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- All Subjects: Reliability
- Creators: Tamizhmani, Govindasamy
- Creators: Schroder, Dieter
Description
ABSTRACT As the use of photovoltaic (PV) modules in large power plants continues to increase globally, more studies on degradation, reliability, failure modes, and mechanisms of field aged modules are needed to predict module life expectancy based on accelerated lifetime testing of PV modules. In this work, a 26+ year old PV power plant in Phoenix, Arizona has been evaluated for performance, reliability, and durability. The PV power plant, called Solar One, is owned and operated by John F. Long's homeowners association. It is a 200 kWdc, standard test conditions (STC) rated power plant comprised of 4000 PV modules or frameless laminates, in 100 panel groups (rated at 175 kWac). The power plant is made of two center-tapped bipolar arrays, the north array and the south array. Due to a limited time frame to execute this large project, this work was performed by two masters students (Jonathan Belmont and Kolapo Olakonu) and the test results are presented in two masters theses. This thesis presents the results obtained on the south array and the other thesis presents the results obtained on the north array. Each of these two arrays is made of four sub arrays, the east sub arrays (positive and negative polarities) and the west sub arrays (positive and negative polarities), making up eight sub arrays. The evaluation and analyses of the power plant included in this thesis consists of: visual inspection, electrical performance measurements, and infrared thermography. A possible presence of potential induced degradation (PID) due to potential difference between ground and strings was also investigated. Some installation practices were also studied and found to contribute to the power loss observed in this investigation. The power output measured in 2011 for all eight sub arrays at STC is approximately 76 kWdc and represents a power loss of 62% (from 200 kW to 76 kW) over 26+ years. The 2011 measured power output for the four south sub arrays at STC is 39 kWdc and represents a power loss of 61% (from 100 kW to 39 kW) over 26+ years. Encapsulation browning and non-cell interconnect ribbon breakages were determined to be the primary causes for the power loss.
ContributorsOlakonu, Kolapo (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Srinivasan, Devarajan (Committee member) / Rogers, Bradley (Committee member) / Arizona State University (Publisher)
Created2012
Description
Electromigration in metal interconnects is the most pernicious failure mechanism in semiconductor integrated circuits (ICs). Early electromigration investigations were primarily focused on aluminum interconnects for silicon-based ICs. An alternative metallization compatible with gallium arsenide (GaAs) was required in the development of high-powered radio frequency (RF) compound semiconductor devices operating at higher current densities and elevated temperatures. Gold-based metallization was implemented on GaAs devices because it uniquely forms a very low resistance ohmic contact and gold interconnects have superior electrical and thermal conductivity properties. Gold (Au) was also believed to have improved resistance to electromigration due to its higher melting temperature, yet electromigration reliability data on passivated Au interconnects is scarce and inadequate in the literature. Therefore, the objective of this research was to characterize the electromigration lifetimes of passivated Au interconnects under precisely controlled stress conditions with statistically relevant quantities to obtain accurate model parameters essential for extrapolation to normal operational conditions. This research objective was accomplished through measurement of electromigration lifetimes of large quantities of passivated electroplated Au interconnects utilizing high-resolution in-situ resistance monitoring equipment. Application of moderate accelerated stress conditions with a current density limited to 2 MA/cm2 and oven temperatures in the range of 300°C to 375°C avoided electrical overstress and severe Joule-heated temperature gradients. Temperature coefficients of resistance (TCRs) were measured to determine accurate Joule-heated Au interconnect film temperatures. A failure criterion of 50% resistance degradation was selected to prevent thermal runaway and catastrophic metal ruptures that are problematic of open circuit failure tests. Test structure design was optimized to reduce resistance variation and facilitate failure analysis. Characterization of the Au microstructure yielded a median grain size of 0.91 ìm. All Au lifetime distributions followed log-normal distributions and Black's model was found to be applicable. An activation energy of 0.80 ± 0.05 eV was measured from constant current electromigration tests at multiple temperatures. A current density exponent of 1.91 was extracted from multiple current densities at a constant temperature. Electromigration-induced void morphology along with these model parameters indicated grain boundary diffusion is dominant and the void nucleation mechanism controlled the failure time.
