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- Genre: Masters Thesis
Description
ABSTRACT The D flip flop acts as a sequencing element while designing any pipelined system. Radiation Hardening by Design (RHBD) allows hardened circuits to be fabricated on commercially available CMOS manufacturing process. Recently, single event transients (SET's) have become as important as single event upset (SEU) in radiation hardened high speed digital designs. A novel temporal pulse based RHBD flip-flop design is presented. Temporally delayed pulses produced by a radiation hardened pulse generator design samples the data in three redundant pulse latches. The proposed RHBD flip-flop has been statistically designed and fabricated on 90 nm TSMC LP process. Detailed simulations of the flip-flop operation in both normal and radiation environments are presented. Spatial separation of critical nodes for the physical design of the flip-flop is carried out for mitigating multi-node charge collection upsets. The proposed flip-flop is also used in commercial CAD flows for high performance chip designs. The proposed flip-flop is used in the design and auto-place-route (APR) of an advanced encryption system and the metrics analyzed.
ContributorsKumar, Sushil (Author) / Clark, Lawrence (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2014
Description
Microprocessors are the processing heart of any digital system and are central to all the technological advancements of the age including space exploration and monitoring. The demands of space exploration require a special class of microprocessors called radiation hardened microprocessors which are less susceptible to radiation present outside the earth's atmosphere, in other words their functioning is not disrupted even in presence of disruptive radiation. The presence of these particles forces the designers to come up with design techniques at circuit and chip levels to alleviate the errors which can be encountered in the functioning of microprocessors. Microprocessor evolution has been very rapid in terms of performance but the same cannot be said about its rad-hard counterpart. With the total data processing capability overall increasing rapidly, the clear lack of performance of the processors manifests as a bottleneck in any processing system. To design high performance rad-hard microprocessors designers have to overcome difficult design problems at various design stages i.e. Architecture, Synthesis, Floorplanning, Optimization, routing and analysis all the while maintaining circuit radiation hardness. The reference design `HERMES' is targeted at 90nm IBM G process and is expected to reach 500Mhz which is twice as fast any processor currently available. Chapter 1 talks about the mechanisms of radiation effects which cause upsets and degradation to the functioning of digital circuits. Chapter 2 gives a brief description of the components which are used in the design and are part of the consistent efforts at ASUVLSI lab culminating in this chip level implementation of the design. Chapter 3 explains the basic digital design ASIC flow and the changes made to it leading to a rad-hard specific ASIC flow used in implementing this chip. Chapter 4 talks about the triple mode redundant (TMR) specific flow which is used in the block implementation, delineating the challenges faced and the solutions proposed to make the flow work. Chapter 5 explains the challenges faced and solutions arrived at while using the top-level flow described in chapter 3. Chapter 6 puts together the results and analyzes the design in terms of basic integrated circuit design constraints.
ContributorsRamamurthy, Chandarasekaran (Author) / Clark, Lawrence T (Thesis advisor) / Holbert, Keith E. (Committee member) / Barnaby, Hugh J (Committee member) / Mayhew, David (Committee member) / Arizona State University (Publisher)
Created2013
Description
Circuits on smaller technology nodes become more vulnerable to radiation-induced upset. Since this is a major problem for electronic circuits used in space applications, designers have a variety of solutions in hand. Radiation hardening by design (RHBD) is an approach, where electronic components are designed to work properly in certain radiation environments without the use of special fabrication processes. This work focuses on the cache design for a high performance microprocessor. The design tries to mitigate radiation effects like SEE, on a commercial foundry 45 nm SOI process. The design has been ported from a previously done cache design at the 90 nm process node. The cache design is a 16 KB, 4 way set associative, write-through design that uses a no-write allocate policy. The cache has been tested to write and read at above 2 GHz at VDD = 0.9 V. Interleaved layout, parity protection, dual redundancy, and checking circuits are used in the design to achieve radiation hardness. High speed is accomplished through the use of dynamic circuits and short wiring routes wherever possible. Gated clocks and optimized wire connections are used to reduce power. Structured methodology is used to build up the entire cache.
ContributorsXavier, Jerin (Author) / Clark, Lawrence T (Thesis advisor) / Cao, Yu (Committee member) / Allee, David R. (Committee member) / Arizona State University (Publisher)
Created2012
Description
Point of Load (PoL) converters are important components to the power distribution system in computer power supplies as well as automotive, space, nuclear, and medical electronics. These converters often require high output current capability, low form factor, and high conversion ratios (step-down) without sacrificing converter efficiency. This work presents hybrid silicon/gallium nitride (CMOS/GaN) power converter architectures as a solution for high-current, small form-factor PoL converters. The presented topologies use discrete GaN power devices and CMOS integrated drivers and controller loop. The presented power converters operate in the tens of MHz range to reduce the form factor by reducing the size of the off-chip passive inductor and capacitor. Higher conversion ratio is achieved through a fast control loop and the use of GaN power devices that exhibit low parasitic gate capacitance and minimize pulse swallowing.
This work compares three discrete buck power converter architectures: single-stage, multi-phase with 2 phases, and stacked-interleaved, using components-off-the-shelf (COTS). Each of the implemented power converters achieves over 80% peak efficiency with switching speeds up-to 10MHz for high conversion ratio from 24V input to 5V output and maximum load current of 10A. The performance of the three architectures is compared in open loop and closed loop configurations with respect to efficiency, output voltage ripple, and power stage form factor.
