Matching Items (20)
Description
As crystalline silicon solar cells continue to get thinner, the recombination of carriers at the surfaces of the cell plays an ever-important role in controlling the cell efficiency. One tool to minimize surface recombination is field effect passivation from the charges present in the thin films applied on the cell surfaces. The focus of this work is to understand the properties of charges present in the SiNx films and then to develop a mechanism to manipulate the polarity of charges to either negative or positive based on the end-application. Specific silicon-nitrogen dangling bonds (·Si-N), known as K center defects, are the primary charge trapping defects present in the SiNx films. A custom built corona charging tool was used to externally inject positive or negative charges in the SiNx film. Detailed Capacitance-Voltage (C-V) measurements taken on corona charged SiNx samples confirmed the presence of a net positive or negative charge density, as high as +/- 8 x 1012 cm-2, present in the SiNx film. High-energy (~ 4.9 eV) UV radiation was used to control and neutralize the charges in the SiNx films. Electron-Spin-Resonance (ESR) technique was used to detect and quantify the density of neutral K0 defects that are paramagnetically active. The density of the neutral K0 defects increased after UV treatment and decreased after high temperature annealing and charging treatments. Etch-back C-V measurements on SiNx films showed that the K centers are spread throughout the bulk of the SiNx film and not just near the SiNx-Si interface. It was also shown that the negative injected charges in the SiNx film were stable and present even after 1 year under indoor room-temperature conditions. Lastly, a stack of SiO2/SiNx dielectric layers applicable to standard commercial solar cells was developed using a low temperature (< 400 °C) PECVD process. Excellent surface passivation on FZ and CZ Si substrates for both n- and p-type samples was achieved by manipulating and controlling the charge in SiNx films.
ContributorsSharma, Vivek (Author) / Bowden, Stuart (Thesis advisor) / Schroder, Dieter (Committee member) / Honsberg, Christiana (Committee member) / Roedel, Ronald (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2013
Description
The object of this study was a 26 year old residential Photovoltaic (PV) monocrystalline silicon (c-Si) power plant, called Solar One, built by developer John F. Long in Phoenix, Arizona (a hot-dry field condition). The task for Arizona State University Photovoltaic Reliability Laboratory (ASU-PRL) graduate students was to evaluate the power plant through visual inspection, electrical performance, and infrared thermography. The purpose of this evaluation was to measure and understand the extent of degradation to the system along with the identification of the failure modes in this hot-dry climatic condition. This 4000 module bipolar system was originally installed with a 200 kW DC output of PV array (17 degree fixed tilt) and an AC output of 175 kVA. The system was shown to degrade approximately at a rate of 2.3% per year with no apparent potential induced degradation (PID) effect. The power plant is made of two arrays, the north array and the south array. Due to a limited time frame to execute this large project, this work was performed by two masters students (Jonathan Belmont and Kolapo Olakonu) and the test results are presented in two masters theses. This thesis presents the results obtained on the north array and the other thesis presents the results obtained on the south array. The resulting study showed that PV module design, array configuration, vandalism, installation methods and Arizona environmental conditions have had an effect on this system's longevity and reliability. Ultimately, encapsulation browning, higher series resistance (potentially due to solder bond fatigue) and non-cell interconnect ribbon breakages outside the modules were determined to be the primary causes for the power loss.
