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- Creators: Chan, Candace
Description
Lithium-ion batteries are one of the most widely used energy storage solutions today. As renewable energy sources proliferate to meet growth in worldwide energy consumption, it is important that lithium-ion batteries be improved to help capture this energy for use when the demand arises. One way to boost the performance of lithium-ion batteries is to replace the electrode active materials with materials of higher specific capacity. Silicon is one material that has been widely touted as a potential replacement for the graphite used in commercial anodes with a theoretical capacity of 3500 mAh/g as opposed to graphite's 372 mAh/g. However, bulk silicon is known to pulverize after experiencing large strains during lithiation. Here, silicon clathrates are investigated as a potential structure for accommodation of these strains. Silicon clathrates consist of covalently bonded silicon host cages surrounding a guest alkali or alkaline earth metal ion. Previous work has looked at silicon clathrates for their superconducting and thermoelectric properties. In this study, electrochemical properties of type I and II silicon clathrates with sodium guest ions (NaxSi46 and NaxSi136) and type I silicon clathrates with copper framework substitution and barium guest ions (Ba8CuxSi46-x) are examined. Sodium clathrates showed very high capacities during initial lithiation (>2500 mAh/g), but rapidly lost capacity thereafter. X-ray diffraction after lithiation showed conversion of the clathrate phase to lithium silicide and then to amorphous silicon after delithiation, indicating destruction of the clathrate structure as a possible explanation for the rapid capacity fade. Ba8CuxSi46-x clathrates were found to have their structures completely intact after 50 cycles. However, they had very low reversible capacities (<100 mAh/g) and potentially might not be electrochemically active. Further work is needed to better understand exactly how lithium is inserted into clathrates and if copper impurities detected during wavelength-dispersive X-ray spectroscopy could be inhibiting lithium transport into the clathrates.
ContributorsWagner, Nicholas Adam (Author) / Chan, Candace (Thesis director) / Sieradzki, Karl (Committee member) / Barrett, The Honors College (Contributor) / Materials Science and Engineering Program (Contributor)
Created2014-05
Description
The metallization and interconnection of Si photovoltaic (PV) devices are among some of the most critically important aspects to ensure the PV cells and modules are cost-effective, highly-efficient, and robust through environmental stresses. The aim of this work is to contribute to the development of these innovations to move them closer to commercialization.Shingled PV modules and laser-welded foil-interconnected modules present an alternative to traditional soldered ribbons that can improve module power densities in a cost-effective manner. These two interconnection methods present new technical challenges for the PV industry. This work presents x-ray imaging methods to aid in the process-optimization of the application and curing of the adhesive material used in shingled modules. Further, detailed characterization of laser welds, their adhesion, and their effect on module performances is conducted. A strong correlation is found between the laser-weld adhesion and the modules’ durability through thermocycling. A minimum laser weld adhesion of 0.8 mJ is recommended to ensure a robust interconnection is formed.
Detailed characterization and modelling are demonstrated on a 21% efficient double-sided tunnel-oxide passivating contact (DS-TOPCon) cell. This technology uses a novel approach that uses the front-metal grid to etch-away the parasitically-absorbing poly-Si material everywhere except for underneath the grid fingers. The modelling yielded a match to the experimental device within 0.06% absolute of its efficiency. This DS-TOPCon device could be improved to a 23.45%-efficient device by improving the optical performance, n-type contact resistivity, and grid finger aspect ratio.
Finally, a modelling approach is explored for simulating Si thermophotovoltaic (TPV) devices. Experimentally fabricated diffused-junction devices are used to validate the optical and electrical aspects of the model. A peak TPV efficiency of 6.8% is predicted for the fabricated devices, but a pathway to 32.5% is explained by reducing the parasitic absorption of the contacts and reducing the wafer thickness. Additionally, the DS-TOPCon technology shows the potential for a 33.7% efficient TPV device.
ContributorsHartweg, Barry (Author) / Holman, Zachary (Thesis advisor) / Chan, Candace (Committee member) / Bertoni, Mariana (Committee member) / Yu, Zhengshan (Committee member) / Arizona State University (Publisher)
Created2023