Additionally, this work presents an integrated CMOS gate driver solution in CMOS 0.35um technology. The CMOS integrated circuit (IC) includes the gate driver and the closed loop controller for directly driving a single-stage GaN architecture. The designed IC efficiently drives the GaN devices up to 20MHz switching speeds. The presented controller technique uses voltage mode control with an innovative cascode driver architecture to allow a 3.3V CMOS devices to effectively drive GaN devices that require 5V gate signal swing. Furthermore, the designed power converter is expected to operate under 400MRad of total dose, thus enabling its use in high-radiation environments for the large hadron collider at CERN and nuclear facilities.
This work compares three discrete buck power converter architectures: single-stage, multi-phase with 2 phases, and stacked-interleaved, using components-off-the-shelf (COTS). Each of the implemented power converters achieves over 80% peak efficiency with switching speeds up-to 10MHz for high conversion ratio from 24V input to 5V output and maximum load current of 10A. The performance of the three architectures is compared in open loop and closed loop configurations with respect to efficiency, output voltage ripple, and power stage form factor.
Additionally, this work presents an integrated CMOS gate driver solution in CMOS 0.35um technology. The CMOS integrated circuit (IC) includes the gate driver and the closed loop controller for directly driving a single-stage GaN architecture. The designed IC efficiently drives the GaN devices up to 20MHz switching speeds. The presented controller technique uses voltage mode control with an innovative cascode driver architecture to allow a 3.3V CMOS devices to effectively drive GaN devices that require 5V gate signal swing. Furthermore, the designed power converter is expected to operate under 400MRad of total dose, thus enabling its use in high-radiation environments for the large hadron collider at CERN and nuclear facilities.
ContributorsHegde, Ashwath (Author) / Kitchen, Jennifer (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2018
Description
Digital systems are essential to the technological advancements in space exploration. Microprocessor and flash memory are the essential parts of such a digital system. Space exploration requires a special class of radiation hardened microprocessors and flash memories, which are not functionally disrupted in the presence of radiation. The reference design ‘HERMES’ is a radiation-hardened microprocessor with performance comparable to commercially available designs. The reference design ‘eFlash’ is a prototype of soft-error hardened flash memory for configuring Xilinx FPGAs. These designs are manufactured using a foundry bulk CMOS 90-nm low standby power (LP) process. This thesis presents the post-silicon validation results of these designs.
ContributorsGogulamudi, Anudeep Reddy (Author) / Clark, Lawrence T (Thesis advisor) / Holbert, Keith E. (Committee member) / Brunhaver, John (Committee member) / Arizona State University (Publisher)
Created2016
Description
Radiation hardening by design (RHBD) has become a necessary practice when creating circuits to operate within radiated environments. While employing RHBD techniques has tradeoffs between size, speed and power, novel designs help to minimize these penalties. Space radiation is the primary source of radiation errors in circuits and two types of single event effects, single event upsets (SEU), and single event transients (SET) are increasingly becoming a concern. While numerous methods currently exist to nullify SEUs and SETs, special consideration to the techniques of temporal hardening and interlocking are explored in this thesis. Temporal hardening mitigates both SETs and SEUs by spacing critical nodes through the use of delay elements, thus allowing collected charge to be removed. Interlocking creates redundant nodes to rectify charge collection on one single node. This thesis presents an innovative, temporally hardened D flip-flop (TFF). The TFF physical design is laid out in the 130 nm TSMC process in the form of an interleaved multi-bit cell and the circuitry necessary for the flip-flop to be hardened against SETs and SEUs is analyzed with simulations verifying these claims. Comparisons are made to an unhardened D flip-flop through speed, size, and power consumption depicting how the RHBD technique used increases all three over an unhardened flip-flop. Finally, the blocks from both the hardened and the unhardened flip-flops being placed in Synthesis and auto-place and route (APR) design flows are compared through size and speed to show the effects of using the high density multi-bit layout. Finally, the TFF presented in this thesis is compared to two other flip-flops, the majority voter temporal/DICE flip-flop (MTDFF) and the C-element temporal/DICE flip-flop (CTDFF). These circuits are built on the same 130 nm TSMC process as the TFF and then analyzed by the same methods through speed, size, and power consumption and compared to the TFF and unhardened flip-flops. Simulations are completed on the MTDFF and CTDFF to show their strengths against D node SETs and SEUs as well as their weakness against CLK node SETs. Results show that the TFF is faster and harder than both the MTDFF and CTDFF.
ContributorsMatush, Bradley (Author) / Clark, Lawrence T (Thesis advisor) / Allee, David (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2010
Description
An integrated methodology combining redundant clock tree synthesis and pulse clocked latches mitigates both single event upsets (SEU) and single event transients (SET) with reduced power consumption. This methodology helps to change the hardness of the design on the fly. This approach, with minimal additional overhead circuitry, has the ability to work in three different modes of operation depending on the speed, hardness and power consumption required by design. This was designed on 90nm low-standby power (LSP) process and utilized commercial CAD tools for testing. Spatial separation of critical nodes in the physical design of this approach mitigates multi-node charge collection (MNCC) upsets. An advanced encryption system implemented with the proposed design, compared to a previous design with non-redundant clock trees and local delay generation. The proposed approach reduces energy per operation up to 18% over an improved version of the prior approach, with negligible area impact. It can save up to 2/3rd of the power consumption and reach maximum possible frequency, when used in non-redundant mode of operation.
ContributorsGujja, Aditya (Author) / Clark, Lawrence T (Thesis advisor) / Holbert, Keith E. (Committee member) / Allee, David (Committee member) / Arizona State University (Publisher)
Created2015