ContributorsKilgore, Stephen (Author) / Adams, James (Thesis advisor) / Schroder, Dieter (Thesis advisor) / Krause, Stephen (Committee member) / Gaw, Craig (Committee member) / Arizona State University (Publisher)
Created2013
Description
Photovoltaic (PV) modules undergo performance degradation depending on climatic conditions, applications, and system configurations. The performance degradation prediction of PV modules is primarily based on Accelerated Life Testing (ALT) procedures. In order to further strengthen the ALT process, additional investigation of the power degradation of field aged PV modules in various configurations is required. A detailed investigation of 1,900 field aged (12-18 years) PV modules deployed in a power plant application was conducted for this study. Analysis was based on the current-voltage (I-V) measurement of all the 1,900 modules individually. I-V curve data of individual modules formed the basis for calculating the performance degradation of the modules. The percentage performance degradation and rates of degradation were compared to an earlier study done at the same plant. The current research was primarily focused on identifying the extent of potential induced degradation (PID) of individual modules with reference to the negative ground potential. To investigate this, the arrangement and connection of the individual modules/strings was examined in detail. The study also examined the extent of underperformance of every series string due to performance mismatch of individual modules in that string. The power loss due to individual module degradation and module mismatch at string level was then compared to the rated value.
ContributorsJaspreet Singh (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Srinivasan, Devarajan (Committee member) / Rogers, Bradley (Committee member) / Arizona State University (Publisher)
Created2011
Description
This dissertation addresses challenges pertaining to multi-junction (MJ) solar cells from material development to device design and characterization. Firstly, among the various methods to improve the energy conversion efficiency of MJ solar cells using, a novel approach proposed recently is to use II-VI (MgZnCd)(SeTe) and III-V (AlGaIn)(AsSb) semiconductors lattice-matched on GaSb or InAs substrates for current-matched subcells with minimal defect densities. CdSe/CdTe superlattices are proposed as a potential candidate for a subcell in the MJ solar cell designs using this material system, and therefore the material properties of the superlattices are studied. The high structural qualities of the superlattices are obtained from high resolution X-ray diffraction measurements and cross-sectional transmission electron microscopy images. The effective bandgap energies of the superlattices obtained from the photoluminescence (PL) measurements vary with the layer thicknesses, and are smaller than the bandgap energies of either the constituent material. Furthermore, The PL peak position measured at the steady state exhibits a blue shift that increases with the excess carrier concentration. These results confirm a strong type-II band edge alignment between CdSe and CdTe. The valence band offset between unstrained CdSe and CdTe is determined as 0.63 eV±0.06 eV by fitting the measured PL peak positions using the Kronig-Penney model. The blue shift in PL peak position is found to be primarily caused by the band bending effect based on self-consistent solutions of the Schrödinger and Poisson equations. Secondly, the design of the contact grid layout is studied to maximize the power output and energy conversion efficiency for concentrator solar cells. Because the conventional minimum power loss method used for the contact design is not accurate in determining the series resistance loss, a method of using a distributed series resistance model to maximize the power output is proposed for the contact design. It is found that the junction recombination loss in addition to the series resistance loss and shadowing loss can significantly affect the contact layout. The optimal finger spacing and maximum efficiency calculated by the two methods are close, and the differences are dependent on the series resistance and saturation currents of solar cells. Lastly, the accurate measurements of external quantum efficiency (EQE) are important for the design and development of MJ solar cells. However, the electrical and optical couplings between the subcells have caused EQE measurement artifacts. In order to interpret the measurement artifacts, DC and small signal models are built for the bias condition and the scan of chopped monochromatic light in the EQE measurements. Characterization methods are developed for the device parameters used in the models. The EQE measurement artifacts are found to be caused by the shunt and luminescence coupling effects, and can be minimized using proper voltage and light biases. Novel measurement methods using a pulse voltage bias or a pulse light bias are invented to eliminate the EQE measurement artifacts. These measurement methods are nondestructive and easy to implement. The pulse voltage bias or pulse light bias is superimposed on the conventional DC voltage and light biases, in order to control the operating points of the subcells and counterbalance the effects of shunt and luminescence coupling. The methods are demonstrated for the first time to effectively eliminate the measurement artifacts.
