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Description
Nanowires are 1D rod-like structures which are regarded as the basis for future technologies. III-V nanowires have attracted immense attention because of their stability, crystal quality and wide use. In this work, I focus on the growth and characterization of III-V semiconductor nanowires, in particular GaP, InP and

Nanowires are 1D rod-like structures which are regarded as the basis for future technologies. III-V nanowires have attracted immense attention because of their stability, crystal quality and wide use. In this work, I focus on the growth and characterization of III-V semiconductor nanowires, in particular GaP, InP and InGaP alloys. These nanowires were grown using a hot wall CVD(Chemical Vapor Deposition) setup and are characterized using SEM (Scanning Electron Microscope), EDX (Energy Dispersive X-ray Spectroscopy) and PL (Photoluminescence) techniques.



In the first chapter, Indium Phosphide nanowires were grown using elemental sources (In and P powders). I consider the various kinds of InP morphologies grown using this method. The effect of source temperature on the stoichiometry and optical properties of nanowires is studied. Lasing behavior has been seen in InP nanostructures, showing superior material quality of InP.

InGaP alloy nanowires were grown using compound and elemental sources. Nanowires grown using compound sources have significant oxide incorporation and showed kinky morphology. Nanowires grown using elemental sources had no oxide and showed better optical quality. Also, these samples showed a tunable alloy composition across the entire substrate covering more than 50% of the InGaP alloy system. Integrated intensity showed that the bandgap of the nanowires changed from indirect to direct bandgap with increasing Indium composition. InGaP alloy nanowires were compared with Gallium Phosphide nanowires in terms of PL emission, using InGaP nanowires it is possible to grow nanowires free of defects and oxygen impurities, which are commonly encountered in GaP nanowires.
ContributorsRanga, Praneeth (Author) / Ning, Cun-Zheng (Thesis advisor) / Palais, Joseph (Committee member) / Tao, Meng (Committee member) / Arizona State University (Publisher)
Created2016
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Description
Since the advent of High Impedance Surfaces (HISs) and metasurfaces, researchers

have proposed many low profile antenna configurations. HISs possess in-phase reflection, which reinforces the radiation, and enhances the directivity and matching bandwidth of radiating elements. Most of the proposed dipole and loop element designs that have used HISs as a

Since the advent of High Impedance Surfaces (HISs) and metasurfaces, researchers

have proposed many low profile antenna configurations. HISs possess in-phase reflection, which reinforces the radiation, and enhances the directivity and matching bandwidth of radiating elements. Most of the proposed dipole and loop element designs that have used HISs as a ground plane, have attained a maximum directivity of 8 dBi. While HISs are more attractive ground planes for low profile antennas, these HISs result in a low directivity as compared to PEC ground planes. Various studies have shown that Perfect Electric Conductor (PEC) ground planes are capable of achieving higher directivity, at the expense of matching efficiency, when the spacing

between the radiating element and the PEC ground plane is less than 0.25 lambda. To establish an efficient ground plane for low profile applications, PEC (Perfect Electric Conductor) and PMC (Perfect Magnetic Conductor) ground planes are examined in the vicinity of electric and magnetic radiating elements. The limitation of the two ground planes, in terms of radiation efficiency and the impedance matching, are discussed. Far-field analytical formulations are derived and the results are compared with full-wave EM simulations performed using the High-Frequency Structure Simulator (HFSS). Based on PEC and PMC designs, two engineered ground planes are proposed.

The designed ground planes depend on two metasurface properties; namely in-phase reflection and excitation of surface waves. Two ground plane geometries are considered. The first one is designed for a circular loop radiating element, which utilizes a

circular HIS ring deployed on a circular ground plane. The integration of the loop element with the circular HIS ground plane enhances the maximum directivity up to 10.5 dB with a 13% fractional bandwidth. The second ground plane is designed for a square loop radiating element. Unlike the first design, rectangular HIS patches are utilized to control the excitation of surface waves in the principal planes. The final design operates from 3.8 to 5 GHz (27% fractional bandwidth) with a stable broadside maximum realized gain up to 11.9 dBi. To verify the proposed designs, a prototype was fabricated and measurements were conducted. A good agreement between simulations and measurements was observed. Furthermore, multiple square ring elements are embedded within the periodic patches to form a surface wave planar antenna array. Linear and circular polarizations are proposed and compared to a conventional square ring array. The implementation of periodic patches results in a better matching bandwidth and higher broadside gain compared to a conventional array.
ContributorsAlharbi, Mohammed (Author) / Balanis, Constantine A (Thesis advisor) / Aberle, James T (Committee member) / Palais, Joseph (Committee member) / Trichopoulos, Georgios C (Committee member) / Arizona State University (Publisher)
Created2020