Matching Items (5)
Filtering by

Clear all filters

152867-Thumbnail Image.png
Description
There is an ever growing need for larger memories which are reliable and fast. New technologies to implement non-volatile memories which are large, fast, compact and cost-efficient are being studied extensively. One of the most promising technologies being developed is the resistive RAM (ReRAM). In ReRAM the resistance of the

There is an ever growing need for larger memories which are reliable and fast. New technologies to implement non-volatile memories which are large, fast, compact and cost-efficient are being studied extensively. One of the most promising technologies being developed is the resistive RAM (ReRAM). In ReRAM the resistance of the device varies with the voltage applied across it. Programmable metallization cells (PMC) is one of the devices belonging to this category of non-volatile memories.

In order to advance the development of these devices, there is a need to develop simulation models which replicate the behavior of these devices in circuits. In this thesis, a verilogA model for the PMC has been developed. The behavior of the model has been tested using DC and transient simulations. Experimental data obtained from testing PMC devices fabricated at Arizona State University have been compared to results obtained from simulation.

A basic memory cell known as the 1T 1R cell built using the PMC has also been simulated and verified. These memory cells have the potential to be building blocks of large scale memories. I believe that the verilogA model developed in this thesis will prove to be a powerful tool for researchers and circuit developers looking to develop non-volatile memories using alternative technologies.
ContributorsBharadwaj, Vineeth (Author) / Barnaby, Hugh (Thesis advisor) / Kozicki, Michael (Committee member) / Mikkola, Esko (Committee member) / Arizona State University (Publisher)
Created2014
152978-Thumbnail Image.png
Description
Nonvolatile memory (NVM) technologies have been an integral part of electronic systems for the past 30 years. The ideal non-volatile memory have minimal physical size, energy usage, and cost while having maximal speed, capacity, retention time, and radiation hardness. A promising candidate for next-generation memory is ion-conducting bridging RAM which

Nonvolatile memory (NVM) technologies have been an integral part of electronic systems for the past 30 years. The ideal non-volatile memory have minimal physical size, energy usage, and cost while having maximal speed, capacity, retention time, and radiation hardness. A promising candidate for next-generation memory is ion-conducting bridging RAM which is referred to as programmable metallization cell (PMC), conductive bridge RAM (CBRAM), or electrochemical metallization memory (ECM), which is likely to surpass flash memory in all the ideal memory characteristics. A comprehensive physics-based model is needed to completely understand PMC operation and assist in design optimization.

To advance the PMC modeling effort, this thesis presents a precise physical model parameterizing materials associated with both ion-rich and ion-poor layers of the PMC's solid electrolyte, so that captures the static electrical behavior of the PMC in both its low-resistance on-state (LRS) and high resistance off-state (HRS). The experimental data is measured from a chalcogenide glass PMC designed and manufactured at ASU. The static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film is characterized and modeled using three dimensional simulation code written in Silvaco Atlas finite element analysis software. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.

The sensitivity of our modeled PMC to the variation of its prominent achieved material parameters is examined on the HRS and LRS impedance behavior.

The obtained accurate set of material parameters for both Ag-rich and Ag-poor ChG systems and process variation verification on electrical characteristics enables greater fidelity in PMC device simulation, which significantly enhances our ability to understand the underlying physics of ChG-based resistive switching memory.
ContributorsRajabi, Saba (Author) / Barnaby, Hugh (Thesis advisor) / Kozicki, Michael (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2014
135382-Thumbnail Image.png
Description
In competitive Taekwondo, Electronic Body Protectors (EBPs) are used to register hits made by players during sparring. EBPs are comprised of three main components: chest guard, foot sock, and headgear. This equipment interacts with each other through the use of magnets, electric sensors, transmitters, and a receiver. The receiver is

