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- Creators: Goryll, Michael
- Member of: ASU Electronic Theses and Dissertations
Description
Inductors are fundamental components that do not scale well. Their physical limitations to scalability along with their inherent losses make them the main obstacle in achieving monolithic system-on-chip platform (SoCP). For past decades researchers focused on integrating magnetic materials into on-chip inductors in the quest of achieving high inductance density and quality factor (QF). The state of the art on-chip inductor is made of an enclosed magnetic thin-film around the current carrying wire for maximum flux amplification. Though the integration of magnetic materials results in enhanced inductor characteristics, this approach has its own challenges and limitations especially in power applications. The current-induced magnetic field (HDC) drives the magnetic film into its saturation state. At saturation, inductance and QF drop to that of air-core inductors, eliminating the benefits of integrating magnetic materials. Increasing the current carrying capability without substantially sacrificing benefits brought on by the magnetic material is an open challenge in power applications. Researchers continue to address this challenge along with the continuous improvement in inductance and QF for RF and power applications.
In this work on-chip inductors incorporating magnetic Co-4%Zr-4%Ta -8%B thin films were fabricated and their characteristics were examined under the influence of an externally applied DC magnetic field. It is well established that spins in magnetic materials tend to align themselves in the same direction as the applied field. The resistance of the inductor resulting from the ferromagnetic film can be changed by manipulating the orientation of magnetization. A reduction in resistance should lead to decreases in losses and an enhancement in the QF. The effect of externally applied DC magnetic field along the easy and hard axes was thoroughly investigated. Depending on the strength and orientation of the externally applied field significant improvements in QF response were gained at the expense of a relative reduction in inductance. Characteristics of magnetic-based inductors degrade with current-induced stress. It was found that applying an externally low DC magnetic field across the on-chip inductor prevents the degradation in inductance and QF responses. Examining the effect of DC magnetic field on current carrying capability under low temperature is suggested.
In this work on-chip inductors incorporating magnetic Co-4%Zr-4%Ta -8%B thin films were fabricated and their characteristics were examined under the influence of an externally applied DC magnetic field. It is well established that spins in magnetic materials tend to align themselves in the same direction as the applied field. The resistance of the inductor resulting from the ferromagnetic film can be changed by manipulating the orientation of magnetization. A reduction in resistance should lead to decreases in losses and an enhancement in the QF. The effect of externally applied DC magnetic field along the easy and hard axes was thoroughly investigated. Depending on the strength and orientation of the externally applied field significant improvements in QF response were gained at the expense of a relative reduction in inductance. Characteristics of magnetic-based inductors degrade with current-induced stress. It was found that applying an externally low DC magnetic field across the on-chip inductor prevents the degradation in inductance and QF responses. Examining the effect of DC magnetic field on current carrying capability under low temperature is suggested.
ContributorsKhdour, Mahmoud (Author) / Yu, Hongbin (Thesis advisor) / Pan, George (Committee member) / Goryll, Michael (Committee member) / Bearat, Hamdallah (Committee member) / Arizona State University (Publisher)
Created2014
Description
Semiconductor manufacturing economics necessitate the development of innovative device measurement techniques for quick assessment of products. Several novel electrical measurement techniques will be proposed for screening silicon device parameters. The studied parameters range from oxide reliability, and carrier lifetime in MOS capacitors to the power MOSFET reverse recovery.
It will be shown that positive charge trapping is a dominant process when thick oxides are stressed through the ramped voltage test (RVT). Exploiting the physics behind positive charge generation/trapping at high electric fields, a fast I-V measurement technique is proposed that can be used to effectively distinguish the ultra-thick oxides' intrinsic quality at low electric fields.
Next, two novel techniques will be presented for studying the carrier lifetime in MOS Capacitor devices. It will be shown that the deep-level transient spectroscopy (DLTS) can be applied to MOS test structures as a swift mean for screening the generation lifetime. Recombination lifetime will also be addressed by introducing the optically-excited MOS technique as a promising tool.
The last part of this work is devoted to the reverse recovery behavior of the body diode of power MOSFETs. The correct interpretation of the LDMOS reverse recovery is challenging and requires special attention. A simple approach will be presented to extract meaningful lifetime values from the reverse recovery of LDMOS body-diodes exploiting their gate voltage and the magnitude of the reverse bias.
