consider ways to promote student success. One major barrier to success students may face when learning PV is the development of misconceptions. The purpose of this work was to determine the presence and prevalence of misconceptions students may have for three PV semiconductor phenomena; Diffusion, Drift and Excitation. These phenomena are emergent, a class of phenomena that have certain characteristics. In emergent phenomena, the individual entities in the phenomena interact and aggregate to form a self-organizing pattern that can be observed at a higher level. Learners develop a different type of misconception for these phenomena, an emergent misconception. Participants (N=41) completed a written protocol. The pilot study utilized half of these protocols (n = 20) to determine the presence of both general and emergent misconceptions for the three phenomena. Once the presence of both general and emergent misconceptions was confirmed, all protocols (N=41) were analyzed to determine the presence and prevalence of general and emergent misconceptions, and to note any relationships among these misconceptions (full study). Through written protocol analysis of participants' responses, numerous codes emerged from the data for both general and emergent misconceptions. General and emergent misconceptions were found in 80% and 55% of participants' responses, respectively. General misconceptions indicated limited understandings of chemical bonding, electricity and magnetism, energy, and the nature of science. Participants also described the phenomena using teleological, predictable, and causal traits, indicating participants had misconceptions regarding the emergent aspects of the phenomena. For both general and emergent misconceptions, relationships were observed between similar misconceptions within and across the three phenomena, and differences in misconceptions were observed across the phenomena. Overall, the presence and prevalence of both general and emergent misconceptions indicates that learners have limited understandings of the physical and emergent mechanisms for the phenomena. Even though additional work is required, the identification of specific misconceptions can be utilized to enhance semiconductor and PV course content. Specifically, changes can be made to curriculum in order to limit the formation of misconceptions as well as promote conceptual change.
ContributorsNelson, Katherine G (Author) / Brem, Sarah K. (Thesis advisor) / Mckenna, Ann F (Thesis advisor) / Hilpert, Jonathan (Committee member) / Honsberg, Christiana (Committee member) / Husman, Jenefer (Committee member) / Arizona State University (Publisher)
Created2014
Description
GaAs-based solar cells have attracted much interest because of their high conversion efficiencies of ~28% under one sun illumination. The main carrier recombination mechanisms in the GaAs-based solar cells are surface recombination, radiative recombination and non-radiative recombination. Photon recycling reduces the effect of radiative recombination and is an approach to obtain the device performance described by detailed balance theory. The photon recycling model has been developed and was applied to investigate the loss mechanisms in the state-of-the-art GaAs-based solar cell structures using PC1D software. A standard fabrication process of the GaAs-based solar cells is as follows: wafer preparation, individual cell isolation by mesa, n- and p-type metallization, rapid thermal annealing (RTA), cap layer etching, and anti-reflection coating (ARC). The growth rate for GaAs-based materials is one of critical factors to determine the cost for the growth of GaAs-based solar cells. The cost for fabricating GaAs-based solar cells can be reduced if the growth rate is increased without degrading the crystalline quality. The solar cell wafers grown at different growth rates of 14 μm/hour and 55 μm/hour were discussed in this work. The structural properties of the wafers were characterized by X-ray diffraction (XRD) to identify the crystalline quality, and then the as-grown wafers were fabricated into solar cell devices under the same process conditions. The optical and electrical properties such as surface reflection, external quantum efficiency (EQE), dark I-V, Suns-Voc, and illuminated I-V under one sun using a solar simulator were measured to compare the performances of the solar cells with different growth rates. Some simulations in PC1D have been demonstrated to investigate the reasons of the different device performances between fast growth and slow growth structures. A further analysis of the minority carrier lifetime is needed to investigate into the difference in device performances.
ContributorsZhang, Chaomin (Author) / Honsberg, Christiana (Thesis advisor) / Goodnick, Stephen (Committee member) / Faleev, Nikolai (Committee member) / Arizona State University (Publisher)
Created2014
Description
In the interest of expediting future pilot line start-ups for solar cell research, the development of Arizona State University's student-led pilot line at the Solar Power Laboratory is discussed extensively within this work. Several experiments and characterization techniques used to formulate and optimize a series of processes for fabricating diffused-junction, screen-printed silicon solar cells are expounded upon. An experiment is conducted in which the thickness of a PECVD deposited anti-reflection coating (ARC) is varied across several samples and modeled as a function of deposition time. Using this statistical model in tandem with reflectance measurements for each sample, the ARC thickness is optimized to increase light trapping in the solar cells. A response surface model (RSM) experiment is conducted in which 3 process parameters are varied on the PECVD tool for the deposition of the ARCs on several samples. A contactless photoconductance decay (PCD) tool is used to measure the dark saturation currents of these samples. A statistical analysis is performed using JMP in which optimum deposition parameters are found. A separate experiment shows an increase in the passivation quality of the a-SiNx:H ARCs deposited on the solar cells made on the line using these optimum parameters. A RSM experiment is used to optimize the printing process for a particular silver paste in a similar fashion, the results of which are confirmed by analyzing the series resistance of subsequent cells fabricated on the line. An in-depth explanation of a more advanced analysis using JMP and PCD measurements on the passivation quality of 3 aluminum back-surface fields (BSF) is given. From this experiment, a comparison of the means is conducted in order to choose the most effective BSF paste for cells fabricated on the line. An experiment is conducted in parallel which confirms the results via Voc measurements. It is shown that in a period of 11 months, the pilot line went from producing a top cell efficiency of 11.5% to 17.6%. Many of these methods used for the development of this pilot line are equally applicable to other cell structures, and can easily be applied to other solar cell pilot lines.