ContributorsLi, Jingjing (Author) / Zhang, Yong-Hang (Thesis advisor) / Tao, Meng (Committee member) / Schroder, Dieter (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2012
Characterization and analysis of long term field aged photovoltaic modules and encapsulant materials
Description
Photovoltaic (PV) module degradation is a well-known issue, however understanding the mechanistic pathways in which modules degrade is still a major task for the PV industry. In order to study the mechanisms responsible for PV module degradation, the effects of these degradation mechanisms must be quantitatively measured to determine the severity of each degradation mode. In this thesis multiple modules from three climate zones (Arizona, California and Colorado) were investigated for a single module glass/polymer construction (Siemens M55) to determine the degree to which they had degraded, and the main factors that contributed to that degradation. To explain the loss in power, various nondestructive and destructive techniques were used to indicate possible causes of loss in performance. This is a two-part thesis. Part 1 presents non-destructive test results and analysis and Part 2 presents destructive test results and analysis.
ContributorsChicca, Matthew (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Rogers, Bradley (Committee member) / Srinivasan, Devarajan (Committee member) / Arizona State University (Publisher)
Created2015
Description
Ethylene vinyl acetate (EVA) is the most commonly used encapsulant in photovoltaic modules. However, EVA degrades over time and causes performance losses in PV system. Therefore, EVA degradation is a matter of concern from a durability point of view.
This work compares EVA encapsulant degradation in glass/backsheet and glass/glass field-aged PV modules. EVA was extracted from three field-aged modules (two glass/backsheet and one glass/glass modules) from three different manufacturers from various regions (cell edges, cell centers, and non-cell region) from each module based on their visual and UV Fluorescence images. Characterization techniques such as I-V measurements, Colorimetry, Different Scanning Calorimetry, Thermogravimetric Analysis, Raman spectroscopy, and Fourier Transform Infrared Spectroscopy were performed on EVA samples.
The intensity of EVA discoloration was quantified using colorimetric measurements. Module performance parameters like Isc and Pmax degradation rates were calculated from I-V measurements. Properties such as degree of crystallinity, vinyl acetate content and degree of crosslinking were calculated from DSC, TGA, and Raman measurements, respectively. Polyenes responsible for EVA browning were identified in FTIR spectra.
The results from the characterization techniques confirmed that when EVA undergoes degradation, crosslinking in EVA increases beyond 90% causing a decrease in the degree of crystallinity and an increase in vinyl acetate content of EVA. Presence of polyenes in FTIR spectra of degraded EVA confirmed the occurrence of Norrish II reaction. However, photobleaching occurred in glass/backsheet modules due to the breathable backsheet whereas no photobleaching occurred in glass/glass modules because they were hermetically sealed. Hence, the yellowness index along with the Isc and Pmax degradation rates of EVA in glass/glass module is higher than that in glass/backsheet modules.
The results implied that more acetic acid was produced in the non-cell region due to its double layer of EVA compared to the front EVA from cell region. But, since glass/glass module is hermetically sealed, acetic acid gets entrapped inside the module further accelerating EVA degradation whereas it diffuses out through backsheet in glass/backsheet modules. Hence, it can be said that EVA might be a good encapsulant for glass/backsheet modules, but the same cannot be said for glass/glass modules.
This work compares EVA encapsulant degradation in glass/backsheet and glass/glass field-aged PV modules. EVA was extracted from three field-aged modules (two glass/backsheet and one glass/glass modules) from three different manufacturers from various regions (cell edges, cell centers, and non-cell region) from each module based on their visual and UV Fluorescence images. Characterization techniques such as I-V measurements, Colorimetry, Different Scanning Calorimetry, Thermogravimetric Analysis, Raman spectroscopy, and Fourier Transform Infrared Spectroscopy were performed on EVA samples.
The intensity of EVA discoloration was quantified using colorimetric measurements. Module performance parameters like Isc and Pmax degradation rates were calculated from I-V measurements. Properties such as degree of crystallinity, vinyl acetate content and degree of crosslinking were calculated from DSC, TGA, and Raman measurements, respectively. Polyenes responsible for EVA browning were identified in FTIR spectra.
