Matching Items (83)
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Description
Microstructure refinement and alloy additions are considered potential routes to increase high temperature performance of existing metallic superalloys used under extreme conditions. Nanocrystalline (NC) Cu-10at%Ta exhibits such improvements over microstructurally unstable NC metals, leading to enhanced creep behavior compared to its coarse-grained (CG) counterparts. However, the low melting point of

Microstructure refinement and alloy additions are considered potential routes to increase high temperature performance of existing metallic superalloys used under extreme conditions. Nanocrystalline (NC) Cu-10at%Ta exhibits such improvements over microstructurally unstable NC metals, leading to enhanced creep behavior compared to its coarse-grained (CG) counterparts. However, the low melting point of Cu compared to other FCC metals, e.g., Ni, might lead to an early onset of diffusional creep mechanisms. Thus, this research seeks to study the thermo-mechanical behavior and stability of hierarchical (prepared using arc-melting) and NC (prepared by collaborators through powder pressing and annealing) Ni-Y-Zr alloys where Zr is expected to provide solid solution and grain boundary strengthening in hierarchical and NC alloys, respectively, while Ni-Y and Ni-Zr intermetallic precipitates (IMCs) would provide kinetic stability. Hierarchical alloys had microstructures stable up to 1100 °C with ultrafine eutectic of ~300 nm, dendritic arm spacing of ~10 μm, and grain size ~1-2 mm. Room temperature hardness tests along with uniaxial compression performed at 25 and 600 °C revealed that microhardness and yield strength of hierarchical alloys with small amounts of Y (0.5-1wt%) and Zr (1.5-3 wt%) were comparable to Ni-superalloys, due to the hierarchical microstructure and potential presence of nanoscale IMCs. In contrast, NC alloys of the same composition were found to be twice as hard as the hierarchical alloys. Creep tests at 0.5 homologous temperature showed active Coble creep mechanisms in hierarchical alloys at low stresses with creep rates slower than Fe-based superalloys and dislocation creep mechanisms at higher stresses. Creep in NC alloys at lower stresses was only 20 times faster than hierarchical alloys, with the difference in grain size ranging from 10^3 to 10^6 times at the same temperature. These NC alloys showed enhanced creep properties over other NC metals and are expected to have rates equal to or improved over the CG hierarchical alloys with ECAP processing techniques. Lastly, the in-situ wide-angle x-ray scattering (WAXS) measurements during quasi-static and creep tests implied stresses being carried mostly by the matrix before yielding and in the primary creep stage, respectively, while relaxation was observed in Ni5Zr for both hierarchical and NC alloys. Beyond yielding and in the secondary creep stage, lattice strains reached a steady state, thereby, an equilibrium between plastic strain rates was achieved across different phases, so that deformation reaches a saturation state where strain hardening effects are compensated by recovery mechanisms.
ContributorsSharma, Shruti (Author) / Peralta, Pedro (Thesis advisor) / Alford, Terry (Committee member) / Jiao, Yang (Committee member) / Solanki, Kiran (Committee member) / Arizona State University (Publisher)
Created2022
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Description
In the past decade, 2D materials especially transition metal dichalcogenides (TMDc), have been studied extensively for their remarkable optical and electrical properties arising from their reduced dimensionality. A new class of materials developed based on 2D TMDc that has gained great interest in recent years is Janus crystals. In contrast

