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- All Subjects: Reliability
- Creators: Rogers, Bradley
- Creators: Schroder, Dieter
Description
ABSTRACT As the use of photovoltaic (PV) modules in large power plants continues to increase globally, more studies on degradation, reliability, failure modes, and mechanisms of field aged modules are needed to predict module life expectancy based on accelerated lifetime testing of PV modules. In this work, a 26+ year old PV power plant in Phoenix, Arizona has been evaluated for performance, reliability, and durability. The PV power plant, called Solar One, is owned and operated by John F. Long's homeowners association. It is a 200 kWdc, standard test conditions (STC) rated power plant comprised of 4000 PV modules or frameless laminates, in 100 panel groups (rated at 175 kWac). The power plant is made of two center-tapped bipolar arrays, the north array and the south array. Due to a limited time frame to execute this large project, this work was performed by two masters students (Jonathan Belmont and Kolapo Olakonu) and the test results are presented in two masters theses. This thesis presents the results obtained on the south array and the other thesis presents the results obtained on the north array. Each of these two arrays is made of four sub arrays, the east sub arrays (positive and negative polarities) and the west sub arrays (positive and negative polarities), making up eight sub arrays. The evaluation and analyses of the power plant included in this thesis consists of: visual inspection, electrical performance measurements, and infrared thermography. A possible presence of potential induced degradation (PID) due to potential difference between ground and strings was also investigated. Some installation practices were also studied and found to contribute to the power loss observed in this investigation. The power output measured in 2011 for all eight sub arrays at STC is approximately 76 kWdc and represents a power loss of 62% (from 200 kW to 76 kW) over 26+ years. The 2011 measured power output for the four south sub arrays at STC is 39 kWdc and represents a power loss of 61% (from 100 kW to 39 kW) over 26+ years. Encapsulation browning and non-cell interconnect ribbon breakages were determined to be the primary causes for the power loss.
ContributorsOlakonu, Kolapo (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Srinivasan, Devarajan (Committee member) / Rogers, Bradley (Committee member) / Arizona State University (Publisher)
Created2012
Description
Electromigration in metal interconnects is the most pernicious failure mechanism in semiconductor integrated circuits (ICs). Early electromigration investigations were primarily focused on aluminum interconnects for silicon-based ICs. An alternative metallization compatible with gallium arsenide (GaAs) was required in the development of high-powered radio frequency (RF) compound semiconductor devices operating at higher current densities and elevated temperatures. Gold-based metallization was implemented on GaAs devices because it uniquely forms a very low resistance ohmic contact and gold interconnects have superior electrical and thermal conductivity properties. Gold (Au) was also believed to have improved resistance to electromigration due to its higher melting temperature, yet electromigration reliability data on passivated Au interconnects is scarce and inadequate in the literature. Therefore, the objective of this research was to characterize the electromigration lifetimes of passivated Au interconnects under precisely controlled stress conditions with statistically relevant quantities to obtain accurate model parameters essential for extrapolation to normal operational conditions. This research objective was accomplished through measurement of electromigration lifetimes of large quantities of passivated electroplated Au interconnects utilizing high-resolution in-situ resistance monitoring equipment. Application of moderate accelerated stress conditions with a current density limited to 2 MA/cm2 and oven temperatures in the range of 300°C to 375°C avoided electrical overstress and severe Joule-heated temperature gradients. Temperature coefficients of resistance (TCRs) were measured to determine accurate Joule-heated Au interconnect film temperatures. A failure criterion of 50% resistance degradation was selected to prevent thermal runaway and catastrophic metal ruptures that are problematic of open circuit failure tests. Test structure design was optimized to reduce resistance variation and facilitate failure analysis. Characterization of the Au microstructure yielded a median grain size of 0.91 ìm. All Au lifetime distributions followed log-normal distributions and Black's model was found to be applicable. An activation energy of 0.80 ± 0.05 eV was measured from constant current electromigration tests at multiple temperatures. A current density exponent of 1.91 was extracted from multiple current densities at a constant temperature. Electromigration-induced void morphology along with these model parameters indicated grain boundary diffusion is dominant and the void nucleation mechanism controlled the failure time.
ContributorsKilgore, Stephen (Author) / Adams, James (Thesis advisor) / Schroder, Dieter (Thesis advisor) / Krause, Stephen (Committee member) / Gaw, Craig (Committee member) / Arizona State University (Publisher)
Created2013
Description
Photovoltaic (PV) modules undergo performance degradation depending on climatic conditions, applications, and system configurations. The performance degradation prediction of PV modules is primarily based on Accelerated Life Testing (ALT) procedures. In order to further strengthen the ALT process, additional investigation of the power degradation of field aged PV modules in various configurations is required. A detailed investigation of 1,900 field aged (12-18 years) PV modules deployed in a power plant application was conducted for this study. Analysis was based on the current-voltage (I-V) measurement of all the 1,900 modules individually. I-V curve data of individual modules formed the basis for calculating the performance degradation of the modules. The percentage performance degradation and rates of degradation were compared to an earlier study done at the same plant. The current research was primarily focused on identifying the extent of potential induced degradation (PID) of individual modules with reference to the negative ground potential. To investigate this, the arrangement and connection of the individual modules/strings was examined in detail. The study also examined the extent of underperformance of every series string due to performance mismatch of individual modules in that string. The power loss due to individual module degradation and module mismatch at string level was then compared to the rated value.