It will be shown that positive charge trapping is a dominant process when thick oxides are stressed through the ramped voltage test (RVT). Exploiting the physics behind positive charge generation/trapping at high electric fields, a fast I-V measurement technique is proposed that can be used to effectively distinguish the ultra-thick oxides' intrinsic quality at low electric fields.
Next, two novel techniques will be presented for studying the carrier lifetime in MOS Capacitor devices. It will be shown that the deep-level transient spectroscopy (DLTS) can be applied to MOS test structures as a swift mean for screening the generation lifetime. Recombination lifetime will also be addressed by introducing the optically-excited MOS technique as a promising tool.
The last part of this work is devoted to the reverse recovery behavior of the body diode of power MOSFETs. The correct interpretation of the LDMOS reverse recovery is challenging and requires special attention. A simple approach will be presented to extract meaningful lifetime values from the reverse recovery of LDMOS body-diodes exploiting their gate voltage and the magnitude of the reverse bias.
ContributorsElhami Khorasani, Arash (Author) / Alford, Terry L. (Thesis advisor) / Goryll, Michael (Committee member) / Theodore, David (Committee member) / Arizona State University (Publisher)
Created2015
Description
This work explores how flexible electronics and display technology can be applied to develop new biomedical devices for medical, biological, and life science applications. It demonstrates how new biomedical devices can be manufactured by only modifying or personalizing the upper layers of a conventional thin film transistor (TFT) display process. This personalization was applied first to develop and demonstrate the world's largest flexible digital x-ray detector for medical and industrial imaging, and the world's first flexible ISFET pH biosensor using TFT technology. These new, flexible, digital x-ray detectors are more durable than conventional glass substrate x-ray detectors, and also can conform to the surface of the object being imaged. The new flexible ISFET pH biosensors are >10X less expensive to manufacture than comparable CMOS-based ISFETs and provide a sensing area that is orders of magnitude larger than CMOS-based ISFETs. This allows for easier integration with area intensive chemical and biological recognition material as well as allow for a larger number of unique recognition sites for low cost multiple disease and pathogen detection.
The flexible x-ray detector technology was then extended to demonstrate the viability of a new technique to seamlessly combine multiple smaller flexible x-ray detectors into a single very large, ultimately human sized, composite x-ray detector for new medical imaging applications such as single-exposure, low-dose, full-body digital radiography. Also explored, is a new approach to increase the sensitivity of digital x-ray detectors by selectively disabling rows in the active matrix array that are not part of the imaged region. It was then shown how high-resolution, flexible, organic light-emitting diode display (OLED) technology can be used to selectively stimulate and/or silence small groups of neurons on the cortical surface or within the deep brain as a potential new tool to diagnose and treat, as well as understand, neurological diseases and conditions. This work also explored the viability of a new miniaturized high sensitivity fluorescence measurement-based lab-on-a-chip optical biosensor using OLED display and a-Si:H PiN photodiode active matrix array technology for point-of-care diagnosis of multiple disease or pathogen biomarkers in a low cost disposable configuration.
The flexible x-ray detector technology was then extended to demonstrate the viability of a new technique to seamlessly combine multiple smaller flexible x-ray detectors into a single very large, ultimately human sized, composite x-ray detector for new medical imaging applications such as single-exposure, low-dose, full-body digital radiography. Also explored, is a new approach to increase the sensitivity of digital x-ray detectors by selectively disabling rows in the active matrix array that are not part of the imaged region. It was then shown how high-resolution, flexible, organic light-emitting diode display (OLED) technology can be used to selectively stimulate and/or silence small groups of neurons on the cortical surface or within the deep brain as a potential new tool to diagnose and treat, as well as understand, neurological diseases and conditions. This work also explored the viability of a new miniaturized high sensitivity fluorescence measurement-based lab-on-a-chip optical biosensor using OLED display and a-Si:H PiN photodiode active matrix array technology for point-of-care diagnosis of multiple disease or pathogen biomarkers in a low cost disposable configuration.
