Matching Items (4)
Filtering by
- All Subjects: Silicon Solar Cells
- Creators: Schroder, Dieter
- Creators: Bliss, Lyle Brewster
Description
As crystalline silicon solar cells continue to get thinner, the recombination of carriers at the surfaces of the cell plays an ever-important role in controlling the cell efficiency. One tool to minimize surface recombination is field effect passivation from the charges present in the thin films applied on the cell surfaces. The focus of this work is to understand the properties of charges present in the SiNx films and then to develop a mechanism to manipulate the polarity of charges to either negative or positive based on the end-application. Specific silicon-nitrogen dangling bonds (·Si-N), known as K center defects, are the primary charge trapping defects present in the SiNx films. A custom built corona charging tool was used to externally inject positive or negative charges in the SiNx film. Detailed Capacitance-Voltage (C-V) measurements taken on corona charged SiNx samples confirmed the presence of a net positive or negative charge density, as high as +/- 8 x 1012 cm-2, present in the SiNx film. High-energy (~ 4.9 eV) UV radiation was used to control and neutralize the charges in the SiNx films. Electron-Spin-Resonance (ESR) technique was used to detect and quantify the density of neutral K0 defects that are paramagnetically active. The density of the neutral K0 defects increased after UV treatment and decreased after high temperature annealing and charging treatments. Etch-back C-V measurements on SiNx films showed that the K centers are spread throughout the bulk of the SiNx film and not just near the SiNx-Si interface. It was also shown that the negative injected charges in the SiNx film were stable and present even after 1 year under indoor room-temperature conditions. Lastly, a stack of SiO2/SiNx dielectric layers applicable to standard commercial solar cells was developed using a low temperature (< 400 °C) PECVD process. Excellent surface passivation on FZ and CZ Si substrates for both n- and p-type samples was achieved by manipulating and controlling the charge in SiNx films.
ContributorsSharma, Vivek (Author) / Bowden, Stuart (Thesis advisor) / Schroder, Dieter (Committee member) / Honsberg, Christiana (Committee member) / Roedel, Ronald (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2013
Description
This dissertation addresses challenges pertaining to multi-junction (MJ) solar cells from material development to device design and characterization. Firstly, among the various methods to improve the energy conversion efficiency of MJ solar cells using, a novel approach proposed recently is to use II-VI (MgZnCd)(SeTe) and III-V (AlGaIn)(AsSb) semiconductors lattice-matched on GaSb or InAs substrates for current-matched subcells with minimal defect densities. CdSe/CdTe superlattices are proposed as a potential candidate for a subcell in the MJ solar cell designs using this material system, and therefore the material properties of the superlattices are studied. The high structural qualities of the superlattices are obtained from high resolution X-ray diffraction measurements and cross-sectional transmission electron microscopy images. The effective bandgap energies of the superlattices obtained from the photoluminescence (PL) measurements vary with the layer thicknesses, and are smaller than the bandgap energies of either the constituent material. Furthermore, The PL peak position measured at the steady state exhibits a blue shift that increases with the excess carrier concentration. These results confirm a strong type-II band edge alignment between CdSe and CdTe. The valence band offset between unstrained CdSe and CdTe is determined as 0.63 eV±0.06 eV by fitting the measured PL peak positions using the Kronig-Penney model. The blue shift in PL peak position is found to be primarily caused by the band bending effect based on self-consistent solutions of the Schrödinger and Poisson equations. Secondly, the design of the contact grid layout is studied to maximize the power output and energy conversion efficiency for concentrator solar cells. Because the conventional minimum power loss method used for the contact design is not accurate in determining the series resistance loss, a method of using a distributed series resistance model to maximize the power output is proposed for the contact design. It is found that the junction recombination loss in addition to the series resistance loss and shadowing loss can significantly affect the contact layout. The optimal finger spacing and maximum efficiency calculated by the two methods are close, and the differences are dependent on the series resistance and saturation currents of solar cells. Lastly, the accurate measurements of external quantum efficiency (EQE) are important for the design and development of MJ solar cells. However, the electrical and optical couplings between the subcells have caused EQE measurement artifacts. In order to interpret the measurement artifacts, DC and small signal models are built for the bias condition and the scan of chopped monochromatic light in the EQE measurements. Characterization methods are developed for the device parameters used in the models. The EQE measurement artifacts are found to be caused by the shunt and luminescence coupling effects, and can be minimized using proper voltage and light biases. Novel measurement methods using a pulse voltage bias or a pulse light bias are invented to eliminate the EQE measurement artifacts. These measurement methods are nondestructive and easy to implement. The pulse voltage bias or pulse light bias is superimposed on the conventional DC voltage and light biases, in order to control the operating points of the subcells and counterbalance the effects of shunt and luminescence coupling. The methods are demonstrated for the first time to effectively eliminate the measurement artifacts.