ContributorsPickett, Guy (Author) / Bowden, Stuart (Thesis advisor) / Honsberg, Christiana (Committee member) / Bertoni, Mariana (Committee member) / Arizona State University (Publisher)
Created2014
Description
Silicon (Si) solar cells are the dominant technology used in the Photovoltaics industry. Field-effect passivation by means of electrostatic charges stored in an overlying insulator on a silicon solar cell has been proven to be a significantly efficient way to reduce effective surface recombination velocity and increase minority carrier lifetime. Silicon nitride (SiNx) films have been extensively used as passivation layers. The capability to store charges makes SiNx a promising material for excellent feild effect passivation. In this work, symmetrical Si/SiO2/SiNx stacks are developed to study the effect of charges in SiNx films. SiO2 films work as barrier layers. Corona charging technique showed the ability to inject charges into the SiNx films in a short time. Minority carrier lifetimes of the Czochralski (CZ) Si wafers increased significantly after either positive or negative charging. A fast and contactless method to characterize the charged overlying insulators on Si wafer through lifetime measurements is proposed and studied in this work, to overcome the drawbacks of capacitance-voltage (CV) measurements such as time consuming, induction of contanmination and hysteresis effect, etc. Analytical simulations showed behaviors of inverse lifetime (Auger corrected) vs. minority carrier density curves depend on insulator charge densities (Nf). From the curve behavior, the Si surface condition and region of Nf can be estimated. When the silicon surface is at high strong inversion or high accumulation, insulator charge density (Nf) or surface recombination velocity parameters (Sn0 and Sp0) can be determined from the slope of inverse lifetime curves, if the other variable is known. If Sn0 and Sp0 are unknown, Nf values of different samples can be compared as long as all have similar Sn0 and Sp0 values. Using the saturation current density (J0) and intercept fit extracted from the lifetime measurement, the bulk lifetime can be calculated. Therefore, this method is feasible and promising for charged insulator characterization.
ContributorsYang, Qun (Author) / Bowden, Stuart (Thesis advisor) / Honsberg, Christiana (Committee member) / Tracy, Clarence (Committee member) / Arizona State University (Publisher)
Created2014
Description
In this thesis, a novel silica nanosphere (SNS) lithography technique has been developed to offer a fast, cost-effective, and large area applicable nano-lithography approach. The SNS can be easily deposited with a simple spin-coating process after introducing a N,N-dimethyl-formamide (DMF) solvent which can produce a highly close packed SNS monolayer over large silicon (Si) surface area, since DMF offers greatly improved wetting, capillary and convective forces in addition to slow solvent evaporation rate. Since the period and dimension of the surface pattern can be conveniently changed and controlled by introducing a desired size of SNS, and additional SNS size reduction with dry etching process, using SNS for lithography provides a highly effective nano-lithography approach for periodically arrayed nano-/micro-scale surface patterns with a desired dimension and period. Various Si nanostructures (i.e., nanopillar, nanotip, inverted pyramid, nanohole) are successfully fabricated with the SNS nano-lithography technique by using different etching technique like anisotropic alkaline solution (i.e., KOH) etching, reactive-ion etching (RIE), and metal-assisted chemical etching (MaCE).
In this research, computational optical modeling is also introduced to design the Si nanostructure, specifically nanopillars (NPs) with a desired period and dimension. The optical properties of Si NP are calculated with two different optical modeling techniques, which are the rigorous coupled wave analysis (RCWA) and finite-difference time-domain (FDTD) methods. By using these two different optical modeling techniques, the optical properties of Si NPs with different periods and dimensions have been investigated to design ideal Si NP which can be potentially used for thin c-Si solar cell applications. From the results of the computational and experimental work, it was observed that low aspect ratio Si NPs fabricated in a periodic hexagonal array can provide highly enhanced light absorption for the target spectral range (600 ~ 1100nm), which is attributed to (1) the effective confinement of resonant scattering within the Si NP and (2) increased high order diffraction of transmitted light providing an extended absorption length. From the research, therefore, it is successfully demonstrated that the nano-fabrication process with SNS lithography can offer enhanced lithographical accuracy to fabricate desired Si nanostructures which can realize enhanced light absorption for thin Si solar cell.
