Matching Items (2)
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- All Subjects: Switching power supplies
- Genre: Masters Thesis
- Creators: Kiaei, Sayfe
- Creators: Peterson, Cory
- Status: Published
Description
Efficiency of components is an ever increasing area of importance to portable applications, where a finite battery means finite operating time. Higher efficiency devices need to be designed that don't compromise on the performance that the consumer has come to expect. Class D amplifiers deliver on the goal of increased efficiency, but at the cost of distortion. Class AB amplifiers have low efficiency, but high linearity. By modulating the supply voltage of a Class AB amplifier to make a Class H amplifier, the efficiency can increase while still maintaining the Class AB level of linearity. A 92dB Power Supply Rejection Ratio (PSRR) Class AB amplifier and a Class H amplifier were designed in a 0.24um process for portable audio applications. Using a multiphase buck converter increased the efficiency of the Class H amplifier while still maintaining a fast response time to respond to audio frequencies. The Class H amplifier had an efficiency above the Class AB amplifier by 5-7% from 5-30mW of output power without affecting the total harmonic distortion (THD) at the design specifications. The Class H amplifier design met all design specifications and showed performance comparable to the designed Class AB amplifier across 1kHz-20kHz and 0.01mW-30mW. The Class H design was able to output 30mW into 16Ohms without any increase in THD. This design shows that Class H amplifiers merit more research into their potential for increasing efficiency of audio amplifiers and that even simple designs can give significant increases in efficiency without compromising linearity.
ContributorsPeterson, Cory (Author) / Bakkaloglu, Bertan (Thesis advisor) / Barnaby, Hugh (Committee member) / Kiaei, Sayfe (Committee member) / Arizona State University (Publisher)
Created2013
Description
The photovoltaic systems used to convert solar energy to electricity pose a multitude of design and implementation challenges, including energy conversion efficiency, partial shading effects, and power converter efficiency. Using power converters for Distributed Maximum Power Point Tracking (DMPPT) is a well-known architecture to significantly reduce power loss associated with mismatched panels. Sub-panel-level DMPPT is shown to have up to 14.5% more annual energy yield than panel-level DMPPT, and requires an efficient medium power converter.
This research aims at implementing a highly efficient power management system at sub-panel level with focus on system cost and form-factor. Smaller form-factor motivates increased converter switching frequencies to significantly reduce the size of converter passives and substantially improve transient performance. But, currently available power MOSFETs put a constraint on the highest possible switching frequency due to increased switching losses. The solution is Gallium Nitride based power devices, which deliver figure of merit (FOM) performance at least an order of magnitude higher than existing silicon MOSFETs. Low power loss, high power density, low cost and small die sizes are few of the qualities that make e-GaN superior to its Si counterpart. With careful design, e-GaN can enable a 20-30% improvement in power stage efficiency compared to converters using Si MOSFETs.
The main objective of this research is to develop a highly integrated, high efficiency, 20MHz, hybrid GaN-CMOS DC-DC MPPT converter for a 12V/5A sub-panel. Hard and soft switching boost converter topologies are investigated within this research, and an innovative CMOS gate drive technique for efficiently driving an e-GaN power stage is presented in this work. The converter controller also employs a fast converging analog MPPT control technique.
This research aims at implementing a highly efficient power management system at sub-panel level with focus on system cost and form-factor. Smaller form-factor motivates increased converter switching frequencies to significantly reduce the size of converter passives and substantially improve transient performance. But, currently available power MOSFETs put a constraint on the highest possible switching frequency due to increased switching losses. The solution is Gallium Nitride based power devices, which deliver figure of merit (FOM) performance at least an order of magnitude higher than existing silicon MOSFETs. Low power loss, high power density, low cost and small die sizes are few of the qualities that make e-GaN superior to its Si counterpart. With careful design, e-GaN can enable a 20-30% improvement in power stage efficiency compared to converters using Si MOSFETs.
The main objective of this research is to develop a highly integrated, high efficiency, 20MHz, hybrid GaN-CMOS DC-DC MPPT converter for a 12V/5A sub-panel. Hard and soft switching boost converter topologies are investigated within this research, and an innovative CMOS gate drive technique for efficiently driving an e-GaN power stage is presented in this work. The converter controller also employs a fast converging analog MPPT control technique.
ContributorsKrishnan Achary, Kiran Kumar (Author) / Kitchen, Jennifer (Thesis advisor) / Kiaei, Sayfe (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2015