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- Genre: Academic theses
- Genre: Masters Thesis
- Creators: Yu, Hongbin
Description
Fluxgate sensors are magnetic field sensors that can measure DC and low frequency AC magnetic fields. They can measure much lower magnetic fields than other magnetic sensors like Hall effect sensors, magnetoresistive sensors etc. They also have high linearity, high sensitivity and low noise. The major application of fluxgate sensors is in magnetometers for the measurement of earth's magnetic field. Magnetometers are used in navigation systems and electronic compasses. Fluxgate sensors can also be used to measure high DC currents. Integrated micro-fluxgate sensors have been developed in recent years. These sensors have much lower power consumption and area compared to their PCB counterparts. The output voltage of micro-fluxgate sensors is very low which makes the analog front end more complex and results in an increase in power consumption of the system. In this thesis a new analog front-end circuit for micro-fluxgate sensors is developed. This analog front-end circuit uses charge pump based excitation circuit and phase delay based read-out chain. With these two features the power consumption of analog front-end is reduced. The output is digital and it is immune to amplitude noise at the output of the sensor. Digital output is produced without using an ADC. A SPICE model of micro-fluxgate sensor is used to verify the operation of the analog front-end and the simulation results show very good linearity.
ContributorsPappu, Karthik (Author) / Bakkaloglu, Bertan (Thesis advisor) / Christen, Jennifer Blain (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2013
Description
With the advent of social media (like Twitter, Facebook etc.,) people are easily sharing their opinions, sentiments and enforcing their ideologies on others like never before. Even people who are otherwise socially inactive would like to share their thoughts on current affairs by tweeting and sharing news feeds with their friends and acquaintances. In this thesis study, we chose Twitter as our main data platform to analyze shifts and movements of 27 political organizations in Indonesia. So far, we have collected over 30 million tweets and 150,000 news articles from RSS feeds of the corresponding organizations for our analysis. For Twitter data extraction, we developed a multi-threaded application which seamlessly extracts, cleans and stores millions of tweets matching our keywords from Twitter Streaming API. For keyword extraction, we used topics and perspectives which were extracted using n-grams techniques and later approved by our social scientists. After the data is extracted, we aggregate the tweet contents that belong to every user on a weekly basis. Finally, we applied linear and logistic regression using SLEP, an open source sparse learning package to compute weekly score for users and mapping them to one of the 27 organizations on a radical or counter radical scale. Since, we are mapping users to organizations on a weekly basis, we are able to track user's behavior and important new events that triggered shifts among users between organizations. This thesis study can further be extended to identify topics and organization specific influential users and new users from various social media platforms like Facebook, YouTube etc. can easily be mapped to existing organizations on a radical or counter-radical scale.
ContributorsPoornachandran, Sathishkumar (Author) / Davulcu, Hasan (Thesis advisor) / Sen, Arunabha (Committee member) / Woodward, Mark (Committee member) / Arizona State University (Publisher)
Created2013
Description
Integrated photonics requires high gain optical materials in the telecom wavelength range for optical amplifiers and coherent light sources. Erbium (Er) containing materials are ideal candidates due to the 1.5 μm emission from Er3+ ions. However, the Er density in typical Er-doped materials is less than 1 x 1020 cm-3, thus limiting the maximum optical gain to a few dB/cm, too small to be useful for integrated photonics applications. Er compounds could potentially solve this problem since they contain much higher Er density. So far the existing Er compounds suffer from short lifetime and strong upconversion effects, mainly due to poor quality of crystals produced by various methods of thin film growth and deposition. This dissertation explores a new Er compound: erbium chloride silicate (ECS, Er3(SiO4)2Cl ) in the nanowire form, which facilitates the growth of high quality single crystals. Growth methods for such single crystal ECS nanowires have been established. Various structural and optical characterizations have been carried out. The high crystal quality of ECS material leads to a long lifetime of the first excited state of Er3+ ions up to 1 ms at Er density higher than 1022 cm-3. This Er lifetime-density product was found to be the largest among all Er containing materials. A unique integrating sphere method was developed to measure the absorption cross section of ECS nanowires from 440 to 1580 nm. Pump-probe experiments demonstrated a 644 dB/cm signal enhancement from a single ECS wire. It was estimated that such large signal enhancement can overcome the absorption to result in a net material gain, but not sufficient to compensate waveguide propagation loss. In order to suppress the upconversion process in ECS, Ytterbium (Yb) and Yttrium (Y) ions are introduced as substituent ions of Er in the ECS crystal structure to reduce Er density. While the addition of Yb ions only partially succeeded, erbium yttrium chloride silicate (EYCS) with controllable Er density was synthesized successfully. EYCS with 30 at. % Er was found to be the best. It shows the strongest PL emission at 1.5 μm, and thus can be potentially used as a high gain material.
