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- Creators: Chopin, Frédéric, 1810-1849
Description
In this research, our goal was to fabricate Josephson junctions that can be stably processed at 300°C or higher. With the purpose of integrating Josephson junction fabrication with the current semiconductor circuit fabrication process, back-end process temperatures (>350 °C) will be a key for producing large scale junction circuits reliably, which requires the junctions to be more thermally stable than current Nb/Al-AlOx/Nb junctions. Based on thermodynamics, Hf was chosen to produce thermally stable Nb/Hf-HfOx/Nb superconductor tunnel Josephson junctions that can be grown or processed at elevated temperatures. Also elevated synthesis temperatures improve the structural and electrical properties of Nb electrode layers that could potentially improve junction device performance. The refractory nature of Hf, HfO2 and Nb allow for the formation of flat, abrupt and thermally-stable interfaces. But the current Al-based barrier will have problems when using with high-temperature grown and high-quality Nb. So our work is aimed at using Nb grown at elevated temperatures to fabricate thermally stable Josephson tunnel junctions. As a junction barrier metal, Hf was studied and compared with the traditional Al-barrier material. We have proved that Hf-HfOx is a good barrier candidate for high-temperature synthesized Josephson junction. Hf deposited at 500 °C on Nb forms flat and chemically abrupt interfaces. Nb/Hf-HfOx/Nb Josephson junctions were synthesized, fabricated and characterized with different oxidizing conditions. The results of materials characterization and junction electrical measurements are reported and analyzed. We have improved the annealing stability of Nb junctions and also used high-quality Nb grown at 500 °C as the bottom electrode successfully. Adding a buffer layer or multiple oxidation steps improves the annealing stability of Josephson junctions. We also have attempted to use the Atomic Layer Deposition (ALD) method for the growth of Hf oxide as the junction barrier and got tunneling results.
ContributorsHuang, Mengchu, 1987- (Author) / Newman, Nathan (Thesis advisor) / Rowell, John M. (Committee member) / Singh, Rakesh K. (Committee member) / Chamberlin, Ralph (Committee member) / Wang, Robert (Committee member) / Arizona State University (Publisher)
Created2013
Description
Nanostructured materials show signicant enhancement in the thermoelectric g-
ure of merit (zT) due to quantum connement eects. Improving the eciency of
thermoelectric devices allows for the development of better, more economical waste
heat recovery systems. Such systems may be used as bottoming or co-generation
cycles in conjunction with conventional power cycles to recover some of the wasted
heat. Thermal conductivity measurement systems are an important part of the char-
acterization processes of thermoelectric materials. These systems must possess the
capability of accurately measuring the thermal conductivity of both bulk and thin-lm
samples at dierent ambient temperatures.
This paper discusses the construction, validation, and improvement of a thermal
conductivity measurement platform based on the 3-Omega technique. Room temperature
measurements of thermal conductivity done on control samples with known properties
such as undoped bulk silicon (Si), bulk gallium arsenide (GaAs), and silicon dioxide
(SiO2) thin lms yielded 150 W=m􀀀K, 50 W=m􀀀K, and 1:46 W=m􀀀K respectively.
These quantities were all within 8% of literature values. In addition, the thermal
conductivity of bulk SiO2 was measured as a function of temperature in a Helium-
4 cryostat from 75K to 250K. The results showed good agreement with literature
values that all fell within the error range of each measurement. The uncertainty in
the measurements ranged from 19% at 75K to 30% at 250K. Finally, the system
was used to measure the room temperature thermal conductivity of a nanocomposite
composed of cadmium selenide, CdSe, nanocrystals in an indium selenide, In2Se3,
matrix as a function of the concentration of In2Se3. The observed trend was in
qualitative agreement with the expected behavior.
i
ure of merit (zT) due to quantum connement eects. Improving the eciency of
thermoelectric devices allows for the development of better, more economical waste
heat recovery systems. Such systems may be used as bottoming or co-generation
cycles in conjunction with conventional power cycles to recover some of the wasted
heat. Thermal conductivity measurement systems are an important part of the char-
acterization processes of thermoelectric materials. These systems must possess the
capability of accurately measuring the thermal conductivity of both bulk and thin-lm
samples at dierent ambient temperatures.
