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- Genre: Masters Thesis
- Creators: Arizona State University
- Creators: Chakraborty, Bijeta
- Member of: ASU Electronic Theses and Dissertations
Description
Photodetectors in the 1.7 to 4.0 μm range are being commercially developed on InP substrates to meet the needs of longer wavelength applications such as thermal and medical sensing. Currently, these devices utilize high indium content metamorphic Ga1-xInxAs (x > 0.53) layers to extend the wavelength range beyond the 1.7 μm achievable using lattice matched GaInAs. The large lattice mismatch required to reach the extended wavelengths results in photodetector materials that contain a large number of misfit dislocations. The low quality of these materials results in a large nonradiative Shockley Read Hall generation/recombination rate that is manifested as an undesirable large thermal noise level in these photodetectors. This work focuses on utilizing the different band structure engineering methods to design more efficient devices on InP substrates. One prospective way to improve photodetector performance at the extended wavelengths is to utilize lattice matched GaInAs/GaAsSb structures that have a type-II band alignment, where the ground state transition energy of the superlattice is smaller than the bandgap of either constituent material. Over the extended wavelength range of 2 to 3 μm this superlattice structure has an optimal period thickness of 3.4 to 5.2 nm and a wavefunction overlap of 0.8 to 0.4, respectively. In using a type-II superlattice to extend the cutoff wavelength there is a tradeoff between the wavelength reached and the electron-hole wavefunction overlap realized, and hence absorption coefficient achieved. This tradeoff and the subsequent reduction in performance can be overcome by two methods: adding bismuth to this type-II material system; applying strain on both layers in the system to attain strain-balanced condition. These allow the valance band alignment and hence the wavefunction overlap to be tuned independently of the wavelength cutoff. Adding 3% bismuth to the GaInAs constituent material, the resulting lattice matched Ga0.516In0.484As0.970Bi0.030/GaAs0.511Sb0.489superlattice realizes a 50% larger absorption coefficient. While as, similar results can be achieved with strain-balanced condition with strain limited to 1.9% on either layer. The optimal design rules derived from the different possibilities make it feasible to extract superlattice period thickness with the best absorption coefficient for any cutoff wavelength in the range.
ContributorsSharma, Ankur R (Author) / Johnson, Shane (Thesis advisor) / Goryll, Michael (Committee member) / Roedel, Ronald (Committee member) / Arizona State University (Publisher)
Created2013
Description
Efficiency of components is an ever increasing area of importance to portable applications, where a finite battery means finite operating time. Higher efficiency devices need to be designed that don't compromise on the performance that the consumer has come to expect. Class D amplifiers deliver on the goal of increased efficiency, but at the cost of distortion. Class AB amplifiers have low efficiency, but high linearity. By modulating the supply voltage of a Class AB amplifier to make a Class H amplifier, the efficiency can increase while still maintaining the Class AB level of linearity. A 92dB Power Supply Rejection Ratio (PSRR) Class AB amplifier and a Class H amplifier were designed in a 0.24um process for portable audio applications. Using a multiphase buck converter increased the efficiency of the Class H amplifier while still maintaining a fast response time to respond to audio frequencies. The Class H amplifier had an efficiency above the Class AB amplifier by 5-7% from 5-30mW of output power without affecting the total harmonic distortion (THD) at the design specifications. The Class H amplifier design met all design specifications and showed performance comparable to the designed Class AB amplifier across 1kHz-20kHz and 0.01mW-30mW. The Class H design was able to output 30mW into 16Ohms without any increase in THD. This design shows that Class H amplifiers merit more research into their potential for increasing efficiency of audio amplifiers and that even simple designs can give significant increases in efficiency without compromising linearity.