In the past decade, 2D materials especially transition metal dichalcogenides (TMDc), have been studied extensively for their remarkable optical and electrical properties arising from their reduced dimensionality. A new class of materials developed based on 2D TMDc that has gained great interest in recent years is Janus crystals. In contrast to TMDc, Janus monolayer consists of two different chalcogen atomic layers between which the transition metal layer is sandwiched. This structural asymmetry causes strain buildup or a vertically oriented electric field to form within the monolayer. The presence of strain brings questions about the materials' synthesis approach, particularly when strain begins to accumulate and whether it causes defects within monolayers.The initial research demonstrated that Janus materials could be synthesized at high temperatures inside a chemical vapor deposition (CVD) furnace. Recently, a new method (selective epitaxy atomic replacement - SEAR) for plasma-based room temperature Janus crystal synthesis was proposed. In this method etching and replacing top layer chalcogen atoms of the TMDc monolayer happens with reactive hydrogen and sulfur radicals. Based on Raman and photoluminescence studies, the SEAR method produces high-quality Janus materials. Another method used to create Janus materials was the pulsed laser deposition (PLD) technique, which utilizes the interaction of sulfur/selenium plume with monolayer to replace the top chalcogen atomic layer in a single step. The goal of this analysis is to characterize microscale defects that appear in 2D Janus materials after they are synthesized using SEAR and PLD techniques. Various microscopic techniques were used for this purpose, as well as to understand the mechanism of defect formation. The main mechanism of defect formation was proposed to be strain release phenomena. Furthermore, different chalcogen atom positions within the monolayer result in different types of defects, such as the appearance of cracks or wrinkles across monolayers. In addition to investigating sample topography, Kelvin probe force microscopy (KPFM) was used to examine its electrical properties to see if the formation of defects impacts work function. Further study directions have been suggested for identifying and characterizing defects and their formation mechanism in the Janus crystals to understand their fundamental properties.
ContributorsSinha, Shantanu (Author) / Tongay, Sefaattin (Thesis advisor) / Alford, Terry (Committee member) / Yang, Sui (Committee member) / Arizona State University (Publisher)
Created2022
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Description
Complex perovskite materials, including Ba(Zn1/3Ta2/3)O3 (BZT), are commonly used to make resonators and filters in communication systems because of their low dielectric loss and high-quality factors (Q). Transition metal additives are introduced (i.e., Ni2+, Co2+, Mn2+) to act as sintering agents and tune their temperature coefficient to zero or near-zero.

Complex perovskite materials, including Ba(Zn1/3Ta2/3)O3 (BZT), are commonly used to make resonators and filters in communication systems because of their low dielectric loss and high-quality factors (Q). Transition metal additives are introduced (i.e., Ni2+, Co2+, Mn2+) to act as sintering agents and tune their temperature coefficient to zero or near-zero. However, losses in these commercial dielectric materials at cryogenic temperatures increase markedly due to spin-excitation resulting from the presence of paramagnetic defects. Applying a large magnetic field (e.g., 5 Tesla) quenches these losses and has allowed the study of other loss mechanisms present at low temperatures. Work was performed on Fe3+ doped LaAlO3. At high magnetic fields, the residual losses versus temperature plots exhibit Debye peaks at ~40 K, ~75 K, and ~215 K temperature and can be tentatively associated with defect reactions O_i^x+V_O^x→O_i^'+V_O^•, Fe_Al^x+V_Al^"→Fe_Al^'+V_Al^' and Al_i^x+Al_i^(••)→〖2Al〗_i^•, respectively. Peaks in the loss tangent versus temperature graph of Zn-deficient BZT indicate a higher concentration of defects and appear to result from conduction losses.Guided by the knowledge gained from this study, a systematic study to develop high-performance microwave materials for ultra-high performance at cryogenic temperatures was performed. To this end, the production and characterization of perovskite materials that were either undoped or contained non-paramagnetic additives were carried out. Synthesis of BZT ceramic with over 98% theoretical density was obtained using B2O3 or BaZrO3 additives. At 4 K, the highest Q x f product of 283,000 GHz was recorded for 5% BaZrO3 doped BZT. A portable, inexpensive open-air spectrometer was designed, built, and tested to make the electron paramagnetic resonance (EPR) technique more accessible for high-school and university lab instruction. In this design, the sample is placed near a dielectric resonator and does not need to be enclosed in a cavity, as is used in commercial EPR spectrometers. Permanent magnets used produce fields up to 1500 G, enabling EPR measurements up to 3 GHz.
ContributorsGajare, Siddhesh Girish (Author) / Newman, Nathan (Thesis advisor) / Alford, Terry (Committee member) / Tongay, Sefaattin (Committee member) / Chamberlin, Ralph (Committee member) / Arizona State University (Publisher)
Created2022
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Description
Many important technologies, including electronics, computing, communications, optoelectronics, and sensing, are built on semiconductors. The band gap is a crucial factor in determining the electrical and optical properties of semiconductors. Beyond graphene, newly found two-dimensional (2D) materials have semiconducting bandgaps that range from the ultraviolet in hexagonal boron nitride to

