Matching Items (2)
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- All Subjects: GAN
- Genre: Masters Thesis
- Creators: Bakkaloglu, Bertan
Description
As residential photovoltaic (PV) systems become more and more common and widespread, their system architectures are being developed to maximize power extraction while keeping the cost of associated electronics to a minimum. An architecture that has become popular in recent years is the "DC optimizer" architecture, wherein one DC-DC converter is connected to the output of each PV module. The DC optimizer architecture has the advantage of performing maximum power-point tracking (MPPT) at the module level, without the high cost of using an inverter on each module (the "microinverter" architecture). This work details the design of a proposed DC optimizer. The design incorporates a series-input parallel-output topology to implement MPPT at the sub-module level. This topology has some advantages over the more common series-output DC optimizer, including relaxed requirements for the system's inverter. An autonomous control scheme is proposed for the series-connected converters, so that no external control signals are needed for the system to operate, other than sunlight. The DC optimizer in this work is designed with an emphasis on efficiency, and to that end it uses GaN FETs and an active clamp technique to reduce switching and conduction losses. As with any parallel-output converter, phase interleaving is essential to minimize output RMS current losses. This work proposes a novel phase-locked loop (PLL) technique to achieve interleaving among the series-input converters.
ContributorsLuster, Daniel (Author) / Ayyanar, Raja (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Kiaei, Sayfe (Committee member) / Arizona State University (Publisher)
Created2014
Description
This work analyzes and develops a point-of-load (PoL) synchronous buck converter using enhancement-mode Gallium Nitride (e-GaN), with emphasis on optimizing reverse conduction loss by using a well-known technique of placing an anti-parallel Schottky diode across the synchronous power device. This work develops an improved analytical switching model for the GaN-based converter with the Schottky diode using piecewise linear approximations.
To avoid a shoot-through between the power switches of the buck converter, a small dead-time is inserted between gate drive switching transitions. Despite optimum dead-time management for a power converter, optimum dead-times vary for different load conditions. These variations become considerably large for PoL applications, which demand high output current with low output voltages. At high switching frequencies, these variations translate into losses that contribute significantly to the total loss of the converter. To understand and quantify power loss in a hard-switching buck converter that uses a GaN power device in parallel with a Schottky diode, piecewise transitions are used to develop an analytical switching model that quantifies the contribution of reverse conduction loss of GaN during dead-time.
The effects of parasitic elements on the dynamics of the switching converter are investigated during one switching cycle of the converter. A designed prototype of a buck converter is correlated to the predicted model to determine the accuracy of the model. This comparison is presented using simulations and measurements at 400 kHz and 2 MHz converter switching speeds for load (1A) condition and fixed dead-time values. Furthermore, performance of the buck converter with and without the Schottky diode is also measured and compared to demonstrate and quantify the enhanced performance when using an anti-parallel diode. The developed power converter achieves peak efficiencies of 91.7% and 93.86% for 2 MHz and 400 KHz switching frequencies, respectively, and drives load currents up to 6A for a voltage conversion from 12V input to 3.3V output.
In addition, various industry Schottky diodes have been categorized based on their packaging and electrical characteristics and the developed analytical model provides analytical expressions relating the diode characteristics to power stage performance parameters. The performance of these diodes has been characterized for different buck converter voltage step-down ratios that are typically used in industry applications and different switching frequencies ranging from 400 KHz to 2 MHz.
To avoid a shoot-through between the power switches of the buck converter, a small dead-time is inserted between gate drive switching transitions. Despite optimum dead-time management for a power converter, optimum dead-times vary for different load conditions. These variations become considerably large for PoL applications, which demand high output current with low output voltages. At high switching frequencies, these variations translate into losses that contribute significantly to the total loss of the converter. To understand and quantify power loss in a hard-switching buck converter that uses a GaN power device in parallel with a Schottky diode, piecewise transitions are used to develop an analytical switching model that quantifies the contribution of reverse conduction loss of GaN during dead-time.
The effects of parasitic elements on the dynamics of the switching converter are investigated during one switching cycle of the converter. A designed prototype of a buck converter is correlated to the predicted model to determine the accuracy of the model. This comparison is presented using simulations and measurements at 400 kHz and 2 MHz converter switching speeds for load (1A) condition and fixed dead-time values. Furthermore, performance of the buck converter with and without the Schottky diode is also measured and compared to demonstrate and quantify the enhanced performance when using an anti-parallel diode. The developed power converter achieves peak efficiencies of 91.7% and 93.86% for 2 MHz and 400 KHz switching frequencies, respectively, and drives load currents up to 6A for a voltage conversion from 12V input to 3.3V output.
In addition, various industry Schottky diodes have been categorized based on their packaging and electrical characteristics and the developed analytical model provides analytical expressions relating the diode characteristics to power stage performance parameters. The performance of these diodes has been characterized for different buck converter voltage step-down ratios that are typically used in industry applications and different switching frequencies ranging from 400 KHz to 2 MHz.
ContributorsKoli, Gauri (Author) / Kitchen, Jennifer (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2020