ContributorsPeterson, Cory (Author) / Bakkaloglu, Bertan (Thesis advisor) / Barnaby, Hugh (Committee member) / Kiaei, Sayfe (Committee member) / Arizona State University (Publisher)
Created2013
Description
Class D Amplifiers are widely used in portable systems such as mobile phones to achieve high efficiency. The demands of portable electronics for low power consumption to extend battery life and reduce heat dissipation mandate efficient, high-performance audio amplifiers. The high efficiency of Class D amplifiers (CDAs) makes them particularly attractive for portable applications. The Digital class D amplifier is an interesting solution to increase the efficiency of embedded systems. However, this solution is not good enough in terms of PWM stage linearity and power supply rejection. An efficient control is needed to correct the error sources in order to get a high fidelity sound quality in the whole audio range of frequencies. A fundamental analysis on various error sources due to non idealities in the power stage have been discussed here with key focus on Power supply perturbations driving the Power stage of a Class D Audio Amplifier. Two types of closed loop Digital Class D architecture for PSRR improvement have been proposed and modeled. Double sided uniform sampling modulation has been used. One of the architecture uses feedback around the power stage and the second architecture uses feedback into digital domain. Simulation & experimental results confirm that the closed loop PSRR & PS-IMD improve by around 30-40 dB and 25 dB respectively.
ContributorsChakraborty, Bijeta (Author) / Bakkaloglu, Bertan (Thesis advisor) / Garrity, Douglas (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2012
Description
In this thesis, a digital input class D audio amplifier system which has the ability
to reject the power supply noise and nonlinearly of the output stage is presented. The main digital class D feed-forward path is using the fully-digital sigma-delta PWM open loop topology. Feedback loop is used to suppress the power supply noise and harmonic distortions. The design is using global foundry 0.18um technology.
Based on simulation, the power supply rejection at 200Hz is about -49dB with
81dB dynamic range and -70dB THD+N. The full scale output power can reach as high as 27mW and still keep minimum -68dB THD+N. The system efficiency at full scale is about 82%.
to reject the power supply noise and nonlinearly of the output stage is presented. The main digital class D feed-forward path is using the fully-digital sigma-delta PWM open loop topology. Feedback loop is used to suppress the power supply noise and harmonic distortions. The design is using global foundry 0.18um technology.
Based on simulation, the power supply rejection at 200Hz is about -49dB with
81dB dynamic range and -70dB THD+N. The full scale output power can reach as high as 27mW and still keep minimum -68dB THD+N. The system efficiency at full scale is about 82%.
ContributorsBai, Jing (Author) / Bakkaloglu, Bertan (Thesis advisor) / Arizona State University (Publisher)
Created2015
Description
InAsBi is a narrow direct gap III-V semiconductor that has recently attracted considerable attention because its bandgap is tunable over a wide range of mid- and long-wave infrared wavelengths for optoelectronic applications. Furthermore, InAsBi can be integrated with other III-V materials and is potentially an alternative to commercial II-VI photodetector materials such as HgCdTe.
Several 1 μm thick, nearly lattice-matched InAsBi layers grown on GaSb are examined using Rutherford backscattering spectrometry and X-ray diffraction. Random Rutherford backscattering measurements indicate that the average Bi mole fraction ranges from 0.0503 to 0.0645 for the sample set, and ion channeling measurements indicate that the Bi atoms are substitutional. The X-ray diffraction measurements show a diffraction sideband near the main (004) diffraction peak, indicating that the Bi mole fraction is not laterally uniform in the layer. The average out of plane tetragonal distortion is determined by modeling the main and sideband diffraction peaks, from which the average unstrained lattice constant of each sample is determined. By comparing the Bi mole fraction measured by random Rutherford backscattering with the InAsBi lattice constant for the sample set, the lattice constant of zinc blende InBi is determined to be 6.6107 Å.
Several InAsBi quantum wells tensilely strained to the GaSb lattice constant with dilute quantities of Bi are characterized using photoluminescence spectroscopy. Investigation of the integrated intensity as a function of carrier excitation density spanning 5×1025 to 5×1026 cm-3 s-1 indicates radiative dominated recombination and high quantum efficiency over the 12 to 250 K temperature range. The bandgap of InAsBi is ascertained from the photoluminescence spectra and parameterized as a function of temperature using the Einstein single oscillator model. The dilute Bi mole fraction of the InAsBi quantum wells is determined by comparing the measured bandgap energy to that predicted by the valence band anticrossing model. The Bi mole fraction determined by photoluminescence agrees reasonably well with that estimated using secondary ion mass spectrometry.
