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- Genre: Academic theses
- Creators: Cao, Yu
Description
Memories play an integral role in today's advanced ICs. Technology scaling has enabled high density designs at the price paid for impact due to variability and reliability. It is imperative to have accurate methods to measure and extract the variability in the SRAM cell to produce accurate reliability projections for future technologies. This work presents a novel test measurement and extraction technique which is non-invasive to the actual operation of the SRAM memory array. The salient features of this work include i) A single ended SRAM test structure with no disturbance to SRAM operations ii) a convenient test procedure that only requires quasi-static control of external voltages iii) non-iterative method that extracts the VTH variation of each transistor from eight independent switch point measurements. With the present day technology scaling, in addition to the variability with the process, there is also the impact of other aging mechanisms which become dominant. The various aging mechanisms like Negative Bias Temperature Instability (NBTI), Channel Hot Carrier (CHC) and Time Dependent Dielectric Breakdown (TDDB) are critical in the present day nano-scale technology nodes. In this work, we focus on the impact of NBTI due to aging in the SRAM cell and have used Trapping/De-Trapping theory based log(t) model to explain the shift in threshold voltage VTH. The aging section focuses on the following i) Impact of Statistical aging in PMOS device due to NBTI dominates the temporal shift of SRAM cell ii) Besides static variations , shifting in VTH demands increased guard-banding margins in design stage iii) Aging statistics remain constant during the shift, presenting a secondary effect in aging prediction. iv) We have investigated to see if the aging mechanism can be used as a compensation technique to reduce mismatch due to process variations. Finally, the entire test setup has been tested in SPICE and also validated with silicon and the results are presented. The method also facilitates the study of design metrics such as static, read and write noise margins and also the data retention voltage and thus help designers to improve the cell stability of SRAM.
ContributorsRavi, Venkatesa (Author) / Cao, Yu (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Clark, Lawrence (Committee member) / Arizona State University (Publisher)
Created2013
Description
Non-volatile memories (NVM) are widely used in modern electronic devices due to their non-volatility, low static power consumption and high storage density. While Flash memories are the dominant NVM technology, resistive memories such as phase change access memory (PRAM) and spin torque transfer random access memory (STT-MRAM) are gaining ground. All these technologies suffer from reliability degradation due to process variations, structural limits and material property shift. To address the reliability concerns of these NVM technologies, multi-level low cost solutions are proposed for each of them. My approach consists of first building a comprehensive error model. Next the error characteristics are exploited to develop low cost multi-level strategies to compensate for the errors. For instance, for NAND Flash memory, I first characterize errors due to threshold voltage variations as a function of the number of program/erase cycles. Next a flexible product code is designed to migrate to a stronger ECC scheme as program/erase cycles increases. An adaptive data refresh scheme is also proposed to improve memory reliability with low energy cost for applications with different data update frequencies. For PRAM, soft errors and hard errors models are built based on shifts in the resistance distributions. Next I developed a multi-level error control approach involving bit interleaving and subblock flipping at the architecture level, threshold resistance tuning at the circuit level and programming current profile tuning at the device level. This approach helped reduce the error rate significantly so that it was now sufficient to use a low cost ECC scheme to satisfy the memory reliability constraint. I also studied the reliability of a PRAM+DRAM hybrid memory system and analyzed the tradeoffs between memory performance, programming energy and lifetime. For STT-MRAM, I first developed an error model based on process variations. I developed a multi-level approach to reduce the error rates that consisted of increasing the W/L ratio of the access transistor, increasing the voltage difference across the memory cell and adjusting the current profile during write operation. This approach enabled use of a low cost BCH based ECC scheme to achieve very low block failure rates.
ContributorsYang, Chengen (Author) / Chakrabarti, Chaitali (Thesis advisor) / Cao, Yu (Committee member) / Ogras, Umit Y. (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2014
Description
Process variations have become increasingly important for scaled technologies starting at 45nm. The increased variations are primarily due to random dopant fluctuations, line-edge roughness and oxide thickness fluctuation. These variations greatly impact all aspects of circuit performance and pose a grand challenge to future robust IC design. To improve robustness, efficient methodology is required that considers effect of variations in the design flow. Analyzing timing variability of complex circuits with HSPICE simulations is very time consuming. This thesis proposes an analytical model to predict variability in CMOS circuits that is quick and accurate. There are several analytical models to estimate nominal delay performance but very little work has been done to accurately model delay variability. The proposed model is comprehensive and estimates nominal delay and variability as a function of transistor width, load capacitance and transition time. First, models are developed for library gates and the accuracy of the models is verified with HSPICE simulations for 45nm and 32nm technology nodes. The difference between predicted and simulated σ/μ for the library gates is less than 1%. Next, the accuracy of the model for nominal delay is verified for larger circuits including ISCAS'85 benchmark circuits. The model predicted results are within 4% error of HSPICE simulated results and take a small fraction of the time, for 45nm technology. Delay variability is analyzed for various paths and it is observed that non-critical paths can become critical because of Vth variation. Variability on shortest paths show that rate of hold violations increase enormously with increasing Vth variation.
