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- All Subjects: Dislocations
- All Subjects: Metals--Inclusions.
- Creators: Mccartney, Martha R
- Member of: ASU Electronic Theses and Dissertations
Description
The work contained in this dissertation is focused on the structural and optical properties of III-V semiconductor structures for solar cell applications. By using transmission electron microscopy, many of their structural properties have been investigated, including morphology, defects, and strain relaxation. The optical properties of the semiconductor structures have been studied by photoluminescence and cathodoluminescence.
Part of this work is focused on InAs quantum dots (QDs) embedded in AlGaAs matrices. This QD system is important for the realization of intermediate-band solar cells, which has three light absorption paths for high efficiency photovoltaics. The suppression of plastic strain relaxation in the QDs shows a significant improvement of the optoelectronic properties. A partial capping followed by a thermal annealing step is used to achieve spool-shaped QDs with a uniform height following the thickness of the capping layer. This step keeps the height of the QDs below a critical value that is required for plastic relaxation. The spool-shaped QDs exhibit two photoluminescence peaks that are attributed to ground and excited state transitions. The luminescence peak width is associated with the QD diameter distribution. An InAs cover layer formed during annealing is found responsible for the loss of the confinement of the excited states in smaller QDs.
The second part of this work is focused on the investigation of the InxGa1-xN thin films having different bandgaps for double-junction solar cells. InxGa1-xN films with x ≤ 0.15 were grown by metal organic chemical vapor deposition. The defects in films with different indium contents have been studied. Their effect on the optical properties of the film have been investigated by cathodoluminescence. InxGa1-xN films with indium contents higher than 20% were grown by molecular beam epitaxy. The strain relaxation in the films has been measured from electron diffraction patterns taken in cross-sectional TEM specimens. Moiré fringes in some of the films reveal interfacial strain relaxation that is explained by a critical thickness model.
Part of this work is focused on InAs quantum dots (QDs) embedded in AlGaAs matrices. This QD system is important for the realization of intermediate-band solar cells, which has three light absorption paths for high efficiency photovoltaics. The suppression of plastic strain relaxation in the QDs shows a significant improvement of the optoelectronic properties. A partial capping followed by a thermal annealing step is used to achieve spool-shaped QDs with a uniform height following the thickness of the capping layer. This step keeps the height of the QDs below a critical value that is required for plastic relaxation. The spool-shaped QDs exhibit two photoluminescence peaks that are attributed to ground and excited state transitions. The luminescence peak width is associated with the QD diameter distribution. An InAs cover layer formed during annealing is found responsible for the loss of the confinement of the excited states in smaller QDs.
The second part of this work is focused on the investigation of the InxGa1-xN thin films having different bandgaps for double-junction solar cells. InxGa1-xN films with x ≤ 0.15 were grown by metal organic chemical vapor deposition. The defects in films with different indium contents have been studied. Their effect on the optical properties of the film have been investigated by cathodoluminescence. InxGa1-xN films with indium contents higher than 20% were grown by molecular beam epitaxy. The strain relaxation in the films has been measured from electron diffraction patterns taken in cross-sectional TEM specimens. Moiré fringes in some of the films reveal interfacial strain relaxation that is explained by a critical thickness model.
ContributorsXie, Hong'en (Author) / Ponce, Fernando A. (Thesis advisor) / Crozier, Peter A. (Committee member) / Mccartney, Martha R (Committee member) / Arizona State University (Publisher)
Created2016
Description
A method for modelling the interactions of dislocations with inclusions has been developed to analyse toughening mechanisms in alloys. This method is different from the superposition method in that infinite domain solutions and image stress fields are not superimposed. The method is based on the extended finite element method (XFEM) in which the dislocations are modelled according to the Volterra dislocation model. Interior discontinuities are introduced across dislocation glide planes using enrichment functions and the resulting boundary value problem is solved through the standard finite element variational approach. The level set method is used to describe the geometry of the dislocation glide planes without any explicit treatment of the interface geometry which provides a convenient and an appealing means for describing the dislocation. A method for estimating the Peach-Koehler force by the domain form of J-integral is considered. The convergence and accuracy of the method are studied for an edge dislocation interacting with a free surface where analytical solutions are available. The force converges to the exact solution at an optimal rate for linear finite elements. The applicability of the method to dislocation interactions with inclusions is illustrated with a system of Aluminium matrix containing Aluminium-copper precipitates. The effect of size, shape and orientation of the inclusions on an edge dislocation for a difference in stiffness and coefficient of thermal expansion of the inclusions and matrix is considered. The force on the dislocation due to a hard inclusion increased by 8% in approaching the sharp corners of a square inclusion than a circular inclusion of equal area. The dislocation experienced 24% more force in moving towards the edges of a square shaped inclusion than towards its centre. When the areas of the inclusions were halved, 30% less force was exerted on the dislocation. This method was used to analyse interfaces with mismatch strains. Introducing eigenstrains equal to 0.004 to the elastic mismatch increased the force by 15 times for a circular inclusion. The energy needed to move an edge dislocation through a domain filled with circular inclusions is 4% more than that needed for a domain with square shaped inclusions.
ContributorsVeeresh, Pawan (Author) / Oswald, Jay (Thesis advisor) / Jiang, Hanqing (Committee member) / Liu, Yongming (Committee member) / Arizona State University (Publisher)
Created2016