Several 1 μm thick, nearly lattice-matched InAsBi layers grown on GaSb are examined using Rutherford backscattering spectrometry and X-ray diffraction. Random Rutherford backscattering measurements indicate that the average Bi mole fraction ranges from 0.0503 to 0.0645 for the sample set, and ion channeling measurements indicate that the Bi atoms are substitutional. The X-ray diffraction measurements show a diffraction sideband near the main (004) diffraction peak, indicating that the Bi mole fraction is not laterally uniform in the layer. The average out of plane tetragonal distortion is determined by modeling the main and sideband diffraction peaks, from which the average unstrained lattice constant of each sample is determined. By comparing the Bi mole fraction measured by random Rutherford backscattering with the InAsBi lattice constant for the sample set, the lattice constant of zinc blende InBi is determined to be 6.6107 Å.
Several InAsBi quantum wells tensilely strained to the GaSb lattice constant with dilute quantities of Bi are characterized using photoluminescence spectroscopy. Investigation of the integrated intensity as a function of carrier excitation density spanning 5×1025 to 5×1026 cm-3 s-1 indicates radiative dominated recombination and high quantum efficiency over the 12 to 250 K temperature range. The bandgap of InAsBi is ascertained from the photoluminescence spectra and parameterized as a function of temperature using the Einstein single oscillator model. The dilute Bi mole fraction of the InAsBi quantum wells is determined by comparing the measured bandgap energy to that predicted by the valence band anticrossing model. The Bi mole fraction determined by photoluminescence agrees reasonably well with that estimated using secondary ion mass spectrometry.
ContributorsShalindar Christraj, Arvind Joshua Jaydev (Author) / Johnson, Shane R (Thesis advisor) / Alford, Terry L. (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2016
Description
Quantum computing is becoming more accessible through modern noisy intermediate scale quantum (NISQ) devices. These devices require substantial error correction and scaling before they become capable of fulfilling many of the promises that quantum computing algorithms make. This work investigates the current state of NISQ devices by implementing multiple classical computing scenarios with a quantum analog to observe how current quantum technology can be leveraged to achieve different tasks. First, quantum homomorphic encryption (QHE) is applied to the quantum teleportation protocol to show that this form of algorithm security is possible to implement with modern quantum computing simulators. QHE is capable of completely obscuring a teleported state with a liner increase in the number of qubit gates O(n). Additionally, the circuit depth increases minimally by only a constant factor O(c) when using only stabilizer circuits. Quantum machine learning (QML) is another potential application of NISQ technology that can be used to modify classical AI. QML is investigated using quantum hybrid neural networks for the classification of spoken commands on live audio data. Additionally, an edge computing scenario is examined to profile the interactions between a quantum simulator acting as a cloud server and an embedded processor board at the network edge. It is not practical to embed NISQ processors at a network edge, so this paradigm is important to study for practical quantum computing systems. The quantum hybrid neural network (QNN) learned to classify audio with equivalent accuracy (~94%) to a classical recurrent neural network. Introducing quantum simulation slows the systems responsiveness because it takes significantly longer to process quantum simulations than a classical neural network. This work shows that it is viable to implement classical computing techniques with quantum algorithms, but that current NISQ processing is sub-optimal when compared to classical methods.