ContributorsSmith, Joseph T. (Author) / Allee, David (Thesis advisor) / Goryll, Michael (Committee member) / Kozicki, Michael (Committee member) / Blain Christen, Jennifer (Committee member) / Couture, Aaron (Committee member) / Arizona State University (Publisher)
Created2014
Description
This dissertation presents my work on development of deformable electronics using microelectromechanical systems (MEMS) based fabrication technologies. In recent years, deformable electronics are coming to revolutionize the functionality of microelectronics seamlessly with their application environment, ranging from various consumer electronics to bio-medical applications. Many researchers have studied this area, and a wide variety of devices have been fabricated. One traditional way is to directly fabricate electronic devices on flexible substrate through low-temperature processes. These devices suffered from constrained functionality due to the temperature limit. Another transfer printing approach has been developed recently. The general idea is to fabricate functional devices on hard and planar substrates using standard processes then transferred by elastomeric stamps and printed on desired flexible and stretchable substrates. The main disadvantages are that the transfer printing step may limit the yield. The third method is "flexible skins" which silicon substrates are thinned down and structured into islands and sandwiched by two layers of polymer. The main advantage of this method is post CMOS compatible. Based on this technology, we successfully fabricated a 3-D flexible thermal sensor for intravascular flow monitoring. The final product of the 3-D sensor has three independent sensing elements equally distributed around the wall of catheter (1.2 mm in diameter) with 120° spacing. This structure introduces three independent information channels, and cross-comparisons among all readings were utilized to eliminate experimental error and provide better measurement results. The novel fabrication and assembly technology can also be applied to other catheter based biomedical devices. A step forward inspired by the ancient art of folding, origami, which creating three-dimensional (3-D) structures from two-dimensional (2-D) sheets through a high degree of folding along the creases. Based on this idea, we developed a novel method to enable better deformability. One example is origami-enabled silicon solar cells. The solar panel can reach up to 644% areal compactness while maintain reasonable good performance (less than 30% output power density drop) upon 40 times cyclic folding/unfolding. This approach can be readily applied to other functional devices, ranging from sensors, displays, antenna, to energy storage devices.
ContributorsTang, Rui (Author) / Yu, Hongyu (Thesis advisor) / Jiang, Hanqing (Committee member) / Pan, George (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2014
Description
Feature representations for raw data is one of the most important component in a machine learning system. Traditionally, features are \textit{hand crafted} by domain experts which can often be a time consuming process. Furthermore, they do not generalize well to unseen data and novel tasks. Recently, there have been many efforts to generate data-driven representations using clustering and sparse models. This dissertation focuses on building data-driven unsupervised models for analyzing raw data and developing efficient feature representations.
Simultaneous segmentation and feature extraction approaches for silicon-pores sensor data are considered. Aggregating data into a matrix and performing low rank and sparse matrix decompositions with additional smoothness constraints are proposed to solve this problem. Comparison of several variants of the approaches and results for signal de-noising and translocation/trapping event extraction are presented. Algorithms to improve transform-domain features for ion-channel time-series signals based on matrix completion are presented. The improved features achieve better performance in classification tasks and in reducing the false alarm rates when applied to analyte detection.
Developing representations for multimedia is an important and challenging problem with applications ranging from scene recognition, multi-media retrieval and personal life-logging systems to field robot navigation. In this dissertation, we present a new framework for feature extraction for challenging natural environment sounds. Proposed features outperform traditional spectral features on challenging environmental sound datasets. Several algorithms are proposed that perform supervised tasks such as recognition and tag annotation. Ensemble methods are proposed to improve the tag annotation process.
To facilitate the use of large datasets, fast implementations are developed for sparse coding, the key component in our algorithms. Several strategies to speed-up Orthogonal Matching Pursuit algorithm using CUDA kernel on a GPU are proposed. Implementations are also developed for a large scale image retrieval system. Image-based "exact search" and "visually similar search" using the image patch sparse codes are performed. Results demonstrate large speed-up over CPU implementations and good retrieval performance is also achieved.
Simultaneous segmentation and feature extraction approaches for silicon-pores sensor data are considered. Aggregating data into a matrix and performing low rank and sparse matrix decompositions with additional smoothness constraints are proposed to solve this problem. Comparison of several variants of the approaches and results for signal de-noising and translocation/trapping event extraction are presented. Algorithms to improve transform-domain features for ion-channel time-series signals based on matrix completion are presented. The improved features achieve better performance in classification tasks and in reducing the false alarm rates when applied to analyte detection.
