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- Genre: Doctoral Dissertation
Description
This dissertation focuses on three different efficiency enhancement methods that are applicable to handset applications. These proposed designs are based on three critical requirements for handset application: 1) Small form factor, 2) CMOS compatibility and 3) high power handling. The three presented methodologies are listed below:
1) A transformer-based power combiner architecture for out-phasing transmitters
2) A current steering DAC-based average power tracking circuit for on-chip power amplifiers (PA)
3) A CMOS-based driver stage for GaN-based switched-mode power amplifiers applicable to fully digital transmitters
This thesis highlights the trends in wireless handsets, the motivates the need for fully-integrated CMOS power amplifier solutions and presents the three novel techniques for reconfigurable and digital CMOS-based PAs. Chapter 3, presents the transformer-based power combiner for out-phasing transmitters. The simulation results reveal that this technique is able to shrink the power combiner area, which is one of the largest parts of the transmitter, by about 50% and as a result, enhances the output power density by 3dB.
The average power tracking technique (APT) integrated with an on-chip CMOS-based power amplifier is explained in Chapter 4. This system is able to achieve up to 32dBm saturated output power with a linear power gain of 20dB in a 45nm CMOS SOI process. The maximum efficiency improvement is about ∆η=15% compared to the same PA without APT. Measurement results show that the proposed method is able to amplify an enhanced-EDGE modulated input signal with a data rate of 70.83kb/sec and generate more than 27dBm of average output power with EVM<5%.
Although small form factor, high battery lifetime, and high volume integration motivate the need for fully digital CMOS transmitters, the output power generated by this type of transmitter is not high enough to satisfy the communication standards. As a result, compound materials such as GaN or GaAs are usually being used in handset applications to increase the output power. Chapter 5 focuses on the analysis and design of two CMOS based driver architectures (cascode and house of cards) for driving a GaN power amplifier. The presented results show that the drivers are able to generate ∆Vout=5V, which is required by the compound transistor, and operate up to 2GHz. Since the CMOS driver is expected to drive an off-chip capacitive load, the interface components, such as bond wires, and decoupling and pad capacitors, play a critical role in the output transient response. Therefore, extensive analysis and simulation results have been done on the interface circuits to investigate their effects on RF transmitter performance. The presented results show that the maximum operating frequency when the driver is connected to a 4pF capacitive load is about 2GHz, which is perfectly matched with the reported values in prior literature.
1) A transformer-based power combiner architecture for out-phasing transmitters
2) A current steering DAC-based average power tracking circuit for on-chip power amplifiers (PA)
3) A CMOS-based driver stage for GaN-based switched-mode power amplifiers applicable to fully digital transmitters
This thesis highlights the trends in wireless handsets, the motivates the need for fully-integrated CMOS power amplifier solutions and presents the three novel techniques for reconfigurable and digital CMOS-based PAs. Chapter 3, presents the transformer-based power combiner for out-phasing transmitters. The simulation results reveal that this technique is able to shrink the power combiner area, which is one of the largest parts of the transmitter, by about 50% and as a result, enhances the output power density by 3dB.
The average power tracking technique (APT) integrated with an on-chip CMOS-based power amplifier is explained in Chapter 4. This system is able to achieve up to 32dBm saturated output power with a linear power gain of 20dB in a 45nm CMOS SOI process. The maximum efficiency improvement is about ∆η=15% compared to the same PA without APT. Measurement results show that the proposed method is able to amplify an enhanced-EDGE modulated input signal with a data rate of 70.83kb/sec and generate more than 27dBm of average output power with EVM<5%.
Although small form factor, high battery lifetime, and high volume integration motivate the need for fully digital CMOS transmitters, the output power generated by this type of transmitter is not high enough to satisfy the communication standards. As a result, compound materials such as GaN or GaAs are usually being used in handset applications to increase the output power. Chapter 5 focuses on the analysis and design of two CMOS based driver architectures (cascode and house of cards) for driving a GaN power amplifier. The presented results show that the drivers are able to generate ∆Vout=5V, which is required by the compound transistor, and operate up to 2GHz. Since the CMOS driver is expected to drive an off-chip capacitive load, the interface components, such as bond wires, and decoupling and pad capacitors, play a critical role in the output transient response. Therefore, extensive analysis and simulation results have been done on the interface circuits to investigate their effects on RF transmitter performance. The presented results show that the maximum operating frequency when the driver is connected to a 4pF capacitive load is about 2GHz, which is perfectly matched with the reported values in prior literature.
ContributorsMoallemi, Soroush (Author) / Kitchen, Jennifer (Thesis advisor) / Kiaei, Sayfe (Committee member) / Bakkaloglu, Bertan (Committee member) / Thornton, Trevor (Committee member) / Arizona State University (Publisher)
Created2019
Description
Niobium is the primary material for fabricating superconducting radio-frequency (SRF) cavities. However, presence of impurities and defects degrade the superconducting behavior of niobium twofold, first by nucleating non-superconducting phases and second by increasing the residual surface resistance of cavities. In particular, niobium absorbs hydrogen during cavity fabrication and promotes precipitation of non-superconducting niobium hydride phases. Additionally, magnetic flux trapping at defects leads to a normal conducting (non-superconducting) core which increases surface resistance and negatively affects niobium performance for superconducting applications. However, undelaying mechanisms related to hydride formation and dissolution along with defect interaction with magnetic fields is still unclear. Therefore, this dissertation aims to investigate the role of defects and impurities on functional properties of niobium for SRF cavities using first-principles methods.