ContributorsYin, Leijun (Author) / Ning, Cun-Zheng (Thesis advisor) / Chamberlin, Ralph (Committee member) / Yu, Hongbin (Committee member) / Menéndez, Jose (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2013
Description
This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along <110> compared to <100>. High strain fields were observed in <100> scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in <110> scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and elemental segregation. In a separate study, compositional instability is observed in lattice-matched InAlN films grown on GaN, for growth beyond a certain thickness. Beyond 200 nm of thickness, two sub-layers with different indium content are observed, the top one with lower indium content.
ContributorsHuang, Jingyi (Author) / Ponce, Fernando A. (Thesis advisor) / Carpenter, Ray W (Committee member) / Smith, David J. (Committee member) / Yu, Hongbin (Committee member) / Treacy, Michael Mj (Committee member) / Arizona State University (Publisher)
Created2013
Description
One dimensional (1D) and quasi-one dimensional quantum wires have been a subject of both theoretical and experimental interest since 1990s and before. Phenomena such as the "0.7 structure" in the conductance leave many open questions. In this dissertation, I study the properties and the internal electron states of semiconductor quantum wires with the path integral Monte Carlo (PIMC) method. PIMC is a tool for simulating many-body quantum systems at finite temperature. Its ability to calculate thermodynamic properties and various correlation functions makes it an ideal tool in bridging experiments with theories. A general study of the features interpreted by the Luttinger liquid theory and observed in experiments is first presented, showing the need for new PIMC calculations in this field. I calculate the DC conductance at finite temperature for both noninteracting and interacting electrons. The quantized conductance is identified in PIMC simulations without making the same approximation in the Luttinger model. The low electron density regime is subject to strong interactions, since the kinetic energy decreases faster than the Coulomb interaction at low density. An electron state called the Wigner crystal has been proposed in this regime for quasi-1D wires. By using PIMC, I observe the zig-zag structure of the Wigner crystal. The quantum fluctuations suppress the long range correla- tions, making the order short-ranged. Spin correlations are calculated and used to evaluate the spin coupling strength in a zig-zag state. I also find that as the density increases, electrons undergo a structural phase transition to a dimer state, in which two electrons of opposite spins are coupled across the two rows of the zig-zag. A phase diagram is sketched for a range of densities and transverse confinements. The quantum point contact (QPC) is a typical realization of quantum wires. I study the QPC by explicitly simulating a system of electrons in and around a Timp potential (Timp, 1992). Localization of a single electron in the middle of the channel is observed at 5 K, as the split gate voltage increases. The DC conductance is calculated, which shows the effect of the Coulomb interaction. At 1 K and low electron density, a state similar to the Wigner crystal is found inside the channel.
ContributorsLiu, Jianheng, 1982- (Author) / Shumway, John B (Thesis advisor) / Schmidt, Kevin E (Committee member) / Chen, Tingyong (Committee member) / Yu, Hongbin (Committee member) / Ros, Robert (Committee member) / Arizona State University (Publisher)
Created2012
Description
The pay-as-you-go economic model of cloud computing increases the visibility, traceability, and verifiability of software costs. Application developers must understand how their software uses resources when running in the cloud in order to stay within budgeted costs and/or produce expected profits. Cloud computing's unique economic model also leads naturally to an earn-as-you-go profit model for many cloud based applications. These applications can benefit from low level analyses for cost optimization and verification. Testing cloud applications to ensure they meet monetary cost objectives has not been well explored in the current literature. When considering revenues and costs for cloud applications, the resource economic model can be scaled down to the transaction level in order to associate source code with costs incurred while running in the cloud. Both static and dynamic analysis techniques can be developed and applied to understand how and where cloud applications incur costs. Such analyses can help optimize (i.e. minimize) costs and verify that they stay within expected tolerances. An adaptation of Worst Case Execution Time (WCET) analysis is presented here to statically determine worst case monetary costs of cloud applications. This analysis is used to produce an algorithm for determining control flow paths within an application that can exceed a given cost threshold. The corresponding results are used to identify path sections that contribute most to cost excess. A hybrid approach for determining cost excesses is also presented that is comprised mostly of dynamic measurements but that also incorporates calculations that are based on the static analysis approach. This approach uses operational profiles to increase the precision and usefulness of the calculations.
