Matching Items (8)
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- All Subjects: CMOS
- Creators: Bakkaloglu, Bertan
Description
Digital to analog converters (DACs) find widespread use in communications equipment. Most commercially available DAC's which are intended to be used in transmitter applications come in a dual configuration for carrying the in phase (I) and quadrature (Q) data and feature on chip digital mixing. Digital mixing offers many benefits concerning I and Q matching but has one major drawback; the update rate of the DAC must be higher than the intermediate frequency (IF) which is most commonly a factor of 4. This drawback motivates the need for interpolation so that a low update rate can be used for components preceding the DACs. In this thesis the design of an interpolating DAC integrated circuit (IC) to be used in a transmitter application for generating a 100MHz IF is presented. Many of the transistor level implementations are provided. The tradeoffs in the design are analyzed and various options are discussed. This thesis provides a basic foundation for designing an IC of this nature and will give the reader insight into potential areas of further research. At the time of this writing the chip is in fabrication therefore this document does not contain test results.
ContributorsNixon, Cliff (Author) / Bakkaloglu, Bertan (Thesis advisor) / Arizona State University (Publisher)
Created2013
Description
High speed current-steering DACs with high linearity are needed in today's applications such as wired and wireless communications, instrumentation, radar, and other direct digital synthesis (DDS) applications. However, a trade-off exists between the speed and resolution of Nyquist rate current-steering DACs. As the resolution increases, more transistor area is required to meet matching requirements for optimal linearity and thus, the overall speed of the DAC is limited.
In this thesis work, a 12-bit current-steering DAC was designed with current sources scaled below the required matching size to decrease the area and increase the overall speed of the DAC. By scaling the current sources, however, errors due to random mismatch between current sources will arise and additional calibration hardware is necessary to ensure 12-bit linearity. This work presents how to implement a self-calibration DAC that works to fix amplitude errors while maintaining a lower overall area. Additionally, the DAC designed in this thesis investigates the implementation feasibility of a data-interleaved architecture. Data interleaving can increase the total bandwidth of the DACs by 2 with an increase in SQNR by an additional 3 dB.
The final results show that the calibration method can effectively improve the linearity of the DAC. The DAC is able to run up to 400 MSPS frequencies with a 75 dB SFDR performance and above 87 dB SFDR performance at update rates of 200 MSPS.
In this thesis work, a 12-bit current-steering DAC was designed with current sources scaled below the required matching size to decrease the area and increase the overall speed of the DAC. By scaling the current sources, however, errors due to random mismatch between current sources will arise and additional calibration hardware is necessary to ensure 12-bit linearity. This work presents how to implement a self-calibration DAC that works to fix amplitude errors while maintaining a lower overall area. Additionally, the DAC designed in this thesis investigates the implementation feasibility of a data-interleaved architecture. Data interleaving can increase the total bandwidth of the DACs by 2 with an increase in SQNR by an additional 3 dB.
The final results show that the calibration method can effectively improve the linearity of the DAC. The DAC is able to run up to 400 MSPS frequencies with a 75 dB SFDR performance and above 87 dB SFDR performance at update rates of 200 MSPS.
ContributorsJankunas, Benjamin (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kitchen, Jennifer (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2014
Description
Semiconductor device scaling has kept up with Moore's law for the past decades and they have been scaling by a factor of half every one and half years. Every new generation of device technology opens up new opportunities and challenges and especially so for analog design. High speed and low gain is characteristic of these processes and hence a tradeoff that can enable to get back gain by trading speed is crucial. This thesis proposes a solution that increases the speed of sampling of a circuit by a factor of three while reducing the specifications on analog blocks and keeping the power nearly constant. The techniques are based on the switched capacitor technique called Correlated Level Shifting. A triple channel Cyclic ADC has been implemented, with each channel working at a sampling frequency of 3.33MS/s and a resolution of 14 bits. The specifications are compared with that based on a traditional architecture to show the superiority of the proposed technique.
