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- Genre: Doctoral Dissertation
- Creators: Bakkaloglu, Bertan
- Member of: Theses and Dissertations
Description
There is an ever-increasing demand for higher bandwidth and data rate ensuing from exploding number of radio frequency integrated systems and devices. As stated in the Shannon-Hartley theorem, the maximum achievable data rate of a communication channel is linearly proportional to the system bandwidth. This is the main driving force behind pushing wireless systems towards millimeter-wave frequency range, where larger bandwidth is available at a higher carrier frequency. Observing the Moor’s law, highly scaled complementary metal–oxide–semiconductor (CMOS) technologies provide fast transistors with a high unity power gain frequency which enables operating at millimeter-wave frequency range. CMOS is the compelling choice for digital and signal processing modules which concurrently offers high computation speed, low power consumption, and mass integration at a high manufacturing yield. One of the main shortcomings of the sub-micron CMOS technologies is the low breakdown voltage of the transistors that limits the dynamic range of the radio frequency (RF) power blocks, especially with the power amplifiers. Low voltage swing restricts the achievable output power which translates into low signal to noise ratio and degraded linearity. Extensive research has been done on proposing new design and IC fabrication techniques with the goal of generating higher output power in CMOS technology. The prominent drawbacks of these solutions are an increased die area, higher cost per design, and lower overall efficiency due to lossy passive components. In this dissertation, CMOS compatible metal–semiconductor field-effect transistor (MESFETs) are utilized to put forward a new solution to enhance the power amplifier’s breakdown voltage, gain and maximum output power. Requiring no change to the conventional CMOS process flow, this low cost approach allows direct incorporation of high voltage power MESFETs into silicon. High voltage MESFETs were employed in a cascode structure to push the amplifier’s cutoff frequency and unity power gain frequency to the 5G and K-band frequency range. This dissertation begins with CMOS compatible MESFET modeling and fabrication steps, and culminates in the discussion of amplifier design and optimization methodology, parasitic de-embedding steps, simulation and measurement results, and high resistivity RF substrate characterization.
ContributorsHabibiMehr, Payam (Author) / Thornton, Trevor John (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Formicone, Gabriele (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2019
Description
Buck converters are electronic devices that changes a voltage from one level to a lower one and are present in many everyday applications. However, due to factors like aging, degradation or failures, these devices require a system identification process to track and diagnose their parameters. The system identification process should be performed on-line to not affect the normal operation of the device. Identifying the parameters of the system is essential to design and tune an adaptive proportional-integral-derivative (PID) controller.
Three techniques were used to design the PID controller. Phase and gain margin still prevails as one of the easiest methods to design controllers. Pole-zero cancellation is another technique which is based on pole-placement. However, although these controllers can be easily designed, they did not provide the best response compared to the Frequency Loop Shaping (FLS) technique. Therefore, since FLS showed to have a better frequency and time responses compared to the other two controllers, it was selected to perform the adaptation of the system.
An on-line system identification process was performed for the buck converter using indirect adaptation and the least square algorithm. The estimation error and the parameter error were computed to determine the rate of convergence of the system. The indirect adaptation required about 2000 points to converge to the true parameters prior designing the controller. These results were compared to the adaptation executed using robust stability condition (RSC) and a switching controller. Two different scenarios were studied consisting of five plants that defined the percentage of deterioration of the capacitor and inductor within the buck converter. The switching logic did not always select the optimal controller for the first scenario because the frequency response of the different plants was not significantly different. However, the second scenario consisted of plants with more noticeable different frequency responses and the switching logic selected the optimal controller all the time in about 500 points. Additionally, a disturbance was introduced at the plant input to observe its effect in the switching controller. However, for reasonable low disturbances no change was detected in the proper selection of controllers.
Three techniques were used to design the PID controller. Phase and gain margin still prevails as one of the easiest methods to design controllers. Pole-zero cancellation is another technique which is based on pole-placement. However, although these controllers can be easily designed, they did not provide the best response compared to the Frequency Loop Shaping (FLS) technique. Therefore, since FLS showed to have a better frequency and time responses compared to the other two controllers, it was selected to perform the adaptation of the system.
