Matching Items (3)
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- All Subjects: Strains and stresses
- Creators: Nofen, Elizabeth
- Creators: Clark, Lawrence
Description
Iodide-based ionic liquids have been widely employed as sources of iodide in electrolytes for applications utilizing the triiodide/iodide redox couple. While adding a low-viscosity solvent such as water to ionic liquids can greatly enhance their usefulness, mixtures of highly viscous iodide-containing ILs with water have never been studied. Thus, this paper investigates, for the first time, mixtures of water and the ionic liquid 1-butyl-3-methylimidazolium iodide ([BMIM][I]) through a combined experimental and molecular dynamics study. The density, melting point, viscosity and conductivity of these mixtures were measured experimentally. The composition region below 50% water by mole was found to be dramatically different from the region above 50% water, with trends in density and melting point differing before and after that point. Water was found to have a profound effect on viscosity and conductivity of the IL, and the effect of hydrogen bonding was discussed. Molecular dynamics simulations representing the same mixture compositions were performed. Molecular ordering was observed, as were changes in this ordering corresponding to water content. Molecular ordering was related to the experimentally measured mixture properties, providing a possible explanation for the two distinct composition regions identified by experiment.
ContributorsNgan, Miranda L (Author) / Dai, Lenore (Thesis director) / Nofen, Elizabeth (Committee member) / Barrett, The Honors College (Contributor) / Chemical Engineering Program (Contributor)
Created2015-05
Description
The problem of catastrophic damage purveys in any material application, and minimizing its occurrence is paramount for general health and safety. Thus, novel damage detection schemes are required that can sense the precursors to damage. Mechanochemistry is the area of research that involves the use of mechanical force to induce a chemical change, with recent study focusing on directing the mechanical force to embedded mechanophore units for a targeted chemical response. Mechanophores are molecular units that provide a measureable signal in response to an applied force, often in the form of a visible color change or fluorescent emission, and their application to thermoset network polymers has been limited. Following preliminary work on polymer blends of cyclobutane-based mechanophores and epoxy, dimeric 9-anthracene carboxylic acid (Di-AC)-based mechanophore particles were synthesized and employed to form stress sensitive particle reinforced epoxy matrix composites.
Under an applied stress, the cyclooctane-rings in the Di-AC particles revert back to their fluorescent anthracene form, which linearly enhances the overall fluorescence of the composite in response to the applied strain. The fluorescent signal further allows for stress sensing in the elastic region of the stress-strain curve, which is considered to be a form of damage precursor detection. This behavior was further analyzed at the molecular scale with corresponding molecular dynamics simulations. Following the successful application of Di-AC to an epoxy matrix, the mechanophore particles were incorporated into a polyurethane matrix to show the universal nature of Di-AC as a stress-sensitive particle filler. Interestingly, in polyurethane Di-AC could successfully detect damage with less applied strain compared to the epoxy system.
While mechanophores of varying chemistries have been covalently incorporated into elastomeric and thermoplastic polymer systems, they have not yet been covalently incorporated a thermoset network polymer. Thus, following the study of mechanophore particles as stress-sensitive fillers, two routes of grafting mechanophore units into an epoxy system to form a self-sensing nanocomposite were explored. These involved the mechanophore precursor and mechanophore, cinnamamide and di-cinnamamide, respectively. With both molecules, the free amine groups can directly bond to epoxy resin to covalently incorporate themselves within the thermoset network to form a self-sensing nanocomposite.
Under an applied stress, the cyclooctane-rings in the Di-AC particles revert back to their fluorescent anthracene form, which linearly enhances the overall fluorescence of the composite in response to the applied strain. The fluorescent signal further allows for stress sensing in the elastic region of the stress-strain curve, which is considered to be a form of damage precursor detection. This behavior was further analyzed at the molecular scale with corresponding molecular dynamics simulations. Following the successful application of Di-AC to an epoxy matrix, the mechanophore particles were incorporated into a polyurethane matrix to show the universal nature of Di-AC as a stress-sensitive particle filler. Interestingly, in polyurethane Di-AC could successfully detect damage with less applied strain compared to the epoxy system.
While mechanophores of varying chemistries have been covalently incorporated into elastomeric and thermoplastic polymer systems, they have not yet been covalently incorporated a thermoset network polymer. Thus, following the study of mechanophore particles as stress-sensitive fillers, two routes of grafting mechanophore units into an epoxy system to form a self-sensing nanocomposite were explored. These involved the mechanophore precursor and mechanophore, cinnamamide and di-cinnamamide, respectively. With both molecules, the free amine groups can directly bond to epoxy resin to covalently incorporate themselves within the thermoset network to form a self-sensing nanocomposite.
ContributorsNofen, Elizabeth (Author) / Dai, Lenore L (Thesis advisor) / Chattopadhyay, Aditi (Thesis advisor) / Emady, Heather (Committee member) / Mu, Bin (Committee member) / Nielsen, David (Committee member) / Arizona State University (Publisher)
Created2016
Description
To extend the lifetime of complementary metal-oxide-semiconductors (CMOS), emerging process techniques are being proposed to conquer the manufacturing difficulties. New structures and materials are proposed with superior electrical properties to traditional CMOS, such as strain technology and feedback field-effect transistor (FB-FET). To continue the design success and make an impact on leading products, advanced circuit design exploration must begin concurrently with early silicon development. Therefore, an accurate and scalable model is desired to correctly capture those effects and flexible to extend to alternative process choices. For example, strain technology has been successfully integrated into CMOS fabrication to improve transistor performance but the stress is non-uniformly distributed in the channel, leading to systematic performance variations. In this dissertation, a new layout-dependent stress model is proposed as a function of layout, temperature, and other device parameters. Furthermore, a method of layout decomposition is developed to partition the layout into a set of simple patterns for model extraction. These solutions significantly reduce the complexity in stress modeling and simulation. On the other hand, semiconductor devices with self-feedback mechanisms are emerging as promising alternatives to CMOS. Fe-FET was proposed to improve the switching by integrating a ferroelectric material as gate insulator in a MOSFET structure. Under particular circumstances, ferroelectric capacitance is effectively negative, due to the negative slope of its polarization-electrical field curve. This property makes the ferroelectric layer a voltage amplifier to boost surface potential, achieving fast transition. A new threshold voltage model for Fe-FET is developed, and is further revealed that the impact of random dopant fluctuation (RDF) can be suppressed. Furthermore, through silicon via (TSV), a key technology that enables the 3D integration of chips, is studied. TSV structure is usually a cylindrical metal-oxide-semiconductors (MOS) capacitor. A piecewise capacitance model is proposed for 3D interconnect simulation. Due to the mismatch in coefficients of thermal expansion (CTE) among materials, thermal stress is observed in TSV process and impacts neighboring devices. The stress impact is investigated to support the interaction between silicon process and IC design at the early stage.
ContributorsWang, Chi-Chao (Author) / Cao, Yu (Thesis advisor) / Chakrabarti, Chaitali (Committee member) / Clark, Lawrence (Committee member) / Schroder, Dieter (Committee member) / Arizona State University (Publisher)
Created2011