ContributorsSivakumar, Balasubramanian (Author) / Farahani, Bahar Jalali (Thesis advisor) / Garrity, Douglas (Committee member) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2012
Description
There is an ever-increasing demand for higher bandwidth and data rate ensuing from exploding number of radio frequency integrated systems and devices. As stated in the Shannon-Hartley theorem, the maximum achievable data rate of a communication channel is linearly proportional to the system bandwidth. This is the main driving force behind pushing wireless systems towards millimeter-wave frequency range, where larger bandwidth is available at a higher carrier frequency. Observing the Moor’s law, highly scaled complementary metal–oxide–semiconductor (CMOS) technologies provide fast transistors with a high unity power gain frequency which enables operating at millimeter-wave frequency range. CMOS is the compelling choice for digital and signal processing modules which concurrently offers high computation speed, low power consumption, and mass integration at a high manufacturing yield. One of the main shortcomings of the sub-micron CMOS technologies is the low breakdown voltage of the transistors that limits the dynamic range of the radio frequency (RF) power blocks, especially with the power amplifiers. Low voltage swing restricts the achievable output power which translates into low signal to noise ratio and degraded linearity. Extensive research has been done on proposing new design and IC fabrication techniques with the goal of generating higher output power in CMOS technology. The prominent drawbacks of these solutions are an increased die area, higher cost per design, and lower overall efficiency due to lossy passive components. In this dissertation, CMOS compatible metal–semiconductor field-effect transistor (MESFETs) are utilized to put forward a new solution to enhance the power amplifier’s breakdown voltage, gain and maximum output power. Requiring no change to the conventional CMOS process flow, this low cost approach allows direct incorporation of high voltage power MESFETs into silicon. High voltage MESFETs were employed in a cascode structure to push the amplifier’s cutoff frequency and unity power gain frequency to the 5G and K-band frequency range. This dissertation begins with CMOS compatible MESFET modeling and fabrication steps, and culminates in the discussion of amplifier design and optimization methodology, parasitic de-embedding steps, simulation and measurement results, and high resistivity RF substrate characterization.
ContributorsHabibiMehr, Payam (Author) / Thornton, Trevor John (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Formicone, Gabriele (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2019
Description
This thesis presents a gas sensor readout IC for amperometric and conductometric electrochemical sensors. The Analog Front-End (AFE) readout circuit enables tracking long term exposure to hazardous gas fumes in diesel and gasoline equipments, which may be correlated to diseases. Thus, the detection and discrimination of gases using microelectronic gas sensor system is required. This thesis describes the research, development, implementation and test of a small and portable based prototype platform for chemical gas sensors to enable a low-power and low noise gas detection system. The AFE reads out the outputs of eight conductometric sensor array and eight amperometric sensor arrays. The IC consists of a low noise potentiostat, and associated 9bit current-steering DAC for sensor stimulus, followed by the first order nested chopped £U£G ADC. The conductometric sensor uses a current driven approach for extracting conductance of the sensor depending on gas concentration. The amperometric sensor uses a potentiostat to apply constant voltage to the sensors and an I/V converter to measure current out of the sensor. The core area for the AFE is 2.65x0.95 mm2. The proposed system achieves 91 dB SNR at 1.32 mW quiescent power consumption per channel. With digital offset storage and nested chopping, the readout chain achieves 500 fÝV input referred offset.
