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Ge1-ySny alloys represent a new class of photonic materials for integrated optoelectronics on Si. In this work, the electrical and optical properties of Ge1-ySny alloy films grown on Si, with concentrations in the range 0 ≤ y ≤ 0.04, are studied via a variety of methods. The first microelectronic devices

Ge1-ySny alloys represent a new class of photonic materials for integrated optoelectronics on Si. In this work, the electrical and optical properties of Ge1-ySny alloy films grown on Si, with concentrations in the range 0 ≤ y ≤ 0.04, are studied via a variety of methods. The first microelectronic devices from GeSn films were fabricated using newly developed CMOS-compatible protocols, and the devices were characterized with respect to their electrical properties and optical response. The detectors were found to have a detection range that extends into the near-IR, and the detection edge is found to shift to longer wavelengths with increasing Sn content, mainly due to the compositional dependence of the direct band gap E0. With only 2 % Sn, all of the telecommunication bands are covered by a single detector. Room temperature photoluminescence was observed from GeSn films with Sn content up to 4 %. The peak wavelength of the emission was found to shift to lower energies with increasing Sn content, corresponding to the decrease in the direct band gap E0 of the material. An additional peak in the spectrum was assigned to the indirect band gap. The separation between the direct and indirect peaks was found to decrease with increasing Sn concentration, as expected. Electroluminescence was also observed from Ge/Si and Ge0.98Sn0.02 photodiodes under forward bias, and the luminescence spectra were found to match well with the observed photoluminescence spectra. A theoretical expression was developed for the luminescence due to the direct band gap and fit to the data.
ContributorsMathews, Jay (Author) / Menéndez, Jose (Thesis advisor) / Kouvetakis, John (Thesis advisor) / Drucker, Jeffery (Committee member) / Chizmeshya, Andrew (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2011
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Description
The study of subwavelength behavior of light and nanoscale lasing has broad

potential applications in various forms of computation i.e. optical and quantum, as well as

in energy engineering. Although this field has been under active research, there has been

little work done on describing the behaviors of threshold and

The study of subwavelength behavior of light and nanoscale lasing has broad

potential applications in various forms of computation i.e. optical and quantum, as well as

in energy engineering. Although this field has been under active research, there has been

little work done on describing the behaviors of threshold and saturation. Particularly, how

the gain-molecule behavior affects the lasing behavior has yet to be investigated.

In this work, the interaction of surface-plasmon-polaritons (SPPs) and molecules is

observed in lasing. Various phenomenologies are observed related to the appearance of the

threshold and saturation regions. The lasing profile, as a visual delimiter of lasing threshold

and saturation, is introduced and used to study various parametrical dependencies of lasing,

including the number-density of molecules, the molecular thickness and the frequency

detuning between the molecular transition frequency and the SPP resonant frequency. The

molecular population distributions are studied in terminal and dynamical methods and are

found to contain unexpected and theoretically challenging properties. Using an average

dynamical analysis, the simulated spontaneous emission cascade can be clearly seen.

Finally, theoretical derivations of simple 1D strands of dipoles are presented in both

the exact and mean-field approximation, within the density matrix formalism. Some

preliminary findings are presented, detailing the observed behaviors of some simple

systems.
ContributorsBrewer, Andre J (Author) / Sukharev, Maxim (Thesis advisor) / Rivera, Daniel E (Thesis advisor) / Menéndez, Jose (Committee member) / Arizona State University (Publisher)
Created2017