Matching Items (981)
Towards high-efficiency thin-film solar cells: from theoretical analysis to experimental exploration
Description
GaAs single-junction solar cells have been studied extensively in recent years, and have reached over 28 % efficiency. Further improvement requires an optically thick but physically thin absorber to provide both large short-circuit current and high open-circuit voltage. By detailed simulation, it is concluded that ultra-thin GaAs cells with hundreds of nanometers thickness and reflective back scattering can potentially offer efficiencies greater than 30 %. The 300 nm GaAs solar cell with AlInP/Au reflective back scattering is carefully designed and demonstrates an efficiency of 19.1 %. The device performance is analyzed using the semi-analytical model with Phong distribution implemented to account for non-Lambertian scattering. A Phong exponent m of ~12, a non-radiative lifetime of 130 ns, and a specific series resistivity of 1.2 Ω·cm2 are determined.
Thin-film CdTe solar cells have also attracted lots of attention due to the continuous improvements in their device performance. To address the issue of the lower efficiency record compared to detailed-balance limit, the single-crystalline Cd(Zn)Te/MgCdTe double heterostructures (DH) grown on InSb (100) substrates by molecular beam epitaxy (MBE) are carefully studied. The Cd0.9946Zn0.0054Te alloy lattice-matched to InSb has been demonstrated with a carrier lifetime of 0.34 µs observed in a 3 µm thick Cd0.9946Zn0.0054Te/MgCdTe DH sample. The substantial improvement of lifetime is due to the reduction in misfit dislocation density. The recombination lifetime and interface recombination velocity (IRV) of CdTe/MgxCd1-xTe DHs are investigated. The IRV is found to be dependent on both the MgCdTe barrier height and width due to the thermionic emission and tunneling processes. A record-long carrier lifetime of 2.7 µs and a record-low IRV of close to zero have been confirmed experimentally.
The MgCdTe/Si tandem solar cell is proposed to address the issue of high manufacturing costs and poor performance of thin-film solar cells. The MBE grown MgxCd1-xTe/MgyCd1-yTe DHs have demonstrated the required bandgap energy of 1.7 eV, a carrier lifetime of 11 ns, and an effective IRV of (1.869 ± 0.007) × 103 cm/s. The large IRV is attributed to thermionic-emission induced interface recombination. These understandings can be applied to fabricating the high-efficiency low-cost MgCdTe/Si tandem solar cell.
Thin-film CdTe solar cells have also attracted lots of attention due to the continuous improvements in their device performance. To address the issue of the lower efficiency record compared to detailed-balance limit, the single-crystalline Cd(Zn)Te/MgCdTe double heterostructures (DH) grown on InSb (100) substrates by molecular beam epitaxy (MBE) are carefully studied. The Cd0.9946Zn0.0054Te alloy lattice-matched to InSb has been demonstrated with a carrier lifetime of 0.34 µs observed in a 3 µm thick Cd0.9946Zn0.0054Te/MgCdTe DH sample. The substantial improvement of lifetime is due to the reduction in misfit dislocation density. The recombination lifetime and interface recombination velocity (IRV) of CdTe/MgxCd1-xTe DHs are investigated. The IRV is found to be dependent on both the MgCdTe barrier height and width due to the thermionic emission and tunneling processes. A record-long carrier lifetime of 2.7 µs and a record-low IRV of close to zero have been confirmed experimentally.
The MgCdTe/Si tandem solar cell is proposed to address the issue of high manufacturing costs and poor performance of thin-film solar cells. The MBE grown MgxCd1-xTe/MgyCd1-yTe DHs have demonstrated the required bandgap energy of 1.7 eV, a carrier lifetime of 11 ns, and an effective IRV of (1.869 ± 0.007) × 103 cm/s. The large IRV is attributed to thermionic-emission induced interface recombination. These understandings can be applied to fabricating the high-efficiency low-cost MgCdTe/Si tandem solar cell.
ContributorsLiu, Shi (Author) / Zhang, Yong-Hang (Thesis advisor) / Johnson, Shane R (Committee member) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2015
Description
Compound semiconductors tend to be more ionic if the cations and anions are further apart in atomic columns, such as II-VI compared to III-V compounds, due in part to the greater electronegativity difference between group-II and group-VI atoms. As the electronegativity between the atoms increases, the materials tend to have more insulator-like properties, including higher energy band gaps and lower indices of refraction. This enables significant differences in the optical and electronic properties between III-V, II-VI, and IV-VI semiconductors. Many of these binary compounds have similar lattice constants and therefore can be grown epitaxially on top of each other to create monolithic heterovalent and heterocrystalline heterostructures with optical and electronic properties unachievable in conventional isovalent heterostructures.
