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Description
This work is focused on modeling the reliability concerns in GaN HEMT technology. The two main reliability concerns in GaN HEMTs are electromechanical coupling and current collapse. A theoretical model was developed to model the piezoelectric polarization charge dependence on the applied gate voltage. As the sheet electron density in

This work is focused on modeling the reliability concerns in GaN HEMT technology. The two main reliability concerns in GaN HEMTs are electromechanical coupling and current collapse. A theoretical model was developed to model the piezoelectric polarization charge dependence on the applied gate voltage. As the sheet electron density in the channel increases, the influence of electromechanical coupling reduces as the electric field in the comprising layers reduces. A Monte Carlo device simulator that implements the theoretical model was developed to model the transport in GaN HEMTs. It is observed that with the coupled formulation, the drain current degradation in the device varies from 2%-18% depending on the gate voltage. Degradation reduces with the increase in the gate voltage due to the increase in the electron gas density in the channel. The output and transfer characteristics match very well with the experimental data. An electro-thermal device simulator was developed coupling the Monte Caro-Poisson solver with the energy balance solver for acoustic and optical phonons. An output current degradation of around 2-3 % at a drain voltage of 5V due to self-heating was observed. It was also observed that the electrostatics near the gate to drain region of the device changes due to the hot spot created in the device from self heating. This produces an electric field in the direction of accelerating the electrons from the channel to surface states. This will aid to the current collapse phenomenon in the device. Thus, the electric field in the gate to drain region is very critical for reliable performance of the device. Simulations emulating the charging of the surface states were also performed and matched well with experimental data. Methods to improve the reliability performance of the device were also investigated in this work. A shield electrode biased at source potential was used to reduce the electric field in the gate to drain extension region. The hot spot position was moved away from the critical gate to drain region towards the drain as the shield electrode length and dielectric thickness were being altered.
ContributorsPadmanabhan, Balaji (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen M (Committee member) / Alford, Terry L. (Committee member) / Venkatraman, Prasad (Committee member) / Arizona State University (Publisher)
Created2013
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Description
As one of the most promising materials for high capacity electrode in next generation of lithium ion batteries, silicon has attracted a great deal of attention in recent years. Advanced characterization techniques and atomic simulations helped to depict that the lithiation/delithiation of silicon electrode involves processes including large volume change

As one of the most promising materials for high capacity electrode in next generation of lithium ion batteries, silicon has attracted a great deal of attention in recent years. Advanced characterization techniques and atomic simulations helped to depict that the lithiation/delithiation of silicon electrode involves processes including large volume change (anisotropic for the initial lithiation of crystal silicon), plastic flow or softening of material dependent on composition, electrochemically driven phase transformation between solid states, anisotropic or isotropic migration of atomic sharp interface, and mass diffusion of lithium atoms. Motivated by the promising prospect of the application and underlying interesting physics, mechanics coupled with multi-physics of silicon electrodes in lithium ion batteries is studied in this dissertation. For silicon electrodes with large size, diffusion controlled kinetics is assumed, and the coupled large deformation and mass transportation is studied. For crystal silicon with small size, interface controlled kinetics is assumed, and anisotropic interface reaction is studied, with a geometry design principle proposed. As a preliminary experimental validation, enhanced lithiation and fracture behavior of silicon pillars via atomic layer coatings and geometry design is studied, with results supporting the geometry design principle we proposed based on our simulations. Through the work documented here, a consistent description and understanding of the behavior of silicon electrode is given at continuum level and some insights for the future development of the silicon electrode are provided.
ContributorsAn, Yonghao (Author) / Jiang, Hanqing (Thesis advisor) / Chawla, Nikhilesh (Committee member) / Phelan, Patrick (Committee member) / Wang, Yinming (Committee member) / Yu, Hongyu (Committee member) / Arizona State University (Publisher)
Created2014
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Description
Unmanned aerial vehicles have received increased attention in the last decade due to their versatility, as well as the availability of inexpensive sensors (e.g. GPS, IMU) for their navigation and control. Multirotor vehicles, specifically quadrotors, have formed a fast growing field in robotics, with the range of applications spanning from

Unmanned aerial vehicles have received increased attention in the last decade due to their versatility, as well as the availability of inexpensive sensors (e.g. GPS, IMU) for their navigation and control. Multirotor vehicles, specifically quadrotors, have formed a fast growing field in robotics, with the range of applications spanning from surveil- lance and reconnaissance to agriculture and large area mapping. Although in most applications single quadrotors are used, there is an increasing interest in architectures controlling multiple quadrotors executing a collaborative task. This thesis introduces a new concept of control involving more than one quadrotors, according to which two quadrotors can be physically coupled in mid-flight. This concept equips the quadro- tors with new capabilities, e.g. increased payload or pursuit and capturing of other quadrotors. A comprehensive simulation of the approach is built to simulate coupled quadrotors. The dynamics and modeling of the coupled system is presented together with a discussion regarding the coupling mechanism, impact modeling and additional considerations that have been investigated. Simulation results are presented for cases of static coupling as well as enemy quadrotor pursuit and capture, together with an analysis of control methodology and gain tuning. Practical implementations are introduced as results show the feasibility of this design.
ContributorsLarsson, Daniel (Author) / Artemiadis, Panagiotis (Thesis advisor) / Marvi, Hamidreza (Committee member) / Berman, Spring (Committee member) / Arizona State University (Publisher)
Created2016
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Description
In this paper, at first, analytical formulation of J-integral for a non-local particle model (VCPM) using atomic scale finite element method is proposed for fracture analysis of 2D solids. A brief review of classical continuum-based J-integral and anon-local lattice particle method is given first. Following this, detailed derivation for the

In this paper, at first, analytical formulation of J-integral for a non-local particle model (VCPM) using atomic scale finite element method is proposed for fracture analysis of 2D solids. A brief review of classical continuum-based J-integral and anon-local lattice particle method is given first. Following this, detailed derivation for the J-integral in discrete particle system is given using the energy equivalence and stress-tensor mapping between the continuum mechanics and lattice-particle system.With the help of atomistic finite element method, the J-integral is expressed as a summation of the corresponding terms in the particle system.

Secondly, a coupling algorithm between a non-local particle method (VCPM) and the classical finite element method (FEM) is discussed to gain the advantages of both methods for fracture analysis in large structures. In this algorithm, the discrete VCPM particle and the continuum FEM domains are solved within a unified theoretical framework. A transitional element technology is developed to smoothly link the 10-particles element with the traditional FEM elements to guaranty the continuity and consistency at the coupling interface. An explicit algorithm for static simulation is developed.

Finally, numerical examples are illustrated for the accuracy, convergence, and path-independence of the derived J-integral formulation. Discussions on the comparison with alternative estimation methods and potential application for fracture simulation are given. The accuracy and efficiency of the coupling algorithm are tested by several benchmark problems such as static crack simulation.
ContributorsZope, Jayesh (Author) / Liu, Yongming (Thesis advisor) / Oswald, Jay (Committee member) / Jiang, Hanqing (Committee member) / Arizona State University (Publisher)
Created2016