In this research, computational optical modeling is also introduced to design the Si nanostructure, specifically nanopillars (NPs) with a desired period and dimension. The optical properties of Si NP are calculated with two different optical modeling techniques, which are the rigorous coupled wave analysis (RCWA) and finite-difference time-domain (FDTD) methods. By using these two different optical modeling techniques, the optical properties of Si NPs with different periods and dimensions have been investigated to design ideal Si NP which can be potentially used for thin c-Si solar cell applications. From the results of the computational and experimental work, it was observed that low aspect ratio Si NPs fabricated in a periodic hexagonal array can provide highly enhanced light absorption for the target spectral range (600 ~ 1100nm), which is attributed to (1) the effective confinement of resonant scattering within the Si NP and (2) increased high order diffraction of transmitted light providing an extended absorption length. From the research, therefore, it is successfully demonstrated that the nano-fabrication process with SNS lithography can offer enhanced lithographical accuracy to fabricate desired Si nanostructures which can realize enhanced light absorption for thin Si solar cell.
ContributorsChoi, JeaYoung (Author) / Honsberg, Christiana (Thesis advisor) / Alford, Terry (Thesis advisor) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2015
Description
The primary objective of this study was to develop the Perceived Control of the Attribution Process Scale (PCAPS), a measure of metacognitive beliefs of causality, or a perceived control of the attribution process. The PCAPS included two subscales: perceived control of attributions (PCA), and awareness of the motivational consequences of attributions (AMC). Study 1 (a pilot study) generated scale items, explored suitable measurement formats, and provided initial evidence for the validity of an event-specific version of the scale. Study 2 achieved several outcomes; Study 2a provided strong evidence for the validity and reliability of the PCA and AMC subscales, and showed that they represent separate constructs. Study 2b demonstrated the predictive validity of the scale and provided support for the perceived control of the attribution process model. This study revealed that those who adopt these beliefs are significantly more likely to experience autonomy and well-being. Study 2c revealed that these constructs are influenced by context, yet they lead to adaptive outcomes regardless of this contextual-specificity. These findings suggest that there are individual differences in metacognitive beliefs of causality and that these differences have measurable motivational implications.
ContributorsFishman, Evan Jacob (Author) / Nakagawa, Kathryn (Committee member) / Husman, Jenefer (Committee member) / Graham, Steve (Committee member) / Moore, Elsie (Committee member) / Arizona State University (Publisher)
Created2014
Description
A primary motivation of research in photovoltaic technology is to obtain higher efficiency photovoltaic devices at reduced cost of production so that solar electricity can be cost competitive. The majority of photovoltaic technologies are based on p-n junction, with efficiency potential being much lower than the thermodynamic limits of individual technologies and thereby providing substantial scope for further improvements in efficiency. The thesis explores photovoltaic devices using new physical processes that rely on thin layers and are capable of attaining the thermodynamic limit of photovoltaic technology. Silicon heterostructure is one of the candidate technologies in which thin films induce a minority carrier collecting junction in silicon and the devices can achieve efficiency close to the thermodynamic limits of silicon technology. The thesis proposes and experimentally establishes a new theory explaining the operation of silicon heterostructure solar cells. The theory will assist in identifying the optimum properties of thin film materials for silicon heterostructure and help in design and characterization of the devices, along with aiding in developing new devices based on this technology. The efficiency potential of silicon heterostructure is constrained by the thermodynamic limit (31%) of single junction solar cell and is considerably lower than the limit of photovoltaic conversion (~ 80 %). A further improvement in photovoltaic conversion efficiency is possible by implementing a multiple quasi-fermi level system (MQFL). A MQFL allows the absorption of sub band gap photons with current being extracted at a higher band-gap, thereby allowing to overcome the efficiency limit of single junction devices. A MQFL can be realized either by thin epitaxial layers of alternating higher and lower band gap material with nearly lattice matched (quantum well) or highly lattice mismatched (quantum dot) structure. The thesis identifies the material combination for quantum well structure and calculates the absorption coefficient of a MQFl based on quantum well. GaAsSb (barrier)/InAs(dot) was identified as a candidate material for MQFL using quantum dot. The thesis explains the growth mechanism of GaAsSb and the optimization of GaAsSb and GaAs heterointerface.
ContributorsGhosha, Kuṇāla (Author) / Bowden, Stuart (Thesis advisor) / Honsberg, Christiana (Thesis advisor) / Vasileska, Dragica (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2011