The results from the characterization techniques confirmed that when EVA undergoes degradation, crosslinking in EVA increases beyond 90% causing a decrease in the degree of crystallinity and an increase in vinyl acetate content of EVA. Presence of polyenes in FTIR spectra of degraded EVA confirmed the occurrence of Norrish II reaction. However, photobleaching occurred in glass/backsheet modules due to the breathable backsheet whereas no photobleaching occurred in glass/glass modules because they were hermetically sealed. Hence, the yellowness index along with the Isc and Pmax degradation rates of EVA in glass/glass module is higher than that in glass/backsheet modules.
The results implied that more acetic acid was produced in the non-cell region due to its double layer of EVA compared to the front EVA from cell region. But, since glass/glass module is hermetically sealed, acetic acid gets entrapped inside the module further accelerating EVA degradation whereas it diffuses out through backsheet in glass/backsheet modules. Hence, it can be said that EVA might be a good encapsulant for glass/backsheet modules, but the same cannot be said for glass/glass modules.
ContributorsPatel, Aesha Parimalbhai (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Green, Matthew (Committee member) / Mu, Bin (Committee member) / Arizona State University (Publisher)
Created2018
Description
Potential-Induced Degradation (PID) is an extremely serious photovoltaic (PV) durability issue significantly observed in crystalline silicon PV modules due to its rapid power degradation, particularly when compared to other PV degradation modes. The focus of this dissertation is to understand PID mechanisms and to develop PID-free cells and modules. PID-affected modules have been claimed to be fully recovered by high temperature and reverse potential treatments. However, the results obtained in this work indicate that the near-full recovery of efficiency can be achieved only at high irradiance conditions, but the full recovery of efficiency at low irradiance levels, of shunt resistance, and of quantum efficiency (QE) at short wavelengths could not be achieved. The QE loss observed at short wavelengths was modeled by changing the front surface recombination velocity. The QE scaling error due to a measurement on a PID shunted cell was addressed by developing a very low input impedance accessory applicable to an existing QE system. The impacts of silicon nitride (SiNx) anti-reflection coating (ARC) refractive index (RI) and emitter sheet resistance on PID are presented. Low RI ARC cells (1.87) were observed to be PID-susceptible whereas high RI ARC cells (2.05) were determined to be PID-resistant using a method employing high dose corona charging followed by time-resolved measurement of surface voltage. It has been demonstrated that the PID could be prevented by deploying an emitter having a low sheet resistance (~ 60 /sq) even if a PID-susceptible ARC is used in a cell. Secondary ion mass spectroscopy (SIMS) results suggest that a high phosphorous emitter layer hinders sodium transport, which is responsible for the PID. Cells can be screened for PID susceptibility by illuminated lock-in thermography (ILIT) during the cell fabrication process, and the sample structure for this can advantageously be simplified as long as the sample has the SiNx ARC and an aluminum back surface field. Finally, this dissertation presents a prospective method for eliminating or minimizing the PID issue either in the factory during manufacturing or in the field after system installation. The method uses commercially available, thin, and flexible Corning® Willow® Glass sheets or strips on the PV module glass superstrates, disrupting the current leakage path from the cells to the grounded frame.
ContributorsOh, Jaewon (Author) / Bowden, Stuart (Thesis advisor) / Tamizhmani, Govindasamy (Thesis advisor) / Honsberg, Christiana (Committee member) / Hacke, Peter (Committee member) / Schroder, Dieter (Committee member) / Arizona State University (Publisher)
Created2016
Description
This is a two-part thesis assessing the long-term reliability of photovoltaic modules.
Part 1: Manufacturing dependent reliability - Adapting FMECA for quality control in PV module manufacturing
This part is aimed at introducing a statistical tool in quality assessments in PV module manufacturing. Developed jointly by ASU-PRL and Clean Energy Associates, this work adapts the Failure Mode Effect and Criticality Analysis (FMECA, IEC 60812) to quantify the impact of failure modes observed at the time of manufacturing. The method was developed through analysis of nearly 9000 modules at the pre-shipment evaluation stage in module manufacturing facilities across south east Asia. Numerous projects were analyzed to generate RPN (Risk Priority Number) scores for projects. In this manner, it was possibly to quantitatively assess the risk being carried the project at the time of shipment of modules. The objective of this work was to develop a benchmarking system that would allow for accurate quantitative estimations of risk mitigation and project bankability.