Many important technologies, including electronics, computing, communications, optoelectronics, and sensing, are built on semiconductors. The band gap is a crucial factor in determining the electrical and optical properties of semiconductors. Beyond graphene, newly found two-dimensional (2D) materials have semiconducting bandgaps that range from the ultraviolet in hexagonal boron nitride to the terahertz and mid-infrared in bilayer graphene and black phosphorus, visible in transition metal dichalcogenides (TMDs). These 2D materials were shown to have highly controllable bandgaps which can be controlled by alloying. Only a small number of TMDs and monochalcogenides have been alloyed, though, because alloying compromised the material's Van der Waals (Vdw) property and the stability of the host crystal lattice phase. Phase transition in 2D materials is an interesting phenomenon where work has been done only on few TMDs namely MoTe2, MoS2, TaS2 etc.In order to change the band gaps and move them towards the UV (ultraviolet) and IR (infrared) regions, this work has developed new 2D alloys in InSe by alloying them with S and Te at 10% increasing concentrations. As the concentration of the chalcogens (S and Te) increased past a certain point, a structural phase transition in the alloys was observed. However, pinpointing the exact concentration for phase change and inducing phase change using external stimuli will be a thing of the future. The resulting changes in the crystal structure and band gap were characterized using some basic characterization techniques like scanning electron microscopy (SEM), X-ray Diffraction (XRD), Raman and photoluminescence spectroscopy.
ContributorsYarra, Anvesh Sai (Author) / Tongay, Sefaattin (Thesis advisor) / Yang, Sui (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2022
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Description
Diamond transistors are promising as high-power and high-frequency devices having higher efficiencies than conventional transistors. Diamond possesses superior electronic properties, such as a high bandgap (5.47 eV), high breakdown voltage (>10 MV cm−1 ), high electron and hole mobilities [4500 and 3800 cm2 V−1 · s−1, respectively], high electron

Diamond transistors are promising as high-power and high-frequency devices having higher efficiencies than conventional transistors. Diamond possesses superior electronic properties, such as a high bandgap (5.47 eV), high breakdown voltage (>10 MV cm−1 ), high electron and hole mobilities [4500 and 3800 cm2 V−1 · s−1, respectively], high electron and hole saturation velocities (1.5 × 107 and 1.05 × 107 cm s−1, respectively), and high thermal conductivity [22 W cm−1 · K−1], compared to conventional semiconductors. Reportedly, the diamond field-effect transistors (FETs) have shown transition frequencies (fT) of 45 and 70 GHz, maximum oscillation frequency (fmax) of 120 GHz, and radiofrequency (RF) power densities of 2.1 and 3.8 W mm−1 at 1 GHz. A two-dimensional-hole-gas (2DHG) surface channel forms on H-diamond by transfer doping from adsorbates/dielectrics in contact with H-diamond surface. However, prior studies indicate that charge transfer at the dielectric/ H-diamond interface could result in relatively low mobility attributed to interface scattering from the transferred negative charge to acceptor region. H-terminated diamond exhibits a negative electron affinity (NEA) of -1.1 to -1.3 eV, which is crucial to enable charge transfer doping. To overcome these limitations modulation doping, that is, selective doping, that leads to spatial separation of the MoO3 acceptor layer from the hole channel on H-diamond has been proposed. Molybdenum oxide (MoO3) was used as dielectric as it has electron affinity of 5.9eV and could align its conduction band minimum (CBM) below the valence band maximum (VBM) of H-terminated diamond. The band alignment provides the driving potential for charge transfer. Hafnium oxide (HfO2) was used as interfacial layer since it is a high-k oxide insulator (∼25), having large Eg (5.6 eV), high critical breakdown field, and high thermal stability. This study presents photoemission measurements of the electronic band alignments of the MoO3/HfO2/H-diamond layer structure to gain insight into the driving potential for the negative charge transfer and the location of the negative charges near the interface, in the HfO2 layer or in the MoO3 layer. The diamond hole concentration, mobility, and sheet resistance were characterized for MoO3/HfO2/H-Diamond with HfO2 layers of 0, 2 and 4 nm thickness.
ContributorsDeshmukh, Aditya Vilasrao (Author) / Nemanich, Robert J. (Thesis advisor) / Alford, Terry (Committee member) / Yang, Sui (Committee member) / Arizona State University (Publisher)
Created2024
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Description
ABSTRACT