ContributorsJaspreet Singh (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Srinivasan, Devarajan (Committee member) / Rogers, Bradley (Committee member) / Arizona State University (Publisher)
Created2011
Description
This dissertation addresses challenges pertaining to multi-junction (MJ) solar cells from material development to device design and characterization. Firstly, among the various methods to improve the energy conversion efficiency of MJ solar cells using, a novel approach proposed recently is to use II-VI (MgZnCd)(SeTe) and III-V (AlGaIn)(AsSb) semiconductors lattice-matched on GaSb or InAs substrates for current-matched subcells with minimal defect densities. CdSe/CdTe superlattices are proposed as a potential candidate for a subcell in the MJ solar cell designs using this material system, and therefore the material properties of the superlattices are studied. The high structural qualities of the superlattices are obtained from high resolution X-ray diffraction measurements and cross-sectional transmission electron microscopy images. The effective bandgap energies of the superlattices obtained from the photoluminescence (PL) measurements vary with the layer thicknesses, and are smaller than the bandgap energies of either the constituent material. Furthermore, The PL peak position measured at the steady state exhibits a blue shift that increases with the excess carrier concentration. These results confirm a strong type-II band edge alignment between CdSe and CdTe. The valence band offset between unstrained CdSe and CdTe is determined as 0.63 eV±0.06 eV by fitting the measured PL peak positions using the Kronig-Penney model. The blue shift in PL peak position is found to be primarily caused by the band bending effect based on self-consistent solutions of the Schrödinger and Poisson equations. Secondly, the design of the contact grid layout is studied to maximize the power output and energy conversion efficiency for concentrator solar cells. Because the conventional minimum power loss method used for the contact design is not accurate in determining the series resistance loss, a method of using a distributed series resistance model to maximize the power output is proposed for the contact design. It is found that the junction recombination loss in addition to the series resistance loss and shadowing loss can significantly affect the contact layout. The optimal finger spacing and maximum efficiency calculated by the two methods are close, and the differences are dependent on the series resistance and saturation currents of solar cells. Lastly, the accurate measurements of external quantum efficiency (EQE) are important for the design and development of MJ solar cells. However, the electrical and optical couplings between the subcells have caused EQE measurement artifacts. In order to interpret the measurement artifacts, DC and small signal models are built for the bias condition and the scan of chopped monochromatic light in the EQE measurements. Characterization methods are developed for the device parameters used in the models. The EQE measurement artifacts are found to be caused by the shunt and luminescence coupling effects, and can be minimized using proper voltage and light biases. Novel measurement methods using a pulse voltage bias or a pulse light bias are invented to eliminate the EQE measurement artifacts. These measurement methods are nondestructive and easy to implement. The pulse voltage bias or pulse light bias is superimposed on the conventional DC voltage and light biases, in order to control the operating points of the subcells and counterbalance the effects of shunt and luminescence coupling. The methods are demonstrated for the first time to effectively eliminate the measurement artifacts.
ContributorsLi, Jingjing (Author) / Zhang, Yong-Hang (Thesis advisor) / Tao, Meng (Committee member) / Schroder, Dieter (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2012
Characterization and analysis of long term field aged photovoltaic modules and encapsulant materials
Description
Photovoltaic (PV) module degradation is a well-known issue, however understanding the mechanistic pathways in which modules degrade is still a major task for the PV industry. In order to study the mechanisms responsible for PV module degradation, the effects of these degradation mechanisms must be quantitatively measured to determine the severity of each degradation mode. In this thesis multiple modules from three climate zones (Arizona, California and Colorado) were investigated for a single module glass/polymer construction (Siemens M55) to determine the degree to which they had degraded, and the main factors that contributed to that degradation. To explain the loss in power, various nondestructive and destructive techniques were used to indicate possible causes of loss in performance. This is a two-part thesis. Part 1 presents non-destructive test results and analysis and Part 2 presents destructive test results and analysis.