Developing representations for multimedia is an important and challenging problem with applications ranging from scene recognition, multi-media retrieval and personal life-logging systems to field robot navigation. In this dissertation, we present a new framework for feature extraction for challenging natural environment sounds. Proposed features outperform traditional spectral features on challenging environmental sound datasets. Several algorithms are proposed that perform supervised tasks such as recognition and tag annotation. Ensemble methods are proposed to improve the tag annotation process.
To facilitate the use of large datasets, fast implementations are developed for sparse coding, the key component in our algorithms. Several strategies to speed-up Orthogonal Matching Pursuit algorithm using CUDA kernel on a GPU are proposed. Implementations are also developed for a large scale image retrieval system. Image-based "exact search" and "visually similar search" using the image patch sparse codes are performed. Results demonstrate large speed-up over CPU implementations and good retrieval performance is also achieved.
ContributorsSattigeri, Prasanna S (Author) / Spanias, Andreas (Thesis advisor) / Thornton, Trevor (Committee member) / Goryll, Michael (Committee member) / Tsakalis, Konstantinos (Committee member) / Arizona State University (Publisher)
Created2014
Description
Hydrogen sulfide (H2S) has been identified as a potential ingredient for grain boundary passivation of multicrystalline silicon. Sulfur is already established as a good surface passivation material for crystalline silicon (c-Si). Sulfur can be used both from solution and hydrogen sulfide gas. For multicrystalline silicon (mc-Si) solar cells, increasing efficiency is a major challenge because passivation of mc-Si wafers is more difficult due to its randomly orientated crystal grains and the principal source of recombination is contributed by the defects in the bulk of the wafer and surface.
In this work, a new technique for grain boundary passivation for multicrystalline silicon using hydrogen sulfide has been developed which is accompanied by a compatible Aluminum oxide (Al2O3) surface passivation. Minority carrier lifetime measurement of the passivated samples has been performed and the analysis shows that success has been achieved in terms of passivation and compared to already existing hydrogen passivation, hydrogen sulfide passivation is actually better. Also the surface passivation by Al2O3 helps to increase the lifetime even more after post-annealing and this helps to attain stability for the bulk passivated samples. Minority carrier lifetime is directly related to the internal quantum efficiency of solar cells. Incorporation of this technique in making mc-Si solar cells is supposed to result in higher efficiency cells. Additional research is required in this field for the use of this technique in commercial solar cells.
In this work, a new technique for grain boundary passivation for multicrystalline silicon using hydrogen sulfide has been developed which is accompanied by a compatible Aluminum oxide (Al2O3) surface passivation. Minority carrier lifetime measurement of the passivated samples has been performed and the analysis shows that success has been achieved in terms of passivation and compared to already existing hydrogen passivation, hydrogen sulfide passivation is actually better. Also the surface passivation by Al2O3 helps to increase the lifetime even more after post-annealing and this helps to attain stability for the bulk passivated samples. Minority carrier lifetime is directly related to the internal quantum efficiency of solar cells. Incorporation of this technique in making mc-Si solar cells is supposed to result in higher efficiency cells. Additional research is required in this field for the use of this technique in commercial solar cells.
ContributorsSaha, Arunodoy, Ph.D (Author) / Tao, Meng (Thesis advisor) / Vasileska, Dragica (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2014
Description
Biogenic silica nanostructures, derived from diatoms, possess highly ordered porous hierarchical nanostructures and afford flexibility in design in large part due to the availability of a great variety of shapes, sizes, and symmetries. These advantages have been exploited for study of transport phenomena of ions and molecules towards the goal of developing ultrasensitive and selective filters and biosensors. Diatom frustules give researchers many inspiration and ideas for the design and production of novel nanostructured materials. In this doctoral research will focus on the following three aspects of biogenic silica: 1) Using diatom frustule as protein sensor. 2) Using diatom nanostructures as template to fabricate nano metal materials. 3) Using diatom nanostructures to fabricate hybrid platform.