ContributorsKim, Hyun-Tae (Author) / Bakkaloglu, Bertan (Thesis advisor) / Vermeire, Bert (Committee member) / Spanias, Andreas (Committee member) / Thornton, Trevor (Committee member) / Arizona State University (Publisher)
Created2011
Description
ABSTRACT Ongoing research into wireless transceivers in the 60 GHz band is required to address the demand for high data rate communications systems at a frequency where signal propagation is challenging even over short ranges. This thesis proposes a mixer architecture in Complementary Metal Oxide Semiconductor (CMOS) technology that uses a voltage controlled oscillator (VCO) operating at a fractional multiple of the desired output signal. The proposed topology is different from conventional subharmonic mixing in that the oscillator phase generation circuitry usually required for such a circuit is unnecessary. Analysis and simulations are performed on the proposed mixer circuit in an IBM 90 nm RF process on a 1.2 V supply. A typical RF transmitter system is considered in determining the block requirements needed for the mixer to meet the IEEE 802.11ad 60 GHz Draft Physical Layer Specification. The proposed circuit has a conversion loss of 21 dB at 60 GHz with a 5 dBm LO power at 20 GHz. Input-referred third-order intercept point (IIP3) is 2.93 dBm. The gain and linearity of the proposed mixer are sufficient for Orthogonal Frequency Division Multiplexing (OFDM) modulation at 60 GHz with a transmitted data rate of over 4 Gbps.
ContributorsMartino, Todd Jeffrey (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2010
Description
This dissertation focuses on three different efficiency enhancement methods that are applicable to handset applications. These proposed designs are based on three critical requirements for handset application: 1) Small form factor, 2) CMOS compatibility and 3) high power handling. The three presented methodologies are listed below:
1) A transformer-based power combiner architecture for out-phasing transmitters
2) A current steering DAC-based average power tracking circuit for on-chip power amplifiers (PA)
3) A CMOS-based driver stage for GaN-based switched-mode power amplifiers applicable to fully digital transmitters
This thesis highlights the trends in wireless handsets, the motivates the need for fully-integrated CMOS power amplifier solutions and presents the three novel techniques for reconfigurable and digital CMOS-based PAs. Chapter 3, presents the transformer-based power combiner for out-phasing transmitters. The simulation results reveal that this technique is able to shrink the power combiner area, which is one of the largest parts of the transmitter, by about 50% and as a result, enhances the output power density by 3dB.
The average power tracking technique (APT) integrated with an on-chip CMOS-based power amplifier is explained in Chapter 4. This system is able to achieve up to 32dBm saturated output power with a linear power gain of 20dB in a 45nm CMOS SOI process. The maximum efficiency improvement is about ∆η=15% compared to the same PA without APT. Measurement results show that the proposed method is able to amplify an enhanced-EDGE modulated input signal with a data rate of 70.83kb/sec and generate more than 27dBm of average output power with EVM<5%.
Although small form factor, high battery lifetime, and high volume integration motivate the need for fully digital CMOS transmitters, the output power generated by this type of transmitter is not high enough to satisfy the communication standards. As a result, compound materials such as GaN or GaAs are usually being used in handset applications to increase the output power. Chapter 5 focuses on the analysis and design of two CMOS based driver architectures (cascode and house of cards) for driving a GaN power amplifier. The presented results show that the drivers are able to generate ∆Vout=5V, which is required by the compound transistor, and operate up to 2GHz. Since the CMOS driver is expected to drive an off-chip capacitive load, the interface components, such as bond wires, and decoupling and pad capacitors, play a critical role in the output transient response. Therefore, extensive analysis and simulation results have been done on the interface circuits to investigate their effects on RF transmitter performance. The presented results show that the maximum operating frequency when the driver is connected to a 4pF capacitive load is about 2GHz, which is perfectly matched with the reported values in prior literature.
1) A transformer-based power combiner architecture for out-phasing transmitters
2) A current steering DAC-based average power tracking circuit for on-chip power amplifiers (PA)
3) A CMOS-based driver stage for GaN-based switched-mode power amplifiers applicable to fully digital transmitters
This thesis highlights the trends in wireless handsets, the motivates the need for fully-integrated CMOS power amplifier solutions and presents the three novel techniques for reconfigurable and digital CMOS-based PAs. Chapter 3, presents the transformer-based power combiner for out-phasing transmitters. The simulation results reveal that this technique is able to shrink the power combiner area, which is one of the largest parts of the transmitter, by about 50% and as a result, enhances the output power density by 3dB.