An on-line system identification process was performed for the buck converter using indirect adaptation and the least square algorithm. The estimation error and the parameter error were computed to determine the rate of convergence of the system. The indirect adaptation required about 2000 points to converge to the true parameters prior designing the controller. These results were compared to the adaptation executed using robust stability condition (RSC) and a switching controller. Two different scenarios were studied consisting of five plants that defined the percentage of deterioration of the capacitor and inductor within the buck converter. The switching logic did not always select the optimal controller for the first scenario because the frequency response of the different plants was not significantly different. However, the second scenario consisted of plants with more noticeable different frequency responses and the switching logic selected the optimal controller all the time in about 500 points. Additionally, a disturbance was introduced at the plant input to observe its effect in the switching controller. However, for reasonable low disturbances no change was detected in the proper selection of controllers.
ContributorsSerrano Rodriguez, Victoria Melissa (Author) / Tsakalis, Konstantinos (Thesis advisor) / Bakkaloglu, Bertan (Thesis advisor) / Rodriguez, Armando (Committee member) / Spanias, Andreas (Committee member) / Arizona State University (Publisher)
Created2016
Description
Digital architectures for data encryption, processing, clock synthesis, data transfer, etc. are susceptible to radiation induced soft errors due to charge collection in complementary metal oxide semiconductor (CMOS) integrated circuits (ICs). Radiation hardening by design (RHBD) techniques such as double modular redundancy (DMR) and triple modular redundancy (TMR) are used for error detection and correction respectively in such architectures. Multiple node charge collection (MNCC) causes domain crossing errors (DCE) which can render the redundancy ineffectual. This dissertation describes techniques to ensure DCE mitigation with statistical confidence for various designs. Both sequential and combinatorial logic are separated using these custom and computer aided design (CAD) methodologies.
Radiation vulnerability and design overhead are studied on VLSI sub-systems including an advanced encryption standard (AES) which is DCE mitigated using module level coarse separation on a 90-nm process with 99.999% DCE mitigation. A radiation hardened microprocessor (HERMES2) is implemented in both 90-nm and 55-nm technologies with an interleaved separation methodology with 99.99% DCE mitigation while achieving 4.9% increased cell density, 28.5 % reduced routing and 5.6% reduced power dissipation over the module fences implementation. A DMR register-file (RF) is implemented in 55 nm process and used in the HERMES2 microprocessor. The RF array custom design and the decoders APR designed are explored with a focus on design cycle time. Quality of results (QOR) is studied from power, performance, area and reliability (PPAR) perspective to ascertain the improvement over other design techniques.
A radiation hardened all-digital multiplying pulsed digital delay line (DDL) is designed for double data rate (DDR2/3) applications for data eye centering during high speed off-chip data transfer. The effect of noise, radiation particle strikes and statistical variation on the designed DDL are studied in detail. The design achieves the best in class 22.4 ps peak-to-peak jitter, 100-850 MHz range at 14 pJ/cycle energy consumption. Vulnerability of the non-hardened design is characterized and portions of the redundant DDL are separated in custom and auto-place and route (APR). Thus, a range of designs for mission critical applications are implemented using methodologies proposed in this work and their potential PPAR benefits explored in detail.
Radiation vulnerability and design overhead are studied on VLSI sub-systems including an advanced encryption standard (AES) which is DCE mitigated using module level coarse separation on a 90-nm process with 99.999% DCE mitigation. A radiation hardened microprocessor (HERMES2) is implemented in both 90-nm and 55-nm technologies with an interleaved separation methodology with 99.99% DCE mitigation while achieving 4.9% increased cell density, 28.5 % reduced routing and 5.6% reduced power dissipation over the module fences implementation. A DMR register-file (RF) is implemented in 55 nm process and used in the HERMES2 microprocessor. The RF array custom design and the decoders APR designed are explored with a focus on design cycle time. Quality of results (QOR) is studied from power, performance, area and reliability (PPAR) perspective to ascertain the improvement over other design techniques.
A radiation hardened all-digital multiplying pulsed digital delay line (DDL) is designed for double data rate (DDR2/3) applications for data eye centering during high speed off-chip data transfer. The effect of noise, radiation particle strikes and statistical variation on the designed DDL are studied in detail. The design achieves the best in class 22.4 ps peak-to-peak jitter, 100-850 MHz range at 14 pJ/cycle energy consumption. Vulnerability of the non-hardened design is characterized and portions of the redundant DDL are separated in custom and auto-place and route (APR). Thus, a range of designs for mission critical applications are implemented using methodologies proposed in this work and their potential PPAR benefits explored in detail.
