Matching Items (2)
Description
This simulation study compared the utility of various discrepancy measures within a posterior predictive model checking (PPMC) framework for detecting different types of data-model misfit in multidimensional Bayesian network (BN) models. The investigated conditions were motivated by an applied research program utilizing an operational complex performance assessment within a digital-simulation educational context grounded in theories of cognition and learning. BN models were manipulated along two factors: latent variable dependency structure and number of latent classes. Distributions of posterior predicted p-values (PPP-values) served as the primary outcome measure and were summarized in graphical presentations, by median values across replications, and by proportions of replications in which the PPP-values were extreme. An effect size measure for PPMC was introduced as a supplemental numerical summary to the PPP-value. Consistent with previous PPMC research, all investigated fit functions tended to perform conservatively, but Standardized Generalized Dimensionality Discrepancy Measure (SGDDM), Yen's Q3, and Hierarchy Consistency Index (HCI) only mildly so. Adequate power to detect at least some types of misfit was demonstrated by SGDDM, Q3, HCI, Item Consistency Index (ICI), and to a lesser extent Deviance, while proportion correct (PC), a chi-square-type item-fit measure, Ranked Probability Score (RPS), and Good's Logarithmic Scale (GLS) were powerless across all investigated factors. Bivariate SGDDM and Q3 were found to provide powerful and detailed feedback for all investigated types of misfit.
ContributorsCrawford, Aaron (Author) / Levy, Roy (Thesis advisor) / Green, Samuel (Committee member) / Thompson, Marilyn (Committee member) / Arizona State University (Publisher)
Created2014
Description
Wide bandgap semiconductors, also known as WBG semiconductors are materials which have larger bandgaps than conventional semiconductors such as Si or GaAs. They permit devices to operate at much higher voltages, frequencies and temperatures. They are the key material used to make LEDs, lasers, radio frequency applications, military applications, and power electronics. Their intrinsic qualities make them promising for next-generation devices for general semiconductor use. Their ability to handle higher power density is particularly attractive for attempts to sustain Moore's law, as conventional technologies appear to be reaching a bottleneck. Apart from WBG materials, ultra-wide bandgap (UWBG) materials, such as Ga2O3, AlN, diamond, or BN, are also attractive since they have even more extreme properties. Although this field is relatively new, which still remains a lot of effort to study and investigate, people can still expect that these materials could be the main characters for more advanced applications in the near future.
In the dissertation, three topics with power devices made by WBG or UWBG semiconductors were introduced. In chapter 1, a generally background knowledge introduction is given. This helps the reader to learn current research focuses. In chapter 2, a comprehensive study of temperature-dependent characteristics of Ga2O3 SBDs with highly-doped substrate is demonstrated. A modified thermionic emission model over an inhomogeneous barrier with a voltage-dependent barrier height is investigated. Besides, the mechanism of surface leakage current is also discussed. These results are beneficial for future developments of low-loss β-Ga2O3 electronics and optoelectronics. In chapter 3, vertical GaN Schottky barrier diodes (SBDs) with floating metal rings (FMRs) as edge termination structures on bulk GaN substrates was introduced. This work represents a useful reference for the FMR termination design for GaN power devices. In chapter 4, AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) fabricated on Si substrates with a 10 nm boron nitride (BN) layer as gate dielectric was demonstrated. The material characterization was investigated by X-ray photoelectric spectroscopy (XPS) and UV photoelectron spectroscopy (UPS). And the gate leakage current mechanisms were also investigated by temperature-dependent current-voltage measurements.
Although still in its infancy, past and projected future progress of electronic designs will ultimately achieve this very goal that WBG and UWBG semiconductors will be indispensable for today and future’s science, technologies and society.
ContributorsYang, Tsung-Han (Author) / Zhao, Yuji (Thesis advisor) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Nemanich, Robert (Committee member) / Arizona State University (Publisher)
Created2021