Matching Items (395)
Description
The end of the nineteenth century was an exhilarating and revolutionary era for the flute. This period is the Second Golden Age of the flute, when players and teachers associated with the Paris Conservatory developed what would be considered the birth of the modern flute school. In addition, the founding in 1871 of the Société Nationale de Musique by Camille Saint-Saëns (1835-1921) and Romain Bussine (1830-1899) made possible the promotion of contemporary French composers. The founding of the Société des Instruments à Vent by Paul Taffanel (1844-1908) in 1879 also invigorated a new era of chamber music for wind instruments. Within this groundbreaking environment, Mélanie Hélène Bonis (pen name Mel Bonis) entered the Paris Conservatory in 1876, under the tutelage of César Franck (1822-1890). Many flutists are dismayed by the scarcity of repertoire for the instrument in the Romantic and post-Romantic traditions; they make up for this absence by borrowing the violin sonatas of Gabriel Fauré (1845-1924) and Franck. The flute and piano works of Mel Bonis help to fill this void with music composed originally for flute. Bonis was a prolific composer with over 300 works to her credit, but her works for flute and piano have not been researched or professionally recorded in the United States before the present study. Although virtually unknown today in the American flute community, Bonis's music received much acclaim from her contemporaries and deserves a prominent place in the flutist's repertoire. After a brief biographical introduction, this document examines Mel Bonis's musical style and describes in detail her six works for flute and piano while also offering performance suggestions.
ContributorsDaum, Jenna Elyse (Author) / Buck, Elizabeth (Thesis advisor) / Holbrook, Amy (Committee member) / Micklich, Albie (Committee member) / Schuring, Martin (Committee member) / Norton, Kay (Committee member) / Arizona State University (Publisher)
Created2013
Description
This work is focused on modeling the reliability concerns in GaN HEMT technology. The two main reliability concerns in GaN HEMTs are electromechanical coupling and current collapse. A theoretical model was developed to model the piezoelectric polarization charge dependence on the applied gate voltage. As the sheet electron density in the channel increases, the influence of electromechanical coupling reduces as the electric field in the comprising layers reduces. A Monte Carlo device simulator that implements the theoretical model was developed to model the transport in GaN HEMTs. It is observed that with the coupled formulation, the drain current degradation in the device varies from 2%-18% depending on the gate voltage. Degradation reduces with the increase in the gate voltage due to the increase in the electron gas density in the channel. The output and transfer characteristics match very well with the experimental data. An electro-thermal device simulator was developed coupling the Monte Caro-Poisson solver with the energy balance solver for acoustic and optical phonons. An output current degradation of around 2-3 % at a drain voltage of 5V due to self-heating was observed. It was also observed that the electrostatics near the gate to drain region of the device changes due to the hot spot created in the device from self heating. This produces an electric field in the direction of accelerating the electrons from the channel to surface states. This will aid to the current collapse phenomenon in the device. Thus, the electric field in the gate to drain region is very critical for reliable performance of the device. Simulations emulating the charging of the surface states were also performed and matched well with experimental data. Methods to improve the reliability performance of the device were also investigated in this work. A shield electrode biased at source potential was used to reduce the electric field in the gate to drain extension region. The hot spot position was moved away from the critical gate to drain region towards the drain as the shield electrode length and dielectric thickness were being altered.
ContributorsPadmanabhan, Balaji (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen M (Committee member) / Alford, Terry L. (Committee member) / Venkatraman, Prasad (Committee member) / Arizona State University (Publisher)
Created2013
ContributorsMatthews, Eyona (Performer) / Yoo, Katie Jihye (Performer) / Roubison, Ryan (Performer) / ASU Library. Music Library (Publisher)
Created2018-03-25
ContributorsHoeckley, Stephanie (Performer) / Lee, Juhyun (Performer) / ASU Library. Music Library (Publisher)
Created2018-03-24
Description
In semiconductor physics, many properties or phenomena of materials can be brought to light through certain changes in the materials. Having a tool to define new material properties so as to highlight certain phenomena greatly increases the ability to understand that phenomena. The generalized Monte Carlo tool allows the user to do that by keeping every parameter used to define a material, within the non-parabolic band approximation, a variable in the control of the user. A material is defined by defining its valleys, energies, valley effective masses and their directions. The types of scattering to be included can also be chosen. The non-parabolic band structure model is used. With the deployment of the generalized Monte Carlo tool onto www.nanoHUB.org the tool will be available to users around the world. This makes it a very useful educational tool that can be incorporated into curriculums. The tool is integrated with Rappture, to allow user-friendly access of the tool. The user can freely define a material in an easy systematic way without having to worry about the coding involved. The output results are automatically graphed and since the code incorporates an analytic band structure model, it is relatively fast. The versatility of the tool has been investigated and has produced results closely matching the experimental values for some common materials. The tool has been uploaded onto www.nanoHUB.org by integrating it with the Rappture interface. By using Rappture as the user interface, one can easily make changes to the current parameter sets to obtain even more accurate results.