ContributorsRamamurthy, Chandarasekaran (Author) / Clark, Lawrence T (Thesis advisor) / Allee, David (Committee member) / Bakkaloglu, Bertan (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2017
Description
As wireless communication enters smartphone era, more complicated communication technologies are being used to transmit higher data rate. Power amplifier (PA) has to work in back-off region, while this inevitably reduces battery life for cellphones. Various techniques have been reported to increase PA efficiency, such as envelope elimination and restoration (EER) and envelope tracking (ET). However, state of the art ET supply modulators failed to address high efficiency, high slew rate, and accurate tracking concurrently.
In this dissertation, a linear-switch mode hybrid ET supply modulator utilizing adaptive biasing and gain enhanced current mirror operational transconductance amplifier (OTA) with class-AB output stage in parallel with a switching regulator is presented. In comparison to a conventional OTA design with similar quiescent current consumption, proposed approach improves positive and negative slew rate from 50 V/µs to 93.4 V/µs and -87 V/µs to -152.5 V/µs respectively, dc gain from 45 dB to 67 dB while consuming same amount of quiescent current. The proposed hybrid supply modulator achieves 83% peak efficiency, power added efficiency (PAE) of 42.3% at 26.2 dBm for a 10 MHz 7.24 dB peak-to-average power ratio (PAPR) LTE signal and improves PAE by 8% at 6 dB back off from 26.2 dBm power amplifier (PA) output power with respect to fixed supply. With a 10 MHz 7.24 dB PAPR QPSK LTE signal the ET PA system achieves adjacent channel leakage ratio (ACLR) of -37.7 dBc and error vector magnitude (EVM) of 4.5% at 26.2 dBm PA output power, while with a 10 MHz 8.15 dB PAPR 64QAM LTE signal the ET PA system achieves ACLR of -35.6 dBc and EVM of 6% at 26 dBm PA output power without digital pre-distortion (DPD). The proposed supply modulator core circuit occupies 1.1 mm2 die area, and is fabricated in a 0.18 µm CMOS technology.
In this dissertation, a linear-switch mode hybrid ET supply modulator utilizing adaptive biasing and gain enhanced current mirror operational transconductance amplifier (OTA) with class-AB output stage in parallel with a switching regulator is presented. In comparison to a conventional OTA design with similar quiescent current consumption, proposed approach improves positive and negative slew rate from 50 V/µs to 93.4 V/µs and -87 V/µs to -152.5 V/µs respectively, dc gain from 45 dB to 67 dB while consuming same amount of quiescent current. The proposed hybrid supply modulator achieves 83% peak efficiency, power added efficiency (PAE) of 42.3% at 26.2 dBm for a 10 MHz 7.24 dB peak-to-average power ratio (PAPR) LTE signal and improves PAE by 8% at 6 dB back off from 26.2 dBm power amplifier (PA) output power with respect to fixed supply. With a 10 MHz 7.24 dB PAPR QPSK LTE signal the ET PA system achieves adjacent channel leakage ratio (ACLR) of -37.7 dBc and error vector magnitude (EVM) of 4.5% at 26.2 dBm PA output power, while with a 10 MHz 8.15 dB PAPR 64QAM LTE signal the ET PA system achieves ACLR of -35.6 dBc and EVM of 6% at 26 dBm PA output power without digital pre-distortion (DPD). The proposed supply modulator core circuit occupies 1.1 mm2 die area, and is fabricated in a 0.18 µm CMOS technology.
ContributorsJing, Yue (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kiaei, Sayfe (Committee member) / Kitchen, Jennifer (Committee member) / Song, Hongjiang (Committee member) / Arizona State University (Publisher)
Created2017
Description
Time-interleaved analog to digital converters (ADCs) have become critical components in high-speed communication systems. Consumers demands for smaller size, more bandwidth and more features from their communication systems have driven the market to use modern complementary metal-oxide-semiconductor (CMOS) technologies with shorter channel-length transistors and hence a more compact design. Downscaling the supply voltage which is required in submicron technologies benefits digital circuits in terms of power and area. Designing accurate analog circuits, however becomes more challenging due to the less headroom. One way to overcome this problem is to use calibration to compensate for the loss of accuracy in analog circuits.
