ABSTRACT Ongoing research into wireless transceivers in the 60 GHz band is required to address the demand for high data rate communications systems at a frequency where signal propagation is challenging even over short ranges. This thesis proposes a mixer architecture in Complementary Metal Oxide Semiconductor (CMOS) technology that uses a voltage controlled oscillator (VCO) operating at a fractional multiple of the desired output signal. The proposed topology is different from conventional subharmonic mixing in that the oscillator phase generation circuitry usually required for such a circuit is unnecessary. Analysis and simulations are performed on the proposed mixer circuit in an IBM 90 nm RF process on a 1.2 V supply. A typical RF transmitter system is considered in determining the block requirements needed for the mixer to meet the IEEE 802.11ad 60 GHz Draft Physical Layer Specification. The proposed circuit has a conversion loss of 21 dB at 60 GHz with a 5 dBm LO power at 20 GHz. Input-referred third-order intercept point (IIP3) is 2.93 dBm. The gain and linearity of the proposed mixer are sufficient for Orthogonal Frequency Division Multiplexing (OFDM) modulation at 60 GHz with a transmitted data rate of over 4 Gbps.

A dual-channel directional digital hearing aid (DHA) front end using Micro Electro Mechanical System (MEMS) microphones and an adaptive-power analog processing signal chain is presented. The analog front end consists of a double differential amplifier (DDA) based capacitance to voltage conversion circuit, 40dB variable gain amplifier (VGA) and a continuous time sigma delta analog to digital converter (CT - ΣΔ ADC). Adaptive power scaling of the 4th order CT - ΣΔ achieves 68dB SNR at 120μW, which can be scaled down to 61dB SNR at 67μW. This power saving will increse the battery life of the DHA.

Non-volatile memories (NVM) are widely used in modern electronic devices due to their non-volatility, low static power consumption and high storage density. While Flash memories are the dominant NVM technology, resistive memories such as phase change access memory (PRAM) and spin torque transfer random access memory (STT-MRAM) are gaining ground. All these technologies suffer from reliability degradation due to process variations, structural limits and material property shift. To address the reliability concerns of these NVM technologies, multi-level low cost solutions are proposed for each of them. My approach consists of first building a comprehensive error model. Next the error characteristics are exploited to develop low cost multi-level strategies to compensate for the errors. For instance, for NAND Flash memory, I first characterize errors due to threshold voltage variations as a function of the number of program/erase cycles. Next a flexible product code is designed to migrate to a stronger ECC scheme as program/erase cycles increases. An adaptive data refresh scheme is also proposed to improve memory reliability with low energy cost for applications with different data update frequencies. For PRAM, soft errors and hard errors models are built based on shifts in the resistance distributions. Next I developed a multi-level error control approach involving bit interleaving and subblock flipping at the architecture level, threshold resistance tuning at the circuit level and programming current profile tuning at the device level. This approach helped reduce the error rate significantly so that it was now sufficient to use a low cost ECC scheme to satisfy the memory reliability constraint. I also studied the reliability of a PRAM+DRAM hybrid memory system and analyzed the tradeoffs between memory performance, programming energy and lifetime. For STT-MRAM, I first developed an error model based on process variations. I developed a multi-level approach to reduce the error rates that consisted of increasing the W/L ratio of the access transistor, increasing the voltage difference across the memory cell and adjusting the current profile during write operation. This approach enabled use of a low cost BCH based ECC scheme to achieve very low block failure rates.

The design and development of analog/mixed-signal (AMS) integrated circuits (ICs) is becoming increasingly expensive, complex, and lengthy. Rapid prototyping and emulation of analog ICs will be significant in the design and testing of complex analog systems. A new approach, Programmable ANalog Device Array (PANDA) that maps any AMS design problem to a transistor-level programmable hardware, is proposed. This approach enables fast system level validation and a reduction in post-Silicon bugs, minimizing design risk and cost. The unique features of the approach include 1) transistor-level programmability that emulates each transistor behavior in an analog design, achieving very fine granularity of reconfiguration; 2) programmable switches that are treated as a design component during analog transistor emulating, and optimized with the reconfiguration matrix; 3) compensation of AC performance degradation through boosting the bias current. Based on these principles, a digitally controlled PANDA platform is designed at 45nm node that can map AMS modules across 22nm to 90nm technology nodes. A systematic emulation approach to map any analog transistor to 45nm PANDA cell is proposed, which achieves transistor level matching accuracy of less than 5% for ID and less than 10% for Rout and Gm. Circuit level analog metrics of a voltage-controlled oscillator (VCO) emulated by PANDA, match to those of the original designs in 22nm and 90nm nodes with less than a 5% error. Several other 90nm and 22nm analog blocks are successfully emulated by the 45nm PANDA platform, including a folded-cascode operational amplifier and a sample-and-hold module (S/H). Further capabilities of PANDA are demonstrated by the first full-chip silicon of PANDA which is implemented on 65nm process This system consists of a 24×25 cell array, reconfigurable interconnect and configuration memory. The voltage and current reference circuits, op amps and a VCO with a phase interpolation circuit are emulated by PANDA.