Due to the difference in vapor pressures and ideal growth temperatures between the different materials, precise growth methods are required to optimize the structural and optical properties of the heterovalent heterostructures. The high growth temperatures of the III-V materials can damage the II-VI barrier layers, and therefore a compromise must be found for the growth of high-quality III-V and II-VI layers in the same heterostructure. In addition, precise control of the interface termination has been shown to play a significant role in the crystal quality of the different layers in the structure. For non-polar orientations, elemental fluxes of group-II and group-V atoms consistently help to lower the stacking fault and dislocation density in the II-VI/III-V heterovalent heterostructures.
This dissertation examines the epitaxial growth of heterovalent and heterocrystalline heterostructures lattice-matched to GaAs, GaSb, and InSb substrates in a single-chamber growth system. The optimal growth conditions to achieve alternating layers of III-V, II-VI, and IV-VI semiconductors have been investigated using temperature ramps, migration-enhanced epitaxy, and elemental fluxes at the interface. GaSb/ZnTe distributed Bragg reflectors grown in this study significantly outperform similar isovalent GaSb-based reflectors and show great promise for mid-infrared applications. Also, carrier confinement in GaAs/ZnSe quantum wells was achieved with a low-temperature growth technique for GaAs on ZnSe. Additionally, nearly lattice-matched heterocrystalline PbTe/CdTe/InSb heterostructures with strong infrared photoluminescence were demonstrated, along with virtual (211) CdZnTe/InSb substrates with extremely low defect densities for long-wavelength optoelectronic applications.
Due to the difference in vapor pressures and ideal growth temperatures between the different materials, precise growth methods are required to optimize the structural and optical properties of the heterovalent heterostructures. The high growth temperatures of the III-V materials can damage the II-VI barrier layers, and therefore a compromise must be found for the growth of high-quality III-V and II-VI layers in the same heterostructure. In addition, precise control of the interface termination has been shown to play a significant role in the crystal quality of the different layers in the structure. For non-polar orientations, elemental fluxes of group-II and group-V atoms consistently help to lower the stacking fault and dislocation density in the II-VI/III-V heterovalent heterostructures.
This dissertation examines the epitaxial growth of heterovalent and heterocrystalline heterostructures lattice-matched to GaAs, GaSb, and InSb substrates in a single-chamber growth system. The optimal growth conditions to achieve alternating layers of III-V, II-VI, and IV-VI semiconductors have been investigated using temperature ramps, migration-enhanced epitaxy, and elemental fluxes at the interface. GaSb/ZnTe distributed Bragg reflectors grown in this study significantly outperform similar isovalent GaSb-based reflectors and show great promise for mid-infrared applications. Also, carrier confinement in GaAs/ZnSe quantum wells was achieved with a low-temperature growth technique for GaAs on ZnSe. Additionally, nearly lattice-matched heterocrystalline PbTe/CdTe/InSb heterostructures with strong infrared photoluminescence were demonstrated, along with virtual (211) CdZnTe/InSb substrates with extremely low defect densities for long-wavelength optoelectronic applications.
ContributorsLassise, Maxwell Brock (Author) / Zhang, Yong-Hang (Thesis advisor) / Smith, David J. (Committee member) / Johnson, Shane R (Committee member) / Mccartney, Martha R (Committee member) / Arizona State University (Publisher)
Created2019
Description
With the new independence of adulthood, college students are a group susceptible to adopting unsupported, if not harmful, health practices. A survey of Arizona State University undergraduate students (N=200) was conducted to evaluate supplement use, trust in information sources, and beliefs about supplement regulation. Of those who reported using supplements, college students most frequently received information from friends and family. STEM majors in fields unrelated to health who were taking a supplement were found to be less likely to receive information about the supplement from a medical practitioner than those in health fields or those in non-STEM majors (-26.9%, p=0.018). STEM majors in health-related fields were 15.0% more likely to treat colds and/or cold symptoms with research-supported methods identified from reliable sources, while non-health STEM and non-STEM majors were more likely to take unsupported cold treatments (p=0.010). Surveyed students, regardless of major, also stated they would trust a medical practitioner for supplement advice above other sources (88.0%), and the majority expressed a belief that dietary supplements are approved/regulated by the government (59.8%).