Large-pore metal-organic framework (MOF) membranes offer potential in a number of gas and liquid separations due to their wide and selective adsorption capacities. A key characteristic of a number of MOF and zeolitic imidazolate framework (ZIF) membranes is their highly selective adsorption capacities for CO2.

ABSTRACT



Large-pore metal-organic framework (MOF) membranes offer potential in a number of gas and liquid separations due to their wide and selective adsorption capacities. A key characteristic of a number of MOF and zeolitic imidazolate framework (ZIF) membranes is their highly selective adsorption capacities for CO2. These membranes offer very tangible potential to separate CO2 in a wide array of industrially relevant separation processes, such as the separation from CO2 in flue gas emissions, as well as the sweetening of methane.

By virtue of this, the purpose of this dissertation is to synthesize and characterize two linear large-pore MOF membranes, MOF-5 and ZIF-68, and to study their gas separation properties in binary mixtures of CO¬2/N2 and CO2/CH4. The three main objectives researched are as follows. The first is to study the pervaporation behavior and stability of MOF-5; this is imperative because although MOF-5 exhibits desirable adsorption and separation characteristics, it is very unstable in atmospheric conditions. In determining its stability and behavior in pervaporation, this material can be utilized in conditions wherein atmospheric levels of moisture can be avoided. The second objective is to synthesize, optimize and characterize a linear, more stable MOF membrane, ZIF-68. The final objective is to study in tandem the high-pressure gas separation behavior of MOF-5 and ZIF-68 in binary gas systems of both CO2/N2 and CO2/CH4.

Continuous ZIF-68 membranes were synthesized via the reactive seeding method and the modified reactive seeding method. These membranes, as with the MOF-5 membranes synthesized herein, both showed adherence to Knudsen diffusion, indicating limited defects. Organic solvent experiments indicated that MOF-5 and ZIF-68 were stable in a variety of organic solvents, but both showed reductions in permeation flux of the tested molecules. These reductions were attributed to fouling and found to be cumulative up until a saturation of available bonding sites for molecules was reached and stable pervaporation permeances were reached for both. Gas separation behavior for MOF-5 showed direct dependence on the CO2 partial pressure and the overall feed pressure, while ZIF-68 did not show similar behavior. Differences in separation behavior are attributable to orientation of the ZIF-68 membranes.
ContributorsKasik, Alexandra Marie (Author) / Lin, Jerry (Thesis advisor) / Tasooji, Amaneh (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2015
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Description
Stress-related failure such as cracking are an important photovoltaic (PV) reliability issue since it accounts for a high percentage of power losses in the midlife-failure and wear-out failure regimes. Cell cracking can only be correlated with module degradation when cracks are of detectable size and detrimental to the performance. Several

Stress-related failure such as cracking are an important photovoltaic (PV) reliability issue since it accounts for a high percentage of power losses in the midlife-failure and wear-out failure regimes. Cell cracking can only be correlated with module degradation when cracks are of detectable size and detrimental to the performance. Several techniques have been explored to access the deflection and stress status on solar cell, but they have disadvantages such as high surface sensitivity.

This dissertation presents a new and non-destructive method for mapping the deflection on encapsulated solar cells using X-ray topography (XRT). This method is based on Bragg diffraction imaging, where only the areas that meet diffraction conditions will present contrast. By taking XRT images of the solar cell at various sample positions and applying an in-house developed algorithm framework, the cell‘s deflection map is obtained. Error analysis has demonstrated that the errors from the experiment and the data processing are below 4.4 and 3.3%.

