Matching Items (5)
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- All Subjects: Reliability
- Creators: Schroder, Dieter
- Creators: Kaloush, Kamil
Description
Electromigration in metal interconnects is the most pernicious failure mechanism in semiconductor integrated circuits (ICs). Early electromigration investigations were primarily focused on aluminum interconnects for silicon-based ICs. An alternative metallization compatible with gallium arsenide (GaAs) was required in the development of high-powered radio frequency (RF) compound semiconductor devices operating at higher current densities and elevated temperatures. Gold-based metallization was implemented on GaAs devices because it uniquely forms a very low resistance ohmic contact and gold interconnects have superior electrical and thermal conductivity properties. Gold (Au) was also believed to have improved resistance to electromigration due to its higher melting temperature, yet electromigration reliability data on passivated Au interconnects is scarce and inadequate in the literature. Therefore, the objective of this research was to characterize the electromigration lifetimes of passivated Au interconnects under precisely controlled stress conditions with statistically relevant quantities to obtain accurate model parameters essential for extrapolation to normal operational conditions. This research objective was accomplished through measurement of electromigration lifetimes of large quantities of passivated electroplated Au interconnects utilizing high-resolution in-situ resistance monitoring equipment. Application of moderate accelerated stress conditions with a current density limited to 2 MA/cm2 and oven temperatures in the range of 300°C to 375°C avoided electrical overstress and severe Joule-heated temperature gradients. Temperature coefficients of resistance (TCRs) were measured to determine accurate Joule-heated Au interconnect film temperatures. A failure criterion of 50% resistance degradation was selected to prevent thermal runaway and catastrophic metal ruptures that are problematic of open circuit failure tests. Test structure design was optimized to reduce resistance variation and facilitate failure analysis. Characterization of the Au microstructure yielded a median grain size of 0.91 ìm. All Au lifetime distributions followed log-normal distributions and Black's model was found to be applicable. An activation energy of 0.80 ± 0.05 eV was measured from constant current electromigration tests at multiple temperatures. A current density exponent of 1.91 was extracted from multiple current densities at a constant temperature. Electromigration-induced void morphology along with these model parameters indicated grain boundary diffusion is dominant and the void nucleation mechanism controlled the failure time.
ContributorsKilgore, Stephen (Author) / Adams, James (Thesis advisor) / Schroder, Dieter (Thesis advisor) / Krause, Stephen (Committee member) / Gaw, Craig (Committee member) / Arizona State University (Publisher)
Created2013
Description
Deterministic solutions are available to estimate the resilient modulus of unbound materials, which are difficult to interpret because they do not incorporate the variability associated with the inherent soil heterogeneity and that associated with environmental conditions. This thesis presents the stochastic evaluation of the Enhanced Integrated Climatic Model (EICM), which is a model used in the Mechanistic-Empirical Pavement Design Guide to estimate the soil long-term equilibrium resilient modulus. The stochastic evaluation is accomplished by taking the deterministic equations in the EICM and applying stochastic procedures to obtain a mean and variance associated with the final design parameter, the resilient modulus at equilibrium condition. In addition to the stochastic evaluation, different statistical analyses were applied to determine that the uses of hierarchical levels are valid in the unbound pavement material design and the climatic region has an impact on the final design resilient moduli at equilibrium. After determining that the climatic regions and the hierarchical levels are valid, reliability was applied to the resilient moduli at equilibrium. Finally, the American Association of State Highway and Transportation Officials (AASHTO) design concept based on the Structural Number (SN) was applied in order to illustrate the true implications the hierarchical levels of design and the variability associated with environmental effects and soil properties have in the design of pavement structures. The stochastic solutions developed as part of this thesis work together with the SN design concept were applied to five soils with different resilient moduli at optimum compaction condition in order to evaluate the variability associated with the resilient moduli at equilibrium condition. These soils were evaluated in five different climatic regions ranging from arid to extremely wet conditions. The analysis showed that by using the most accurate input parameters obtained from laboratory testing (hierarchical Level 1) instead of Level 3 analysis could potentially save the State Department of Transportation up to 10.12 inches of asphalt in arid and semi-arid regions.