Nanoscale confinement biogenetic silica template-based electrical biosensor assay offers the user the ability to detect and quantify the biomolecules. Diatoms have been demonstrated as part of a sensor. The sensor works on the principle of electrochemical impedance spectroscopy. When specific protein biomarkers from a test sample bind to corresponding antibodies conjugated to the surface of the gold surface at the base of each nanowell, a perturbation of electrical double layer occurs resulting in a change in the impedance.
Diatoms are also a new source of inspiration for the design and fabrication of nanostructured materials. Template-directed deposition within cylindrical nanopores of a porous membrane represents an attractive and reproducible approach for preparing metal nanopatterns or nanorods of a variety of aspect ratios. The nanopatterns fabricated from diatom have the potential of the metal-enhanced fluorescence to detect dye-conjugated molecules.
Another approach presents a platform integrating biogenic silica nanostructures with micromachined silicon substrates in a micro
ano hybrid device. In this study, one can take advantages of the unique properties of a marine diatom that exhibits nanopores on the order of 40 nm in diameter and a hierarchical structure. This device can be used to several applications, such as nano particles separation and detection. This platform is also a good substrate to study cell growth that one can observe the reaction of cell growing on the nanostructure of frustule.
Nanoscale confinement biogenetic silica template-based electrical biosensor assay offers the user the ability to detect and quantify the biomolecules. Diatoms have been demonstrated as part of a sensor. The sensor works on the principle of electrochemical impedance spectroscopy. When specific protein biomarkers from a test sample bind to corresponding antibodies conjugated to the surface of the gold surface at the base of each nanowell, a perturbation of electrical double layer occurs resulting in a change in the impedance.
Diatoms are also a new source of inspiration for the design and fabrication of nanostructured materials. Template-directed deposition within cylindrical nanopores of a porous membrane represents an attractive and reproducible approach for preparing metal nanopatterns or nanorods of a variety of aspect ratios. The nanopatterns fabricated from diatom have the potential of the metal-enhanced fluorescence to detect dye-conjugated molecules.
Another approach presents a platform integrating biogenic silica nanostructures with micromachined silicon substrates in a micro
ano hybrid device. In this study, one can take advantages of the unique properties of a marine diatom that exhibits nanopores on the order of 40 nm in diameter and a hierarchical structure. This device can be used to several applications, such as nano particles separation and detection. This platform is also a good substrate to study cell growth that one can observe the reaction of cell growing on the nanostructure of frustule.
ContributorsLin, Kai-Chun (Author) / Ramakrishna, B.L. (Thesis advisor) / Goryll, Michael (Thesis advisor) / Dey, Sandwip (Committee member) / Prasad, Shalini (Committee member) / Arizona State University (Publisher)
Created2014
Description
In very small electronic devices the alternate capture and emission of carriers at an individual defect site located at the interface of Si:SiO2 of a MOSFET generates discrete switching in the device conductance referred to as a random telegraph signal (RTS) or random telegraph noise (RTN). In this research work, the integration of random defects positioned across the channel at the Si:SiO2 interface from source end to the drain end in the presence of different random dopant distributions are used to conduct Ensemble Monte-Carlo ( EMC ) based numerical simulation of key device performance metrics for 45 nm gate length MOSFET device. The two main performance parameters that affect RTS based reliability measurements are percentage change in threshold voltage and percentage change in drain current fluctuation in the saturation region. It has been observed as a result of the simulation that changes in both and values moderately decrease as the defect position is gradually moved from source end to the drain end of the channel. Precise analytical device physics based model needs to be developed to explain and assess the EMC simulation based higher VT fluctuations as experienced for trap positions at the source side. A new analytical model has been developed that simultaneously takes account of dopant number variations in the channel and depletion region underneath and carrier mobility fluctuations resulting from fluctuations in surface potential barriers. Comparisons of this new analytical model along with existing analytical models are shown to correlate with 3D EMC simulation based model for assessment of VT fluctuations percentage induced by a single interface trap. With scaling of devices beyond 32 nm node, halo doping at the source and drain are routinely incorporated to combat the threshold voltage roll-off that takes place with effective channel length reduction. As a final study on this regard, 3D EMC simulation method based computations of threshold voltage fluctuations have been performed for varying source and drain halo pocket length to illustrate the threshold voltage fluctuations related reliability problems that have been aggravated by trap positions near the source at the interface compared to conventional 45 nm MOSFET.