Von Karman plate theory has been applied to access the stress state of the solar cells. Under the assumptions that the samples experience pure bending and plain stress conditions, the principal stresses are obtained from the cell deflection data. Results from a statistical analysis using a Weibull distribution suggest that 0.1% of the data points can contribute to critical failure. Both the soldering and lamination processes put large amounts of stress on solar cells. Even though glass/glass packaging symmetry is preferred over glass/backsheet, the solar cells inside the glass/glass packaging experience significantly more stress. Through a series of in-situ four-point bending test, the assumptions behind Von Karman theory are validated for cases where the neutral plane is displaced by the tensile and compressive stresses.

The deflection and stress mapping method is applied to two next generation PV concepts named Flex-circuit and PVMirror. The Flex-circuit module concept replaces traditional metal ribbons with Al foils for electrical contact and PVMirror concept utilizes a curved PV module design with a dichroic film for thermal storage and electrical output. The XRT framework proposed in this dissertation successfully characterized the impact of various novel interconnection and packaging solutions.
ContributorsMeng, Xiaodong (Author) / Bertoni, Marian I (Thesis advisor) / Meier, Rico (Committee member) / Holman, Zachary C (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2019
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Description
Interconnection methods for IBC photovoltaic (PV) module integration have widely been explored yet a concrete and cost-effective solution has yet to be found. Traditional methods of tabbing and stringing which are still being used today impart increased stress on the cells, not to mention the high temperatures induced during the

Interconnection methods for IBC photovoltaic (PV) module integration have widely been explored yet a concrete and cost-effective solution has yet to be found. Traditional methods of tabbing and stringing which are still being used today impart increased stress on the cells, not to mention the high temperatures induced during the soldering process as well. In this work and effective and economical interconnection method is demonstrated, by laser welding an embossed aluminum (Al) electrode layer to screen-printed silver (Ag) on the solar cell. Contact resistivity below 1mΩ.cm2 is measured with the proposed design. Cross-sectional analysis of interfaces is conducted via Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectroscopy (EDXS) methods. Typical laser weld phenomenon observed involves Al ejection at the entrance of the weld, followed by Al and Ag fusing together mid-way through the weld spot, as revealed by cross-sectional depth analysis. The effects of voltage and lamp intensity are also tested on the welding process. With the range of voltages tested, 240V seems to show the least process variability and the most uniform contact between Al and Ag layers, upon using an Ethylene-Vinyl Acetate (EVA) encapsulant. Two lamp intensities were also explored with a Polyolefin (POE) encapsulant with Al and Ag layers seen welded together as well. Smaller effect sizes at lamp 2 intensity showed better contact. A process variability analysis was conducted to understand the effects of the two different lamps on welds being formed. Lamp 2 showed a bi-modal size distribution with a higher peak intensity, with more pulses coupling into the sample, as compared to lamp 1.
ContributorsSukumar Mony, Sujyot (Author) / Holman, Zachary (Thesis advisor) / Alford, Terry (Committee member) / Yu, Zhengshan (Committee member) / Arizona State University (Publisher)
Created2019
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Description
Global industrialization and urbanization have led to increased levels of air pollution. The costs to society have come in the form of environmental damage, healthcare expenses, lost productivity, and premature mortality. Measuring pollutants is an important task for identifying its sources, warning individuals about dangerous exposure levels, and providing epidemiologists

