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- All Subjects: Microelectromechanical Systems
- All Subjects: LDMOS
- Creators: Aberle, James T
- Resource Type: Text
Description
ABSTRACT This work seeks to develop a practical solution for short range ultrasonic communications and produce an integrated array of acoustic transmitters on a flexible substrate. This is done using flexible thin film transistor (TFT) and micro electromechanical systems (MEMS). The goal is to develop a flexible system capable of communicating in the ultrasonic frequency range at a distance of 10 - 100 meters. This requires a great deal of innovation on the part of the FDC team developing the TFT driving circuitry and the MEMS team adapting the technology for fabrication on a flexible substrate. The technologies required for this research are independently developed. The TFT development is driven primarily by research into flexible displays. The MEMS development is driving by research in biosensors and micro actuators. This project involves the integration of TFT flexible circuit capabilities with MEMS micro actuators in the novel area of flexible acoustic transmitter arrays. This thesis focuses on the design, testing and analysis of the circuit components required for this project.
ContributorsDaugherty, Robin (Author) / Allee, David R. (Thesis advisor) / Chae, Junseok (Thesis advisor) / Aberle, James T (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2012
Description
This thesis is a study of Bandwidth limitation of basestation power amplifier and its Doherty application. Fundamentally, bandwidth of a power amplifier (PA) is limited by both its input and output prematch networks and its Doherty architecture, specifically the impedance inverter between the main and auxiliary amplifier. In this study, only the output prematch network and the Doherty architecture follows are being investigated. A new proposed impedance inverter in the Doherty architecture exhibits an extended bandwidth compared to traditional quarterwave line.
Base on the loadline analysis, output impedance of the power amplifier can be represented by a loadline resistor and an output shunt capacitor. Base on this simple model, the maximum allowed bandwidth of the output impedance of the power amplifier can be estimated using the Bode-Fano method. However, since power amplifier is in fact nonlinear, harmonic balance simulation is used to loadpull the device across a broad range of frequencies. Base on the simulated large signal impedance at maximum power, the prematch circuitry can be designed. On a system level, the prematch power amplifier is used in Doherty amplifier. Two different prematch circuitries, T- section and shunt L methods are investigated along with their comparison in the Doherty architecture at both back off power and peak power condition. The last section of the thesis will be incorporating the proposed impedance inverter structure between the main and auxiliary amplifiers.
The simulated results showed the shunt L prematch topology has the least impedance dispersion across frequency. Along with the new impedance inverter structure, the 65% efficiency bandwidth improves by 50% compared to the original impedance inverter structure at back off power level.
Base on the loadline analysis, output impedance of the power amplifier can be represented by a loadline resistor and an output shunt capacitor. Base on this simple model, the maximum allowed bandwidth of the output impedance of the power amplifier can be estimated using the Bode-Fano method. However, since power amplifier is in fact nonlinear, harmonic balance simulation is used to loadpull the device across a broad range of frequencies. Base on the simulated large signal impedance at maximum power, the prematch circuitry can be designed. On a system level, the prematch power amplifier is used in Doherty amplifier. Two different prematch circuitries, T- section and shunt L methods are investigated along with their comparison in the Doherty architecture at both back off power and peak power condition. The last section of the thesis will be incorporating the proposed impedance inverter structure between the main and auxiliary amplifiers.
The simulated results showed the shunt L prematch topology has the least impedance dispersion across frequency. Along with the new impedance inverter structure, the 65% efficiency bandwidth improves by 50% compared to the original impedance inverter structure at back off power level.
ContributorsYang, Nick (Author) / Pan, George (Committee member) / Aberle, James T (Committee member) / Yu, Hongyu (Committee member) / Arizona State University (Publisher)
Created2014
Description
Graphene is a very strong two-dimensional material with a lot of potential applications in microelectromechanical systems (MEMS). In this research, graphene is being optimized for use in a 5 m x 5 m graphene resonator. To work properly, this graphene resonator must have a uniform strain across all manufactured devices. To reduce strain induced in graphene sheets grown for use in these resonators, evaporated platinum has been used in this investigation due to its relatively lower surface roughness compared to copper films. The final goal is to have the layer of ultrathin platinum (<=200 nm) deposited on the MEMS graphene resonator and used to grow graphene directly onto the devices to remove the manual transfer step due to its inscalability. After growth, graphene is coated with polymer and the platinum is then etched. This investigation concentrated on the transfer process of graphene onto Si/SiO2 substrate from the platinum films. It was determined that the ideal platinum etchant was aqua regia at a volumetric ratio of 6:3:1 (H2O:HCl:HNO3). This concentration was dilute enough to preserve the polymer and graphene layer, but strong enough to etch within a day. Type and thickness of polymer support layers were also investigated. PMMA at a thickness of 200 nm was ideal because it was easy to remove with acetone and strong enough to support the graphene during the etch process. A reference growth recipe was used in this investigation, but now that the transfer has been demonstrated, growth can be optimized for even thinner films.
ContributorsCayll, David Richard (Author) / Tongay, Sefaattin (Thesis director) / Lee, Hyunglae (Committee member) / Mechanical and Aerospace Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2016-12