ContributorsBuell, Kevin, Ph.D (Author) / Collofello, James (Thesis advisor) / Davulcu, Hasan (Committee member) / Lindquist, Timothy (Committee member) / Sen, Arunabha (Committee member) / Arizona State University (Publisher)
Created2012
Description
Nitride semiconductors have wide applications in electronics and optoelectronics technologies. Understanding the nature of the optical recombination process and its effects on luminescence efficiency is important for the development of novel devices. This dissertation deals with the optical properties of nitride semiconductors, including GaN epitaxial layers and more complex heterostructures. The emission characteristics are examined by cathodoluminescence spectroscopy and imaging, and are correlated with the structural and electrical properties studied by transmission electron microscopy and electron holography. Four major areas are covered in this dissertation, which are described next. The effect of strain on the emission characteristics in wurtzite GaN has been studied. The values of the residual strain in GaN epilayers with different dislocation densities are determined by x-ray diffraction, and the relationship between exciton emission energy and the in-plane residual strain is demonstrated. It shows that the emission energy increases withthe magnitude of the in-plane compressive strain. The temperature dependence of the emission characteristics in cubic GaN has been studied. It is observed that the exciton emission and donor-acceptor pair recombination behave differently with temperature. The donor-bound exciton binding energy has been measured to be 13 meV from the temperature dependence of the emission spectrum. It is also found that the ionization energies for both acceptors and donors are smaller in cubic compared with hexagonal structures, which should contribute to higher doping efficiencies. A comprehensive study on the structural and optical properties is presented for InGaN/GaN quantum wells emitting in the blue, green, and yellow regions of the electromagnetic spectrum. Transmission electron microscopy images indicate the presence of indium inhomogeneties which should be responsible for carrier localization. The temperature dependence of emission luminescence shows that the carrier localization effects become more significant with increasing emission wavelength. On the other hand, the effect of non-radiative recombination on luminescence efficiency also varies with the emission wavelength. The fast increase of the non-radiative recombination rate with temperature in the green emitting QWs contributes to the lower efficiency compared with the blue emitting QWs. The possible saturation of non-radiative recombination above 100 K may explain the unexpected high emission efficiency for the yellow emitting QWs Finally, the effects of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells emitting in visible spectral regions have been studied. A significant improvement of the emission efficiency is observed, which is associated with a blue shift in the emission energy, a reduced recombination lifetime, an increased spatial homogeneity in the luminescence, and a weaker internal field across the quantum wells. These are explained by a partial strain relaxation introduced by the InGaN underlayer, which is measured by reciprocal space mapping of the x-ray diffraction intensity.