ContributorsAshraf, Nabil Shovon (Author) / Vasileska, Dragica (Thesis advisor) / Schroder, Dieter (Committee member) / Goodnick, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011
Description
There will always be a need for high current/voltage transistors. A transistor that has the ability to be both or either of these things is the silicon metal-silicon field effect transistor (MESFET). An additional perk that silicon MESFET transistors have is the ability to be integrated into the standard silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) process flow. This makes a silicon MESFET transistor a very valuable device for use in any standard CMOS circuit that may usually need a separate integrated circuit (IC) in order to switch power on or from a high current/voltage because it allows this function to be performed with a single chip thereby cutting costs. The ability for the MESFET to cost effectively satisfy the needs of this any many other high current/voltage device application markets is what drives the study of MESFET optimization. Silicon MESFETs that are integrated into standard SOI CMOS processes often receive dopings during fabrication that would not ideally be there in a process made exclusively for MESFETs. Since these remnants of SOI CMOS processing effect the operation of a MESFET device, their effect can be seen in the current-voltage characteristics of a measured MESFET device. Device simulations are done and compared to measured silicon MESFET data in order to deduce the cause and effect of many of these SOI CMOS remnants. MESFET devices can be made in both fully depleted (FD) and partially depleted (PD) SOI CMOS technologies. Device simulations are used to do a comparison of FD and PD MESFETs in order to show the advantages and disadvantages of MESFETs fabricated in different technologies. It is shown that PD MESFET have the highest current per area capability. Since the PD MESFET is shown to have the highest current capability, a layout optimization method to further increase the current per area capability of the PD silicon MESFET is presented, derived, and proven to a first order.
ContributorsSochacki, John (Author) / Thornton, Trevor J (Thesis advisor) / Schroder, Dieter (Committee member) / Vasileska, Dragica (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011
Description
In the last few years, significant advances in nanofabrication have allowed tailoring of structures and materials at a molecular level enabling nanofabrication with precise control of dimensions and organization at molecular length scales, a development leading to significant advances in nanoscale systems. Although, the direction of progress seems to follow the path of microelectronics, the fundamental physics in a nanoscale system changes more rapidly compared to microelectronics, as the size scale is decreased. The changes in length, area, and volume ratios due to reduction in size alter the relative influence of various physical effects determining the overall operation of a system in unexpected ways. One such category of nanofluidic structures demonstrating unique ionic and molecular transport characteristics are nanopores. Nanopores derive their unique transport characteristics from the electrostatic interaction of nanopore surface charge with aqueous ionic solutions. In this doctoral research cylindrical nanopores, in single and array configuration, were fabricated in silicon-on-insulator (SOI) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE). The fabrication method presented is compatible with standard semiconductor foundries and allows fabrication of nanopores with desired geometries and precise dimensional control, providing near ideal and isolated physical modeling systems to study ion transport at the nanometer level. Ion transport through nanopores was characterized by measuring ionic conductances of arrays of nanopores of various diameters for a wide range of concentration of aqueous hydrochloric acid (HCl) ionic solutions. Measured ionic conductances demonstrated two distinct regimes based on surface charge interactions at low ionic concentrations and nanopore geometry at high ionic concentrations. Field effect modulation of ion transport through nanopore arrays, in a fashion similar to semiconductor transistors, was also studied. Using ionic conductance measurements, it was shown that the concentration of ions in the nanopore volume was significantly changed when a gate voltage on nanopore arrays was applied, hence controlling their transport. Based on the ion transport results, single nanopores were used to demonstrate their application as nanoscale particle counters by using polystyrene nanobeads, monodispersed in aqueous HCl solutions of different molarities. Effects of field effect modulation on particle transition events were also demonstrated.
ContributorsJoshi, Punarvasu (Author) / Thornton, Trevor J (Thesis advisor) / Goryll, Michael (Thesis advisor) / Spanias, Andreas (Committee member) / Saraniti, Marco (Committee member) / Arizona State University (Publisher)
Created2011