Time-interleaving increases the effective data conversion rate in ADCs while keeping the circuit requirements the same. However, this technique needs special considerations as other design issues associated with using parallel identical channels emerge. The first and the most important is the practical issue of timing mismatch between channels, also called sample-time error, which can directly affect the performance of the ADC. Many techniques have been developed to tackle this issue both in analog and digital domains. Most of these techniques have high complexities especially when the number of channels exceeds 2 and some of them are only valid when input signal is a single tone sinusoidal which limits the application.
This dissertation proposes a sample-time error calibration technique which bests the previous techniques in terms of simplicity, and also could be used with arbitrary input signals. A 12-bit 650 MSPS pipeline ADC with 1.5 GHz analog bandwidth for digital beam forming systems is designed in IBM 8HP BiCMOS 130 nm technology. A front-end sample-and-hold amplifier (SHA) was also designed to compare with an SHA-less design in terms of performance, power and area. Simulation results show that the proposed technique is able to improve the SNDR by 20 dB for a mismatch of 50% of the sampling period and up to 29 dB at 37% of the Nyquist frequency. The designed ADC consumes 122 mW in each channel and the clock generation circuit consumes 142 mW. The ADC achieves 68.4 dB SNDR for an input of 61 MHz.
Time-interleaving increases the effective data conversion rate in ADCs while keeping the circuit requirements the same. However, this technique needs special considerations as other design issues associated with using parallel identical channels emerge. The first and the most important is the practical issue of timing mismatch between channels, also called sample-time error, which can directly affect the performance of the ADC. Many techniques have been developed to tackle this issue both in analog and digital domains. Most of these techniques have high complexities especially when the number of channels exceeds 2 and some of them are only valid when input signal is a single tone sinusoidal which limits the application.
This dissertation proposes a sample-time error calibration technique which bests the previous techniques in terms of simplicity, and also could be used with arbitrary input signals. A 12-bit 650 MSPS pipeline ADC with 1.5 GHz analog bandwidth for digital beam forming systems is designed in IBM 8HP BiCMOS 130 nm technology. A front-end sample-and-hold amplifier (SHA) was also designed to compare with an SHA-less design in terms of performance, power and area. Simulation results show that the proposed technique is able to improve the SNDR by 20 dB for a mismatch of 50% of the sampling period and up to 29 dB at 37% of the Nyquist frequency. The designed ADC consumes 122 mW in each channel and the clock generation circuit consumes 142 mW. The ADC achieves 68.4 dB SNDR for an input of 61 MHz.
ContributorsNazari, Ali (Author) / Barnaby, Hugh James (Thesis advisor) / Jalali-Farahani, Bahar (Committee member) / Bakkaloglu, Bertan (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2017
Description
Presently, hard-switching buck/boost converters are dominantly used for automotive applications. Automotive applications have stringent system requirements for dc-dc converters, such as wide input voltage range and limited EMI noise emission. High switching frequency of the dc-dc converters is much desired in automotive applications for avoiding AM band interference and for compact size. However, hard switching buck converter is not suitable at high frequency operation because of its low efficiency. In addition, buck converter has high EMI noise due to its hard-switching. Therefore, soft-switching topologies are considered in this thesis work to improve the performance of the dc-dc converters.
Many soft-switching topologies are reviewed but none of them is well suited for the given automotive applications. Two soft-switching PWM converters are proposed in this work. For low power automotive POL applications, a new active-clamp buck converter is proposed. Comprehensive analysis of this converter is presented. A 2.2 MHz, 25 W active-clamp buck converter prototype with Si MOSFETs was designed and built. The experimental results verify the operation of the converter. For 12 V to 5 V conversion, the Si based prototype achieves a peak efficiency of 89.7%. To further improve the efficiency, GaN FETs are used and an optimized SR turn-off delay is employed. Then, a peak efficiency of 93.22% is achieved. The EMI test result shows significantly improved EMI performance of the proposed active-clamp buck converter. Last, large- and small-signal models of the proposed converter are derived and verified by simulation.
For automotive dual voltage system, a new bidirectional zero-voltage-transition (ZVT) converter with coupled-inductor is proposed in this work. With the coupled-inductor, the current to realize zero-voltage-switching (ZVS) of main switches is much reduced and the core loss is minimized. Detailed analysis and design considerations for the proposed converter are presented. A 1 MHz, 250 W prototype is designed and constructed. The experimental results verify the operation. Peak efficiencies of 93.98% and 92.99% are achieved in buck mode and boost mode, respectively. Significant efficiency improvement is achieved from the efficiency comparison between the hard-switching buck converter and the proposed ZVT converter with coupled-inductor.