Here, density functional theory calculations revealed that nitrogen addition suppressed hydrogen absorption interstitially and at grain boundaries, and it also decreased the energetic stability of niobium hydride precipitates present in niobium. Further, hydrogen segregation at the screw dislocation was observed to transform the dislocation core structure and increase the barrier for screw dislocation motion. Valence charge transfer calculations displayed a strong tendency of nitrogen to accumulate charge around itself, thereby decreasing the strength of covalent bonds between niobium and hydrogen leading to a very unstable state for interstitial hydrogen and hydrides. Thus, presence of nitrogen during processing plays a critical role in controlling hydride precipitation and subsequent SRF properties.
First-principles methods were further implemented to gain a theoretical perspective about the experimental observations that lattice defects are effective at trapping magnetic flux in high-purity superconducting niobium. Full-potential linear augmented plane-wave methods were used to analyze the effects of magnetic field on the superconducting state surrounding these defects. A considerable amount of trapped flux was obtained at the dislocation core and grain boundaries which can be attributed to significantly different electronic structure of defects as compared to bulk niobium. Electron redistribution at defects enhances non-paramagnetic effects that perturb superconductivity, resulting in local conditions suitable for flux trapping. Therefore, controlling accumulation or depletion of charge at the defects could mitigate these tendencies and aid in improving superconductive behavior of niobium.
Here, density functional theory calculations revealed that nitrogen addition suppressed hydrogen absorption interstitially and at grain boundaries, and it also decreased the energetic stability of niobium hydride precipitates present in niobium. Further, hydrogen segregation at the screw dislocation was observed to transform the dislocation core structure and increase the barrier for screw dislocation motion. Valence charge transfer calculations displayed a strong tendency of nitrogen to accumulate charge around itself, thereby decreasing the strength of covalent bonds between niobium and hydrogen leading to a very unstable state for interstitial hydrogen and hydrides. Thus, presence of nitrogen during processing plays a critical role in controlling hydride precipitation and subsequent SRF properties.
First-principles methods were further implemented to gain a theoretical perspective about the experimental observations that lattice defects are effective at trapping magnetic flux in high-purity superconducting niobium. Full-potential linear augmented plane-wave methods were used to analyze the effects of magnetic field on the superconducting state surrounding these defects. A considerable amount of trapped flux was obtained at the dislocation core and grain boundaries which can be attributed to significantly different electronic structure of defects as compared to bulk niobium. Electron redistribution at defects enhances non-paramagnetic effects that perturb superconductivity, resulting in local conditions suitable for flux trapping. Therefore, controlling accumulation or depletion of charge at the defects could mitigate these tendencies and aid in improving superconductive behavior of niobium.
ContributorsGarg, Pulkit (Author) / Solanki, Kiran N (Thesis advisor) / Jiao, Yang (Committee member) / Oswald, Jay (Committee member) / Arizona State University (Publisher)
Created2019
Description
In 1946 Felix Bloch first demonstrated the phenomenon of nuclear magnetic resonance using continuous-wave signal generation and acquisition. Shortly after in 1966, Richard R. Ernst demonstrated the breakthrough that nuclear magnetic resonance needed to develop into magnetic resonance imaging: the application of Fourier transforms for sensitive pulsed imaging. Upon this discovery, the world of research began to develop high power radio amplifiers and fast radio switches for pulsed experimentation. Consequently, continuous-wave imaging placed on the backburner.Although high power pulses are dominant in clinical imaging, there are unique advantages to low power, continuous-wave pulse sequences that transmit and receive signals simultaneously. Primarily, tissues or materials with short T2 time constants can be imaged and the peak radio power required is drastically reduced.
The fundamental problem with this lies in its nature; the transmitter leaks a strong leakage signal into the receiver, thus saturating the receiver and the intended nuclear magnetic resonance signal is lost noise.
Demonstrated in this dissertation is a multichannel standalone simultaneous transmit and receive (STAR) system with remote user-control that enables continuous- wave full-duplex imaging. STAR calibrates cancellation signals through vector modulators that match the leakage signal of each receiver in amplitude but opposite in phase, therefore destructively interfering the leakage signals. STAR does not require specific imaging coils or console inputs for calibration. It was designed to be general- purpose, therefore integrating into any imaging system. To begin, the user uses an Android tablet to tune STAR to match the Larmor frequency in the bore. Then, the user tells STAR to begin calibration. After self-calibrating, the user may fine-tune the calibration state of the system before enabling a low-power mode for system electronics and imaging may commence. STAR was demonstrated to isolate two receiver coils upwards of 70 dB from the transmit coil and is readily upgradable to enable the use of four receive coils.
Some primary concerns of STAR are the removal of transceivers for multichannel operation, digital circuit noise, external noise, calibration speed, upgradability, and the isolation introduced; all of which are addressed in the proceeding thesis.
ContributorsColwell, Zachary Allen (Author) / Sohn, Sung-Min (Thesis advisor) / Trichopoulos, Georgios (Thesis advisor) / Aberle, James (Committee member) / Sadleir, Rosalind (Committee member) / Arizona State University (Publisher)
Created2023