ContributorsRosenbalm, Daniel (Author) / Zapata, Claudia (Thesis advisor) / Witczak, Matthew (Committee member) / Kaloush, Kamil (Committee member) / Arizona State University (Publisher)
Created2011
Description
This dissertation addresses challenges pertaining to multi-junction (MJ) solar cells from material development to device design and characterization. Firstly, among the various methods to improve the energy conversion efficiency of MJ solar cells using, a novel approach proposed recently is to use II-VI (MgZnCd)(SeTe) and III-V (AlGaIn)(AsSb) semiconductors lattice-matched on GaSb or InAs substrates for current-matched subcells with minimal defect densities. CdSe/CdTe superlattices are proposed as a potential candidate for a subcell in the MJ solar cell designs using this material system, and therefore the material properties of the superlattices are studied. The high structural qualities of the superlattices are obtained from high resolution X-ray diffraction measurements and cross-sectional transmission electron microscopy images. The effective bandgap energies of the superlattices obtained from the photoluminescence (PL) measurements vary with the layer thicknesses, and are smaller than the bandgap energies of either the constituent material. Furthermore, The PL peak position measured at the steady state exhibits a blue shift that increases with the excess carrier concentration. These results confirm a strong type-II band edge alignment between CdSe and CdTe. The valence band offset between unstrained CdSe and CdTe is determined as 0.63 eV±0.06 eV by fitting the measured PL peak positions using the Kronig-Penney model. The blue shift in PL peak position is found to be primarily caused by the band bending effect based on self-consistent solutions of the Schrödinger and Poisson equations. Secondly, the design of the contact grid layout is studied to maximize the power output and energy conversion efficiency for concentrator solar cells. Because the conventional minimum power loss method used for the contact design is not accurate in determining the series resistance loss, a method of using a distributed series resistance model to maximize the power output is proposed for the contact design. It is found that the junction recombination loss in addition to the series resistance loss and shadowing loss can significantly affect the contact layout. The optimal finger spacing and maximum efficiency calculated by the two methods are close, and the differences are dependent on the series resistance and saturation currents of solar cells. Lastly, the accurate measurements of external quantum efficiency (EQE) are important for the design and development of MJ solar cells. However, the electrical and optical couplings between the subcells have caused EQE measurement artifacts. In order to interpret the measurement artifacts, DC and small signal models are built for the bias condition and the scan of chopped monochromatic light in the EQE measurements. Characterization methods are developed for the device parameters used in the models. The EQE measurement artifacts are found to be caused by the shunt and luminescence coupling effects, and can be minimized using proper voltage and light biases. Novel measurement methods using a pulse voltage bias or a pulse light bias are invented to eliminate the EQE measurement artifacts. These measurement methods are nondestructive and easy to implement. The pulse voltage bias or pulse light bias is superimposed on the conventional DC voltage and light biases, in order to control the operating points of the subcells and counterbalance the effects of shunt and luminescence coupling. The methods are demonstrated for the first time to effectively eliminate the measurement artifacts.
ContributorsLi, Jingjing (Author) / Zhang, Yong-Hang (Thesis advisor) / Tao, Meng (Committee member) / Schroder, Dieter (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2012
Description
The fatigue resistance of asphalt concrete (AC) plays an important role in the service life of a pavement. For predicting the fatigue life of AC, there are several existing empirical and mechanistic models. However, the assessment and quantification of the ‘reliability’ of the predictions from these models is a substantial knowledge gap. The importance of reliability in AC material performance predictions becomes all the more important in light of limited monetary and material resources. The goal of this dissertation research is to address these shortcomings by developing a framework for incorporating reliability into the prediction of mechanical models for AC and to improve the reliability of AC material performance prediction by using Fine Aggregate Matrix (FAM) phase data. The goal of the study is divided into four objectives; 1) development of a reliability framework for fatigue life prediction of AC materials using the simplified viscoelastic continuum damage (S-VECD) model, 2) development of test protocols for FAM in similar loading conditions as AC, 3) evaluation of the mechanical linkages between the AC and FAM mix through upscaling analysis, and 4) investigation of the hypothesis that the reliability of fatigue life prediction of AC can be improved with FAM data modeling.