ContributorsBelmont, Jonathan (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Henderson, Mark (Committee member) / Rogers, Bradley (Committee member) / Arizona State University (Publisher)
Created2013
Description
Silicon solar cells with heterojunction carrier collectors based on a-Si/c-Si heterojunction (SHJ) have a potential to overcome the limitations of the conventional diffused junction solar cells and become the next industry standard manufacturing technology of solar cells. A brand feature of SHJ technology is ultrapassivated surfaces with already demonstrated 750 mV open circuit voltages (Voc) and 24.7% efficiency on large area solar cell. Despite very good results achieved in research and development, large volume manufacturing of high efficiency SHJ cells remains a fundamental challenge. The main objectives of this work were to develop a SHJ solar cell fabrication flow using industry compatible tools and processes in a pilot production environment, study the interactions between the used fabrication steps, identify the minimum set of optimization parameters and characterization techniques needed to achieve 20% baseline efficiency, and analyze the losses of power in fabricated SHJ cells by numerical and analytical modeling. This manuscript presents a detailed description of a SHJ solar cell fabrication flow developed at ASU Solar Power Laboratory (SPL) which allows large area solar cells with >750 mV Voc. SHJ cells on 135 um thick 153 cm2 area wafers with 19.5% efficiency were fabricated. Passivation quality of (i)a-Si:H film, bulk conductivity of doped a-Si films, bulk conductivity of ITO, transmission of ITO and the thickness of all films were identified as the minimum set of optimization parameters necessary to set up a baseline high efficiency SHJ fabrication flow. The preparation of randomly textured wafers to minimize the concentration of surface impurities and to avoid epitaxial growth of a-Si films was found to be a key challenge in achieving a repeatable and uniform passivation. This work resolved this issue by using a multi-step cleaning process based on sequential oxidation in nitric/acetic acids, Piranha and RCA-b solutions. The developed process allowed state of the art surface passivation with perfect repeatability and negligible reflectance losses. Two additional studies demonstrated 750 mV local Voc on 50 micron thick SHJ solar cell and < 1 cm/s effective surface recombination velocity on n-type wafers passivated by a-Si/SiO2/SiNx stack.
ContributorsHerasimenka, Stanislau Yur'yevich (Author) / Honsberg, C. (Christiana B.) (Thesis advisor) / Bowden, Stuart G (Thesis advisor) / Tracy, Clarence (Committee member) / Vasileska, Dragica (Committee member) / Holman, Zachary (Committee member) / Sinton, Ron (Committee member) / Arizona State University (Publisher)
Created2013
Description
In the interest of expediting future pilot line start-ups for solar cell research, the development of Arizona State University's student-led pilot line at the Solar Power Laboratory is discussed extensively within this work. Several experiments and characterization techniques used to formulate and optimize a series of processes for fabricating diffused-junction, screen-printed silicon solar cells are expounded upon. An experiment is conducted in which the thickness of a PECVD deposited anti-reflection coating (ARC) is varied across several samples and modeled as a function of deposition time. Using this statistical model in tandem with reflectance measurements for each sample, the ARC thickness is optimized to increase light trapping in the solar cells. A response surface model (RSM) experiment is conducted in which 3 process parameters are varied on the PECVD tool for the deposition of the ARCs on several samples. A contactless photoconductance decay (PCD) tool is used to measure the dark saturation currents of these samples. A statistical analysis is performed using JMP in which optimum deposition parameters are found. A separate experiment shows an increase in the passivation quality of the a-SiNx:H ARCs deposited on the solar cells made on the line using these optimum parameters. A RSM experiment is used to optimize the printing process for a particular silver paste in a similar fashion, the results of which are confirmed by analyzing the series resistance of subsequent cells fabricated on the line. An in-depth explanation of a more advanced analysis using JMP and PCD measurements on the passivation quality of 3 aluminum back-surface fields (BSF) is given. From this experiment, a comparison of the means is conducted in order to choose the most effective BSF paste for cells fabricated on the line. An experiment is conducted in parallel which confirms the results via Voc measurements. It is shown that in a period of 11 months, the pilot line went from producing a top cell efficiency of 11.5% to 17.6%. Many of these methods used for the development of this pilot line are equally applicable to other cell structures, and can easily be applied to other solar cell pilot lines.