With increasing demand for System on Chip (SoC) and System in Package (SiP) design in computer and communication technologies, integrated inductor which is an essential passive component has been widely used in numerous integrated circuits (ICs) such as in voltage regulators and RF circuits. In this work, soft ferromagnetic core material, amorphous Co-Zr-Ta-B, was incorporated into on-chip and in-package inductors in order to scale down inductors and improve inductors performance in both inductance density and quality factor. With two layers of 500 nm Co-Zr-Ta-B films a 3.5X increase in inductance and a 3.9X increase in quality factor over inductors without magnetic films were measured at frequencies as high as 1 GHz. By laminating technology, up to 9.1X increase in inductance and more than 5X increase in quality factor (Q) were obtained from stripline inductors incorporated with 50 nm by 10 laminated films with a peak Q at 300 MHz. It was also demonstrated that this peak Q can be pushed towards high frequency as far as 1GHz by a combination of patterning magnetic films into fine bars and laminations. The role of magnetic vias in magnetic flux and eddy current control was investigated by both simulation and experiment using different patterning techniques and by altering the magnetic via width. Finger-shaped magnetic vias were designed and integrated into on-chip RF inductors improving the frequency of peak quality factor from 400 MHz to 800 MHz without sacrificing inductance enhancement. Eddy current and magnetic flux density in different areas of magnetic vias were analyzed by HFSS 3D EM simulation. With optimized magnetic vias, high frequency response of up to 2 GHz was achieved. Furthermore, the effect of applied magnetic field on on-chip inductors was investigated for high power applications. It was observed that as applied magnetic field along the hard axis (HA) increases, inductance maintains similar value initially at low fields, but decreases at larger fields until the magnetic films become saturated. The high frequency quality factor showed an opposite trend which is correlated to the reduction of ferromagnetic resonant absorption in the magnetic film. In addition, experiments showed that this field-dependent inductance change varied with different patterned magnetic film structures, including bars/slots and fingers structures. Magnetic properties of Co-Zr-Ta-B films on standard organic package substrates including ABF and polyimide were also characterized. Effects of substrate roughness and stress were analyzed and simulated which provide strategies for integrating Co-Zr-Ta-B into package inductors and improving inductors performance. Stripline and spiral inductors with Co-Zr-Ta-B films were fabricated on both ABF and polyimide substrates. Maximum 90% inductance increase in hundreds MHz frequency range were achieved in stripline inductors which are suitable for power delivery applications. Spiral inductors with Co-Zr-Ta-B films showed 18% inductance increase with quality factor of 4 at frequency up to 3 GHz.

The high cut-off frequency of deep sub-micron CMOS technologies has enabled the integration of radio frequency (RF) transceivers with digital circuits. However, the challenging point is the integration of RF power amplifiers, mainly due to the low breakdown voltage of CMOS transistors. Silicon-on-insulator (SOI) metal semiconductor field effect transistors (MESFETs) have been introduced to remedy the limited headroom concern in CMOS technologies. The MESFETs presented in this thesis have been fabricated on different SOI-CMOS processes without making any change to the standard fabrication steps and offer 2-30 times higher breakdown voltage than the MOSFETs on the same process. This thesis explains the design steps of high efficiency and wideband RF transmitters using the proposed SOI-CMOS compatible MESFETs. This task involves DC and RF characterization of MESFET devices, along with providing a compact Spice model for simulation purposes. This thesis presents the design of several SOI-MESFET RF power amplifiers operating at 433, 900 and 1800 MHz with ~40% bandwidth. Measurement results show a peak power added efficiency (PAE) of 55% and a peak output power of 22.5 dBm. The RF-PAs were designed to operate in Class-AB mode to minimize the linearity degradation. Class-AB power amplifiers lead to poor power added efficiency, especially when fed with signals with high peak to average power ratio (PAPR) such as wideband code division multiple access (W-CDMA). Polar transmitters have been introduced to improve the efficiency of RF-PAs at backed-off powers. A MESFET based envelope tracking (ET) polar transmitter was designed and measured. A low drop-out voltage regulator (LDO) was used as the supply modulator of this polar transmitter. MESFETs are depletion mode devices; therefore, they can be configured in a source follower configuration to have better stability and higher bandwidth that MOSFET based LDOs. Measurement results show 350 MHz bandwidth while driving a 10 pF capacitive load. A novel polar transmitter is introduced in this thesis to alleviate some of the limitations associated with polar transmitters. The proposed architecture uses the backgate terminal of a partially depleted transistor on SOI process, which relaxes the bandwidth and efficiency requirements of the envelope amplifier in a polar transmitter. The measurement results of the proposed transmitter demonstrate more than three times PAE improvement at 6-dB backed-off output power, compared to the traditional RF transmitters.