In this research effort, a reliability framework is developed using Monte Carlo simulation for predicting the fatigue life of AC material using the S-VECD model. The reliability analysis reveals that the fatigue life prediction is very sensitive to the uncertainty in the input variables. FAM testing in similar loading conditions as AC, and upscaling of AC modulus and damage response using FAM properties from a relatively simple homogenized continuum approach shows promising results. The FAM phase fatigue life prediction and upscaling of FAM results to AC show more reliable fatigue life prediction than the fatigue life prediction of AC material using its experimental data. To assess the sensitivity of fatigue life prediction model to uncertainty in the input variables, a parametric sensitivity study is conducted on the S-VECD model. Overall, the findings from this research show promising results both in terms of upscaling FAM to AC properties and the reliability of fatigue prediction in AC using experimental data on FAM.
In this research effort, a reliability framework is developed using Monte Carlo simulation for predicting the fatigue life of AC material using the S-VECD model. The reliability analysis reveals that the fatigue life prediction is very sensitive to the uncertainty in the input variables. FAM testing in similar loading conditions as AC, and upscaling of AC modulus and damage response using FAM properties from a relatively simple homogenized continuum approach shows promising results. The FAM phase fatigue life prediction and upscaling of FAM results to AC show more reliable fatigue life prediction than the fatigue life prediction of AC material using its experimental data. To assess the sensitivity of fatigue life prediction model to uncertainty in the input variables, a parametric sensitivity study is conducted on the S-VECD model. Overall, the findings from this research show promising results both in terms of upscaling FAM to AC properties and the reliability of fatigue prediction in AC using experimental data on FAM.
ContributorsGudipudi, Padmini Priyadarsini (Author) / Underwood, Benjamin S (Thesis advisor) / Kaloush, Kamil (Committee member) / Mamlouk, Michael (Committee member) / Neithalath, Narayanan (Committee member) / Arizona State University (Publisher)
Created2016
Description
Potential-Induced Degradation (PID) is an extremely serious photovoltaic (PV) durability issue significantly observed in crystalline silicon PV modules due to its rapid power degradation, particularly when compared to other PV degradation modes. The focus of this dissertation is to understand PID mechanisms and to develop PID-free cells and modules. PID-affected modules have been claimed to be fully recovered by high temperature and reverse potential treatments. However, the results obtained in this work indicate that the near-full recovery of efficiency can be achieved only at high irradiance conditions, but the full recovery of efficiency at low irradiance levels, of shunt resistance, and of quantum efficiency (QE) at short wavelengths could not be achieved. The QE loss observed at short wavelengths was modeled by changing the front surface recombination velocity. The QE scaling error due to a measurement on a PID shunted cell was addressed by developing a very low input impedance accessory applicable to an existing QE system. The impacts of silicon nitride (SiNx) anti-reflection coating (ARC) refractive index (RI) and emitter sheet resistance on PID are presented. Low RI ARC cells (1.87) were observed to be PID-susceptible whereas high RI ARC cells (2.05) were determined to be PID-resistant using a method employing high dose corona charging followed by time-resolved measurement of surface voltage. It has been demonstrated that the PID could be prevented by deploying an emitter having a low sheet resistance (~ 60 /sq) even if a PID-susceptible ARC is used in a cell. Secondary ion mass spectroscopy (SIMS) results suggest that a high phosphorous emitter layer hinders sodium transport, which is responsible for the PID. Cells can be screened for PID susceptibility by illuminated lock-in thermography (ILIT) during the cell fabrication process, and the sample structure for this can advantageously be simplified as long as the sample has the SiNx ARC and an aluminum back surface field. Finally, this dissertation presents a prospective method for eliminating or minimizing the PID issue either in the factory during manufacturing or in the field after system installation. The method uses commercially available, thin, and flexible Corning® Willow® Glass sheets or strips on the PV module glass superstrates, disrupting the current leakage path from the cells to the grounded frame.
ContributorsOh, Jaewon (Author) / Bowden, Stuart (Thesis advisor) / Tamizhmani, Govindasamy (Thesis advisor) / Honsberg, Christiana (Committee member) / Hacke, Peter (Committee member) / Schroder, Dieter (Committee member) / Arizona State University (Publisher)
Created2016