In competitive Taekwondo, Electronic Body Protectors (EBPs) are used to register hits made by players during sparring. EBPs are comprised of three main components: chest guard, foot sock, and headgear. This equipment interacts with each other through the use of magnets, electric sensors, transmitters, and a receiver. The receiver is connected to a computer programmed with software to process signals from the transmitter and determine whether or not a competitor scored a point. The current design of EBPs, however, have numerous shortcomings, including sensing false positives, failing to register hits, costing too much, and relying on human judgment. This thesis will thoroughly delineate the operation of the current EBPs used and discuss research performed in order to eliminate these weaknesses.
ContributorsSpell, Valerie Anne (Author) / Kozicki, Michael (Thesis director) / Kitchen, Jennifer (Committee member) / Electrical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2016-05
153606-Thumbnail Image.png
Description
Non-volatile memory (NVM) has become a staple in the everyday life of consumers. NVM manifests inside cell phones, laptops, and most recently, wearable tech such as smart watches. NAND Flash has been an excellent solution to conditions requiring fast, compact NVM. Current technology nodes are nearing the physical limits of

Non-volatile memory (NVM) has become a staple in the everyday life of consumers. NVM manifests inside cell phones, laptops, and most recently, wearable tech such as smart watches. NAND Flash has been an excellent solution to conditions requiring fast, compact NVM. Current technology nodes are nearing the physical limits of scaling, preventing flash from improving. To combat the limitations of flash and to appease consumer demand for progressively faster and denser NVM, new technologies are needed. One possible candidate for the replacement of NAND Flash is programmable metallization cells (PMC). PMC are a type of resistive memory, meaning that they do not rely on charge storage to maintain a logic state. Depending on their application, it is possible that devices containing NVM will be exposed to harsh radiation environments. As part of the process for developing a novel memory technology, it is important to characterize the effects irradiation has on the functionality of the devices.

This thesis characterizes the effects that ionizing γ-ray irradiation has on the retention of the programmed resistive state of a PMC. The PMC devices tested used Ge30Se70 doped with Ag as the solid electrolyte layer and were fabricated by the thesis author in a Class 100 clean room. Individual device tiles were wire bonded into ceramic packages and tested in a biased and floating contact scenario.

The first scenario presented shows that PMC devices are capable of retaining their programmed state up to the maximum exposed total ionizing dose (TID) of 3.1 Mrad(Si). In this first scenario, the contacts of the PMC devices were left floating during exposure. The second scenario tested shows that the PMC devices are capable of retaining their state until the maximum TID of 10.1 Mrad(Si) was reached. The contacts in the second scenario were biased, with a 50 mV read voltage applied to the anode contact. Analysis of the results show that Ge30Se70 PMC are ionizing radiation tolerant and can retain a programmed state to a higher TID than NAND Flash memory.
ContributorsTaggart, Jennifer Lynn (Author) / Barnaby, Hugh (Thesis advisor) / Kozicki, Michael (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2015
154501-Thumbnail Image.png
Description
As persistent non-volatile memory solutions become integrated in the computing ecosystem and landscape, traditional commodity file systems architected and developed for traditional block I/O based memory solutions must be reevaluated. A majority of commodity file systems have been architected and designed with the goal of managing data on non-volatile

As persistent non-volatile memory solutions become integrated in the computing ecosystem and landscape, traditional commodity file systems architected and developed for traditional block I/O based memory solutions must be reevaluated. A majority of commodity file systems have been architected and designed with the goal of managing data on non-volatile storage devices such as hard disk drives (HDDs) and solid state drives (SSDs). HDDs and SSDs are attached to a computing system via a controller or I/O hub, often referred to as the southbridge. The point of HDD and SSD attachment creates multiple levels of translation for any data managed by the CPU that must be stored in non-volatile memory (NVM) on an HDD or SSD. Storage Class Memory (SCM) devices provide the ability to store data at the CPU and DRAM level of a computing system. A novel set of modifications to the ext2 and ext4 commodity file systems to address the needs of SCM will be presented and discussed. An in-depth analysis of many existing file systems, from multiple sources, will be presented along with an analysis to identify key modifications and extensions that would be necessary to execute file system on SCM devices. From this analysis, modifications and extensions have been applied to the FAT commodity file system for key functional tests that will be presented to demonstrate the operation and execution of the file system extensions.
ContributorsRobles, Raymond (Author) / Syrotiuk, Violet (Thesis advisor) / Sohoni, Sohum (Committee member) / Wu, Carole-Jean (Committee member) / Arizona State University (Publisher)
Created2016