ContributorsPerez, Jacob Tanner (Author) / Hendrickson, Kirstin (Thesis director) / Lefler, Scott (Committee member) / College of Liberal Arts and Sciences (Contributor) / School of Molecular Sciences (Contributor) / Department of Physics (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05
ContributorsChandler, N. Kayla (Author) / Neisewander, Janet (Thesis director) / Sanabria, Federico (Committee member) / Olive, M. Foster (Committee member) / Barrett, The Honors College (Contributor) / College of Liberal Arts and Sciences (Contributor)
Created2013-05
Description
I propose that norms regulate behaviors that negatively impact an individual's survival and reproduction. But because monitoring and enforcing of norms can be costly, individuals should be selective about which norms they police and under what circumstances they should do so. Two studies tested this idea by experimentally activating fitness-relevant motives and having participants answer questions about the policing of norms. The first study examined a norm prescribing respect for status and another proscribing sexual coercion. Results from Study 1 failed to support the hypotheses; activating a status-seeking motive did not have the predicted effects on policing of the respect-status norm nor did activating a mating motive have the predicted effects on policing of the respect-status norm or anti-coercion norm. Study 2 examined two new norms, one prescribing that people stay home when sick and the other proscribing people from having sex with another person's partners. Study 2 also manipulated whether self or others were the target of the policing. Study 2 failed to provide support; a disease avoidance motive failed to have effects on policing of the stay home when sick norm. Individuals in a relationship under a mating motive wanted less policing of others for violation of the mate poaching norm than those in a baseline condition, opposite of the predicted effects.
ContributorsSmith, M. Kristopher (Author) / Neuberg, L. Steven (Thesis director) / Presson, Clark (Committee member) / Hruschka, J. Daniel (Committee member) / Barrett, The Honors College (Contributor) / College of Liberal Arts and Sciences (Contributor)
Created2013-05
Description
Literature in public administration emphasizes a growing dissatisfaction with government on the part of residents. Where there tends to be a lack in the literature is in terms of solutions to this problem. We would like to argue that the engagement process itself has the power to foster a profound attitudinal shift on the part of both residents and government. This paper explores the structural and cultural barriers to satisfactory public engagement both from literature and a combination of policy analysis, semi-structured interviews and participatory observation within the City of Tempe. We then provide recommendations to the City of Tempe on how to overcome these barriers and effect authentic public engagement practices. With these new suggested practices and mindsets, we provide a way that people can have the power to create their own community.
ContributorsRiffle, Morgan (Co-author) / Tchida, Celina (Co-author) / Ingram-Waters, Mary (Thesis director) / Grzanka, Patrick (Committee member) / King, Cheryl (Committee member) / Barrett, The Honors College (Contributor) / College of Liberal Arts and Sciences (Contributor)
Created2013-05
Description
This thesis examines the relationship between unofficial, official, and parallel Islam in Uzbekistan following the end of the Soviet Union. Key touchstone moments in Uzbekistan during the twentieth-century show the history between unofficial and official Islam and the resulting precedents set for Muslims gathering against the government. This historical analysis shows how President Karimov and the Uzbek government view and approach Islam in the country following independence.
ContributorsTieslink, Evan (Author) / Batalden, Stephen (Thesis director) / Kefeli, Agnes (Committee member) / Saikia, Yasmin (Committee member) / Barrett, The Honors College (Contributor) / College of Liberal Arts and Sciences (Contributor) / School of Politics and Global Studies (Contributor) / School of Historical, Philosophical and Religious Studies (Contributor)
Created2013-05
Description
Through this creative project, I executed a Distracted Driving Awareness Campaign at Arizona State University to raise awareness about the dangers of distracted driving, specifically texting while driving. As an Undergraduate Student Government Senator, my priority is the safety and success of students, both in and out of the classroom. By partnering with State Farm and AT&T, we were able to raise awareness about the dangers of distracted driving and collected over 200 pledges from students to never text and drive.
