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This work focuses on the existence of multiple resistance states in a type of emerging non-volatile resistive memory device known commonly as Programmable Metallization Cell (PMC) or Conductive Bridge Random Access Memory (CBRAM), which can be important for applications such as multi-bit memory as well as non-volatile logic and neuromorphic

This work focuses on the existence of multiple resistance states in a type of emerging non-volatile resistive memory device known commonly as Programmable Metallization Cell (PMC) or Conductive Bridge Random Access Memory (CBRAM), which can be important for applications such as multi-bit memory as well as non-volatile logic and neuromorphic computing. First, experimental data from small signal, quasi-static and pulsed mode electrical characterization of such devices are presented which clearly demonstrate the inherent multi-level resistance programmability property in CBRAM devices. A physics based analytical CBRAM compact model is then presented which simulates the ion-transport dynamics and filamentary growth mechanism that causes resistance change in such devices. Simulation results from the model are fitted to experimental dynamic resistance switching characteristics. The model designed using Verilog-a language is computation-efficient and can be integrated with industry standard circuit simulation tools for design and analysis of hybrid circuits involving both CMOS and CBRAM devices. Three main circuit applications for CBRAM devices are explored in this work. Firstly, the susceptibility of CBRAM memory arrays to single event induced upsets is analyzed via compact model simulation and experimental heavy ion testing data that show possibility of both high resistance to low resistance and low resistance to high resistance transitions due to ion strikes. Next, a non-volatile sense amplifier based flip-flop architecture is proposed which can help make leakage power consumption negligible by allowing complete shutdown of power supply while retaining its output data in CBRAM devices. Reliability and energy consumption of the flip-flop circuit for different CBRAM low resistance levels and supply voltage values are analyzed and compared to CMOS designs. Possible extension of this architecture for threshold logic function computation using the CBRAM devices as re-configurable resistive weights is also discussed. Lastly, Spike timing dependent plasticity (STDP) based gradual resistance change behavior in CBRAM device fabricated in back-end-of-line on a CMOS die containing integrate and fire CMOS neuron circuits is demonstrated for the first time which indicates the feasibility of using CBRAM devices as electronic synapses in spiking neural network hardware implementations for non-Boolean neuromorphic computing.
ContributorsMahalanabis, Debayan (Author) / Barnaby, Hugh J. (Thesis advisor) / Kozicki, Michael N. (Committee member) / Vrudhula, Sarma (Committee member) / Yu, Shimeng (Committee member) / Arizona State University (Publisher)
Created2015
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Description
Large datasets of sub-meter aerial imagery represented as orthophoto mosaics are widely available today, and these data sets may hold a great deal of untapped information. This imagery has a potential to locate several types of features; for example, forests, parking lots, airports, residential areas, or freeways in the imagery.

Large datasets of sub-meter aerial imagery represented as orthophoto mosaics are widely available today, and these data sets may hold a great deal of untapped information. This imagery has a potential to locate several types of features; for example, forests, parking lots, airports, residential areas, or freeways in the imagery. However, the appearances of these things vary based on many things including the time that the image is captured, the sensor settings, processing done to rectify the image, and the geographical and cultural context of the region captured by the image. This thesis explores the use of deep convolutional neural networks to classify land use from very high spatial resolution (VHR), orthorectified, visible band multispectral imagery. Recent technological and commercial applications have driven the collection a massive amount of VHR images in the visible red, green, blue (RGB) spectral bands, this work explores the potential for deep learning algorithms to exploit this imagery for automatic land use/ land cover (LULC) classification. The benefits of automatic visible band VHR LULC classifications may include applications such as automatic change detection or mapping. Recent work has shown the potential of Deep Learning approaches for land use classification; however, this thesis improves on the state-of-the-art by applying additional dataset augmenting approaches that are well suited for geospatial data. Furthermore, the generalizability of the classifiers is tested by extensively evaluating the classifiers on unseen datasets and we present the accuracy levels of the classifier in order to show that the results actually generalize beyond the small benchmarks used in training. Deep networks have many parameters, and therefore they are often built with very large sets of labeled data. Suitably large datasets for LULC are not easy to come by, but techniques such as refinement learning allow networks trained for one task to be retrained to perform another recognition task. Contributions of this thesis include demonstrating that deep networks trained for image recognition in one task (ImageNet) can be efficiently transferred to remote sensing applications and perform as well or better than manually crafted classifiers without requiring massive training data sets. This is demonstrated on the UC Merced dataset, where 96% mean accuracy is achieved using a CNN (Convolutional Neural Network) and 5-fold cross validation. These results are further tested on unrelated VHR images at the same resolution as the training set.
ContributorsUba, Nagesh Kumar (Author) / Femiani, John (Thesis advisor) / Razdan, Anshuman (Committee member) / Amresh, Ashish (Committee member) / Arizona State University (Publisher)
Created2016