ContributorsChicca, Matthew (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Rogers, Bradley (Committee member) / Srinivasan, Devarajan (Committee member) / Arizona State University (Publisher)
Created2015
Description
Potential-Induced Degradation (PID) is an extremely serious photovoltaic (PV) durability issue significantly observed in crystalline silicon PV modules due to its rapid power degradation, particularly when compared to other PV degradation modes. The focus of this dissertation is to understand PID mechanisms and to develop PID-free cells and modules. PID-affected modules have been claimed to be fully recovered by high temperature and reverse potential treatments. However, the results obtained in this work indicate that the near-full recovery of efficiency can be achieved only at high irradiance conditions, but the full recovery of efficiency at low irradiance levels, of shunt resistance, and of quantum efficiency (QE) at short wavelengths could not be achieved. The QE loss observed at short wavelengths was modeled by changing the front surface recombination velocity. The QE scaling error due to a measurement on a PID shunted cell was addressed by developing a very low input impedance accessory applicable to an existing QE system. The impacts of silicon nitride (SiNx) anti-reflection coating (ARC) refractive index (RI) and emitter sheet resistance on PID are presented. Low RI ARC cells (1.87) were observed to be PID-susceptible whereas high RI ARC cells (2.05) were determined to be PID-resistant using a method employing high dose corona charging followed by time-resolved measurement of surface voltage. It has been demonstrated that the PID could be prevented by deploying an emitter having a low sheet resistance (~ 60 /sq) even if a PID-susceptible ARC is used in a cell. Secondary ion mass spectroscopy (SIMS) results suggest that a high phosphorous emitter layer hinders sodium transport, which is responsible for the PID. Cells can be screened for PID susceptibility by illuminated lock-in thermography (ILIT) during the cell fabrication process, and the sample structure for this can advantageously be simplified as long as the sample has the SiNx ARC and an aluminum back surface field. Finally, this dissertation presents a prospective method for eliminating or minimizing the PID issue either in the factory during manufacturing or in the field after system installation. The method uses commercially available, thin, and flexible Corning® Willow® Glass sheets or strips on the PV module glass superstrates, disrupting the current leakage path from the cells to the grounded frame.
ContributorsOh, Jaewon (Author) / Bowden, Stuart (Thesis advisor) / Tamizhmani, Govindasamy (Thesis advisor) / Honsberg, Christiana (Committee member) / Hacke, Peter (Committee member) / Schroder, Dieter (Committee member) / Arizona State University (Publisher)
Created2016
Description
The popularity of solar photovoltaic (PV) energy is growing across the globe with more than 500 GW installed in 2018 with a capacity of 640 GW in 2019. Improved PV module reliability minimizes the levelized cost of energy. Studying and accelerating encapsulant browning and solder bond degradation—two of the most commonly observed degradation modes in the field—in a lab requires replicating the stress conditions that induce the same field degradation modes in a controlled accelerated environment to reduce testing time.
Accelerated testing is vital in learning about the reliability of solar PV modules. The unique streamlined approach taken saves time and resources with a statistically significant number of samples being tested in one chamber under multiple experimental stress conditions that closely mirror field conditions that induce encapsulant browning and solder bond degradation. With short circuit current (Isc) and series resistance (Rs) degradation data sets at multiple temperatures, the activation energies (Ea) for encapsulant browning and solder bond degradation was calculated.
Regular degradation was replaced by the wear-out stages of encapsulant browning and solder bond degradation by subjecting two types of field-aged modules to further accelerated testing. For browning, the Ea calculated through the Arrhenius model was 0.37 ± 0.17 eV and 0.71 ± 0.07 eV. For solder bond degradation, the Arrhenius model was used to calculate an Ea of 0.12 ± 0.05 eV for solder with 2wt% Ag and 0.35 ± 0.04 eV for Sn60Pb40 solder.
To study the effect of types of encapsulant, backsheet, and solder on encapsulant browning and solder bond degradation, 9-cut-cell samples maximizing available data points while minimizing resources underwent accelerated tests described for modules. A ring-like browning feature was observed in samples with UV pass EVA above and UV cut EVA below the cells. The backsheet permeability influences the extent of oxygen photo-bleaching. In samples with solder bond degradation, increased bright spots and cell darkening resulted in increased Rs. Combining image processing with fluorescence imaging and electroluminescence imaging would yield great insight into the two degradation modes.
Accelerated testing is vital in learning about the reliability of solar PV modules. The unique streamlined approach taken saves time and resources with a statistically significant number of samples being tested in one chamber under multiple experimental stress conditions that closely mirror field conditions that induce encapsulant browning and solder bond degradation. With short circuit current (Isc) and series resistance (Rs) degradation data sets at multiple temperatures, the activation energies (Ea) for encapsulant browning and solder bond degradation was calculated.
Regular degradation was replaced by the wear-out stages of encapsulant browning and solder bond degradation by subjecting two types of field-aged modules to further accelerated testing. For browning, the Ea calculated through the Arrhenius model was 0.37 ± 0.17 eV and 0.71 ± 0.07 eV. For solder bond degradation, the Arrhenius model was used to calculate an Ea of 0.12 ± 0.05 eV for solder with 2wt% Ag and 0.35 ± 0.04 eV for Sn60Pb40 solder.