ContributorsHibbs, Jordan Ashley (Author) / Miller, Clark (Thesis director) / Parmentier, Mary Jane (Committee member) / Barrett, The Honors College (Contributor) / College of Liberal Arts and Sciences (Contributor) / School of Politics and Global Studies (Contributor) / Department of Psychology (Contributor) / Graduate College (Contributor)
Created2014-05
Description
Teen dating violence is a significant problem in the U.S., with approximately 1 out of 3 teens experiencing some form of dating violence. BLOOM is a not-for-profit organization created by Donna Bartos. BLOOM's educators enter high schools in Arizona and present their educational program on dating abuse prevention. BLOOM's primary goal is to educate teens on how to prevent teen dating violence and empower them with the skills leading to healthy relationships. After participants complete their educational program, a feedback card is filled out with an open-response section. This project focused on the open response section to analyze feedback cards through a process of code development, coding, and tallying. Information provided by this project could assist BLOOM in re-evaluating their curriculum, appealing to future investors, and growing their program to reach more students. With a coding system in place, BLOOM will also be able to better assess the impact they have on the participants of their program.
ContributorsHarmon, Ashley Nicole (Author) / Bodman, Denise (Thesis director) / Dumka, Larry (Committee member) / T. Denny Sanford School of Social and Family Dynamics (Contributor) / College of Liberal Arts and Sciences (Contributor) / Barrett, The Honors College (Contributor)
Created2016-05
Description
High-performance III-V semiconductors based on ternary alloys and superlattice systems are fabricated, studied, and compared for infrared optoelectronic applications. InAsBi is a ternary alloy near the GaSb lattice constant that is not as thoroughly investigated as other III-V alloys and that is challenging to produce as Bi has a tendency to surface segregate and form droplets during growth rather than incorporate. A growth window is identified within which high-quality droplet-free bulk InAsBi is produced and Bi mole fractions up to 6.4% are obtained. Photoluminescence with high internal quantum efficiency is observed from InAs/InAsBi quantum wells. The high structural and optical quality of the InAsBi materials examined demonstrates that bulk, quantum well, and superlattice structures utilizing InAsBi are an important design option for efficient infrared coverage.
Another important infrared material system is InAsSb and the strain-balanced InAs/InAsSb superlattice on GaSb. Detailed examination of X-ray diffraction, photoluminescence, and spectroscopic ellipsometry data provides the temperature and composition dependent bandgap of bulk InAsSb. The unintentional incorporation of approximately 1% Sb into the InAs layers of the superlattice is measured and found to significantly impact the analysis of the InAs/InAsSb band alignment. In the analysis of the absorption spectra, the ground state absorption coefficient and transition strength of the superlattice are proportional to the square of the electron-hole wavefunction overlap; wavefunction overlap is therefore a major design parameter in terms of optimizing absorption in these materials. Furthermore in addition to improvements through design optimization, the optical quality of the materials studied is found to be positively enhanced with the use of Bi as a surfactant during molecular beam epitaxy growth.
A software tool is developed that calculates and optimizes the miniband structure of semiconductor superlattices, including bismide-based designs. The software has the capability to limit results to designs that can be produced with high structural and optical quality, and optimized designs in terms of maximizing absorption are identified for several infrared superlattice systems at the GaSb lattice constant. The accuracy of the software predictions are tested with the design and growth of an optimized mid-wave infrared InAs/InAsSb superlattice which exhibits superior optical and absorption properties.
Another important infrared material system is InAsSb and the strain-balanced InAs/InAsSb superlattice on GaSb. Detailed examination of X-ray diffraction, photoluminescence, and spectroscopic ellipsometry data provides the temperature and composition dependent bandgap of bulk InAsSb. The unintentional incorporation of approximately 1% Sb into the InAs layers of the superlattice is measured and found to significantly impact the analysis of the InAs/InAsSb band alignment. In the analysis of the absorption spectra, the ground state absorption coefficient and transition strength of the superlattice are proportional to the square of the electron-hole wavefunction overlap; wavefunction overlap is therefore a major design parameter in terms of optimizing absorption in these materials. Furthermore in addition to improvements through design optimization, the optical quality of the materials studied is found to be positively enhanced with the use of Bi as a surfactant during molecular beam epitaxy growth.
A software tool is developed that calculates and optimizes the miniband structure of semiconductor superlattices, including bismide-based designs. The software has the capability to limit results to designs that can be produced with high structural and optical quality, and optimized designs in terms of maximizing absorption are identified for several infrared superlattice systems at the GaSb lattice constant. The accuracy of the software predictions are tested with the design and growth of an optimized mid-wave infrared InAs/InAsSb superlattice which exhibits superior optical and absorption properties.
ContributorsWebster, Preston Thomas (Author) / Johnson, Shane R (Thesis advisor) / Zhang, Yong-Hang (Committee member) / Menéndez, Jose (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2016