Many soft-switching topologies are reviewed but none of them is well suited for the given automotive applications. Two soft-switching PWM converters are proposed in this work. For low power automotive POL applications, a new active-clamp buck converter is proposed. Comprehensive analysis of this converter is presented. A 2.2 MHz, 25 W active-clamp buck converter prototype with Si MOSFETs was designed and built. The experimental results verify the operation of the converter. For 12 V to 5 V conversion, the Si based prototype achieves a peak efficiency of 89.7%. To further improve the efficiency, GaN FETs are used and an optimized SR turn-off delay is employed. Then, a peak efficiency of 93.22% is achieved. The EMI test result shows significantly improved EMI performance of the proposed active-clamp buck converter. Last, large- and small-signal models of the proposed converter are derived and verified by simulation.
For automotive dual voltage system, a new bidirectional zero-voltage-transition (ZVT) converter with coupled-inductor is proposed in this work. With the coupled-inductor, the current to realize zero-voltage-switching (ZVS) of main switches is much reduced and the core loss is minimized. Detailed analysis and design considerations for the proposed converter are presented. A 1 MHz, 250 W prototype is designed and constructed. The experimental results verify the operation. Peak efficiencies of 93.98% and 92.99% are achieved in buck mode and boost mode, respectively. Significant efficiency improvement is achieved from the efficiency comparison between the hard-switching buck converter and the proposed ZVT converter with coupled-inductor.
ContributorsNan, Chenhao (Author) / Ayyanar, Raja (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Karady, George G. (Committee member) / Qin, Jiangchao (Committee member) / Arizona State University (Publisher)
Created2016
Description
A Microbial fuel cell (MFC) is a bio-inspired carbon-neutral, renewable electrochemical converter to extract electricity from catabolic reaction of micro-organisms. It is a promising technology capable of directly converting the abundant biomass on the planet into electricity and potentially alleviate the emerging global warming and energy crisis. The current and power density of MFCs are low compared with conventional energy conversion techniques. Since its debut in 2002, many studies have been performed by adopting a variety of new configurations and structures to improve the power density. The reported maximum areal and volumetric power densities range from 19 mW/m2 to 1.57 W/m2 and from 6.3 W/m3 to 392 W/m3, respectively, which are still low compared with conventional energy conversion techniques. In this dissertation, the impact of scaling effect on the performance of MFCs are investigated, and it is found that by scaling down the characteristic length of MFCs, the surface area to volume ratio increases and the current and power density improves. As a result, a miniaturized MFC fabricated by Micro-Electro-Mechanical System(MEMS) technology with gold anode is presented in this dissertation, which demonstrate a high power density of 3300 W/m3. The performance of the MEMS MFC is further improved by adopting anodes with higher surface area to volume ratio, such as carbon nanotube (CNT) and graphene based anodes, and the maximum power density is further improved to a record high power density of 11220 W/m3. A novel supercapacitor by regulating the respiration of the bacteria is also presented, and a high power density of 531.2 A/m2 (1,060,000 A/m3) and 197.5 W/m2 (395,000 W/m3), respectively, are marked, which are one to two orders of magnitude higher than any previously reported microbial electrochemical techniques.
ContributorsRen, Hao (Author) / Chae, Junseok (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Phillips, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2016
Description
High Impedance Surfaces (HISs), which have been investigated extensively, have proven to be very efficient ground planes for low profile antenna applications due to their unique reflection phase characteristics. Another emerging research field among the microwave and antenna technologies is the design of flexible antennas and microwave circuits to be utilized in conformal applications. The combination of those two research topics gives birth to a third one, namely the design of Conformal or Flexible HISs (FHISs), which is the main subject of this dissertation. The problems associated with the FHISs are twofold: characterization and physical realization. The characterization involves the analysis of scattering properties of FHISs in the presence of plane wave and localized sources. For this purpose, an approximate analytical method is developed to characterize the reflection properties of a cylindrically curved FHIS. The effects of curvature on the reflection phase of the curved FHISs are examined. Furthermore, the effects of different types of currents, specifically the ones inherent to finite sized periodic structures, on the reflection phase characteristics are observed. After the reflection phase characterization of curved HISs, the performance of dipole antennas located in close proximity to a curved HIS are investigated, and the results are compared with the flat case. Different types of resonances that may occur for such a low-profile antenna application are discussed. The effects of curvature on the radiation performance of antennas are examined. Commercially available flexible materials are relatively thin which degrades the bandwidth of HISs. Another practical aspect, which is related to the substrate thickness, is the compactness of the surface. Because of the design limitations of conventional HISs, it is not possible to miniaturize the HIS and increase the bandwidth, simultaneously. To overcome this drawback, a novel HIS is proposed with a periodically perforated ground plane. Copper plated through holes are extremely vulnerable to bending and should be avoided at the bending parts of flexible circuits. Fortunately, if designed properly, the perforations on the ground plane may result in suppression of surface waves. Hence, metallic posts can be eliminated without hindering the surface wave suppression properties of HISs.