ContributorsLi, Di (Author) / Ponce, Fernando (Thesis advisor) / Culbertson, Robert (Committee member) / Yu, Hongbin (Committee member) / Shumway, John (Committee member) / Menéndez, Jose (Committee member) / Arizona State University (Publisher)
Created2012
Description
Communication networks, both wired and wireless, are expected to have a certain level of fault-tolerance capability.These networks are also expected to ensure a graceful degradation in performance when some of the network components fail. Traditional studies on fault tolerance in communication networks, for the most part, make no assumptions regarding the location of node/link faults, i.e., the faulty nodes and links may be close to each other or far from each other. However, in many real life scenarios, there exists a strong spatial correlation among the faulty nodes and links. Such failures are often encountered in disaster situations, e.g., natural calamities or enemy attacks. In presence of such region-based faults, many of traditional network analysis and fault-tolerant metrics, that are valid under non-spatially correlated faults, are no longer applicable. To this effect, the main thrust of this research is design and analysis of robust networks in presence of such region-based faults. One important finding of this research is that if some prior knowledge is available on the maximum size of the region that might be affected due to a region-based fault, this piece of knowledge can be effectively utilized for resource efficient design of networks. It has been shown in this dissertation that in some scenarios, effective utilization of this knowledge may result in substantial saving is transmission power in wireless networks. In this dissertation, the impact of region-based faults on the connectivity of wireless networks has been studied and a new metric, region-based connectivity, is proposed to measure the fault-tolerance capability of a network. In addition, novel metrics, such as the region-based component decomposition number(RBCDN) and region-based largest component size(RBLCS) have been proposed to capture the network state, when a region-based fault disconnects the network. Finally, this dissertation presents efficient resource allocation techniques that ensure tolerance against region-based faults, in distributed file storage networks and data center networks.
ContributorsBanerjee, Sujogya (Author) / Sen, Arunabha (Thesis advisor) / Xue, Guoliang (Committee member) / Richa, Andrea (Committee member) / Hurlbert, Glenn (Committee member) / Arizona State University (Publisher)
Created2013
Description
Data mining is increasing in importance in solving a variety of industry problems. Our initiative involves the estimation of resource requirements by skill set for future projects by mining and analyzing actual resource consumption data from past projects in the semiconductor industry. To achieve this goal we face difficulties like data with relevant consumption information but stored in different format and insufficient data about project attributes to interpret consumption data. Our first goal is to clean the historical data and organize it into meaningful structures for analysis. Once the preprocessing on data is completed, different data mining techniques like clustering is applied to find projects which involve resources of similar skillsets and which involve similar complexities and size. This results in "resource utilization templates" for groups of related projects from a resource consumption perspective. Then project characteristics are identified which generate this diversity in headcounts and skillsets. These characteristics are not currently contained in the data base and are elicited from the managers of historical projects. This represents an opportunity to improve the usefulness of the data collection system for the future. The ultimate goal is to match the product technical features with the resource requirement for projects in the past as a model to forecast resource requirements by skill set for future projects. The forecasting model is developed using linear regression with cross validation of the training data as the past project execution are relatively few in number. Acceptable levels of forecast accuracy are achieved relative to human experts' results and the tool is applied to forecast some future projects' resource demand.
ContributorsBhattacharya, Indrani (Author) / Sen, Arunabha (Thesis advisor) / Kempf, Karl G. (Thesis advisor) / Liu, Huan (Committee member) / Arizona State University (Publisher)
Created2013
Description
This thesis summarizes modeling and simulation of plasmonic waveguides and nanolasers. The research includes modeling of dielectric constants of doped semiconductor as a potential plasmonic material, simulation of plasmonic waveguides with different configurations and geometries, simulation and design of plasmonic nanolasers. In the doped semiconductor part, a more accurate model accounting for dielectric constant of doped InAs was proposed. In the model, Interband transitions accounted for by Adachi's model considering Burstein-Moss effect and free electron effect governed by Drude model dominate in different spectral regions. For plasmonic waveguide part, Insulator-Metal-Insulator (IMI) waveguide, silver nanowire waveguide with and without substrate, Metal-Semiconductor-Metal (MSM) waveguide and Metal-Insulator-Semiconductor-Insulator-Metal (MISIM) waveguide were investigated respectively. Modal analysis was given for each part. Lastly, a comparative study of plasmonic and optical modes in an MSM disk cavity was performed by FDTD simulation for room temperature at the telecommunication wavelength. The results show quantitatively that plasmonic modes have advantages over optical modes in the scalability down to small size and the cavity Quantum Electrodynamics(QED) effects due to the possibility of breaking the diffraction limit. Surprisingly for lasing characteristics, though plasmonic modes have large loss as expected, minimal achievable threshold can be attained for whispering gallery plasmonic modes with azimuthal number of 2 by optimizing cavity design at 1.55µm due to interplay of metal loss and radiation loss.
ContributorsWang, Haotong (Author) / Ning, Cunzheng (Thesis advisor) / Palais, Joseph (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2014