Part 2: Climate dependent reliability - Activation energy determination for climate specific degradation modes
This work attempts to model the parameter (Isc or Rs) degradation rate of modules as a function of the climatic parameters (i.e. temperature, relative humidity and ultraviolet radiation) at the site. The objective of this work was to look beyond the power degradation rate and model based on the performance parameter directly affected by the degradation mode under investigation (encapsulant browning or IMS degradation of solder bonds). Different physical models were tested and validated through comparing the activation energy obtained for each degradation mode. It was concluded that, for the degradation of the solder bonds within the module, the Pecks equation (function of temperature and relative humidity) modelled with Rs increase was the best fit; the activation energy ranging from 0.4 – 0.7 eV based on the climate type. For encapsulant browning, the Modified Arrhenius equation (function of temperature and UV) seemed to be the best fit presently, yielding an activation energy of 0.3 eV. The work was concluded by suggesting possible modifications to the models based on degradation pathways unaccounted for in the present work.
Part 1: Manufacturing dependent reliability - Adapting FMECA for quality control in PV module manufacturing
This part is aimed at introducing a statistical tool in quality assessments in PV module manufacturing. Developed jointly by ASU-PRL and Clean Energy Associates, this work adapts the Failure Mode Effect and Criticality Analysis (FMECA, IEC 60812) to quantify the impact of failure modes observed at the time of manufacturing. The method was developed through analysis of nearly 9000 modules at the pre-shipment evaluation stage in module manufacturing facilities across south east Asia. Numerous projects were analyzed to generate RPN (Risk Priority Number) scores for projects. In this manner, it was possibly to quantitatively assess the risk being carried the project at the time of shipment of modules. The objective of this work was to develop a benchmarking system that would allow for accurate quantitative estimations of risk mitigation and project bankability.
Part 2: Climate dependent reliability - Activation energy determination for climate specific degradation modes
This work attempts to model the parameter (Isc or Rs) degradation rate of modules as a function of the climatic parameters (i.e. temperature, relative humidity and ultraviolet radiation) at the site. The objective of this work was to look beyond the power degradation rate and model based on the performance parameter directly affected by the degradation mode under investigation (encapsulant browning or IMS degradation of solder bonds). Different physical models were tested and validated through comparing the activation energy obtained for each degradation mode. It was concluded that, for the degradation of the solder bonds within the module, the Pecks equation (function of temperature and relative humidity) modelled with Rs increase was the best fit; the activation energy ranging from 0.4 – 0.7 eV based on the climate type. For encapsulant browning, the Modified Arrhenius equation (function of temperature and UV) seemed to be the best fit presently, yielding an activation energy of 0.3 eV. The work was concluded by suggesting possible modifications to the models based on degradation pathways unaccounted for in the present work.
ContributorsPore, Shantanu (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Green, Matthew (Thesis advisor) / Srinivasan, Devrajan (Committee member) / Arizona State University (Publisher)
Created2017
Description
This study introduces a new outdoor accelerated testing method called “Field Accelerated Stress Testing (FAST)” for photovoltaic (PV) modules performed at two
different climatic sites in Arizona (hot-dry) and Florida (hot-humid). FAST is a combined
accelerated test methodology that simultaneously accounts for all the field-specific stresses
and accelerates only key stresses, such as temperature, to forecast the failure modes by 2-
7 times in advance depending on the activation energy of the degradation mechanism (i.e.,
10th year reliability issues can potentially be predicted in the 2nd year itself for an
acceleration factor of 5). In this outdoor combined accelerated stress study, the
temperatures of test modules were increased (by 16-19℃ compared to control modules)
using thermal insulations on the back of the modules. All other conditions (ambient
temperature, humidity, natural sunlight, wind speed, wind direction, and tilt angle) were
left constant for both test modules (with back thermal insulation) and control modules
(without thermal insulation). In this study, a total of sixteen 4-cell modules with two different construction types (glass/glass [GG] and glass/backsheet [GB]) and two different encapsulant types (ethylene
vinyl acetate [EVA] and polyolefin elastomer [POE]), were investigated at both sites with
eight modules at each site (four insulated and four non-insulated modules at each site). All
the modules were extensively characterized before installation in the field and after field
exposure over two years. The methods used for characterizing the devices included I-V
(current-voltage curves), EL (electroluminescence), UVF (ultraviolet fluorescence), and
reflectance. The key findings of this study are: i) the GG modules tend to operate at a higher temperature (1-3℃) than the GB modules at both sites of Arizona and Florida (a lower
lifetime is expected for GG modules compared to GB modules); ii) the GG modules tend
to experience a higher level of encapsulant discoloration and grid finger degradation than
the GB modules at both sites (a higher level of the degradation rate is expected in GG
modules compared to GB modules); and, iii) the EVA-based modules tend to have a higher
level of discoloration and finger degradation compared to the POE-based modules at both
sites.