ContributorsPickett, Guy (Author) / Bowden, Stuart (Thesis advisor) / Honsberg, Christiana (Committee member) / Bertoni, Mariana (Committee member) / Arizona State University (Publisher)
Created2014
Description
Silicon (Si) solar cells are the dominant technology used in the Photovoltaics industry. Field-effect passivation by means of electrostatic charges stored in an overlying insulator on a silicon solar cell has been proven to be a significantly efficient way to reduce effective surface recombination velocity and increase minority carrier lifetime. Silicon nitride (SiNx) films have been extensively used as passivation layers. The capability to store charges makes SiNx a promising material for excellent feild effect passivation. In this work, symmetrical Si/SiO2/SiNx stacks are developed to study the effect of charges in SiNx films. SiO2 films work as barrier layers. Corona charging technique showed the ability to inject charges into the SiNx films in a short time. Minority carrier lifetimes of the Czochralski (CZ) Si wafers increased significantly after either positive or negative charging. A fast and contactless method to characterize the charged overlying insulators on Si wafer through lifetime measurements is proposed and studied in this work, to overcome the drawbacks of capacitance-voltage (CV) measurements such as time consuming, induction of contanmination and hysteresis effect, etc. Analytical simulations showed behaviors of inverse lifetime (Auger corrected) vs. minority carrier density curves depend on insulator charge densities (Nf). From the curve behavior, the Si surface condition and region of Nf can be estimated. When the silicon surface is at high strong inversion or high accumulation, insulator charge density (Nf) or surface recombination velocity parameters (Sn0 and Sp0) can be determined from the slope of inverse lifetime curves, if the other variable is known. If Sn0 and Sp0 are unknown, Nf values of different samples can be compared as long as all have similar Sn0 and Sp0 values. Using the saturation current density (J0) and intercept fit extracted from the lifetime measurement, the bulk lifetime can be calculated. Therefore, this method is feasible and promising for charged insulator characterization.
ContributorsYang, Qun (Author) / Bowden, Stuart (Thesis advisor) / Honsberg, Christiana (Committee member) / Tracy, Clarence (Committee member) / Arizona State University (Publisher)
Created2014
Description
Crystalline silicon has a relatively low absorption coefficient, and therefore, in thin silicon solar cells surface texturization plays a vital role in enhancing light absorption. Texturization is needed to increase the path length of light through the active absorbing layer. The most popular choice for surface texturization of crystalline silicon is the anisotropic wet-etching that yields pyramid-like structures. These structures have shown to be both simple to fabricate and efficient in increasing the path length; they outperform most competing surface texture. Recent studies have also shown these pyramid-like structures are not truly square-based 54.7 degree pyramids but have variable base angles and shapes. In addition, their distribution is not regular -- as is often assumed in optical models -- but random. For accurate prediction of performance of silicon solar cells, it is important to investigate the true nature of the surface texture that is achieved using anisotropic wet-etching, and its impact on light trapping. We have used atomic force microscopy (AFM) to characterize the surface topology by obtaining actual height maps that serve as input to ray tracing software. The height map also yields the base angle distribution, which is compared to the base angle distribution obtained by analyzing the angular reflectance distribution measured by spectrophotometer to validate the shape of the structures. Further validation of the measured AFM maps is done by performing pyramid density comparison with SEM micrograph of the texture. Last method employed for validation is Focused Ion Beam (FIB) that is used to mill the long section of pyramids to reveal their profile and so from that the base angle distribution is measured. After that the measured map is modified and the maps are generated keeping the positional randomness (the positions of pyramids) and height of the pyramids the same, but changing their base angles. In the end a ray tracing software is used to compare the actual measured AFM map and also the modified maps using their reflectance, transmittance, angular scattering and most importantly path length enhancement, absorbance and short circuit current with lambertian scatterer.
ContributorsManzoor, Salman (Author) / Holman, Zachary (Thesis advisor) / Goodnick, Stephen (Committee member) / Bowden, Stuart (Committee member) / Arizona State University (Publisher)
Created2014
Description
In this thesis, a novel silica nanosphere (SNS) lithography technique has been developed to offer a fast, cost-effective, and large area applicable nano-lithography approach. The SNS can be easily deposited with a simple spin-coating process after introducing a N,N-dimethyl-formamide (DMF) solvent which can produce a highly close packed SNS monolayer over large silicon (Si) surface area, since DMF offers greatly improved wetting, capillary and convective forces in addition to slow solvent evaporation rate. Since the period and dimension of the surface pattern can be conveniently changed and controlled by introducing a desired size of SNS, and additional SNS size reduction with dry etching process, using SNS for lithography provides a highly effective nano-lithography approach for periodically arrayed nano-/micro-scale surface patterns with a desired dimension and period. Various Si nanostructures (i.e., nanopillar, nanotip, inverted pyramid, nanohole) are successfully fabricated with the SNS nano-lithography technique by using different etching technique like anisotropic alkaline solution (i.e., KOH) etching, reactive-ion etching (RIE), and metal-assisted chemical etching (MaCE).