ContributorsDurgun, Ahmet Cemal (Author) / Balanis, Constantine A (Thesis advisor) / Aberle, James T (Committee member) / Yu, Hongyu (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2013
Description
The constant scaling of supply voltages in state-of-the-art CMOS processes has led to severe limitations for many analog circuit applications. Some CMOS processes have addressed this issue by adding high voltage MOSFETs to their process. Although it can be a completely viable solution, it usually requires a changing of the process flow or adding additional steps, which in turn, leads to an increase in fabrication costs. Si-MESFETs (silicon-metal-semiconductor-field-effect-transistors) from Arizona State University (ASU) on the other hand, have an inherent high voltage capability and can be added to any silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) CMOS process free of cost. This has been proved at five different commercial foundries on technologies ranging from 0.5 to 0.15 μm. Another critical issue facing CMOS processes on insulated substrates is the scaling of the thin silicon channel. Consequently, the future direction of SOI/SOS CMOS transistors may trend away from partially depleted (PD) transistors and towards fully depleted (FD) devices. FD-CMOS are already being implemented in multiple applications due to their very low power capability. Since the FD-CMOS market only figures to grow, it is appropriate that MESFETs also be developed for these processes. The beginning of this thesis will focus on the device aspects of both PD and FD-MESFETs including their layout structure, DC and RF characteristics, and breakdown voltage. The second half will then shift the focus towards implementing both types of MESFETs in an analog circuit application. Aside from their high breakdown ability, MESFETs also feature depletion mode operation, easy to adjust but well controlled threshold voltages, and fT's up to 45 GHz. Those unique characteristics can allow certain designs that were previously difficult to implement or prohibitively expensive using conventional technologies to now be achieved. One such application which benefits is low dropout regulators (LDO). By utilizing an n-channel MESFET as the pass transistor, a LDO featuring very low dropout voltage, fast transient response, and stable operation can be achieved without an external capacitance. With the focus of this thesis being MESFET based LDOs, the device discussion will be mostly tailored towards optimally designing MESFETs for this particular application.
ContributorsLepkowski, William (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2010
Description
This thesis presents a gas sensor readout IC for amperometric and conductometric electrochemical sensors. The Analog Front-End (AFE) readout circuit enables tracking long term exposure to hazardous gas fumes in diesel and gasoline equipments, which may be correlated to diseases. Thus, the detection and discrimination of gases using microelectronic gas sensor system is required. This thesis describes the research, development, implementation and test of a small and portable based prototype platform for chemical gas sensors to enable a low-power and low noise gas detection system. The AFE reads out the outputs of eight conductometric sensor array and eight amperometric sensor arrays. The IC consists of a low noise potentiostat, and associated 9bit current-steering DAC for sensor stimulus, followed by the first order nested chopped £U£G ADC. The conductometric sensor uses a current driven approach for extracting conductance of the sensor depending on gas concentration. The amperometric sensor uses a potentiostat to apply constant voltage to the sensors and an I/V converter to measure current out of the sensor. The core area for the AFE is 2.65x0.95 mm2. The proposed system achieves 91 dB SNR at 1.32 mW quiescent power consumption per channel. With digital offset storage and nested chopping, the readout chain achieves 500 fÝV input referred offset.
ContributorsKim, Hyun-Tae (Author) / Bakkaloglu, Bertan (Thesis advisor) / Vermeire, Bert (Committee member) / Spanias, Andreas (Committee member) / Thornton, Trevor (Committee member) / Arizona State University (Publisher)
Created2011