This paper discusses the construction, validation, and improvement of a thermal
conductivity measurement platform based on the 3-Omega technique. Room temperature
measurements of thermal conductivity done on control samples with known properties
such as undoped bulk silicon (Si), bulk gallium arsenide (GaAs), and silicon dioxide
(SiO2) thin lms yielded 150 W=m􀀀K, 50 W=m􀀀K, and 1:46 W=m􀀀K respectively.
These quantities were all within 8% of literature values. In addition, the thermal
conductivity of bulk SiO2 was measured as a function of temperature in a Helium-
4 cryostat from 75K to 250K. The results showed good agreement with literature
values that all fell within the error range of each measurement. The uncertainty in
the measurements ranged from 19% at 75K to 30% at 250K. Finally, the system
was used to measure the room temperature thermal conductivity of a nanocomposite
composed of cadmium selenide, CdSe, nanocrystals in an indium selenide, In2Se3,
matrix as a function of the concentration of In2Se3. The observed trend was in
qualitative agreement with the expected behavior.
i
ContributorsJaber, Abbas (Author) / Wang, Robert (Thesis advisor) / Wang, Liping (Committee member) / Rykaczewski, Konrad (Committee member) / Arizona State University (Publisher)
Created2014
ContributorsChopin, Frédéric, 1810-1849 (Composer)
Description
The ability to shift the photovoltaic (PV) power curve and make the energy accessible during peak hours can be accomplished through pairing solar PV with energy storage technologies. A prototype hybrid air conditioning system (HACS), built under supervision of project head Patrick Phelan, consists of PV modules running a DC compressor that operates a conventional HVAC system paired with a second evaporator submerged within a thermal storage tank. The thermal storage is a 0.284m3 or 75 gallon freezer filled with Cryogel balls, submerged in a weak glycol solution. It is paired with its own separate air handler, circulating the glycol solution. The refrigerant flow is controlled by solenoid valves that are electrically connected to a high and low temperature thermostat. During daylight hours, the PV modules run the DC compressor. The refrigerant flow is directed to the conventional HVAC air handler when cooling is needed. Once the desired room temperature is met, refrigerant flow is diverted to the thermal storage, storing excess PV power. During peak energy demand hours, the system uses only small amounts of grid power to pump the glycol solution through the air handler (note the compressor is off), allowing for money and energy savings. The conventional HVAC unit can be scaled down, since during times of large cooling demands the glycol air handler can be operated in parallel with the conventional HVAC unit. Four major test scenarios were drawn up in order to fully comprehend the performance characteristics of the HACS. Upon initial running of the system, ice was produced and the thermal storage was charged. A simple test run consisting of discharging the thermal storage, initially ~¼ frozen, was performed. The glycol air handler ran for 6 hours and the initial cooling power was 4.5 kW. This initial test was significant, since greater than 3.5 kW of cooling power was produced for 3 hours, thus demonstrating the concept of energy storage and recovery.
ContributorsPeyton-Levine, Tobin (Author) / Phelan, Patrick (Thesis advisor) / Trimble, Steve (Committee member) / Wang, Robert (Committee member) / Arizona State University (Publisher)
Created2012
ContributorsChopin, Frédéric, 1810-1849 (Composer)
ContributorsChopin, Frédéric, 1810-1849 (Composer)
ContributorsChopin, Frédéric, 1810-1849 (Composer)
ContributorsChopin, Frédéric, 1810-1849 (Composer)
ContributorsChopin, Frédéric, 1810-1849 (Composer)
ContributorsChopin, Frédéric, 1810-1849 (Composer)