ContributorsHathwar, Raghuraj (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen M (Committee member) / Saraniti, Marco (Committee member) / Arizona State University (Publisher)
Created2011
Description
Designing studies that use latent growth modeling to investigate change over time calls for optimal approaches for conducting power analysis for a priori determination of required sample size. This investigation (1) studied the impacts of variations in specified parameters, design features, and model misspecification in simulation-based power analyses and (2) compared power estimates across three common power analysis techniques: the Monte Carlo method; the Satorra-Saris method; and the method developed by MacCallum, Browne, and Cai (MBC). Choice of sample size, effect size, and slope variance parameters markedly influenced power estimates; however, level-1 error variance and number of repeated measures (3 vs. 6) when study length was held constant had little impact on resulting power. Under some conditions, having a moderate versus small effect size or using a sample size of 800 versus 200 increased power by approximately .40, and a slope variance of 10 versus 20 increased power by up to .24. Decreasing error variance from 100 to 50, however, increased power by no more than .09 and increasing measurement occasions from 3 to 6 increased power by no more than .04. Misspecification in level-1 error structure had little influence on power, whereas misspecifying the form of the growth model as linear rather than quadratic dramatically reduced power for detecting differences in slopes. Additionally, power estimates based on the Monte Carlo and Satorra-Saris techniques never differed by more than .03, even with small sample sizes, whereas power estimates for the MBC technique appeared quite discrepant from the other two techniques. Results suggest the choice between using the Satorra-Saris or Monte Carlo technique in a priori power analyses for slope differences in latent growth models is a matter of preference, although features such as missing data can only be considered within the Monte Carlo approach. Further, researchers conducting power analyses for slope differences in latent growth models should pay greatest attention to estimating slope difference, slope variance, and sample size. Arguments are also made for examining model-implied covariance matrices based on estimated parameters and graphic depictions of slope variance to help ensure parameter estimates are reasonable in a priori power analysis.
ContributorsVan Vleet, Bethany Lucía (Author) / Thompson, Marilyn S. (Thesis advisor) / Green, Samuel B. (Committee member) / Enders, Craig K. (Committee member) / Arizona State University (Publisher)
Created2011
ContributorsMcClain, Katelyn (Performer) / Buringrud, Deanna (Contributor) / Lee, Juhyun (Performer) / ASU Library. Music Library (Publisher)
Created2018-03-31
Description
The drive towards device scaling and large output power in millimeter and sub-millimeter wave power amplifiers results in a highly non-linear, out-of-equilibrium charge transport regime. Particle-based Full Band Monte Carlo device simulators allow an accurate description of this carrier dynamics at the nanoscale. This work initially compares GaN high electron mobility transistors (HEMTs) based on the established Ga-face technology and the emerging N-face technology, through a modeling approach that allows a fair comparison, indicating that the N-face devices exhibit improved performance with respect to Ga-face ones due to the natural back-barrier confinement that mitigates short-channel-effects. An investigation is then carried out on the minimum aspect ratio (i.e. gate length to gate-to-channel-distance ratio) that limits short channel effects in ultra-scaled GaN and InP HEMTs, indicating that this value in GaN devices is 15 while in InP devices is 7.5. This difference is believed to be related to the different dielectric properties of the two materials, and the corresponding different electric field distributions. The dielectric effects of the passivation layer in millimeter-wave, high-power GaN HEMTs are also investigated, finding that the effective gate length is increased by fringing capacitances, enhanced by the dielectrics in regions adjacent to the gate for layers thicker than 5 nm, strongly affecting the frequency performance of deep sub-micron devices. Lastly, efficient Full Band Monte Carlo particle-based device simulations of the large-signal performance of mm-wave transistor power amplifiers with high-Q matching networks are reported for the first time. In particular, a CellularMonte Carlo (CMC) code is self-consistently coupled with a Harmonic Balance (HB) frequency domain circuit solver. Due to the iterative nature of the HB algorithm, this simulation approach is possible only due to the computational efficiency of the CMC, which uses pre-computed scattering tables. On the other hand, HB allows the direct simulation of the steady-state behavior of circuits with long transient time. This work provides an accurate and efficient tool for the device early-stage design, which allows a computerbased performance evaluation in lieu of the extremely time-consuming and expensive iterations of prototyping and experimental large-signal characterization.
ContributorsGuerra, Diego (Author) / Saraniti, Marco (Thesis advisor) / Ferry, David K. (Committee member) / Goodnick, Stephen M (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2011
Description
Thermal effects in nano-scaled devices were reviewed and modeling methodologies to deal with this issue were discussed. The phonon energy balance equations model, being one of the important previous works regarding the modeling of heating effects in nano-scale devices, was derived. Then, detailed description was given on the Monte Carlo (MC) solution of the phonon Boltzmann Transport Equation. The phonon MC solver was developed next as part of this thesis. Simulation results of the thermal conductivity in bulk Si show good agreement with theoretical/experimental values from literature.
ContributorsYoo, Seung Kyung (Author) / Vasileska, Dragica (Thesis advisor) / Ferry, David (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2015
Description
Semiconductor nanowires have the potential to emerge as the building blocks of next generation field-effect transistors, logic gates, solar cells and light emitting diodes. Use of Gallium Nitride (GaN) and other wide bandgap materials combines the advantages of III-nitrides along with the enhanced mobility offered by 2-dimensional confinement present in nanowires. The focus of this thesis is on developing a low field mobility model for a GaN nanowire using Ensemble Monte Carlo (EMC) techniques. A 2D Schrödinger-Poisson solver and a one-dimensional Monte Carlo solver is developed for an Aluminum Gallium Nitride/Gallium Nitride Heterostructure nanowire. A GaN/AlN/AlGaN heterostructure device is designed which creates 2-dimensional potential well for electrons. The nanowire is treated as a quasi-1D system in this work. A self-consistent 2D Schrödinger-Poisson solver is designed which determines the subband energies and the corresponding wavefunctions of the confined system. Three scattering mechanisms: acoustic phonon scattering, polar optical phonon scattering and piezoelectric scattering are considered to account for the electron phonon interactions in the system. Overlap integrals and 1D scattering rate expressions are derived for all the mechanisms listed. A generic one-dimensional Monte Carlo solver is also developed. Steady state results from the 1D Monte Carlo solver are extracted to determine the low field mobility of the GaN nanowires.
ContributorsKumar, Viswanathan Naveen (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Created2017