Distributed estimation uses many inexpensive sensors to compose an accurate estimate of a given parameter. It is frequently implemented using wireless sensor networks. There have been several studies on optimizing power allocation in wireless sensor networks used for distributed estimation, the vast majority of which assume linear radio-frequency amplifiers. Linear amplifiers are inherently inefficient, so in this dissertation nonlinear amplifiers are examined to gain efficiency while operating distributed sensor networks. This research presents a method to boost efficiency by operating the amplifiers in the nonlinear region of operation. Operating amplifiers nonlinearly presents new challenges. First, nonlinear amplifier characteristics change across manufacturing process variation, temperature, operating voltage, and aging. Secondly, the equations conventionally used for estimators and performance expectations in linear amplify-and-forward systems fail. To compensate for the first challenge, predistortion is utilized not to linearize amplifiers but rather to force them to fit a common nonlinear limiting amplifier model close to the inherent amplifier performance. This minimizes the power impact and the training requirements for predistortion. Second, new estimators are required that account for transmitter nonlinearity. This research derives analytically and confirms via simulation new estimators and performance expectation equations for use in nonlinear distributed estimation. An additional complication when operating nonlinear amplifiers in a wireless environment is the influence of varied and potentially unknown channel gains. The impact of these varied gains and both measurement and channel noise sources on estimation performance are analyzed in this paper. Techniques for minimizing the estimate variance are developed. It is shown that optimizing transmitter power allocation to minimize estimate variance for the most-compressed parameter measurement is equivalent to the problem for linear sensors. Finally, a method for operating distributed estimation in a multipath environment is presented that is capable of developing robust estimates for a wide range of Rician K-factors. This dissertation demonstrates that implementing distributed estimation using nonlinear sensors can boost system efficiency and is compatible with existing techniques from the literature for boosting efficiency at the system level via sensor power allocation. Nonlinear transmitters work best when channel gains are known and channel noise and receiver noise levels are low.

Switch mode DC/DC converters are suited for battery powered applications, due to their high efficiency, which help in conserving the battery lifetime. Fixed Frequency PWM based converters, which are generally used for these applications offer good voltage regulation, low ripple and excellent efficiency at high load currents. However at light load currents, fixed frequency PWM converters suffer from poor efficiencies The PFM control offers higher efficiency at light loads at the cost of a higher ripple. The PWM has a poor efficiency at light loads but good voltage ripple characteristics, due to a high switching frequency. To get the best of both control modes, both loops are used together with the control switched from one loop to another based on the load current. Such architectures are referred to as hybrid converters. While transition from PFM to PWM loop can be made by estimating the average load current, transition from PFM to PWM requires voltage or peak current sensing. This theses implements a hysteretic PFM solution for a synchronous buck converter with external MOSFET's, to achieve efficiencies of about 80% at light loads. As the PFM loop operates independently of the PWM loop, a transition circuit for automatically transitioning from PFM to PWM is implemented. The transition circuit is implemented digitally without needing any external voltage or current sensing circuit.

ABSTRACT The D flip flop acts as a sequencing element while designing any pipelined system. Radiation Hardening by Design (RHBD) allows hardened circuits to be fabricated on commercially available CMOS manufacturing process. Recently, single event transients (SET's) have become as important as single event upset (SEU) in radiation hardened high speed digital designs. A novel temporal pulse based RHBD flip-flop design is presented. Temporally delayed pulses produced by a radiation hardened pulse generator design samples the data in three redundant pulse latches. The proposed RHBD flip-flop has been statistically designed and fabricated on 90 nm TSMC LP process. Detailed simulations of the flip-flop operation in both normal and radiation environments are presented. Spatial separation of critical nodes for the physical design of the flip-flop is carried out for mitigating multi-node charge collection upsets. The proposed flip-flop is also used in commercial CAD flows for high performance chip designs. The proposed flip-flop is used in the design and auto-place-route (APR) of an advanced encryption system and the metrics analyzed.