ContributorsYarter, Maxwell (Author) / Spanias, Andreas (Thesis advisor) / Arenz, Christian (Committee member) / Dasarathy, Gautam (Committee member) / Arizona State University (Publisher)
Created2023
Description
Dynamical decoupling (DD) is a promising approach to mitigate the detrimental effects that interactions with the environment have on a quantum system. In DD, the finite-dimensional system is rotated about specified axes using strong and fast controls that eliminate system-environment interactions and protect the system fromdecoherence. In this thesis, the framework of DD is theoretically studied, and later it discusses how this framework can be implemented on an infinite-dimensional system that amplifies system components rather than suppressing them through quadrature squeezing operations. It begins by studying the impact of system-environment interactions on a quantum system, and then it analyzes how DD suppresses these interactions. The conditions for protecting a finite-dimensional system through DD are reviewed, and a numerical analysis of the DD conditions for simple systems is conducted. Using bang-bang controls, a framework for decoupling decoherence-inducing components from a general finite-dimensional system is studied. Later, following an overview of schemes that amplify the strength of a quantum signal through reversible
squeezing, a theoretical study of Hamiltonian Amplification (HA) for quantum harmonic oscillators is presented. By implementing the DD framework with squeezing operations, HA achieves speed-up in the dynamics of quantum harmonic oscillators, which translates into the strengthening of interactions between harmonic oscillators. Finally, the application of HA in amplifying the third-order nonlinearity in a Kerr medium is proposed to obtain a speed-up in the implementation of controlled phase gates for optical quantum computations. Numerically simulated results show that large amplification in nonlinearity is feasible with sufficient squeezing resources, completing the set of universal quantum gates in optical quantum computing.
ContributorsTiwari, Ankit (Author) / Arenz, Christian (Thesis advisor) / Sinha, Kanu (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2023
Description
In the Rare-earth-Tri-telluride family, (RTe3s) [R=La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Ho, Tm] the emergence of Charge Density Waves, (CDW) has been under investigation for a long time due to broadly tunable properties by either chemical substitution or pressure application. These quasi 2D Layered materials RTe3s undergo Fermi Surface Nesting leading to CDW instability. CDWs are electronic instabilities found in low-dimensional materials with highly anisotropic electronic structures. Since the CDW is predominantly driven by Fermi-surface (FS) nesting, it is especially sensitive to pressure-induced changes in the electronic structure. The FS of RTe3s is a function of p-orbitals of Tellurium atoms, which are arranged in two adjacent planes in the crystal structure. Although the FS and electronic structure possess a nearly four-fold symmetry, RTe3s form an incommensurate CDW.This dissertation is structured as follows: Chapter 1 includes basic ideas of Quantum materials, followed by an introduction to CDW and RTe3s. In Chapter 2, there are fundamentals of crystal growth by Chemical Vapor Transport, including various precursors, transport agent, temperature gradient, and rate of the reaction. After the growth, the crystals were confirmed for lattice vibrations by Raman, for composition by Energy Dispersive Spectroscopy; crystal structure and orientation were confirmed by X-ray Diffraction; magnetic ordering was established by Vibrating sample measurement. Detailed CDW study was done on various RTe3s by Raman spectroscopy. The basic mechanism and instrumentations used in these characterizations are explained in Chapter 3. Chapter 4 includes experimental data for crystal growth and results of these characterizations for Parent RTe3s. Chapter 5 includes fundamental insights on Cationic alloying of RTe3s, along with one alloy system’s crystal growth and characterization. This work tries to explain the behavior of CDW by a Temperature-dependent Raman study of RTe3s established the CDW transition temperature accompanied by Phonon softening; Angle-resolved Raman data confirming the nearly four-fold symmetry; thickness-dependent Raman spectroscopy resulting in the conclusion that as thickness decreases CDW transition temperature increases. Also, CDW transition is analyzed as a function of alloying.
