In recent years, a substantial amount of research has been focused on identifying suitable interfacial layers in organic light-emitting diodes and organic solar cells which has efficient charge transport properties. In this work, a very thin layer of AgOx is deposited on top of the ITO layer along with PEDOT:PSS and is observed that the solar cells having the AgOx interfacial layer showed a 28% increase in power conversion efficiency in comparison to that of the control cell. The enhancement in efficiency has been ascribed to improvements in fill factor as well as the increase in shunt resistance and decrease in the series resistance of the solar cells. An equivalent circuit model is also provided to understand the changes in the series and shunt resistances in the AgOx modified devices.

Silver doped cupric oxide thin films are prepared on polyethylene naphthalate (flexible polymer) substrates. Thin films Ag-doped CuO are deposited on the substrate by co-sputtering followed by microwave assisted oxidation of the metal films. The low temperature tolerance of the polymer substrates led to the search for innovative low temperature processing techniques. Cupric oxide is a p-type semiconductor with an indirect band gap and is used as selective absorption layer solar cells. X-ray diffraction identifies the CuO phases. Rutherford backscattering spectrometry measurements confirm the stoichiometry of each copper oxide formed. The surface morphology is determined by atomic force microscopy. The microstructural properties such as crystallite size and the microstrain for (−111) and (111) planes are calculated and discussed. Incorporation of Ag led to the lowering of band gap in CuO. Consequently, it is determined that Ag addition has a strong effect on the structural, morphological, surface, and optical properties of CuO grown on flexible substrates by microwave annealing. Tauc's plot is used to determine the optical band gap of CuO and Ag doped CuO films. The values of the indirect and direct band gap for CuO are found to be 2.02 eV and 3.19 eV, respectively.