In this research, computational optical modeling is also introduced to design the Si nanostructure, specifically nanopillars (NPs) with a desired period and dimension. The optical properties of Si NP are calculated with two different optical modeling techniques, which are the rigorous coupled wave analysis (RCWA) and finite-difference time-domain (FDTD) methods. By using these two different optical modeling techniques, the optical properties of Si NPs with different periods and dimensions have been investigated to design ideal Si NP which can be potentially used for thin c-Si solar cell applications. From the results of the computational and experimental work, it was observed that low aspect ratio Si NPs fabricated in a periodic hexagonal array can provide highly enhanced light absorption for the target spectral range (600 ~ 1100nm), which is attributed to (1) the effective confinement of resonant scattering within the Si NP and (2) increased high order diffraction of transmitted light providing an extended absorption length. From the research, therefore, it is successfully demonstrated that the nano-fabrication process with SNS lithography can offer enhanced lithographical accuracy to fabricate desired Si nanostructures which can realize enhanced light absorption for thin Si solar cell.
In this research, computational optical modeling is also introduced to design the Si nanostructure, specifically nanopillars (NPs) with a desired period and dimension. The optical properties of Si NP are calculated with two different optical modeling techniques, which are the rigorous coupled wave analysis (RCWA) and finite-difference time-domain (FDTD) methods. By using these two different optical modeling techniques, the optical properties of Si NPs with different periods and dimensions have been investigated to design ideal Si NP which can be potentially used for thin c-Si solar cell applications. From the results of the computational and experimental work, it was observed that low aspect ratio Si NPs fabricated in a periodic hexagonal array can provide highly enhanced light absorption for the target spectral range (600 ~ 1100nm), which is attributed to (1) the effective confinement of resonant scattering within the Si NP and (2) increased high order diffraction of transmitted light providing an extended absorption length. From the research, therefore, it is successfully demonstrated that the nano-fabrication process with SNS lithography can offer enhanced lithographical accuracy to fabricate desired Si nanostructures which can realize enhanced light absorption for thin Si solar cell.
ContributorsChoi, JeaYoung (Author) / Honsberg, Christiana (Thesis advisor) / Alford, Terry (Thesis advisor) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2015
Description
This dissertation presents my work on development of deformable electronics using microelectromechanical systems (MEMS) based fabrication technologies. In recent years, deformable electronics are coming to revolutionize the functionality of microelectronics seamlessly with their application environment, ranging from various consumer electronics to bio-medical applications. Many researchers have studied this area, and a wide variety of devices have been fabricated. One traditional way is to directly fabricate electronic devices on flexible substrate through low-temperature processes. These devices suffered from constrained functionality due to the temperature limit. Another transfer printing approach has been developed recently. The general idea is to fabricate functional devices on hard and planar substrates using standard processes then transferred by elastomeric stamps and printed on desired flexible and stretchable substrates. The main disadvantages are that the transfer printing step may limit the yield. The third method is "flexible skins" which silicon substrates are thinned down and structured into islands and sandwiched by two layers of polymer. The main advantage of this method is post CMOS compatible. Based on this technology, we successfully fabricated a 3-D flexible thermal sensor for intravascular flow monitoring. The final product of the 3-D sensor has three independent sensing elements equally distributed around the wall of catheter (1.2 mm in diameter) with 120° spacing. This structure introduces three independent information channels, and cross-comparisons among all readings were utilized to eliminate experimental error and provide better measurement results. The novel fabrication and assembly technology can also be applied to other catheter based biomedical devices. A step forward inspired by the ancient art of folding, origami, which creating three-dimensional (3-D) structures from two-dimensional (2-D) sheets through a high degree of folding along the creases. Based on this idea, we developed a novel method to enable better deformability. One example is origami-enabled silicon solar cells. The solar panel can reach up to 644% areal compactness while maintain reasonable good performance (less than 30% output power density drop) upon 40 times cyclic folding/unfolding. This approach can be readily applied to other functional devices, ranging from sensors, displays, antenna, to energy storage devices.
