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This research focuses on the stress and structure evolution observed in-situ during the earliest stages of thin film growth in Cu on Au(111)-reconstruction. For the research, an ultra high vacuum-scanning tunneling microscopy (UHV-STM) system was modified to have the additional capabilities of in-situ deposition and in-situ stress evolution monitoring. The

This research focuses on the stress and structure evolution observed in-situ during the earliest stages of thin film growth in Cu on Au(111)-reconstruction. For the research, an ultra high vacuum-scanning tunneling microscopy (UHV-STM) system was modified to have the additional capabilities of in-situ deposition and in-situ stress evolution monitoring. The design and fabrication processes for the modifications are explained in detail. The deposition source enabled imaging during the deposition of Cu thin films, while also being columnar enough to avoid negatively impacting the function of the microscope. It was found that the stress-induced changes in piezo voltage occurred over a substantially longer time scale and larger piezo scale than used during imaging, allowing for the deconvolution of the two sources of piezo voltage change. The intrinsic stress evolution observed at the onset of Cu growth was tensile in character and reached a maximum of 0.19 N/m at approximately 0.8ML, with an average tensile slope of 1.0GPa. As the film thickness increased beyond 0.8 ML, the stress became less tensile as the observation of disordered stripe and trigon patterns of misfit dislocations began to appear. The transport of atoms from the surface of enlarged Cu islands into the strained layer played an important role in this stage, because they effectively reduce the activation barrier for the formation of the observed surface structures. A rich array of structures were observed in the work presented here including stripe, disordered stripe and trigon patterns co-existing in a single Cu layer. Heteroepitaxial systems in existing literature showed a uniform structure in the single layer. The non-uniform structures in the single layer of this work may be attributed to the room temperature Cu growth, which can kinetically limit uniform pattern formation. The development of the UHV-STM system with additional capabilities for this work is expected to contribute to research for the stress and structure relationships of many other heteroepitaxial systems.
ContributorsNah, Jungwoo (Author) / Friesen, Cody (Thesis advisor) / Sieradzki, Karl (Committee member) / Bennett, Peter (Committee member) / Arizona State University (Publisher)
Created2012
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Description
This dissertation presents research findings regarding the exploitation of localized surface plasmon (LSP) of epitaxial Ag islands as a means to enhance the photoluminescence (PL) of Germanium (Ge) quantum dots (QDs). The first step of this project was to investigate the growth of Ag islands on Si(100). Two distinct families

This dissertation presents research findings regarding the exploitation of localized surface plasmon (LSP) of epitaxial Ag islands as a means to enhance the photoluminescence (PL) of Germanium (Ge) quantum dots (QDs). The first step of this project was to investigate the growth of Ag islands on Si(100). Two distinct families of Ag islands have been observed. “Big islands” are clearly faceted and have basal dimensions in the few hundred nm to μm range with a variety of basal shapes. “Small islands” are not clearly faceted and have basal diameters in the 10s of nm range. Big islands form via a nucleation and growth mechanism, and small islands form via precipitation of Ag contained in a planar layer between the big islands that is thicker than the Stranski-Krastanov layer existing at room-temperature.

The pseudodielectric functions of epitaxial Ag islands on Si(100) substrates were investigated with spectroscopic ellipsometry. Comparing the experimental pseudodielectric functions obtained for Si with and without Ag islands clearly identifies a plasmon mode with its dipole moment perpendicular to the surface. This observation is confirmed using a simulation based on the thin island film (TIF) theory. Another mode parallel to the surface may be identified by comparing the experimental pseudodielectric functions with the simulated ones from TIF theory. Additional results suggest that the LSP energy of Ag islands can be tuned from the ultra-violet to the infrared range by an amorphous Si (α-Si) cap layer.

Heterostructures were grown that incorporated Ge QDs, an epitaxial Si cap layer and Ag islands grown atop the Si cap layer. Optimum growth conditions for distinct Ge dot ensembles and Si cap layers were obtained. The density of Ag islands grown on the Si cap layer depends on its thickness. Factors contributing to this effect may include the average strain and Ge concentration on the surface of the Si cap layer.

The effects of the Ag LSP on the PL of Ge coherent domes were investigated for both α-Si capped and bare Ag islands. For samples with low-doped substrates, the LSPs reduce the Ge dot-related PL when the Si cap layer is below some critical thickness and have no effect on the PL when the Si cap layer is above the critical thickness. For samples grown on highly-doped wafers, the LSP of bare Ag islands enhanced the PL of Ge QDs by ~ 40%.
ContributorsKong, Dexin (Author) / Drucker, Jeffery (Thesis advisor) / Chen, Tingyong (Committee member) / Ros, Robert (Committee member) / Smith, David (Committee member) / Arizona State University (Publisher)
Created2015
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Description
The performance of kilometer-scale electron accelerators, which are used for high energy physics and next-generation light sources as well as meter-scale ultra-fast electron diffraction setups is limited by the brightness of electron sources. A potential emerging candidate for such applications is the family of alkali and bi-alkali antimonides. Much of

The performance of kilometer-scale electron accelerators, which are used for high energy physics and next-generation light sources as well as meter-scale ultra-fast electron diffraction setups is limited by the brightness of electron sources. A potential emerging candidate for such applications is the family of alkali and bi-alkali antimonides. Much of the physics of photoemission from such semiconductor photocathodes is not fully understood even today, which poses a hindrance to the complete exploration and optimization of their photoemission properties. This thesis presents the theoretical and experimental measurements which lead to advances in the understanding of the photoemission process and properties of cesium-antimonide photocathodes. First, the growth of high quantum efficiency (QE), atomically smooth and chemically homogeneous Cs$_3$Sb cathodes on lattice-matched strontium titanate substrates (STO) is demonstrated. The roughness-induced mean transverse energies (MTE) simulations indicate that the contribution to MTE from nanoscale surface roughness of Cs$_3$Sb cathodes grown on STO is inconsequential over typically used field gradients in photoinjectors. Second, the formulation of a new approach to model photoemission from cathodes with disordered surfaces is demonstrated. The model is used to explain near-threshold photoemission from thin film Cs$_3$Sb cathodes. This model suggests that the MTE values may get limited to higher values due to the defect density of states near the valence band maximum. Third, the detailed measurements of MTE and kinetic energy distribution spectra along with QE from Cs$_3$Sb cathodes using the photoemission electron microscope are presented. These measurements indicate that Cs$_3$Sb cathodes have a work function in the range of 1.5-1.6 eV. When photoemitting near this work function energy, the MTE nearly converges to the thermal limit of 26 meV. However, the QE is extremely low, of the order of 10$^{-7}$, which limits the operation of these photocathodes for high current applications. Lastly, the growth of Cs$_3$Sb cathodes using the ion beam assisted molecular beam deposition (IBA-MBE) technique is demonstrated. This technique has the potential to grow epitaxial Cs$_3$Sb cathodes in a more reproducible, easier fashion. Structural characterization of such cathodes via tools such as reflection high energy electron diffraction (RHEED) and x-ray diffraction (XRD) will be necessary to investigate the role of the IBA-MBE technique in facilitating the epitaxial, ordered growth of alkali-antimonides.
ContributorsSaha, Pallavi (Author) / Karkare, Siddharth (Thesis advisor) / Bennett, Peter (Committee member) / Nemanich, Robert (Committee member) / Kaindl, Robert (Committee member) / Arizona State University (Publisher)
Created2023