ContributorsLi, Jingjing (Author) / Zhang, Yong-Hang (Thesis advisor) / Tao, Meng (Committee member) / Schroder, Dieter (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2012
Description
As global population and demand for electrical power increase, humanity is faced with the growing challenge of harnessing and distributing enough energy to sustain the developing world. Currently, fossil fuels (coal
atural gas) are our main sources of electricity. However, their cost is increasing, they are nonrenewable, and they are very harmful to the environment. Thus, capacity expansion in the renewable energy sector must be realized to offset higher energy demand and reduce dependence on fossil fuels. Solar energy represents a practical solution, as installed global solar capacity has been increasing exponentially over the past 2 decades. However, even with government incentives, solar energy price ($/kWh) continues to be highly dependent on political climate and raw material (silicon and silver) cost. To realistically and cost effectively meet the projected expansions within the solar industry, silver must be replaced with less costly and more abundant metals (such as copper) in the front-grid metallization process of photovoltaic cells. Copper, while offering both higher achievable efficiencies and a raw material cost nearly 100 times cheaper than silver, has inherent disadvantages. Specifically, copper diffuses rapidly into the silicon substrate, requires more complex and error-prone processing steps, and tends to have less adhesive strength, reducing panel robustness. In this study, nickel deposition via sputtering was analyzed, as well as overall potential of nickel as a seed layer for copper plating, which also provides a barrier layer to copper diffusion in silicon. Thermally-formed nickel silicide also reduces contact resistivity, increasing cell efficiency. It was found that at 400 \u00B0C, ideal nickel silicide formation occurred. By computer modeling, contact resistivity was found to have a significant impact on cell efficiency (up to 1.8%). Finally, sputtering proved useful to analyze nickel silicide formation, but costs and time requirements prevent it from being a practical industrial-scale metallization method.
atural gas) are our main sources of electricity. However, their cost is increasing, they are nonrenewable, and they are very harmful to the environment. Thus, capacity expansion in the renewable energy sector must be realized to offset higher energy demand and reduce dependence on fossil fuels. Solar energy represents a practical solution, as installed global solar capacity has been increasing exponentially over the past 2 decades. However, even with government incentives, solar energy price ($/kWh) continues to be highly dependent on political climate and raw material (silicon and silver) cost. To realistically and cost effectively meet the projected expansions within the solar industry, silver must be replaced with less costly and more abundant metals (such as copper) in the front-grid metallization process of photovoltaic cells. Copper, while offering both higher achievable efficiencies and a raw material cost nearly 100 times cheaper than silver, has inherent disadvantages. Specifically, copper diffuses rapidly into the silicon substrate, requires more complex and error-prone processing steps, and tends to have less adhesive strength, reducing panel robustness. In this study, nickel deposition via sputtering was analyzed, as well as overall potential of nickel as a seed layer for copper plating, which also provides a barrier layer to copper diffusion in silicon. Thermally-formed nickel silicide also reduces contact resistivity, increasing cell efficiency. It was found that at 400 \u00B0C, ideal nickel silicide formation occurred. By computer modeling, contact resistivity was found to have a significant impact on cell efficiency (up to 1.8%). Finally, sputtering proved useful to analyze nickel silicide formation, but costs and time requirements prevent it from being a practical industrial-scale metallization method.
ContributorsBliss, Lyle Brewster (Author) / Bowden, Stuart (Thesis director) / Karas, Joseph (Committee member) / Chemical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2017-05
Description
Potential-Induced Degradation (PID) is an extremely serious photovoltaic (PV) durability issue significantly observed in crystalline silicon PV modules due to its rapid power degradation, particularly when compared to other PV degradation modes. The focus of this dissertation is to understand PID mechanisms and to develop PID-free cells and modules. PID-affected modules have been claimed to be fully recovered by high temperature and reverse potential treatments. However, the results obtained in this work indicate that the near-full recovery of efficiency can be achieved only at high irradiance conditions, but the full recovery of efficiency at low irradiance levels, of shunt resistance, and of quantum efficiency (QE) at short wavelengths could not be achieved. The QE loss observed at short wavelengths was modeled by changing the front surface recombination velocity. The QE scaling error due to a measurement on a PID shunted cell was addressed by developing a very low input impedance accessory applicable to an existing QE system. The impacts of silicon nitride (SiNx) anti-reflection coating (ARC) refractive index (RI) and emitter sheet resistance on PID are presented. Low RI ARC cells (1.87) were observed to be PID-susceptible whereas high RI ARC cells (2.05) were determined to be PID-resistant using a method employing high dose corona charging followed by time-resolved measurement of surface voltage. It has been demonstrated that the PID could be prevented by deploying an emitter having a low sheet resistance (~ 60 /sq) even if a PID-susceptible ARC is used in a cell. Secondary ion mass spectroscopy (SIMS) results suggest that a high phosphorous emitter layer hinders sodium transport, which is responsible for the PID. Cells can be screened for PID susceptibility by illuminated lock-in thermography (ILIT) during the cell fabrication process, and the sample structure for this can advantageously be simplified as long as the sample has the SiNx ARC and an aluminum back surface field. Finally, this dissertation presents a prospective method for eliminating or minimizing the PID issue either in the factory during manufacturing or in the field after system installation. The method uses commercially available, thin, and flexible Corning® Willow® Glass sheets or strips on the PV module glass superstrates, disrupting the current leakage path from the cells to the grounded frame.
ContributorsOh, Jaewon (Author) / Bowden, Stuart (Thesis advisor) / Tamizhmani, Govindasamy (Thesis advisor) / Honsberg, Christiana (Committee member) / Hacke, Peter (Committee member) / Schroder, Dieter (Committee member) / Arizona State University (Publisher)
Created2016