Matching Items (3)
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- All Subjects: Electromigration
- Creators: Ankit, Kumar
Description
Electromigration, the net atomic diffusion associated with the momentum transfer from electrons moving through a material, is a major cause of device and component failure in microelectronics. The deleterious effects from electromigration rise with increased current density, a parameter that will only continue to increase as our electronic devices get smaller and more compact. Understanding the dynamic diffusional pathways and mechanisms of these electromigration-induced and propagated defects can further our attempts at mitigating these failure modes. This dissertation provides insight into the relationships between these defects and parameters of electric field strength, grain boundary misorientation, grain size, void size, eigenstrain, varied atomic mobilities, and microstructure.First, an existing phase-field model was modified to investigate the various defect modes associated with electromigration in an equiaxed non-columnar microstructure. Of specific interest was the effect of grain boundary misalignment with respect to current flow and the mechanisms responsible for the changes in defect kinetics. Grain size, magnitude of externally applied electric field, and the utilization of locally distinct atomic mobilities were other parameters investigated. Networks of randomly distributed grains, a common microstructure of interconnects, were simulated in both 2- and 3-dimensions displaying the effects of 3-D capillarity on diffusional dynamics.
Also, a numerical model was developed to study the effect of electromigration on void migration and coalescence. Void migration rates were found to be slowed from compressive forces and the nature of the deformation concurrent with migration was examined through the lens of chemical potential. Void migration was also validated with previously reported theoretical explanations. Void coalescence and void budding were investigated and found to be dependent on the magnitude of interfacial energy and electric field strength.
A grasp on the mechanistic pathways of electromigration-induced defect evolution is imperative to the development of reliable electronics, especially as electronic devices continue to miniaturize. This dissertation displays a working understanding of the mechanistic pathways interconnects can fail due to electromigration, as well as provide direction for future research and understanding.
ContributorsFarmer, William McHann (Author) / Ankit, Kumar (Thesis advisor) / Chawla, Nikhilesh (Committee member) / Jiao, Yang (Committee member) / McCue, Ian (Committee member) / Arizona State University (Publisher)
Created2022
Description
As the microelectronics industry continues to decrease the size of solder joints, each joint will have to carry a greater current density, making atom diffusion due to current flow, electromigration (EM), a problem of ever-increasing severity. The rate of EM damage depends on current density, operating temperature, and the original microstructure of the solder joint, including void volume, grain orientation, and grain size. While numerous studies have investigated the post-mortem effects of EM and have tested a range of current densities and temperatures, none have been able to analyze how the same joint evolves from its initial to final microstructure. This thesis focuses on the study of EM, thermal aging, and thermal cycling in Sn-rich solder joints. Solder joints were either of controlled microstructure and orientation or had trace alloying element additions. Sn grain orientation has been linked to a solder joints’ susceptibility to EM damage, but the precise relationship between orientation and intermetallic (IMC) and void growth has not been deduced. In this research x-ray microtomography was used to nondestructively scan samples and generate 3D reconstructions of both surface and internal features such as interfaces, IMC particles, and voids within a solder joint. Combined with controlled fabrication techniques to create comparable samples and electron backscatter diffraction (EBSD) and energy-dispersive spectroscopy (EDS) analysis for grain orientation and composition analysis, this work shows how grain structure plays a critical role in EM damage and how it differs from damage accrued from thermal effects that occur simultaneously. Unique IMC growth and voiding behaviors are characterized and explained in relation to the solder microstructures that cause their formation and the possible IMC-suppression effects of trace alloying element addition are discussed.
ContributorsBranch Kelly, Marion (Author) / Chawla, Nikhilesh (Thesis advisor) / Ankit, Kumar (Committee member) / Antoniswamy, Aravindha (Committee member) / Arizona State University (Publisher)
Created2019
Description
Miniaturization of microdevices comes at the cost of increased circuit complexity and operating current densities. At high current densities, the resulting electron wind imparts a large momentum to metal ions triggering electromigration which leads to degradation of interconnects and solder, ultimately resulting in circuit failure. Although electromigration-induced defects in electronic materials can manifest in several forms, the formation of voids is a common occurrence. This research aims at understanding the morphological evolution of voids under electromigration by formulating a diffuse interface approach that accounts for anisotropic mobility in the metallic interconnect. Based on an extensive parametric study, this study reports the conditions under which pancaking of voids or the novel void ‘swimming’ regimes are observed. Finally, inferences are drawn to formulate strategies using which the reliability of interconnects can be improved.
ContributorsVemulapalli, Sree Shivani (Author) / Ankit, Kumar (Thesis advisor) / Chawla, Nikhilesh (Committee member) / Singh, Arunima (Committee member) / Arizona State University (Publisher)
Created2020