To study the effect of types of encapsulant, backsheet, and solder on encapsulant browning and solder bond degradation, 9-cut-cell samples maximizing available data points while minimizing resources underwent accelerated tests described for modules. A ring-like browning feature was observed in samples with UV pass EVA above and UV cut EVA below the cells. The backsheet permeability influences the extent of oxygen photo-bleaching. In samples with solder bond degradation, increased bright spots and cell darkening resulted in increased Rs. Combining image processing with fluorescence imaging and electroluminescence imaging would yield great insight into the two degradation modes.
ContributorsGopalakrishna, Hamsini (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Rogers, Bradley (Committee member) / Hacke, Peter (Committee member) / Arizona State University (Publisher)
Created2020
Description
This is a two part thesis:
Part 1 of this thesis determines the most dominant failure modes of field aged photovoltaic (PV) modules using experimental data and statistical analysis, FMECA (Failure Mode, Effect, and Criticality Analysis). The failure and degradation modes of about 5900 crystalline-Si glass/polymer modules fielded for 6 to 16 years in three different photovoltaic (PV) power plants with different mounting systems under the hot-dry desert climate of Arizona are evaluated. A statistical reliability tool, FMECA that uses Risk Priority Number (RPN) is performed for each PV power plant to determine the dominant failure modes in the modules by means of ranking and prioritizing the modes. This study on PV power plants considers all the failure and degradation modes from both safety and performance perspectives, and thus, comes to the conclusion that solder bond fatigue/failure with/without gridline/metallization contact fatigue/failure is the most dominant failure mode for these module types in the hot-dry desert climate of Arizona.
Part 2 of this thesis determines the best method to compute degradation rates of PV modules. Three different PV systems were evaluated to compute degradation rates using four methods and they are: I-V measurement, metered kWh, performance ratio (PR) and performance index (PI). I-V method, being an ideal method for degradation rate computation, were compared to the results from other three methods. The median degradation rates computed from kWh method were within ±0.15% from I-V measured degradation rates (0.9-1.37 %/year of three models). Degradation rates from the PI method were within ±0.05% from the I-V measured rates for two systems but the calculated degradation rate was remarkably different (±1%) from the I-V method for the third system. The degradation rate from the PR method was within ±0.16% from the I-V measured rate for only one system but were remarkably different (±1%) from the I-V measured rate for the other two systems. Thus, it was concluded that metered raw kWh method is the best practical method, after I-V method and PI method (if ground mounted POA insolation and other weather data are available) for degradation computation as this method was found to be fairly accurate, easy, inexpensive, fast and convenient.
Part 1 of this thesis determines the most dominant failure modes of field aged photovoltaic (PV) modules using experimental data and statistical analysis, FMECA (Failure Mode, Effect, and Criticality Analysis). The failure and degradation modes of about 5900 crystalline-Si glass/polymer modules fielded for 6 to 16 years in three different photovoltaic (PV) power plants with different mounting systems under the hot-dry desert climate of Arizona are evaluated. A statistical reliability tool, FMECA that uses Risk Priority Number (RPN) is performed for each PV power plant to determine the dominant failure modes in the modules by means of ranking and prioritizing the modes. This study on PV power plants considers all the failure and degradation modes from both safety and performance perspectives, and thus, comes to the conclusion that solder bond fatigue/failure with/without gridline/metallization contact fatigue/failure is the most dominant failure mode for these module types in the hot-dry desert climate of Arizona.
Part 2 of this thesis determines the best method to compute degradation rates of PV modules. Three different PV systems were evaluated to compute degradation rates using four methods and they are: I-V measurement, metered kWh, performance ratio (PR) and performance index (PI). I-V method, being an ideal method for degradation rate computation, were compared to the results from other three methods. The median degradation rates computed from kWh method were within ±0.15% from I-V measured degradation rates (0.9-1.37 %/year of three models). Degradation rates from the PI method were within ±0.05% from the I-V measured rates for two systems but the calculated degradation rate was remarkably different (±1%) from the I-V method for the third system. The degradation rate from the PR method was within ±0.16% from the I-V measured rate for only one system but were remarkably different (±1%) from the I-V measured rate for the other two systems. Thus, it was concluded that metered raw kWh method is the best practical method, after I-V method and PI method (if ground mounted POA insolation and other weather data are available) for degradation computation as this method was found to be fairly accurate, easy, inexpensive, fast and convenient.
ContributorsShrestha, Sanjay (Author) / Tamizhmani, Govindsamy (Thesis advisor) / Srinivasan, Devrajan (Committee member) / Rogers, Bradley (Committee member) / Arizona State University (Publisher)
Created2014