ContributorsGummalla, Samatha (Author) / Chakrabarti, Chaitali (Thesis advisor) / Cao, Yu (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2011
Description
The recent flurry of security breaches have raised serious concerns about the security of data communication and storage. A promising way to enhance the security of the system is through physical root of trust, such as, through use of physical unclonable functions (PUF). PUF leverages the inherent randomness in physical systems to provide device specific authentication and encryption.
In this thesis, first the design of a highly reliable resistive random access memory (RRAM) PUF is presented. Compared to existing 1 cell/bit RRAM, here the sum of the read-out currents of multiple RRAM cells are used for generating one response bit. This method statistically minimizes any early-lifetime failure due to RRAM retention degradation at high temperature or under voltage stress. Using a device model that was calibrated using IMEC HfOx RRAM experimental data, it was shown that an 8 cells/bit architecture achieves 99.9999% reliability for a lifetime >10 years at 125℃ . Also, the hardware area overhead of the proposed 8 cells/bit RRAM PUF architecture was smaller than 1 cell/bit RRAM PUF that requires error correction coding to achieve the same reliability.
Next, a basic security primitive is presented, where the RRAM PUF is embedded in the cryptographic module, SHA-256. This architecture is referred to as Embedded PUF or EPUF. EPUF has a security advantage over SHA-256 as it never exposes the PUF response to the outside world. Instead, in each round, the PUF response is used to change a few bits of the message word to produce a unique message digest for each IC. The use of EPUF as a key generation module for AES is also shown. The hardware area requirement for SHA-256 and AES-128 is then analyzed using synthesis results based on TSMC 65nm library. It is shown that the area overhead of 8 cells/bit RRAM PUF is only 1.08% of the SHA-256 module and 0.04% of the AES-128 module. The security analysis of the PUF based systems is also presented. It is shown that the EPUF-based systems are resistant towards standard attacks on PUFs, and that the security of the cryptographic modules is not compromised.
In this thesis, first the design of a highly reliable resistive random access memory (RRAM) PUF is presented. Compared to existing 1 cell/bit RRAM, here the sum of the read-out currents of multiple RRAM cells are used for generating one response bit. This method statistically minimizes any early-lifetime failure due to RRAM retention degradation at high temperature or under voltage stress. Using a device model that was calibrated using IMEC HfOx RRAM experimental data, it was shown that an 8 cells/bit architecture achieves 99.9999% reliability for a lifetime >10 years at 125℃ . Also, the hardware area overhead of the proposed 8 cells/bit RRAM PUF architecture was smaller than 1 cell/bit RRAM PUF that requires error correction coding to achieve the same reliability.
Next, a basic security primitive is presented, where the RRAM PUF is embedded in the cryptographic module, SHA-256. This architecture is referred to as Embedded PUF or EPUF. EPUF has a security advantage over SHA-256 as it never exposes the PUF response to the outside world. Instead, in each round, the PUF response is used to change a few bits of the message word to produce a unique message digest for each IC. The use of EPUF as a key generation module for AES is also shown. The hardware area requirement for SHA-256 and AES-128 is then analyzed using synthesis results based on TSMC 65nm library. It is shown that the area overhead of 8 cells/bit RRAM PUF is only 1.08% of the SHA-256 module and 0.04% of the AES-128 module. The security analysis of the PUF based systems is also presented. It is shown that the EPUF-based systems are resistant towards standard attacks on PUFs, and that the security of the cryptographic modules is not compromised.
ContributorsShrivastava, Ayush (Author) / Chakrabarti, Chaitali (Thesis advisor) / Yu, Shimeng (Committee member) / Cao, Yu (Committee member) / Arizona State University (Publisher)
Created2015