The average power tracking technique (APT) integrated with an on-chip CMOS-based power amplifier is explained in Chapter 4. This system is able to achieve up to 32dBm saturated output power with a linear power gain of 20dB in a 45nm CMOS SOI process. The maximum efficiency improvement is about ∆η=15% compared to the same PA without APT. Measurement results show that the proposed method is able to amplify an enhanced-EDGE modulated input signal with a data rate of 70.83kb/sec and generate more than 27dBm of average output power with EVM<5%.
Although small form factor, high battery lifetime, and high volume integration motivate the need for fully digital CMOS transmitters, the output power generated by this type of transmitter is not high enough to satisfy the communication standards. As a result, compound materials such as GaN or GaAs are usually being used in handset applications to increase the output power. Chapter 5 focuses on the analysis and design of two CMOS based driver architectures (cascode and house of cards) for driving a GaN power amplifier. The presented results show that the drivers are able to generate ∆Vout=5V, which is required by the compound transistor, and operate up to 2GHz. Since the CMOS driver is expected to drive an off-chip capacitive load, the interface components, such as bond wires, and decoupling and pad capacitors, play a critical role in the output transient response. Therefore, extensive analysis and simulation results have been done on the interface circuits to investigate their effects on RF transmitter performance. The presented results show that the maximum operating frequency when the driver is connected to a 4pF capacitive load is about 2GHz, which is perfectly matched with the reported values in prior literature.
ContributorsMoallemi, Soroush (Author) / Kitchen, Jennifer (Thesis advisor) / Kiaei, Sayfe (Committee member) / Bakkaloglu, Bertan (Committee member) / Thornton, Trevor (Committee member) / Arizona State University (Publisher)
Created2019
Description
This thesis presents three novel studies. The first two works focus on galvanically isolated chip-to-chip communication, and the third research studies class-E pulse-width modulated power amplifiers. First, a common-mode resilient CMOS (complementary metal-oxide-semiconductor) galvanically isolated Radio Frequency (RF) chip-to-chip communication system is presented utilizing laterally resonant coupled circuits to increases maximum common-mode transient immunity and the isolation capability of galvanic isolators in a low-cost standard CMOS solution beyond the limits provided from the vertical coupling. The design provides the highest reported CMTI (common-mode transient immunity) of more than 600 kV/µs, 5 kVpk isolation, and a chip area of 0.95 mm2. In the second work, a bi-directional ultra-wideband transformer-coupled galvanic isolator is reported for the first time. The proposed design merges the functionality of two isolated channels into one magnetically coupled communication, enabling up to 50% form-factor and assembly cost reduction while achieving a simultaneously robust and state-of-art performance. This work achieves simultaneous robust, wideband, and energy-efficient performance of 300 Mb/s data rate, isolation of 7.8 kVrms, and power consumption and propagation delay of 200 pJ/b and 5 ns, respectively, in only 0.8 mm2 area. The third works studies class-E pulse-width modulated (PWM) Power amplifiers (PAs). For the first time, it presents a design technique to significantly extend the Power back-off (PBO) dynamic range of PWM PAs over the prior art. A proof-of-concept watt-level class-E PA is designed using a GaN HEMT and exhibits more than 6dB dynamic range for a 50 to 30 percent duty cycle variation. Moreover, in this work, the effects of non-idealities on performance and design of class-E power amplifiers for variable supply on and pulse-width operations are characterized and studied, including the effect of non-linear parasitic capacitances and its exploitation for enhancement of average efficiency and self-heating effects in class-E SMPAs using a new over dry-ice measurement technique was presented for this first time. The non-ideality study allows for capturing a full view of the design requirement and considerations of class-E power amplifiers and provides a window to the phenomena that lead to a mismatch between the ideal and actual performance of class-E power amplifiers and their root causes.
ContributorsJavidahmadabadi, Mahdi (Author) / Kitchen, Jennifer N (Thesis advisor) / Aberle, James (Committee member) / Bakkaloglu, Bertan (Committee member) / Burton, Richard (Committee member) / Arizona State University (Publisher)
Created2021