ContributorsTang, Rui (Author) / Yu, Hongyu (Thesis advisor) / Jiang, Hanqing (Committee member) / Pan, George (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2014
Description
Hydrogen sulfide (H2S) has been identified as a potential ingredient for grain boundary passivation of multicrystalline silicon. Sulfur is already established as a good surface passivation material for crystalline silicon (c-Si). Sulfur can be used both from solution and hydrogen sulfide gas. For multicrystalline silicon (mc-Si) solar cells, increasing efficiency is a major challenge because passivation of mc-Si wafers is more difficult due to its randomly orientated crystal grains and the principal source of recombination is contributed by the defects in the bulk of the wafer and surface.
In this work, a new technique for grain boundary passivation for multicrystalline silicon using hydrogen sulfide has been developed which is accompanied by a compatible Aluminum oxide (Al2O3) surface passivation. Minority carrier lifetime measurement of the passivated samples has been performed and the analysis shows that success has been achieved in terms of passivation and compared to already existing hydrogen passivation, hydrogen sulfide passivation is actually better. Also the surface passivation by Al2O3 helps to increase the lifetime even more after post-annealing and this helps to attain stability for the bulk passivated samples. Minority carrier lifetime is directly related to the internal quantum efficiency of solar cells. Incorporation of this technique in making mc-Si solar cells is supposed to result in higher efficiency cells. Additional research is required in this field for the use of this technique in commercial solar cells.
In this work, a new technique for grain boundary passivation for multicrystalline silicon using hydrogen sulfide has been developed which is accompanied by a compatible Aluminum oxide (Al2O3) surface passivation. Minority carrier lifetime measurement of the passivated samples has been performed and the analysis shows that success has been achieved in terms of passivation and compared to already existing hydrogen passivation, hydrogen sulfide passivation is actually better. Also the surface passivation by Al2O3 helps to increase the lifetime even more after post-annealing and this helps to attain stability for the bulk passivated samples. Minority carrier lifetime is directly related to the internal quantum efficiency of solar cells. Incorporation of this technique in making mc-Si solar cells is supposed to result in higher efficiency cells. Additional research is required in this field for the use of this technique in commercial solar cells.
ContributorsSaha, Arunodoy, Ph.D (Author) / Tao, Meng (Thesis advisor) / Vasileska, Dragica (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2014
Description
A major obstacle to sustainable solar technologies is end-of-life solar modules. In this thesis, a recycling process is proposed for crystalline-Si solar modules. It is a three-step process to break down Si modules and recover various materials. Over 95% of a module by weight can be recovered with this process. Two new technologies are demonstrated to enable the proposed recycling process. One is sequential electrowinning which allows multiple metals to be recovered one by one from Si modules, Ag, Pb, Sn and Cu. The other is sheet resistance monitoring by the 4-point probe which maximizes the amount of solar-grade Si recovered from Si modules with high throughput. The purity of the recovered metals is above 99% and the recovery rate can achieve between 70~80%. The recovered Si meets the specifications for solar-grade Si and at least 91% of Si from c-Si solar cells can be recovered. The recovered Si and metals are new feedstocks to the solar industry and generate over $12/module in revenue. This revenue enables a profitable recycling business for Si modules without any government support. The chemicals for recycling are carefully selected to minimize their environmental impact and also the cost. A network for collecting end-of-life solar modules is proposed based on the current distribution network for solar modules to contain the collection cost. As a result, the proposed recycling process for c-Si modules is technically, environmentally and financially sustainable.
ContributorsHuang, Wenxi (Author) / Tao, Meng (Thesis advisor) / Alford, Terry (Committee member) / Sinha, Parikhit (Committee member) / Arizona State University (Publisher)
Created2018