ContributorsAttarde, Yashika (Author) / Tongay, Sefaattin (Thesis advisor) / Botana, Antia (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2021
Description
Amorphous materials can be uniformly deposited over a large area at lower cost compared to crystalline semiconductors (Silicon or Germanium). This property along with its high resistivity and wide band-gap found many applications in devices like rectifiers, xerography, xero-radiography, ultrahigh sensitivity optical cameras, digital radiography, and mammography (2D and 3D tomosynthesis). Amorphous selenium is the only amorphous material that undergoes impact ionization where only holes avalanche at high electric fields. This leads to a small excess noise factor which is a very important performance comparison matrix for avalanche photodetectors. Thus, there is a need to model high field avalanche process in amorphous selenium. At high fields, the transport in amorphous selenium changes from low values of activated trap-limited drift mobility to higher values of band transport mobility, via extended states. When the transport shifts from activated mobility with a high degree of localization to extended state band transport, the wavefunction of the amorphous material resembles that of its crystalline counterpart. To that effect, crystalline monoclinic selenium which has the closest resemblance to vapor deposited amorphous selenium has been studied. Modelling a crystalline semiconductor makes calculations simpler. The transport phenomena in crystalline monoclinic selenium is studied by using a bulk Monte Carlo technique to solve the semi-classical Boltzman Transport equation and thus calculate vital electrical parameters like mobility, critical field and mobility variations against temperatures. The band structure and the density of states function for monoclinic selenium was obtained by using an atomistic simulation tool, the Atomistic Toolkit in the Virtual Nano Lab, Quantum Wise, Copenhagen, Denmark. Moreover, the velocity and energy against time characteristics have been simulated for a wide range of electric fields (1-1000 $\frac{kV}{cm}$), which is further used to find the hole drift mobility. The low field mobility is obtained from the slope of the velocity vs. electric field plot. The low field hole mobility was calculated to be 5.51 $\frac{cm^{2}}{Vs}$ at room temperature. The experimental value for low field hole mobility is 7.29 $\frac{cm^{2}}{Vs}$. The energy versus electric field simulation at high fields is used to match the experimental onset of avalanche (754 $\frac{kV}{cm}$) for an ionization threshold energy of 2.1 eV. The Arrhenius plot for mobility against temperature is simulated and compared with published experimental data. The experimental and simulation results show a close match, thus validating the study.
ContributorsMukherjee, Atreyo (Author) / Vasileska, Dragica (Thesis advisor) / Goldan, Amirhossein (Thesis advisor) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2017
Description
Quantum computing holds the potential to revolutionize various industries by solving problems that classical computers cannot solve efficiently. However, building quantum computers is still in its infancy, and simulators are currently the best available option to explore the potential of quantum computing. Therefore, developing comprehensive benchmarking suites for quantum computing simulators is essential to evaluate their performance and guide the development of future quantum algorithms and hardware. This study presents a systematic evaluation of quantum computing simulators’ performance using a benchmarking suite. The benchmarking suite is designed to meet the industry-standard performance benchmarks established by the Defense Advanced Research Projects Agency (DARPA) and includes standardized test data and comparison metrics that encompass a wide range of applications, deep neural network models, and optimization techniques. The thesis is divided into two parts to cover basic quantum algorithms and variational quantum algorithms for practical machine-learning tasks. In the first part, the run time and memory performance of quantum computing simulators are analyzed using basic quantum algorithms. The performance is evaluated using standardized test data and comparison metrics that cover fundamental quantum algorithms, including Quantum Fourier Transform (QFT), Inverse Quantum Fourier Transform (IQFT), Quantum Adder, and Variational Quantum Eigensolver (VQE). The analysis provides valuable insights into the simulators’ strengths and weaknesses and highlights the need for further development to enhance their performance. In the second part, benchmarks are developed using variational quantum algorithms for practical machine learning tasks such as image classification, natural language processing, and recommendation. The benchmarks address several unique challenges posed by benchmarking quantum machine learning (QML), including the effect of optimizations on time-to-solution, the stochastic nature of training, the inclusion of hybrid quantum-classical layers, and the diversity of software and hardware systems. The findings offer valuable insights into the simulators’ ability to solve practical machine-learning tasks and pinpoint areas for future research and enhancement. In conclusion, this study provides a rigorous evaluation of quantum computing simulators’ performance using a benchmarking suite that meets industry-standard performance benchmarks.
ContributorsSathyakumar, Rajesh (Author) / Spanias, Andreas (Thesis advisor) / Sen, Arunabha (Thesis advisor) / Dasarathy, Gautam (Committee member) / Arizona State University (Publisher)
Created2023