Global industrialization and urbanization have led to increased levels of air pollution. The costs to society have come in the form of environmental damage, healthcare expenses, lost productivity, and premature mortality. Measuring pollutants is an important task for identifying its sources, warning individuals about dangerous exposure levels, and providing epidemiologists with data to link pollutants with diseases. Current methods for monitoring air pollution are inadequate though. They rely on expensive, complex instrumentation at limited fixed monitoring sites that do not capture the true spatial and temporal variation. Furthermore, the fixed outdoor monitoring sites cannot warn individuals about indoor air quality or exposure to chemicals at worksites. Recent advances in manufacturing and computing technology have allowed new classes of low-cost miniature gas sensor to emerge as possible alternatives. For these to be successful however, there must be innovations in the sensors themselves that improve reliability, operation, and their stability and selectivity in real environments. Three novel gas sensor solutions are presented. The first is the development of a wearable personal exposure monitor using all commercially available components, including two metal oxide semiconductor gas sensors. The device monitors known asthma triggers: ozone, total volatile organic compounds, temperature, humidity, and activity level. Primary focus is placed on the ozone sensor, which requires special circuits, heating algorithm, and calibration to remove temperature and humidity interferences. Eight devices are tested in multiple field tests. The second is the creation of a new compact optoelectronic gas sensing platform using colorimetric microdroplets printed on the surface of a complementary-metal-oxide-semiconductor (CMOS) imager. The nonvolatile liquid microdroplets provide a homogeneous, uniform environment that is ideal for colorimetric reactions and lensless optical measurements. To demonstrate one type of possible indicating system gaseous ammonia is detected by complexation with Cu(II). The third project continues work on the CMOS imager optoelectronic platform and develops a more robust sensing system utilizing hydrophobic aerogel particles. Ammonia is detected colorimetrically by its reaction with a molecular dye, with additives and surface treatments enhancing uniformity of the printed films. Future work presented at the end describes a new biological particle sensing system using the CMOS imager.
ContributorsMallires, Kyle Reed (Author) / Tao, Nongjian (Thesis advisor) / Forzani, Erica (Thesis advisor) / Wiktor, Peter (Committee member) / Wang, Di (Committee member) / Alford, Terry (Committee member) / Xian, Xiaojun (Committee member) / Arizona State University (Publisher)
Created2020
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Description
An ongoing effort in the photovoltaic (PV) industry is to reduce the major manufacturing cost components of solar cells, the great majority of which are based on crystalline silicon (c-Si). This includes the substitution of screenprinted silver (Ag) cell contacts with alternative copper (Cu)-based contacts, usually applied with plating. Plated

An ongoing effort in the photovoltaic (PV) industry is to reduce the major manufacturing cost components of solar cells, the great majority of which are based on crystalline silicon (c-Si). This includes the substitution of screenprinted silver (Ag) cell contacts with alternative copper (Cu)-based contacts, usually applied with plating. Plated Cu contact schemes have been under study for many years with only minor traction in industrial production. One of the more commonly-cited barriers to the adoption of Cu-based contacts for photovoltaics is long-term reliability, as Cu is a significant contaminant in c-Si, forming precipitates that degrade performance via degradation of diode character and reduction of minority carrier lifetime. Cu contamination from contacts might cause degradation during field deployment if Cu is able to ingress into c-Si. Furthermore, Cu contamination is also known to cause a form of light-induced degradation (LID) which further degrades carrier lifetime when cells are exposed to light.

Prior literature on Cu-contact reliability tended to focus on accelerated testing at the cell and wafer level that may not be entirely replicative of real-world environmental stresses in PV modules. This thesis is aimed at advancing the understanding of Cu-contact reliability from the perspective of quasi-commercial modules under more realistic stresses. In this thesis, c-Si solar cells with Cu-plated contacts are fabricated, made into PV modules, and subjected to environmental stress in an attempt to induce hypothesized failure modes and understand any new vulnerabilities that Cu contacts might introduce. In particular, damp heat stress is applied to conventional, p-type c-Si modules and high efficiency, n-type c-Si heterojunction modules. I present evidence of Cu-induced diode degradation that also depends on PV module materials, as well as degradation unrelated to Cu, and in either case suggest engineering solutions to the observed degradation. In a forensic search for degradation mechanisms, I present novel evidence of Cu outdiffusion from contact layers and encapsulant-driven contact corrosion as potential key factors. Finally, outdoor exposures to light uncover peculiarities in Cu-plated samples, but do not point to especially serious vulnerabilities.
ContributorsKaras, Joseph (Author) / Bowden, Stuart (Thesis advisor) / Alford, Terry (Thesis advisor) / Tamizhmani, Govindasamy (Committee member) / Michaelson, Lynne (Committee member) / Arizona State University (Publisher)
Created2020