ContributorsThayumanavan, Rishi Gokul (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Phelan, Patrick (Thesis advisor) / Calhoun, Ronald (Committee member) / Arizona State University (Publisher)
Created2023
Description
An ongoing effort in the photovoltaic (PV) industry is to reduce the major manufacturing cost components of solar cells, the great majority of which are based on crystalline silicon (c-Si). This includes the substitution of screenprinted silver (Ag) cell contacts with alternative copper (Cu)-based contacts, usually applied with plating. Plated Cu contact schemes have been under study for many years with only minor traction in industrial production. One of the more commonly-cited barriers to the adoption of Cu-based contacts for photovoltaics is long-term reliability, as Cu is a significant contaminant in c-Si, forming precipitates that degrade performance via degradation of diode character and reduction of minority carrier lifetime. Cu contamination from contacts might cause degradation during field deployment if Cu is able to ingress into c-Si. Furthermore, Cu contamination is also known to cause a form of light-induced degradation (LID) which further degrades carrier lifetime when cells are exposed to light.
Prior literature on Cu-contact reliability tended to focus on accelerated testing at the cell and wafer level that may not be entirely replicative of real-world environmental stresses in PV modules. This thesis is aimed at advancing the understanding of Cu-contact reliability from the perspective of quasi-commercial modules under more realistic stresses. In this thesis, c-Si solar cells with Cu-plated contacts are fabricated, made into PV modules, and subjected to environmental stress in an attempt to induce hypothesized failure modes and understand any new vulnerabilities that Cu contacts might introduce. In particular, damp heat stress is applied to conventional, p-type c-Si modules and high efficiency, n-type c-Si heterojunction modules. I present evidence of Cu-induced diode degradation that also depends on PV module materials, as well as degradation unrelated to Cu, and in either case suggest engineering solutions to the observed degradation. In a forensic search for degradation mechanisms, I present novel evidence of Cu outdiffusion from contact layers and encapsulant-driven contact corrosion as potential key factors. Finally, outdoor exposures to light uncover peculiarities in Cu-plated samples, but do not point to especially serious vulnerabilities.
Prior literature on Cu-contact reliability tended to focus on accelerated testing at the cell and wafer level that may not be entirely replicative of real-world environmental stresses in PV modules. This thesis is aimed at advancing the understanding of Cu-contact reliability from the perspective of quasi-commercial modules under more realistic stresses. In this thesis, c-Si solar cells with Cu-plated contacts are fabricated, made into PV modules, and subjected to environmental stress in an attempt to induce hypothesized failure modes and understand any new vulnerabilities that Cu contacts might introduce. In particular, damp heat stress is applied to conventional, p-type c-Si modules and high efficiency, n-type c-Si heterojunction modules. I present evidence of Cu-induced diode degradation that also depends on PV module materials, as well as degradation unrelated to Cu, and in either case suggest engineering solutions to the observed degradation. In a forensic search for degradation mechanisms, I present novel evidence of Cu outdiffusion from contact layers and encapsulant-driven contact corrosion as potential key factors. Finally, outdoor exposures to light uncover peculiarities in Cu-plated samples, but do not point to especially serious vulnerabilities.
ContributorsKaras, Joseph (Author) / Bowden, Stuart (Thesis advisor) / Alford, Terry (Thesis advisor) / Tamizhmani, Govindasamy (Committee member) / Michaelson, Lynne (Committee member) / Arizona State University (Publisher)
Created2020